• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• 해양환경안전학회지
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• 제22권2호
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• pp.253-258
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• 2016

선박 및 해양구조물에서의 생물학적 오손을 방지하기 위하여 나노크기의 $MnO_x-WO_3-TiO_2$ 분말을 졸겔법으로 합성하여 특성을 제어하였고, 입자의 결정과 미세구조 등 분체특성 평가를 실시하였다. 자기마모형 방오도료의 안료에 적용하기 위하여 수지에 첨가된 $TiO_2$계 나노분말 안료의 함량에 따른 표면특성 및 방오성능을 확인하였다. $TiO_2$계 안료의 분체특성으로 비표면적은 약 $90m^2/g$, 입자크기는 약 100 ~ 150 nm을 보였다. 텅스텐 산화물은 망간산화물과 티타늄산화물과 상관관계를 통해, 삼원계 분체가 분체특성 및 표면특성이 우수하였다. 망간산화물의 첨가는 독특한 산화환원 특성으로 인하여 방오성능을 증가시키고, 텅스텐 산화물은 안료의 분체특성을 향상시킴으로, 안료와 수지의 비율을 조절하여 분산성, 표면특성 및 방오성능을 제어하였다. 그 결과로, 분산성 및 표면특성에 있어서 1, 5 wt. % 안료가 첨가된 것이 일부 우수하였으나, 5개월 동안의 해상침지시험에서는 2 wt. % 함유된 시편이 높은 방오성능을 보여 해양구조물의 방오안료 적용가능성을 확인하였다.

• 한국재료학회지
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• 제18권4호
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• pp.193-198
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• 2008

$WO_3$-doped $SnO_2$ thin films were prepared in a solution-deposition method and their gas-sensing characteristics were investigated. The doping of $WO_3$ to $SnO_2$ increased the response ($R_a/R_g,\;R_a$: resistance in air, $R_g$: resistance in gas) to $H_2$ substantially. Moreover, the $R_a/R_g$ value of 10 ppm CO increased to 5.65, whereas that of $NO_2$ did not change by a significant amount. The enhanced response to $H_2$ and the selective detection of CO in the presence of $NO_2$ were explained in relation to the change in the surface reaction by the addition of $WO_3$. The $WO_3$-doped $SnO_2$ sensor can be used with the application of a $H_2$ sensor for vehicles that utilize fuel cells and as an air quality sensor to detect CO-containing exhaust gases emitted from gasoline engines.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.56-56
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• 2009

In this study, we fabricated the engineered $SiO_2/Si_3N_4/SiO_2$(ONO) tunnel barrier with high-k $HfO_2$ trapping layer for application high performance flash MLC(Multi Level Cell). As a result, memory device show low operation voltage and stable memory characteristics with large memory window. Therefore, the engineered tunnel barrier with ONO stacks were useful structure would be effective method for high-integrated MLC memory applications.

• 한국전기전자재료학회논문지
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• 제29권5호
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• pp.294-297
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• 2016

Titanium oxide ($TiO_2$) thin films were fabricated by unbalanced magnetron (UBM) sputtering. The fabricated $TiO_2$ films were treated by oxygen plasma under various RF powers. We investigated the characteristics of oxygen plasma treatment on the surface, structural, and physical properties of $TiO_2$ films prepared at various plasma treatment RF powers. UBM sputtered $TiO_2$ films exhibited higher contact angle value, smooth surface, and amorphous structure. However, the rms surface roughness $TiO_2$ films were rough, and the contact angle value was decreased with the increase of the plasma treatment RF power Also, the hardness value of $TiO_2$ film as physical properties was slightly increased with the increase of the plasma treatment RF power. In the results, the performance of $TiO_2$ films for self cleaning critically depended on the with the plasma treatment RF power.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.241-244
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• 2014

Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.

• 한국전기전자재료학회논문지
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• 제20권9호
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• pp.771-775
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• 2007

In this study, in order to develop low temperature sintering ceramics for thickness vibration mode multilayer piezoelectric transformer, $PbTiO_3$ system ceramics were fabricated using $Na_2CO_3,\;Li_2CO_3,\;MnO_2\;and\;Bi_2O_3$ as sintering aids and their dielectric and piezoeletric properties were investigated according to the amount of $Bi_2O_3$ addition. At the sintering temperature of $900^{\circ}C\;and\;Bi_2O_3$ addition of 0.1 wt%, density, grain size, thickness vibration mode eletromechanical coupling factor($k_t$), thickness vibration mode mechanical quality factor($Q_{mt}$) and dielecteic constant(${\varepsilon}_r$) showed the optimum value of $6.94g/cm^3,\;2.413{\mu}m$, 0.497, 3,162 and 209, respectively, for thickness vibration mode multilayer piezoelectric transformer application.

• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2546-2552
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• 2012

A novel biguanide-functionalized $Fe_3O_4/SiO_2$ magnetite nanoparticle with a core-shell structure was developed for utilization as a heterogeneous organosuperbase in chemical transformations. The structural, surface, and magnetic characteristics of the nanosized catalyst were investigated by various techniques such as transmission electron microscopy (TEM), powder X-ray diffraction (XRD), vibrating sample magnetometry (VSM), elemental analyzer (EA), thermogravimetric analysis (TGA), $N_2$ adsorption-desorption (BET and BJH) and FT-IR. The biguanide-functionalized $Fe_3O_4/SiO_2$ nanoparticles showed a superpara-magnetic property with a saturation magnetization value of 46.7 emu/g, indicating great potential for application in magnetically separation technologies. In application point of view, the prepared catalyst was found to act as an efficient recoverable nanocatalyst in nitroaldol and domino Knoevenagel condensation/Michael addition/cyclization reactions in aqueous media under mild condition. Additionally, the catalyst was reused six times without significant degradation in catalytic activity and performance.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.223-226
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• 2004

MgO thin films were deposited bye-beam evaporation on $SiO_2$/Si wafers for the application of a protective layer in alternating current plasma display panels (AC-PDPs). Three different MgO sources, single crystal, melted polycrystal and sintered polycrystal, were used to find out the change of the properties of MgO protective layer depending on the source type. The properties of MgO thin films such as density, orientation and surface morphology were influenced by the source type. MgO thin films deposited with the melted polycrystal source had the highest density with the highest (100) preferred orientation, whereas the films deposited with the sintered polycrystal source had the lowest density with less preferred orientation. Such a result seems to be originated from the different mobility of adatoms on the surface of the deposited MgO thin films. Different microstructures of MgO thin films deposited even in the same deposition condition were observed depending on the MgO source type, resulting in different discharge characteristics.

• 한국결정성장학회지
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• 제8권1호
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• pp.10-17
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• 1998

Lithium Niobate($LiNbO_3$) 단결정 소재의 광손상에 대한 저항성을 향상시키는 첨가이온으로 잘 알려져 있는 $Mg^{2+}$ 및 $Zn^{2+}$ 이온을 첨가하여 육성한 단결정들의 특성을 비교 분석하였다. 특히 고강도 laser 광의 조사시에 더욱 우수한 특성을 보이는 것으로 알려진 $Zn^{2+}$이온의 첨가량에 따른 광학적 특성 및 전기적 특성의 변화를 측정하여 광손상 저항성을 평가하였으며, 고강도 laser 기기에의 응용 가능성을 고찰하였다.