• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1203-1204
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• 2008

본 논문에서는 ICP-CVD(Inductively Coupled Plasma Chemical Vapor Deposition)를 이용해 기판을 가열하지 않고 증착한 $SiO_2$ 절연막의 플라즈마 처리 효과를 분석하였다. 플라즈마 처리를 하지 않은 $SiO_2$ 절연막의 경우 평탄화 전압이 -7.8V, 유효 전하 밀도가 $4.77{\times}10^{13}cm^2$로 열악한 특성을 보였다. 이를 개선하기 위해 헬륨 플라즈마 전처리(Pre-treatment)와 수소 플라즈마 후처리(Post-treatment)를 통해서 $SiO_2$ 절연막의 전기적인 특성을 개선하였다.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.6
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• pp.797-803
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• 2013

In this paper, we fabricated insulator thin films by plasma polymerization method for organic thin film transistor's insulator layer. For improving the electrical characteristics of organic transistor, we treated the semiconductor thin film with $O_2$ plasma. As results, the surface energy of organic transistor was increased from $38mJ/m^2$ to $72mJ/m^2$ and the mobility of organic transistor was increased $0.057cm^2V^{-1}s^{-1}$, that is increased 29% average ratio. Therefore, we have known that oragnic transistor's mobility can improve with plasma treatment of semiconductor thin film's surface.

• Textile Coloration and Finishing
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• v.17 no.5 s.84
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• pp.26-36
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• 2005

This study was carried to evaluate mechanical characteristics of Poly(ethylene terephthalate) fabrics (by Kawabata evaluation system(KES)) which was systematically treated with $O_2$ low temperature plasma and chitosan acetate solution. Furthermore, surface structure was investigated by SEM, AFM, air permeability and wettability. Tensile energy(WT), shear rigidity(G) and surface roughness(MIU) properties calculated by KES-FB have increased with increasing plasma treatment time, while bending rigidity(G) and energy of compression(WC) value were decreased compared with those of the untreated. SEM photographs showed the identification of chitosan coating but did not confirm the plasma etching structure. Air permeability was decreased according to plasma treatment time with increasing concentrations of chitosan. The water absorption rate made rapid progress by chitosan treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.621-624
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• 2002

In this study, outgassing characteristics of MgO films, and the plasma cleaning effects of the deposited MgO films by atmospheric pressure plasma on outgassing rate were compared. The MgO layer was heated up to 350 $^{\circ}C$ and the outgassing characteristics were observed for the heated conditions. As the main impurity species $H_2,\;H_2O,\;N_2,\;CO_2,\;and\;H_2O$ were released from this panel. Impurity species of plasma treatment panel were lower than non-treated panels for the heating temperature

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1682-1684
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• 2004

In this study, the surface properties of PET film were analyzed after plasma surface treatment. After plasma treatment of surface roughness and XPS were evaluated to analyze the chemical property, while the surface potential decay and surface resistivity was measured to analyze the electrical characteristic. When plasma discharge treatment was conducted for less than 10 minutes, the electrical insulating property was found to be improved through evaporation of low molecular weight materials and cleaning of surface. However, when the treatment was conducted for more than 10 minutes, the insulating property was decreased due to excessive discharge energy. Analysis of chemical characteristics showed that 10-minute treatment resulted in increase of C-O and O=C-O. However, when treated for more than 10 minutes, they were relatively decreased.

• Applied Chemistry for Engineering
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• v.9 no.3
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• pp.383-387
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• 1998

The effect of hydrophilic surface modification of low density polyethylene(LDPE) byt the plasma gas($O_2$, $N_2$, and $O_2/N_2$) was investigated from the point of view of the functionalities of the generated LDPE surfaces and the contact angle. By virtue of x-ray photoelectron spectra(XPS) and attenuated total reflectance(FT-IR ATR) analysis, the LDPE surfaces treated with plasma were generated with oxygen functionalities of carbonyl, carboxyl, and the like, nitrogen functionalities by nitrogen plasma and mixing of nitrogen and oxygen plasma treatment were identified with. It was found that nitrogen plasma treatment showed with minimum value at contact angle for rf-power and treatment time, we had obtained optimum condition for hydrophilic surface modification at composite parameter, [(W/FM)t] 520~550GJs/kg.

• Korean Journal of Metals and Materials
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• v.50 no.7
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• pp.545-548
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• 2012

The optical and electronic properties of Indium Tin Oxide (ITO) thin films deposited on a RF-plasma treated glass substrate were investigated by X-Ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS), Reflected Electron Energy Loss Spectroscopy (REELS). The modification of glass substrates was carried out by varying the time of the plasma surface treatment in an oxygen atmosphere. The focus of this research was to examine how the optical and electronic properties of ITO thin films change with the plasma treatment time. The surface energy increased since the carbon bonds were removed from the surface after the glass substrate received the surface treatment. The ITO thin films produced on the glass substrate with surface treatment showed that the high optical transmittance was approximately 85%. The measured band gap energy was as high as 3.23 eV when the plasma treatment time was 60 s and the work function after the treatment was increased by 0.5 eV in comparison to that before the treatment of 60 s. The ITO thin film exhibited an excellent sheet resistance of $2.79{\Omega}/{\Box}$. We found that the optical and electronic properties of ITO thin films can be improved by RF-plasma surface treatment.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.435-438
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• 2004

MOCVD is one of the major deposition techniques for Cu thin films and Ta-Si-N is one of promising barrier metal candidates for Cu with high thermal stability. Effects of hydrogen plasma pretreatment of the underlying Ta-Si-N film surface on the Cu nucleation in Cu MOCVD were investigated using scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron emission spectrometry analyses. Cu nucleation in MOCVD is enhanced as the rf-power and the plasma exposure time are increased in the hydrogen plasma pretreatment. The optimal plasma treatment process condition is the rf-power of 40 Wand the plasma exposure time of 2 min. The hydrogen gas flow rate in the hydrogen plasma pretreatment process does not affect Cu nucleation much. The mechanism through which Cu nucleation is enhanced by the hydrogen plasma pretreatment of the Ta-Si-N film surface is that the nitrogen and oxygen atoms at the Ta-Si-N film surface are effectively removed by the plasma treatment. Consequently the chemical composition was changed from Ta-Si-N(O) into Ta-Si at the Ta-Si-N film surface, which is favorable for Cu nucleation.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.176-176
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• 1999

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.378-383
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• 2001

An out line of the material process with using the atmospheric pressure glow plasma is described as follows : (1) TiO powder coating with SiO$_2$ (2) Surface treatment of Fluorinated polymers and (3) Surface cleaning of electronic circuit board with using splay type.