• Journal of Sensor Science and Technology
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• v.10 no.4
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• pp.222-231
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• 2001

The material properties of $SnO_2$ were investigated as a function of the amount of $Fe_2O_3$, the partial pressure of oxygen, the concentration of CO gas, and temperature. $Fe_2O_3$-doped $SnO_2$ thick films were prepared by the screen printing technique on alumina substrate. The specimens sintered at $700^{\circ}C$ for 6 hours showed little difference of the grain size and narrow distribution with the content of $Fe_2O_3$. The electrical conductance of undoped $SnO_2$ is high at low firing temperature and at low partial pressure of oxygen. The electrical conductance of $Fe_2O_3-$-doped $SnO_2$ is increased with measurement temperature, but decreased with the content of $Fe_2O_3$. The dependence of oxygen partial pressure is decreased with dopant addition. The highest sensitivity and the good properties of response speed and repeatability for CO gas were observed on the specimen with 0.1 mol% $Fe_2O_3$ at $350^{\circ}C$.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.6
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• pp.61-69
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• 2000

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.

• Journal of Electrical Engineering and Technology
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• v.6 no.4
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• pp.539-542
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• 2011

Thin-film transistors (TFTs) are fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel layer by rf-magnetron sputtering. Oxygen partial pressure significantly changed the transfer characteristics of a-IGZO TFTs. Measurements performed on a-IGZO TFT show the change of threshold voltage in the transistor channel layer and electrical properties with varying $O_2$ ratios. The device performance is significantly affected by adjusting the $O_2$ ratio. This ratio is closely related with the modulation generation by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.222-232
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• 2000

The relationship between carrier electron concentration(n) and atmosphere oxygen partial pressure($P_{O_2}$ for pure ZnO calculated by the mass-action law, well-known as n ${\propto}P^{-1/m}_{O_2}$ where m = 4 or 6 for the single or the double ionization of the native donor defects due to its nonstoichiometry, respectively, is found in competition with the calculation result on the basis that the total defect concentration is the sum of those of unionized and ionized defects. Definitively, it is found inconsistent with the calculation result by employing the Fermi-Dirac(FD) statistics for their ionization processes. By application of the FD statistics law to the ionization while assuming the defect formation is still ruled by the mass-action law, the calculation results shows the concentration is proportional to $P^{-1/2}_{O_2}$ whenever they ionize singly and/or doubly. Conclusively we would like to propose the new theoretical relation n ${\propto}P^{-1/m}_{O_2}$ because the ionization processes of donors in ZnO should be treated with the electronoccupation probability at localized quantum states in its forbidden band created by the donor defects, i.e. the FD statistics

• Journal of Hydrogen and New Energy
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• v.13 no.2
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• pp.119-126
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• 2002

The methanol partial oxidation using commercial $CuO/ZnO/Al_2O_3$ catalysts in a plug flow reactor was studied in the temperature range of $200{\sim}250^{\circ}C$ at atmospheric pressure, It was achieved the high activities by Cu-based catalysts and the selectivity of $CO_2$/$H_2$ was 100% when $O_2$ was fully convened. The reactivity changes and their hysteresis with increasing/decreasing temperatures were observed due to the chemical state differences between the oxidation and the reduction on the Cu surface, It was suggested as the two-step reaction: the complete oxidation and the following steam reforming for methanol, which was indicated by the distributions of final products vs. the residence time. In addition, the complete oxidation step was shown to be extremely fast and the total reaction rate can be controlled by the steam reforming reaction.

• Bulletin of the Korean Chemical Society
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• v.13 no.3
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• pp.248-252
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• 1992

$ZrO_2-dopedYb_2O_3solid$ solutions containing 1, 3, 5, 7 and 9 mol% $ZrO_2were$ synthesized from spectroscopically pure $Yb_2O_3$ and $ZrO_2$ powders and found to be rare earth C-type structure by XRD technique. Electrical conductivities were measured as a function of temperatures from 700 to $1050^{\circ}C$ and oxygen partial pressures from 1${\times}$$10^-5$ to 2${\times}$ $10^-1$atm. The electrical conductivities depend simply on temperature and the activation energies are determined to be 1.56-1.68 $_eV$. The oxygen partial pressure dependence of the electrical conductivity shows that the conductivity increases with increasing oxygen partial pressure, indicating p-type semiconductor. The $PO_2$ dependence of the system is nearly power of 1/4. It is suggested from the linearity of the temperature dependence of electrical conductivity and only one value of 1/n that the solid solutions of the system have single conduction mechanism. From these results, it is concluded that the main defects of the system are negatively doubly charged oxygen interstitial in low. $ZrO_2doping$ level and negatively triply charged cation vacancy in high doping level and the electrical conduction is due to the electronic hole formed by the defect structure.

