• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1147-1149
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• 1993

ZnO/$SnO_2$:F bilayer films have been prepared by pyrosol deposition method to develop optimum transparent electrode for use in amorphous silicon solar cells. The solution for $SnO_2:F$ film was composed of $SnCl_4{\cdot}5H_2O,\;NH_4F,\;CH_3OH$ and HCl, and ZnO films have been deposited on the $SnO_2:F$ films by using the solution of $ZnO(CH_3COO){_2}{\cdot}2H_2O,\;H_2O\;and\;CH_3OH$. These films have been investigated the variation of electrical and optical properties under the hydrogen plasma exposure. The sheet resistance of the $SnO_2:F$ film was sharply increased and its transmittance was decreased with the blackish effect after plasma treatment. However, the ZnO/$SnO_2:F$ bilayer film was shown hydrogen plasma durability because the electrical and optical properties was almost unchanged more then 60 seconds exposure time.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1582-1584
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• 2008

This paper reports a simple fabrication method for creating the superhydrophobic polymer surface using a plasma etching. Generally, it is necessary for the superhydrophobic surfaces to have a rough structure on surface with the composition of the low surface energy. In this study, Poly(methyl methacrylate) (PMMA), poly(ethylene terephthalate) (PET), acrylonitrile butadiene styrene (ABS) with superhydrophobic surface were fabricated using $O_2$ plasma etching and vapor deposition with the fluoroalkylsilane self-assembled monolayers. The plasma treated polymer surfaces are covered with the nano-pillar shaped structures after treatment for $1{\sim}2min$. And these samples with FOTS SAMs coating are showed the superhydrophobicity having the water contact angle of around $150^{\circ}$ and sometimes around $180^{\circ}$ depending on the treatment time. Furthermore the nanostructured polymer is transparent for the visible light.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.59-62
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• 2017

In this paper, atmospheric pressure plasma treatment was proposed for high performance indium gallium zinc oxide thin film transistor (IGZO TFT). RF Ar plasma treatment is performed at room temperature under atmospheric pressure as a simple and cost effective channel surface treatment method. The experimental results show that field effect mobility can be enhanced by $2.51cm^2/V{\cdot}s$ from $1.69cm^2/V{\cdot}s$ to $4.20cm^2/V{\cdot}s$ compared with a conventional device without plasma treatment. From X-ray photoelectron spectroscopy (XPS) analysis, the increase of oxygen vacancies and decrease of metal-oxide bonding are observed, which suggests that the suggested atmospheric Ar plasma treatment is a cost-effective useful process method to control the IGZO TFT performance.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.259-265
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• 2006

We measured sputtering yield of RF $O_2-plasma$ treated MgO protective layer for AC-PDP(plasma display panel) using a Focused ion Beam System(FIB). A 10 kV acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 nm, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.30-33
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• 2006

Transparent indium tin oxide (ITO) anode surface was modified using $O_3$ Plasma and organic ultrathin buffer layers were deposited on the ITO surface using 13.56 MHz RF plasma polymerization technique. The EL efficiency, operating voltage and lifetime of the organic light-emitting device (OLED) were investigated in order to study the effect of the plasma surface treatment and role of plasma polymerized organic ultrathin buffer layer. Poly methylmethacrylate (PMMA) layers were plasma polymerized on the ITO anode as buffer layer between anode and hole transport layer (HTL). The plasma polymerization of the organic ultrathin layer were carried out at a homemade capacitive-coupled RF plasma equipment. N,N'-diphenyl-N,N'(3- methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as HTL, Tris(8-hydroxyquinolinato) Aluminum $(Alq_3)$ as both emitting layer (EML)/electron transport layer (ETL), and aluminum layer as cathode were deposited using thermal evaporation technique. Effects of the plasma surface treatment of ITO and plasma polymerized buffer layers on the OLED performance were discussed.

