• Journal of the Korean Society for Heat Treatment
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• v.19 no.2
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• pp.90-95
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• 2006

Nitriding or carburizing of carbon steels results in good mechanical properties such as high surface hardness and wear resistance but it has no affection on the corrosion resistance. Corrosion properties of nitriding and carburizing steels could be deteriorated. So, recently, there have been great demand for oxi-nitriding to enhance both mechanical properties and corrosion resistance. In this study, the corrosion resistance of carbon steel, S35C, and free cutting steel, SUM222, are prepared by vacuum nitriding and vacuum post-oxidation were compared with those treated by nitriding. After vacuum post-oxidation, $5{\mu}m$ oxide layer was formed on the nitride layer with $20{\sim}30{\mu}m$ depth. Potentio-dynamic polarization curve in corrosion test showed that the corrosion potential after post oxidation was increased from 200 mV to 800 mV in S35C and from 600 mV to 1200 mV in SUM222. SEM analyses showed that pores was increased and surface roughness became rougher with post oxidation. However, the formation of $Fe_3O_4$ resulted in the enhanced corrosion resistance of steels.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.383-385
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• 1989

Nitrided oxides have been recently investigated for the application as a replacement of thermally grown $SiO_2$in the MIS devices. In this paper, thin oxides were nitrided in the $N_2$plasma ambient. After B - T stress is performed on the sample, it was noticed that the current density is increased. From the I - V measurement, dominant conduction mechanism of oxynitride films appeared to be Fowler - Nordheim emission. And also its breakdown strength is increased about 2.2 MV/cm compared with the oxide films.

• Corrosion Science and Technology
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• v.8 no.6
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• pp.227-231
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• 2009

Mg and Mg alloys have been used for lots of applications, including automobile industry, aerospace, mobile phone and computer parts owing to low density. However, Mg and Mg alloys have a restricted application because of poor corrosion properties. Thus, improved surface treatments are required to produce protective films that protect the substrate from corrosive environments. Environmental friendly Plasma Electrolytic Oxidation (PEO) has been widely investigated on magnesium alloys. PEO process combines electrochemical oxidation with plasma treatment in the aqueous solution. In this study, AZ91 Mg alloys were treated by PEO process in controlling the current with PC condition and treated time, concentration of NaF, NaOH, and $Na_2SiO_3$. The surface morphology and phase composition were analyzed using SEM, EDS and XRD. The potentiodynamic polarization tests were carried out for the analysis of corrosion properties of specimen. Additionally, salt spray tests were carried out to examine and compare the corrosion properties of the PEO treated Mg alloys.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.183-184
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• 2009

자체 발광형 디스플레이는 잠재적인 장점에도 불구하고 수분에 대한 열화와 같은 기술적인 문제로 상업화하기 어려움이 있어 수분 투습 방지막이 필요하다. 이에 본 연구에서는 작은 결점 크기와 낮은 결점 밀도를 가지는 $TiO_2$ 보호막을 PEALD법으로 증착 하여 $N_2$와 $NH_3$ plasma 처리에 따른 표면 효과를 알아보았다.

• CELLMED
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• v.2 no.3
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• pp.25.1-25.6
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• 2012

The aim of the present study was to evaluate the possible roles of hyperforin against hyperglycemia, hyperlipidemia and oxidative stress in streptozotocin-induced diabetic rats. Diabetes was induced by a single intraperitoneal injection of streptozotocin (65 mg/kg). Biochemical parameters were measured following hyperforin treatment (10 mg/kg, i.p.) for 7 days. Hyperforin treatment significantly reversed the elevations in plasma glucose, triglycerides, total cholesterol and LDL-cholesterol. Hyperforin also reversed the declines in plasma HDL-cholesterol and liver glycogen, but did not reverse the change in plasma insulin levels when compared to the diabetic control rats. Hyperforin treatment also reversed the oxidative stress induced by streptozotocin. Moreover, the effect of the hyperforin on peripheral glucose utilization in normal rats was evaluated by an oral glucose tolerance test (OGTT). Hyperforin treatment significantly increased (p < 0.05) the glucose tolerance compared to the vehicle in OGTT. The antihyperglycemic, antihyperlipidemic and antioxidant activities of hyperforin (10 mg/kg, i.p.) were comparable qualitatively to glibenclamide (1 mg/kg, p.o.). In conclusion, we report for the first time through an in vivo study that hyperforin is potentially valuable for the treatment of diabetes and its associated hyperlipidemia and oxidative stress by enhancing the glucose utilization by peripheral tissues such as muscle and adipose tissues.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.267-267
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• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films have been of interest due to their lower dielectric constant and compatibility with existing process tools. However instability issues related to bond and increasing dielectric constant to water absorption when the SiOF films was exposured to atmospheric ambient. Therefore, the purpose of this research is to study the effect of post oxygen plasma treatment on the resistance of moisture absorption and reliability of SiOF film. Improvement of moisture absorption resistance of SiOF film is due to the forming of thin SiO₂layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the number of Si-F bonds that tend to associate with OH bonds. However, the dielectric constant was increased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and 300℃ of substrate temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.283.2-283.2
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• 2016