• Transactions of Materials Processing
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• v.28 no.1
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• pp.43-48
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• 2019

Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

• The Journal of Korean Academy of Prosthodontics
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• v.21 no.1
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• pp.59-66
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• 1983

Distal extension partial dentures are supported by both the relatively rigid teeth and the resilient mucosa. So impression techniques of residual alveolar ridge in case of distal extension partial denture have particular importance in order to broad distribution of the masticatory force. McLean recognized the need for recording the tissues supporting distal extension partial denture base in functional form to equalize the resilient and non-resilient support, and this was called functional impression. Many investigators proposed various techniques of the functional impression for a distal extension partial denture, but only a little studies were performed about displacement of soft tissue under distal extension partial denture base. The purpose of this study is to investigate the amount of vertical displacement of the soft tissue under distal extension partial denture base by different functional impression techniques. Impression techniques used were Z.O.P. Impression, Selective Tissue Placement Impression, Functional Relining Impression. Measurement of the vertical displacement of soft tissue were made with Depth Gauge and Measuring Platform. A Anatomic Impression was used as a control. The results were tested statistically using 3 way ANOVA and Scheffe test. The followings were the results obtained from this study. 1. The greatest amount of soft tissue displacement was observed in the center of the retromolar pad. 2. No significant differences were found between the crest of alveolar ridge and the buccal shelf area. 3. The greatest soft tissue displacement was observed in Functional Relining Impression using Iowa wax, and the least displacement was observed in Selective Tissue Placement Impression using murcaptan rubber base. 4. No significant differences were found between finger pressure and biting pressure in Z.O.P. Impression, but greater displacement was observed by biting pressure than finger pressure in Functional Reling Impression.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.686-692
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• 2000

Tin-doped In2O3 (ITO) films were fabricated using a d.c. magnetron reactive sputteirng of a In-10 wt% Sn alloy target in an Ar and O2 gas mixture. To understand the behavior of the carrier mobility in ITO films with O2 partial pressure, the resistivity, carrier concentration and mobility, film density, and intrinsic stress in the films were measured with O2 partial pressure. It was found experimentally that the carrier mobility increased rapidly as the film density increased. In the ITO film with the density close to theoretical one, the mean free path was the same as the columnar diameter. This indicated that the mobility in ITO films was strongly influenced by the crystall size. However, in the case where the film density was smaller than a theoretical density, the mean free paths were also smaller the columnar diameter. It was analyzed that the electron scattering at pores and holes within the crystalline was the major obstacle for electron conduction in ITO films. The measurement of intrinsic stress in ITO films also made it clear that the density of ITO films was controlled by the bombardment of oxygen neutrals on the growing film.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.14 no.3
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• pp.679-688
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• 1994

Physicochemical and morphological characteristics of biopellets produced in "control" and modified UASB reactor were investigated to compare the reactor performance with regard to the hydrogen partial pressure. The characteristics of biopellet produced in modified UASB reactor operated with high hydrogen partial pressure were better than those of "control" reactor operated with relatively lower hydrogen partial pressure, therefore the hydrogen partial pressure effected greatly on the formation and stability of the biopellet. Furthermore, pellets from the UASB system with modified settler showed a better settleability and biomass holding capacity. The chemical composition of biopellet was distinctively different from that of common bacterial formula, $C_5H_7O_2N$. Biopellets was composed the large fraction of nitrogen in comparison with common anaerobic microbes. These results implicated the existence possibility of polypeptide-type extracellular polymer. The morphological characterization with SEM showed that microorganisms observed at surface of biopellet produced in modified UASB reactor operated with high $P_{H_2}$ condition were very similar in shape and size to the Methanobrevibactor arboriphilus-$H_2$ utilizing methanogen. The microorganisms was distinguished from those of "control" reactor operated with low $P_{H_2}$ condition. From these results, it could be explained the hydrogen partial pressure effects on pelletization mechanism.