• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.364.1-364.1
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• 2014

고효율 태양전지로 가기 위해서는 태양전지의 후면 패시베이션은 중요한 역할을 한다. 후면 패시베이션 막으로 사용되는 $Al_2O_3$ 막은 $Al_2O_3/Si$ 계면에서 높은 화학적 패시베이션과 Negative Fixed Charge를 가지고 있어 적합한 Barrier막으로 여겨진다. 하지만 이후에 전면 Metal paste의 소성 공정에 의해 $800^{\circ}C$이상 온도를 올려주게 됨에 따라 $Al_2O_3$ 막 내부에 결합되어 있던 수소들이 방출되어 blister가 생성되고 막 질은 떨어지게 된다. 우리는 blister가 생성되는 것을 방지하기 위한 방법으로 PECVD 장비로 SiNx를 증착하는 공정 중에 $N_2O$ 가스를 첨가하여 SiON 막을 증착하였다. SiON막은 $N_2O$가스량을 조절하여 막의 특성을 변화시키고 변화에 따라 소성시 막에 미치는 영향에 대하여 조사하였다. 공정을 위해 $156{\times}156mm2$, $200{\mu}m$, $0.5-3.0{\Omega}{\cdot}cm$ and p-type 단결정 실리콘 웨이퍼를 사용하였고, $Al_2O_3$ 막을 올리기 전에 RCA Cleaning 실행하였다. ALD 장비를 통해 $Al_2O_3$ 막을 10nm 증착하였고 RF-PECVD 장비로 SiNx막과 SiON막을 80nm 증착하였다. 소성로에서 $850^{\circ}C$ ($680^{\circ}C$) 5초동안 소성하고 QSSPC를 통해 유효 반송자 수명을 알아보았다.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.985-994
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• 1996

The initiation and growth of $\alpha$-Al2O3/metal composites by the directed oxidation of molten commercial AlZnMg-alloy at 1223-1423K were investigated. Spontaneous bulk growth did not occur on the alloy alone. but the uniform initiation and growth of the composite were obtained by putting a thin layer of SiO2 particles on the surface of the alloy. Without SiO2 the external surface of the oxide layer was convered by MgO and MgAl2O4. But with the SiO2 reaction initiate the porous ZnO layers were found on the growth surface. The higher process temperature yielded a lower metal content. The oxidation product of $\alpha$-Al2O3 was found to be oriented with c-axis parallel to th growth direction. The growth rates increased with temperature and the apparent activation energy was 111.8 kJ/mol.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.647-651
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• 2007

In order to investigate the excited-state intramolecular proton transfer (ESIPT) process of dihydroxyanthraquinones (DHAQ; 1,5-DHAQ and 1,8-DHAQ) in organic-inorganic hybrid matrices, transparent SiO2, SiO2- Al2O3, and Al2O3 matrices chemically bonded with DHAQ were prepared using a sol-gel technique. The absorption maxima of 1,5- and 1,8-DHAQ in SiO2 matrices are observed at around 420 nm, whereas those of DHAQ in both SiO2-Al2O3 and Al2O3 matrices are markedly shifted to longer wavelength compared with those in SiO2 matrix. This indicates that DAHQ forms a chemical bond with an Al atom of Al2O3. The DHAQ in SiO2 matrix shows a markedly Stokes-shifted emission which is originated from the ESIPT in DHAQ. Based on the emission lifetimes of DHAQ, the ESIPT of DHAQ was found to be strongly affected by the chemical interaction with Al atom in the Al2O3-related matrices.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.359-367
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• 2000

Particulate composites of Al2O3/SiC, Al2O3/ZrO2 and Al2O3/ZrO2/SiC have been fabricated to investigate their R-curve behaviors and toughening mechanisms. Al2O3 containing 30 vol% SiC particles of 3${\mu}{\textrm}{m}$ showed rising R-curve behavior owing to the strong crack bridging by SiC particles. The fracture toughness reached 9.1 MPa {{{{ SQRT {m} }} at the crack length of 1000${\mu}{\textrm}{m}$. On the other hand, ZrO2-toughened Al2O3 had a high flat R-curve since it rose steeply in the short crack region due to the well known transformation toughening. For Al2O3/ZrO2/SiC composites, the R-curve behavior was similar to that of Al2O3/SiC but with slightly higher toughness. The SiC particles in this composite decreased the amount of transformable tetragonal phase to reduce the effect of transformation toughening by 50%. It was also found that the fracture toughness of this composite with two different toughening mechanisms was markedly lower than that estimated by the simple addition of two contributions.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.483-490
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• 1997