최근 ZnO는 무독성, 저가격, 수소 플라즈마에 대한 내구성 및 열적 안정성 등의 활발히 연구되고 있으며, III족 원소(Al, Ga, In) 불순물을 도핑하여 전기적 성질의 열적 불안정성을 해결하고 전기적 성질을 향상 시키고 또한 밴드갭 에너지가 3.3 eV 이상으로 증가하여 가시광선 영역에서 광투과율이 높은 투명도 전성 재료를 제공할 수 있다. 본 연구에서는 RF Magnetron Sputtering을 이용하여 내열성과 광학적 측면에서 우수한 성능을 가지는 PES 기판에 표면 에너지를 높이고 치밀한 구조의 박막을 증착하기 위해서 $O_2$ 플라즈마 처리를 하여 ZnO계 투명 전도막을 제작함으로써 투명전극에서 요구하는 $10^{-3}{\Omega}{\cdot}cm$ 이하의 낮은 비저항과 80% 이상의 광투과율을 가지는 방안에 대하여 연구하였다. PES 기판 위에 고밀도 $O_2$ 플라즈마를 이용하여 전 처리를 실시한 후 4인치의 Al-doped ZnO(ZnO 98 wt% : $Al_2O_3$ 2 wt%), AZO의 타겟을 이용하여 상온에서 RF Magnetron Sputtering 법으로 AZO 박막을 증착하였다. PES 기판상의 AZO 박막 두께가(100~400nm) 증가함에 따라 캐리어 농도와 홀 이동도가 점차 증가하는 경향을 보였다. 이는 박막 두께가 증가할수록 면저항과 비저항은 감소하며 결정립 크기가 커지고 결정입계에서 산란이 줄어들기 때문에 전기적 특성이 개선된 것으로 판단된다. 고밀도 $O_2$ 플라즈마 표면처리 시간이 증가함에 따라 플라스틱 기판의 결합에너지와 부착력이 증가하여 AZO 박막의 결정립 크기를 증가시키며, 접촉각은 감소하였다. 또한 급속열처리 온도가 증가함에 따라 전기적 특성과 광학적 특성이 향상됨을 확인할 수 있었다. 제작된 AZO 박막은 급속열처리 시간 10분에서 온도 $200^{\circ}C$일 때, 캐리어 농도 $2.32{\times}10^{21}cm^{-3}$, 홀 이동도 $4.3cm^{-2}/V$로 가장 높은 것을 확인할 수 있었고, 가장 낮은 비저항 $1.07{\times}10^{-3}{\Omega}{\cdot}cm$과 가시광 영역(300 nm ~ 1100 nm)에서의 AZO 박막의 광 투과율은 약 86%를 얻을 수 있었다.

• Journal of the Korean institute of surface engineering
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• v.53 no.3
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• pp.124-129
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• 2020

This study is for the development of high temperature ALD SiO₂ film process, optimized for gap-fill process in manufacturing memory products, using a space-divided PE-ALD system equipped with an independent control dual plasma system and orbital moving unit. Space divided PE-ALD System has high productivity, and various applications can be applied according to Top Lid Design. But space divided ALD system has a limitation to realize concentric deposition map due to process influence due to disk rotation. In order to solve this problem, we developed an orbit rotation moving unit in which disk and wafer. Also we used Independent dual plasma system to enhance thin film properties. Improve productivity and film density for gap-fill process by having deposition and surface treatment in one cycle. Optimize deposition process for gap-fill patterns with different depths by utilizing our independently controlled dual plasma system to insert N₂and/or He plasma during surface treatment, Provide void-free gap-fill process for high aspect ratio gap-fill patterns (up to 50:1) with convex curvature by adjusting deposition and surface treatment recipe in a cycle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1078-1084
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• 2006

Impurity contamination induced by $CF_4\;and\;HBr/Cl_2/O_2$ plasma etching on Si surface was examined by using surface spectroscopes. XPS(x-ray photoelectron spectroscopy) surface analysis showed that F of 0.4 at % exists in the surface layer in the form of Si-F bonding but Br and Cl are below the detection limit $(0.1{\sim}1.0%)$ of the spectroscope. Static-SIMS(secondary ion mass spectrometry) surface analysis showed that the etched Si surface was contaminated with etching gas elements such as H, F, Cl and Br, and they existed to the depth of about $20{\sim}40nm$. The etched Si surface was treated with three different methods that were HF dip, thermal oxidation followed by HF dip and oxygen-plasma oxidation followed by HF dip. They showed an effect in reducing the impurity contamination and the oxygen-plasma oxidation followed by HF dipping method appears to be a little bit more effective.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.131-134
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• 1998

The deposition rate and surface morphology of Al films deposited by MOCVD have been studied on the $SiO_{2}$ and TiN(60nm/Si) substrates. A1 films were deposited with the pyrolysis of dimethylethylamine alane(DMEAA). When A1 was deposited on Ti& substrate without carrier gas, Al deposition rate increased with H\ulcorner pre- treatment. The $H_2$ gas enhances the CVD reaction at the substrate surface. When Al was deposited on $SiO_{2}$ substrate, $H_2$ plasma pretreatment reduced Al incubation time and made a dense Al film compared with Ar plasma pre- treatment or no pretreatment.