• 열처리공학회지
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• 제17권2호
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• pp.87-93
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• 2004

Nitrocarburizing was carried out with various $CH_4$ gas composition with 4 torr gas pressure at $570^{\circ}C$ for 3 hours and post oxidation was carried out with 100% $O_2$ gas atmosphere with 4 torr at different temperatures for various time. In the case of plasma nitrocarburizing, It is that the ratio of ${\varepsilon}-Fe_{2-3}$(N, C) and ${\gamma}^{\prime}-Fe_4$(C, N), which comprise the compound layer phase, depend on concentrations of $N_2$ gas and $CH_4$ such that when the concentration of $N_2$ and $CH_4$ increased, the ratio of ${\gamma}^{\prime}-Fe_4$(C, N) decreased, but the ratio of ${\varepsilon}-Fe_{2-3}$(N, C) increased. The thickness of compound layer consistently increased as gas concentration increased regardless of $N_2$ and $CH_4$ expect when the concentration of $CH_4$ was 3.5 volume%, it decreased insignificantly. When oxidizing for 15min in the temperature range of $460{\sim}570{^\circ}C$, the study found small amount of $Fe_3O_4$ at the temperature of $460{^\circ}C$ and also found that amounts of $Fe_2O_3$. and $Fe_3O_4$ on the surface and amount of ${\gamma}^{\prime}-Fe_4$(C, N) in the compound layer increased as the increased over $460^{\circ}C$, but the thickness of the compound layer decreased. Corrosion resistance was influenced by oxidation times and temperature.

• 한국재료학회지
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• 제23권1호
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• 한국식품영양과학회지
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• 제40권1호
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• pp.123-127
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• 2011

김치 제조 공정에서 사용되는 김치 절임수의 미생물학적 안전성 확보와 재활용을 위한 연구로써, 본 연구에서는 microwave plasma sterilization system을 이용한 김치 절임수의 미생물 수 저감화를 위하여, E. coli O157:H7, L. monocytogenes, S. Typhimurium에 대한 살균 효과를 측정하고, 또한 사용한 김치 절임수에 본 장치를 적용하였다. 김치 공장에서 반복 사용한 절임수에 있는 coliform, E. coli, Salmonella spp., total aerobic bacteria, yeasts and molds가 사용 횟수가 늘어남에 따라 미생물 수가 증가하였다. Microwave plasma를 이용한 살균처리에서는 E. coli O157:H7, L. monocytogenes, S. Typhimurium의 $D_{10}$-value가 0.48, 0.52, 0.45 cycle로 각각 측정되었고, 또한 1회 사용한 절임수에 microwave plasma sterilization system 적용 시, coliform, E. coli, Salmonella spp., total aerobic bacteria, yeasts and molds 숫자가 유의적으로 감소하였다. 따라서 본 연구 결과, 김치공장의 김치 절임수를 재사용하기 위해서 microwave plasma sterilization system을 이용한 살균방법이 적합하다고 판단된다.

• 열처리공학회지
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• 제20권5호
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• pp.231-236
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• 2007

High velocity oxy-fuel (HVOF) spraying was used to coat Ti(Al,O)/$Al_2O_3$ powder onto the SS41 steel plate. Macrostructure of the coated specimen has been investigated by scanning electron micrograph (SEM). High temperature oxidation behavior of the coated specimen and SS41 steel have been studied. From the results of SEM observation, Ti(Al,O)/$Al_2O_3$ powder was coated well onto the substrate SS41 steel. Porosity onto the coated layer was only 0.38%. The oxidation results showed that Ti(Al,O)/$Al_2O_3$ powder coated SS41 steel have improved little oxidation resistance at $900^{\circ}C$ in air, but improved remarkably oxidation resistance at $800^{\circ}C $ in air compare to the substrate SS41 steel.

• 한국재료학회지
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• 제27권9호
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• pp.495-500
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• 2017

Oxide layers were formed by an environmentally friendly plasma electrolytic oxidation (PEO) process on AZ91 Mg alloy. PEO treatment also resulted in strong adhesion between the oxide layer and the substrate. The influence of the KF electrolytic solution and the structure, composition, microstructure, and micro-hardness properties of the oxide layer were investigated. It was found that the addition of KF instead of KOH to the $Na_2SiO_3$ electrolytic solution increased the electrical conductivity. The oxide layers were mainly composed of MgO and $Mg_2SiO_4$ phases. The oxide layers exhibited solidification particles and pancake-shaped oxide melting. The pore size and surface roughness of the oxide layer decreased considerably with an increase in the concentration of KF, while densification of the oxide layers increased. It is shown that the addition of KF to the basis electrolyte resulted in fabricating of an oxide layer with higher surface hardness and smoother surface roughness on Mg alloys by the PEO process. The uniform thickness of the oxide layer formed on the Mg alloy substrates was largely determined by the electrolytic solution with KF, which suggests that the composition of the electrolytic solution is one of the key factors controlling the uniform thickness of the oxide layer.