Al2O3/metal composites were fabricated by oxidation and reaction of molten Al-alloy into two types of commercial Al2O3-SiO2 fibrous insulation board. The growth rate, composition and microstructure of these materials were described. An AlZnMg(7075) alloy was selected as a parent alloy. Mixed polycrystalline fiber and glass phase fiber were used as a filler. The growth surface of an alloy was covered with and without SiO2. SiO2 powder was employed as a surface dopant to aid initial oxidation of Al-alloy. Al-alloy, SiO2, fiber block and growth inhibitor CaSiO3 were packed sequentially in a alumina crucible and oxidized in air at temperature range 90$0^{\circ}C$ to 120$0^{\circ}C$. The growth rate of composite layer was calculated by measuring the mass increasement(g) per unit surface($\textrm{cm}^2$). XRD and optical microscope were used to investigate the composition and phase of composites. The composite grown at 120$0^{\circ}C$ and with SiO2 dopant showed rapid growth rate. The growth behavior differed a little depending on the types of fiber used. The composites consist of $\alpha$-Al2O3, Al, Si and pore. The composite grown at 100$0^{\circ}C$ exhibited better microstructure compared to that grown at 120$0^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.625-625
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• 1991

The specimens for the corrosion test were made by hot-pressing of SiC power with 2 wt% Nl2O3 and 10wt% Al2O3 additions at 2000℃ and 2050℃. The specimens were corroded in 37 mole% NaCl and 63 mole% Na2SO4 salt mixture at 1000℃ up to 60 min. SiO2 layer was formed on SiC and then this oxide layer was dissolved by Na2O ion in the salt mixture. The rate of corrosion of the specimen containing 10 wt% Al2O3 was slower than that of the specimen containing 2 wt% Al2O3. This is due to the presence of continuous grain boundary phase in the specimen containing 10 wt% Al2O3. The oxidation of SiC produced gas bubbles at the SiC-SiO2 interface. The rate of corrosion follows a linear rate law up to 50 min. and then was accelerated. This acceleration is due to the disruption oxide layer by the gas evolution at SiC-SiO2 interface. Pitting corrosion has found at open pores and grain boundaries.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.219-224
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• 2017

The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.658-664
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• 1997

The effect of metal oxides($K_2O, MgO, CaO,Al_2O_3$, and $TiO_2$) on the kinds of pure $SiO_2$ phase, and $SiO_2$ phases in the composition of vitreous porcelain body was investigated. Also, the effect of the ratio $SiO_2$ to $Al_2O_3$ in the composition of porcelain body with stabilized of cristobalite phase was investigated. In the case of the addition of $K_2O, MgO, CaO, Al_2O_3$, and $TiO_2$ to pure $SiO_2$, the major phase was $\alpha$-cristobalite, $\alpha$-cristobalite, $\alpha$-quartz, $\alpha$-quartz and amorphous, respectively. As the ratio of $SiO_2$ to $Al_2O_3$ in the composition of porcelain body was decreased, the stabilization of cristobalite phase was promoted and only the critical value of $SiO_2/Al_2O_3$ ratio that stabilizing the cristobalite phase in it was 68.10/22.75. The addition of $K_2$O, MgO, CaO,Al_2O_3$, and $TiO_2$ to the composition of porcelain body stabilized already did not affect on the formation of $\alpha$-cristobalite phase which degraded the thermal properties of porcelain body, and suppressed the formation of a, $\beta$-cristobalite.

• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.123-130
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• 1993

Dispersed type Al2O3-SiC composite powders were synthesized from Al-isopropoxide (Al(i-OC3H7)3) and Si(OC2H5)4 precursors by hydrolysis of mixed alkoxides and carbothermal reaction method. The characteristics of the synthesized (dispersed type) Al2O3-SiC composite powders were investigated using XRD, SEM, TEM, BET and particle size analyzer. Carbothermal reaction to produce Al2O3-SiC composite was completed in 10h at 135$0^{\circ}C$ on 3~4㎤/s (0.21~0.28cm/s) of H2 flow rate and about 1/1 of carbon/oxides(=SiO2＋Al2O3) molar ratio. The synthesized powders were observed to have the mean particle size range of 0.4~1.26${\mu}{\textrm}{m}$ and showed finer particle size with increasing SiC content.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.6
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• pp.886-894
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• 1990

Sinterbility, microstructure, mechenical and electrical properties of yttriastabilized zirkconiz (92 mole % ZrO2 + 8 mole % Y2O3) doped with 0.5 mole % SiO2 and 0-2.O mole% Al2O3 were studied as a functin of Al2O3 addition. Sintered density increased with increasing Al2O3 addition up to o.5 mole%but decreased up to 1.0mole% Al2O3. Vickers hardness is proportional to sintered density. The specimen added 0.5mole% Al2O3 and 0.5mole% SiO2 exhibited a maximum conductivity. And the specimen added 0.5 mole % Al2O3 and 0.5 mole% SiO2 was measured a maximum electromotive force for a characteristics of oxyzen partial pressure.