• Korean Journal of Metals and Materials
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• v.49 no.3
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• pp.270-274
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• 2011

Plasma electrolytic oxidation (PEO) treatment was performed on squeeze cast AZ31 alloy and $Al_{18}B_4O_{33}w/AZ31$ composite. Scanning electron microscope (SEM) was employed to characterize the surface morphology and cross-section microstructure of the coating. The phase structures of the PEO coating were analyzed by X-ray diffraction (XRD). The corrosion resistance of the PEO coating was evaluated by electrochemical method. The results showed that the $Al_{18}B_4O_{33}$ whisker on the surface of the composite was decomposed and $MgAl_2O_4$ was formed in the PEO coating layer of $Al_{18}B_4O_{33}w/AZ31$ composite during PEO treatment. As a result, the electrochemical corrosion potential of the PEO coated $Al_{18}B_4O_{33}w/AZ31$ composite was increased compared with that of AZ31 alloy.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.121-121
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• 2011

Graphene formed by chemical vapor deposition was exposed to the various plasmas of Ar, O2, N2, and H2 to examine its effects on the bonding properties of graphene to metal. Upon the Ar plasma exposure of patterned graphene, the subsequently deposited metal electrodes remained intact, enabling successful fabrication of field effect transistor (FET) arrays. The effects of enhancing adhesion between graphene and metals were more evident from O2 plasmas than Ar, N2, and H2 plasmas, suggesting that chemical reaction of O radicals induces hydrophilic property of graphene more effectively than chemical reaction of H and N radicals and physical bombardment of Ar ions. From the electrical measurements (drain current vs. gate voltage) of field effect transistors before and after Ar plasma exposure, it was confirmed that the plasma treatment is very effective in controlling bonding properties of graphene to metals accurately without requiring buffer layers.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.43 no.5
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• pp.55-59
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• 2011

Atmospheric plasma technology was utilized in order to modify surface characteristics of base paper for coating. Argon(Ar) and oxygen(O2) gases were used. It was found that contact angle of a water droplet was decreased with increasing voltage during plasma treatment, meaning that the hydrophilicity of paper surface was increased. On the other hand, the physical properties like roughness and optical properties such as gloss, brightness and opacity were not influenced by the plasma treatment. In conclusion, atmospheric plasma technology can be utilized to control hydrophilicity of paper surface without affecting physical properties of the paper.

• ETRI Journal
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• v.38 no.4
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• pp.675-684
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• 2016

This paper demonstrates the effect of fluoride-based plasma treatment on the performance of $Al_2O_3/AlGaN/GaN$ metal-insulator-semiconductor heterostructure field effect transistors (MISHFETs) with a T-shaped gate length of $0.20{\mu}m$. For the fabrication of the MISHFET, an $Al_2O_3$ layer as a gate dielectric was deposited using atomic layer deposition, which greatly decreases the gate leakage current, followed by the deposition of the silicon nitride layer. The silicon nitride layer on the gate foot region was then selectively removed through a reactive ion etching technique using $CF_4$ plasma. The etching process was continued for a longer period of time even after the complete removal of the silicon nitride layer to expose the $Al_2O_3$ gate dielectric layer to the plasma environment. The thickness of the $Al_2O_3$ gate dielectric layer was slowly reduced during the plasma exposure. Through this plasma treatment, the device exhibited a threshold voltage shift of 3.1 V in the positive direction, an increase of 50 mS/mm in trans conductance, a degraded off-state performance and a larger gate leakage current compared with that of the reference device without a plasma treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.172-172
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• 2012

Non-thermal plasma has attracted medical researchers, since they showed higher apoptosis rate in cancer cells than normal cells. However, it is hard to conclude general cancer cell specific effect because comparison between normal and cancer cell activities after plasma treatment have not been reported yet. This research proposes a comparison of Dielectric Barrier Discharge (DBD) plasma effect on three normal cells lines and three cancer cells lines. We measured cell number, mitochondria activity (MTS assay) and amount of hydrogen peroxide (H2O2) for three days. The results show that the number of cancer cells decreased more than normal cells following of exposure time. On the other hand, mitochondria activities and amounts of H2O2 increased following of exposure time. In addition, we found that DBD plasma exposure on cell suspension in media and media only illustrated no difference in mitochondria activity, H2O2 quantity, and cell number. Thus, we can confirm higher apoptosis rate in cancer cells which is related to the reactive oxygen species (ROS) generated by DBD plasma. The related molecular mechanisms were investigated further.