• 한국재료학회지
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• 제28권9호
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• pp.511-515
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• 2018

W-10 wt% Ti alloys that have a homogeneous microstructure are prepared by thermal decomposition of $WO_3-TiH_2$ powder mixtures and spark plasma sintering. The reduction and dehydrogenation behavior of $WO_3$ and $TiH_2$ are analyzed by temperature programmed reduction and a thermogravimetric method, respectively. The X-ray diffraction analysis of the powder mixture, heat-treated in an argon atmosphere, shows W- oxides and $TiO_2$ peaks. Conversely, the powder mixtures heated in a hydrogen atmosphere are composed of W, $WO_2$ and $TiO_2$ phases at $600^{\circ}C$ and W and W-rich ${\beta}$ phases at $800^{\circ}C$. The densified specimen by spark plasma sintering at $1500^{\circ}C$ in a vacuum using hydrogen-reduced $WO_3-TiH_2$ powder mixtures shows a Vickers hardness value of 4.6 GPa and a homogeneous microstructure with pure W, ${\beta}$ and Ti phases. The phase evolution dependent on the atmosphere and temperature is explained by the thermal decomposition and reaction behavior of $WO_3$ and $TiH_2$.

• 대한환경공학회지
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• 제27권8호
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• pp.859-869
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• 2005

소각장 off gas에 장기간 노출이 되어 활성이 저하된 상용 $V_2O_5-WO_3/TiO_2$ aged 촉매를 물리화학적 방법으로 재생 처리를 수행한 후, 재생 처리에 따른 촉매의 물성 변화를 확인하고 이에 따른 촉매 활성변화를 고찰하였다. 촉매의 특성분석은 XRD(x-ray diffractometer), BET, POROSIMETER, EDX(energy dispersive x-ray spectrometer), ICP(inductively coupled plasma), TGA(thermogravimetric Analyze,), SEM(scanning electron microscopy)등을 이용하여 수행하였고 NOx 전환반응실험은 소각장 off gas를 모사하여 $NH_3$에 의한 SCR 반응을 통해 수행하였다. 본 연구에서 수행된 재생처리 방법 중, 열처리 방법으로 재생처리를 수행 할 경우 fresh 촉매환성의 95% 이상을 회복하였으며, 화학적 재생 처리 방법으로는 산성용액의 경우는 pH가 5인 용액으로 재생 처리된 촉매가, 염기성 용액의 경우는 pH가 12인 용액으로 재생 처리된 촉매가 fresh 촉매활성의 90% 이상의 촉매 활성을 회복 하였다. 촉매 특성 분석 결과, 상기와 같은 방법으로 재생 처리된 촉매의 경우 비표면적은 fresh 촉매의 $85{\sim}95%$ 수준으로 회복 되었으며, aged 촉매 표면에 축적되어 있던 촉매 비활성 물질로 잘 알려진 황(S)이나 칼슘(Ca)등은 최대 99%이상 제거 되었다. Aged 촉매 표면상의 인(P), 크롬(Cr), 아연(Zn) 등과 같은 중금속의 경우는 최대 95% 이상 제거 되었으나 납(Pb)의 경우는 제거율이 $10{\sim}30%$ 수준으로 매우 미흡한 것으로 나타났다.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2002년도 제24회 KOSCO SYMPOSIUM 논문집
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• pp.157-162
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• 2002

The characteristics of DeNOx conversion process by plasma/post-heating system with the simulated gas containing ethene is investigated experimentally. Without plasma treatment, $NO-NO_2$ conversion doesn't occur by $400^{\circ}C$ in a mixture of $N_2/O_2$ with a trace gas of ethene. But $NO-NO_2$ conversion occurs as temperature increases above $400^{\circ}C$. The NO can, however, be converted to $NO_2$ at lower temperatures by treating the gas mixture with non-thermal plasma. The $NO-NO_2$ conversion enhances further by passing the plasma treated gas through the post-heating furnace. Results show that 20%${\sim}50%$ more conversion of NO to $NO_2$ is observed when the temperatures of the post-heating furnace are maintained at $300^{\circ}C$ or $400^{\circ}C$. The additional $NO-NO_2$ conversion by post-heating is due to the reaction of ethene with the byproducts or radicals generated from the plasma reaction.

• 한국축산식품학회지
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• 제32권5호
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• pp.561-570
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• 2012

The objective of this study was to evaluate the effects of an atmospheric pressure plasma (APP) jet on L. monocytogenes inactivation, quality characteristics, and genotoxicological safety of cooked egg white and yolk. APP treatment using He gas resulted in a 5 decimal reduction in the number of L. monocytogenes in cooked egg white, whereas that using $He+O_2$, $N_2$, and $N_2+O_2$ decreased the number further, and to undetectable levels. All treatments of cooked egg yolk resulted in undetectable levels of inoculated L. monocytogenes. There were no viable cells of total aerobic bacteria after APP treatment on day 0 while the control showed approximately 3-4 Log CFU/g. On day 7, the numbers of total aerobic bacteria had increased by approximately 3 log cycles in cooked egg white, but there were no viable cells in cooked egg yolk after 2 min of APP jet. APP treatment decreased the $L^*$-values of cooked egg white and yolk significantly on day 0. No significant sensory differences were found among the cooked egg white samples, whereas significant reductions in flavor, taste, and overall acceptability were found in cooked egg yolks treated with APP jets. SOS chromotest did not reveal the presence of genotoxic products following APP treatments of cooked egg white and yolk. Therefore, it can be concluded that APP jets can be used as a non-thermal means to enhance the safety and extend the shelf-life of cooked egg white and yolk.

• 한국재료학회지
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• 제27권12호
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• pp.699-704
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• 2017

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.