• Journal of the Korean Mathematical Society
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• v.50 no.2
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• pp.259-274
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• 2013

In this paper, we consider the Fourier-type functionals on Wiener space. We then establish the analytic Feynman integrals involving the ${\diamond}$-convolutions. Further, we give an approach to solution of the Schr$\ddot{o}$dinger equation via Fourier-type functionals. Finally, we use this approach to obtain solutions of the Schr$\ddot{o}$dinger equations for harmonic oscillator and double-well potential. The Schr$\ddot{o}$dinger equations for harmonic oscillator and double-well potential are meaningful subjects in quantum mechanics.

• Progress in Superconductivity and Cryogenics
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• v.8 no.1
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• pp.23-25
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• 2006

Optimization of process variables, including oxygen and water partial pressure and also an nesting temperature, was performed in batch-type process to fabricate YBCO films on LaAlO3 single crystal. In this work, YBCO oxide powder was used as a starting precursor for metal-organic deposition(MOD)method. The precursor films were fabricated in batch furnace and they were converted to the epitaxial YBCO films at the same furnace with varying the process variables. The oxygen partial pressure was varied from 100ppm to 2000ppm and the water partial pressure from 1.2% to 12.2%. The window for optimal P(O2) was narrow about 700ppm for batch-type process. YBCO films in bathc-thype MOD process were optimized at 740-770oC and P(H2O) of 2.3%-7.3%.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.1
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• pp.27-31
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• 2013

Copper-oxide (CuO) thin films were prepared by reactive sputtering of Cu onto Si wafers and characterized using a statistical design of experiments approach. The most significant factor in controlling the electrical resistivity and deposition rate was determined to be the $O_2$ fraction. The deposited CuO thin films were characterized in terms of their physical and chemical properties, using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), X-ray diffraction (XRD), and 4-point resistance measurements. The deposited copper thin films were characterized by XPS and XRD analyses to consist of $Cu^{2+}$. The CuO thin films of highest resistivity exhibited superior rectifying responses with regard to n-type Si wafers, with a current ratio of $3.8{\times}10^3$. These superior responses are believed to be associated with the formation of a charge-depletion region originating from the p-type CuO and n-type Si materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.419-420
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• 2008

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.243-243
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• 2007

We have studied the electrical properties and microstructure of $(Y_{0.5}Nd_{0.25}Sm_{0.25})Ba_2Cu_3O_y[(YNS)-123]$ Oxides by rod-type seeded melt growth process(RSMG) in air atmosphere. Rod-type $NdBa_2Cu_3O_y${Nd-123) seed crystals made a extrusion process method, were used for achieving the ab-plane alignment having large grains perpendicular to the center of (YNS)-123 samples. The observations using SEM and TEM micrographs of the melt-textured (YNS)-123 samples revealed that the nonsuperconducting $(Y_{0.5}Nd_{0.25}Sm_{0.25})Ba_2Cu_3O_y[(YNS)-211]$ inclusions are uniformly distributed in the superconducting matrix. The microstructure and electrical properties were investigated by XRD, SEM, TEM and DC SQUID magnetometer. The sample showed a sharp superconducting transition at 90 K. The magnetization values of the (YNS)-123 sample exhibited the enhanced electrical properties, compared with $YBa_2Cu_3O_y$(Y-123) sample.

• Journal of Welding and Joining
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• v.14 no.6
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• pp.93-100
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• 1996

Effect of a flux composition on weld metal toughness in submerged arc welding with 60kgf/$\textrm{mm}^2$ grade C-Mo type wires was investigated and interpreted in terms of weld metal microstructure and hardenability. Flux workability was also studied by characterizing a weld bead profile. Compared to other weld metals, .weld metal used alumina basic flux with nickel showed lowest oxygen content, highest hardenability and the most acicular ferrite. The highest impact toughness of that weld metal, however, was attributed to the tough matrix due to the nickel rather than to the larger amount of acicular ferrite. Manganese silicate flux had better workability than alumina basic flux, showing broader welding conditions resulting in a depth-to-width ratio of 0.5. The composition of oxides in the weld metal was dependent on the flux composition, showing MnO-SiO$_2$-TiO in manganese silicate flux and MnO-SiO$_2$-Al$_2$O$_3$-TiO in alumina basic flux. MnO-SiO$_2$composition in both oxides was similar to a tephroite.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.72-76
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• 1985

Single crystals of the compound MeI $(LiMoO_4)$ and $Me^I(LiWO_4)$ ($Me^I=K$, Rb, Cs) were synthesized by slow evaporation from aqueous solution and bycooling from melt. The compounds of potassium or rubidium are hygroscopic and they form easily hydrated crystals $Me^I LiMoO_4$.$H_2O$ or $Me^ILiMoO_4$.$H_2O$ or $Me^ILiWO_4$.$H_2O$ from aqueous solution. The structures of these hydrated crystals are each other isotypic and they are built up of distorted layers of $(LiMoO_5)$ or $(LiWO_5)$. There exist two types of tetrahedral framework structures in this group of anhydrous molybdates and tung-states ; tridymite-type and cristobalite-type. $KLiMoO_4$ and $KLiWO_4$ have two types of polymorphic structures where as only the cristobalite-type is found in the Rb-and Cs-compounds. The system $KLiSO_4-KLiMoO_4$ was studied. Two components are almost immiscible but there eixst a narrow area of solid solution on the side of sulfate in the system.

• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.44-50
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• 1986

Si-ZnO n-n heterojunction diodes were prespared by r.f diode sputtering of the sintered ZnO target on n-type Si single crystal wafers and their structures and electrical properties were studied. The films were grown orientedly with the c-axis of crystallites perpendicular to the substrate surface at low r.f. powder and grown to polycrystalline films with random orientation at high r. f. powder. The crystallite size increased with the increasing substrate temperture The oriented texture films only were used to prepare the photovoltaic diodes and these didoes showed the photovoltaic effect veing positive of the ZnO side for the photons in the wavelength range of 380-1450nm. The sign reversal of phootovoltage which is the property os isotype heterojunction was not observed because of the degeneration of the ZnO films. The diode showed the forward rectification when it was biased with the ZnO side positive. The current-voltage characteristics exhibited the thermal-current type relationship J∝exp(qV/nkT) with n=1.23 at the low forward bias voltage and the tunnelling-current type relationship J∝exp($\alpha$V) where $\alpha$ was constant independent of temperature at the high forward bias voltage. The crystallite size of ZnO films were influenced largely on the photovoltaic properties of diodes ; The diodes with the films of the larger crystallites showed the poor photovoltaic properties. This reason may be cosidered that the ZnO films with the large crystallites could not grow to the electrically continuous films because the thickness of films was so thin in this experiment.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1999.11a
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• pp.17-22
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• 1999

In this paper a new discharge type ozonizer comprising the superpose operation of silent and surface discharge is presented. The ozonizer consists of two concentric glass tubes with three type of discharge electrodes : the external electrode(EE), the internal electrode(IE) and the central electrode(CE). By varying the structure of IE and materials of CE, we analyzed the characteristics of ozone related different parameters including $O_{3con}$, $O_{3g}$, and $O_{3Y}$. Using Cu made CE it was found the O3con is higher with Cu tape than that with Cu coil wound IE. At Q = 1[l/ min] the values of O3con were found as 3000[ppm] with Cu tape wound IE and 1898[ppm] with Cu coil wound IE. Then using SUS wire made CE with Cu tape wound IE at Q = 1[ι/ min] the maximum value of O3con was found as 5632[ppm]. It was observed that both $O_{3con}$ and $O_{3y}$ are higher with SUS made CE than that with Cu made CE. The maximum values of $O_{3Y}$ were found as 79[g/kWh] with Cu made CE and 170[g/kWh] with SUS wire made CE.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.424-424
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• 2012

나노 구조의 반도성 산화물은 독특한 구조적 특성으로 전기적, 광학적 특성을 향상 시킬 수 있다. 현재 연구되고 있는 나노 구조의 반도성 산화물 중 Zinc oxide (ZnO)는 3.37 eV의 bandgap를 갖는 wurtzite 구조체로서 상온에서 60 meV의 exciton binding energy 등 우수한 특성으로 인하여 최근 많이 연구되고 있다. 특히 단파장 light emitting diode 재료로써 기대를 모으고 있는데, 이를 실현하기 위한 가장 큰 문제점이 바로 안정적인 p-type ZnO 박막의 제조이다. 지금까지 알려진 바에 따르면 P를 doping한 후 급속 열처리한 경우 p-type의 전기전도도를 갖는 ZnO 박막을 제조할 수 있다고 보고되어 있으나 vacancy 농도에 따른 불안정적인 요소가 해결해야 할 문제로 남아 있다. 최근 Ag를 doping 시킨 ZnO 박막의 p-type 반도체로서 가능성에 대한 보고가 제기되고 있다. 합성 방법과 조건에 따라서 수 nm에서 수십 또는 수백 nm 크기의 구형 입자나, 리본, 와이어, 로드 그리고 꽃모영 등 다양한 형상을 갖는 나노 구조체를 합성 할 수 있다. 본 연구에서는 ZnO:Ag 박막을 radio-frequency sputtering 방법으로 증착하여 그 물성을 분석하였다. 보통의 sputtering 증착법에서 사용되는 sintering된 타겟과 달리 본 실험은 분말 타겟을 이용하여 박막을 증착하였다. 타겟은 95 wt% ZnO와 5 wt% Ag를 서로 혼합하여 제조하였다. 본 발표에서는 박막의 증착압력 및 증착 온도의 변화에 따른 ZnO:Ag 박막의 구조적, 광학적 특성에 대하여 논의 할 것이다.