• Bulletin of the Korean Chemical Society
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• v.25 no.2
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• pp.289-292
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• 2004

A trisaccharide, GlcNAcp- ${\beta}-(1{\to}3)-Galp-{\alpha}-(1{\to}2)$-6-deoxy-altroHepp- ${\alpha}-(1{\to}O$-propyl, as an O-antigenic repeating unit of C. jejuni serotype O:23 and O:36 was synthesized. Coupling of the GlcNPhth-(1${\to}$3)-Gal disaccharide donor with allyl 6-deoxy-altroHep acceptor in the presence of iodonium dicollidine perchlorate (IDCP) promoter afforded the ${\alpha}$-galactosidic trisaccharide with high stereoselectivities. Subsequent deacetalation, dephthaloylation, N-acetylation, and hydrogenolytic debenzylation furnished the title compound.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.05a
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• pp.55-56
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• 2000

• Journal of Oriental Neuropsychiatry
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• v.5 no.1
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• pp.33-39
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• 1994

From the consideration of stages and their origins assigned to the five elements by connecting O-Shin(五神) with the five organs, centered on former documents, following were achieved. 1. From the age of civil wars, the mind has been connected to the part icular organ among the five organs : the has been considered as the main body of mind activity and the central organ which controls eve ry organ. 2. KWAN-JA(管子) and JANG-JA(莊子) wrote firstly written in connection between the mind and the whole five organs. 3. O-SHIN(五神) were materialized through the middle part and last year of Former China and after the five organs assignment of the natur e and the emotions. 4. O-SHIN(五神) orignated from HWANG-JE NAE-KYUNNG(黃帝內經) assigned as the liver soul, the heart spirit, the spleen ideas, the lung inferior spirit, and the kidney will.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1487-1489
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• 1994

$(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$ system which has a dielectric constant, low dielectric loss and temperature coefficient was investigated. Temperature coefficient varied from positive to negative with increasing of NiO. For the NiO content 1.0wt%. i.e $(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$, the ceramic showed very good dielectric properties such as ${\epsilon}$=37.8, $Q{\times}f_o=49.000$ and ${\tau}_r= 4{\pm}1ppm/^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.14 no.2
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• pp.188-191
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• 1993

The reaction between methyl 2,3-di-O-benzyl-4,6-di-O-mesyl-${\alpha}$-D-glucopyranoside (1b) and potassium superoxide resulted in hydrolysis, and gave methyl 2,3-di-O-benzyl-${\alpha}$-D-glucopyranoside (1) as a sole product. When the reaction was performed with a vicinal dimesylate, methyl 4,6-O-benzylidene-2,3-di-O-mesyl-${\alpha}$-D-altropyranoside (4b), again the hydrolysis product, methyl 4,6-O-benzylidene-${\alpha}$-D-altropyranoside (4) was obtained. However, the reaction of potassium superoxide with another vicinal dimesylate, methyl 4,6-O-benzylidene-2,3-di-O-mesyl-${\alpha}$-D-glucopyranoside (3b), nucleophilic displacement took place to afford methyl 4,6-O-benzylidene-${\alpha}$-D-altropyranoside (4). Apparently different results from two trans vicinal dimesylates, 3b and 4b are explained by the transient formation of epoxides, methyl 2,3-anhydro-4,6-O-benzylidene-${\alpha}$-D-allopyranoside (8) and methyl 2,3-anhydro-4,6-O-benzylidene-${\alpha}$-D-mannopyranoside (9) by $KO_2$. The reaction between the allo epoxide 8 and $KO_2$ gave altro 4. The manno epoxide 9 also afforded altro 4 as the major product. Facile epoxide formation by the reaction of a vicinal dimesylate and superoxide was also observed with 3-O-benzyl-1,2-O-isopropylidene-5,6-di-O-mesyl-${\alpha}$-D-glucofuranose: 5,6-anhydro-3-O-benzyl-1,2-O-isopropylidene-${\beta}$-L-idofuranose was obtained.

• Archives of Pharmacal Research
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• v.27 no.2
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• pp.143-150
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• 2004

A trisaccharide, the O-antigenic repeating unit of C. jejuni serotype O:23 and O:36, was synthesized as a 2 -azidoethyl glycoside by block addition of perbenzylated thiogalactoside donors to $\alpha$-altroHepp-(1$\rightarrow$3)-GlcNPhth disaccharide acceptor in presence of IDCP promoter. The $\alpha$-linked altroheptopyranoside moiety in the glycosyl acceptor was effectively prepared by Swern oxidation of $\alpha$-mannohepp-(1$\rightarrow$3)-GlcNPhth disaccharide followed by mild reduction with1 $NaCNBH_3$.

• Journal of the Korean Society of Safety
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• v.21 no.2 s.74
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• pp.35-45
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• 2006

Cobalt catalysts for gas mask loaded on various supports such as $Al_{2}O_{3},\;TiO_{2}$, AC(activated carbon) and $SiO_{2}$ were used to examine influences of calcination temperatures and reaction temperatures for CO oxidation. $Co(NO_{3})_2{\cdot}6H_{2}O$ was used as cobalt precursor and the catalysts were prepared by incipient wetness impregnation. The catalysts were characterized using XRD, TGA/DTA, TEM, $N_{2}$ sorption, and XPS. For the catalytic activity, support was in the order of ${\gamma}-Al_{2}O_{3}>TiO_{2}>SiO_{2}>AC\;and\;Al_{2}O_{3}$. The catalytic activity at lower temperature than $80^{\circ}C$ showed that with the increase of reaction temperature, cobalt catalysts on ${\gamma}-Al_{2}O_{3},\;TiO_{2},\;AC\$ has the negative activation energy but that of $SiO_{2}$ was positive.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.350-350
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• 2007

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.427-435
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• 2014

Segmented-channel MOSFETs (SegFETs) can achieve both good performance and variation robustness through the use of $HfO_2$ (a high-k material) to create the shallow trench isolation (STI) region and the very shallow trench isolation (VSTI) region in them. SegFETs with both an HTI region and a VSTI region (i.e., the STI region is filled with $HfO_2$, and the VSTI region is filled with $SiO_2$) can meet the device specifications for high-performance (HP) applications, whereas SegFETs with both an STI region and a VHTI region (i.e., the VSTI region is filled with $HfO_2$, and the STI region is filled with $SiO_2$) are best suited to low-standby power applications. AC analysis shows that the total capacitance of the gate ($C_{gg}$) is strongly affected by the materials in the STI and VSTI regions because of the fringing electric-field effect. This implies that the highest $C_{gg}$ value can be obtained in an HTI/VHTI SegFET. Lastly, the three-dimensional TCAD simulation results with three different random variation sources [e.g., line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)] show that there is no significant dependence on the materials used in the STI or VSTI regions, because of the predominance of the WFV.

• Journal of applied mathematics & informatics
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• v.11 no.1_2
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• pp.317-326
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• 2003

We classify all possible level Artinian O-sequences of socle degree 5 and type 3. Moreover, we show how to construct level Artinian algebras with those Hilbert functions using the sum of two ideals of finite sets of points in $P^2$ such that the ideal of the union of two sets is level.