• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.576-580
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• 2017

In the present paper, the thermal deactivation characteristics of plate-type commercial $V_2O_5-WO_3/TiO_2$ SCR catalyst were investigated. For this purpose, the plate-type catalyst was calcined at different temperatures ranging from $500^{\circ}C$ to $800^{\circ}C$ for 3 hours. Structural and morphological changes were characterized byXRD, specific surface area, porosity, SEM-EDS and also NOx conversion with ammonia according to the calcine temperature. The NOx conversion decreased with increasing calcine temperature, especially when the catalysts were calcined at temperatures above $700^{\circ}C$. This is because the crystal phase of $TiO_2$ changed from anatase to rutile, and the $TiO_2$ grain growth and $CaWO_4$ crystal phase were formed, which reduced the specific surface area and pore volume. In addition, $V_2O_5$, which is a catalytically active material, was sublimated or vaporized over $700^{\circ}C$, and a metal mesh used as a support of the catalyst occurred intergranular corrosion and oxidation due to the formation of Cr carbide.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.297.2-297.2
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• 2013

Scavenging electricity from wasteful energy resources is currently an important issue and piezoelectric nanogenerators (NGs) based on zinc oxide (ZnO) are promising energy harvesters that can be adapted to various portable, wearable, self-powered electronic devices. Although ZnO has several advantages for NGs, the piezoelectric semiconductor material ZnO generate an intrinsic piezoelectric potential of a few volts as a result of its mechanical deformation. As grown, ZnO is usually n-type, a property that was historically ascribed to native defects. Oxygen vacancies (Vo) that work as donors exist in ZnO thin film and usually screen some parts of the piezoelectric potential. Consequently, the ZnO NGs' piezoelectric power cannot reach to its theoretical value, and thus decreasing the effect from Vo is essential. In the present study, c-axis oriented insulator-like sputtered ZnO thin films were grown in various temperatures to fabricate an optimized nanogenerator (NGs). The purity and crystalinity of ZnO were investigated with photoluminescence (PL). Moreover, by introducing a p-type polymer usually used in organic solar cell, it was discussed how piezoelectric passivation effect works in ZnO thin films having different types of defects. Prepared ZnO thin films have both Zn vacancies (accepter like) and oxygen vacancies (donor like). It generates output voltage 20 time lager than n-type dominant semiconducting ZnO thin film without p-type polymer conjugating. The enhancement is due to the internal accepter like point defects, zinc vacancies (VZn). When the more VZn concentration increases, the more chances to prevent piezoelectric potential screening effects are occurred, consequently, the output voltage is enhanced. Moreover, by passivating remained effective oxygen vacancies by p-type polymers, we demonstrated further power enhancement.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.144-151
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• 2021

In the present work, planar-type ZnO powder of [0001] plane with a high aspect ratio range of 20:1 to 50:1 was synthesized. Ag or CuO could be coated on the planar-type ZnO powder by wet methods such as centrifugation or ball milling. During the coating, the average size of the powder was slightly increased while maintaining the shape and XRD pattern of ZnO. When Ag or CuO was coated, the absolute value of the zeta potential, as well as the concentration of oxygen vacancy, was increased. Ag or CuO coated planar-type ZnO power exhibited excellent antibacterial performance, which seems to be related to their high electrostatic attraction force. They could be made into a masterbatch by mixing with ABS resin, and their applicability to antibacterial substances was confirmed by manufacturing the caps of a keyboard.

• Journal of the Korean Ceramic Society
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• v.38 no.9
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• pp.806-810
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• 2001

$La_{2/3}TiO_3$, $La_2Ti_2O_7$ are used in various parts by dielectric properties. The purpose of the present study is to understand the photoluminescence properties of $Al^{3+}\;and\;Pr^{3+}$ doped perovskite-type $La_{2/3}TiO_3$ and pyrochlore-type $La_2Ti_2O_7$ phosphor, which characterized by the red emission $(^1D_2{\rightarrow}^3H_4)\;of\;Pr^{3+}$ of $Pr^{3+}$ ion. The explanation for the energy transfer and the corresponding critical distance were proposed on the role of Al^3+ ions as energy transfer mediates in perovskite-type $La_{2/3}TiO_3$:Pr phosphor. In order to clarify the distinction of photoluminescence propoerties between the perovskite-type $La_{2/3}TiO_3$ and the pyrochlore $La_2Ti_2O_7$, the trap-involved process and the charge transfer band have been investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Communications of the Korean Mathematical Society
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• v.18 no.4
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• pp.603-613
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• 2003

When X is a threefold of general type, it is well known h/sup 0/(X, O/sub X/(nK/sub X/)) ≥ 1 for a sufficiently large n. When X(O/sub X/) 〉 0, it is not easy to obtain such an integer n. A. R. Fletcher showed that h/sup 0/(X, O/sub X/(nK/sub X/)) ≥ 1 for n = 12 when X(O/sub X/)=1. We introduce a technique different from A. R. Fletcher's. Using this technique, we also prove the same result as he showed and have a new result.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.860-863
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• 2007

ZnO nano film for transparent thin film transistors is prepared by injection type source delivery system of atomic layer deposition. By using this delivery system the source delivery pulse time can dramatically be reduced to 0.005s in ALD system. ZnO nanofilms obtained at $150^{\circ}C$ are characterized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.575-579
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• 2008

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Membrane Journal
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• v.9 no.2
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• pp.97-106
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• 1999

A and 2SM-5 type zeoli tic crystal films were synthesized on porous supports from the reaction mixture of 1.9 ${SiO}_2$1.5 $Na_20-Al_2O_3-40$ $H_20$ and $Si0_2$-0.l3 $Na_2O$-52 $H_20$-O.l2 TPAOH composition, respectively. The zeolite films were characterized by XRD and SEM. The 2SM -5 crystals grown on the porous matrix were very closely bound together. It was so difficult to obtain the perfectly intergrown crystals in the case of A-type zeolite and this crystal was transformed into P-type zeolite membrane with a prolonged reaction time. The densely intergrown A type zeolite crystal membrane could be also synthesized by the hydrothermal treatment at 100$^{\cirt}C$ after pressing the reaction mixture without addition of water. The pervaporation performance of the synthesized porous inorganic membranes was investigated for alcohol and water mixtures. A-type zeolite membrane crystallized as a thin film showed the selective \'Jermeability of water from the mixtures through the molecular sieving activity of micropores.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.17-21
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• 2001

We proposed that concentrations of cartier electron as well as ionized donor defects in nonstoichiometric ZnO are proportional to $P^{-1/2}_{O_2}$, whenever they ionizes singly or doubly, by employing the Fermi-Dirac (FD) statistics for ionization of the native thermal defects $Zn_i$ and $V_o$. The effect of acceptor defect, zinc vacancy $V_{Zn}$made by the Frenkel and Schottky disorder reactions, on carrier concentrations was discussed. By application of the FD statistics law to their ionization while the formation of defects is assumed governed by the mass-action law, the calculation results indicate; 1. ZnO shows n-type conductivity with $N_D>$N_A$ and majority concentration of $n{\propto}\;P^{-1/2}_{O_2}$ in a range of $P_{O_2}$, lower than a critical value. 2. As the concentration of acceptor $V_{Zn}$ increases proportional to $P^{1/2}_{O_{2}}$, ZnO made at extremely high $P_{O_{2}}$, can have p-type conductivity with majority concentration of p ${\propto}\;P^{-1/2}_{O_{2}}$. One may not, however, obtain p-type ZnO if the pressure for $N_{D}<$N_{A}$ is too high.