• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.377-380
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• 2008

In this work, we measured the spatiotemporal surface charge distribution by the longitudinal electro-optic amplitude modulation method with BSO single crystal to investigate the decay and diffusion characteristics of surface charges in three types of MgO. The speed of decay and diffusion of two different kinds doped MgO is compared with those of pure MgO. The difference in the characteristics of the decay and diffusion between the electron and ion surface charges is investigated separately. We found that the rate of ion decay is the major factor that makes the difference of the temporal variation of wall voltage among different types doped MgO.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.76-76
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• 2010

The interaction of hydrogen (H) and ZnO surfaces has been investigated using a temperature programmed desorption (TPD) technique. When the surface is exposed to atomic hydrogen below 400 K, hydrogen is adsorbed on the surface. As the hydrogen exposure increases, bulk diffusion of hydrogen takes place. The existence of surface and bulk hydrogen has been confirmed using X-ray photoelectron spectroscopy (XPS). When the ZnO(000-1) surface dosed with hydrogen is heated, surface hydrogen is desorbed at 432 K and bulk hydrogen is evolved at ~539 K. Diffusion of hydrogen into the ZnO bulk is an activated process, and the activation energy is estimated to be 0.19 eV. Diffusion of hydrogen on the ZnO(10-10) surface is also investigated.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1459-1466
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• 1994

A novel technique for determining the oxygen tracer diffusion coefficients in oxides was developed. After the 16O-18O solid-gas exchange reactions between 16O in the oxides and 18O in the ambient gas, Raman spectra of the cross sections of oxide samples were measured in a spatial resolution of 5 ${\mu}{\textrm}{m}$. From thus obtained Raman spectra, depth profiles of 18O concentration in the oxide samples were calculated. The oxygen tracer diffusion coefficients and the surface exchange coefficients were determined under the assumptions that samples are semi-infinite slab and that the surface exchange reactionsare not negligible. The oxygen tracer diffusion coefficient of 2.8 mol% Y2O3-containing tetragonal ZrO2 polycrystals, 8 mol% Y2O3-containing ZrO2 polycrystals, and 10 mol% Y2O3-containing cubic ZrO2 single crystals (along the a axis) are as follows.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.372-375
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• 2017

ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.2
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• pp.248-253
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• 1987

Boron diffusion into silicon through poly\ulcorneri-SiO2 was carried out for the diffusion with low concentration using CVD-BN. The result of direct boron diffusion from BN into silicon and that of boron diffusion through SiO2 from BN into silicon was compared with the result of boron diffusion through poly-Si-SiO2 from BN into silicon. In the case of boron diffusion through poly Si-SiO2, the low concentration diffusion was obtained, that is the boron surface concentration in silicon Cs=10**16 Cm**-3, and the glassy compounds were not seen.

• Journal of the Korean institute of surface engineering
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• v.24 no.3
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• pp.144-150
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• 1991

The stainless steel 304 oxidized at $70^{\circ}C$ in 2.5M CrO3/5.0M H2SO4 solution and at $200^{\circ}C$ , $300^{\circ}C$, and $400^{\circ}C$ in the air are analyzed with X-ray Photoelectron Spectroscopy (XPS) to obtain depth composition profile of the surface region. It is confirmed that the surface region has a quite different composition from that of the bulk. This is due to a difference in the outward diffusion rates of the oxidized species in the surface region. The order of diffusion rates is Fe > Cr > Ni in the experimental temperature range. In spite of the inferior rate of diffusion, Cr is enriched in the surface when it is oxidized in the CrO3/H2SO4 solution. This is due to preferential dissolution of oxidized Fe.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.117-117
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• 2014

Thin $ZrO_2/Al_2O_3$ films were deposited on a tool steel substrate using Zr and Al cathodes in a cathodic arc plasma deposition system (CAPD), and then oxidized at $600-900^{\circ}C$ in air for up to 50 h. They effectively suppressed the oxidation of the substrate up to $800^{\circ}C$ by acting as a barrier layer against the outward diffusion of the substrate elements and inward diffusion of oxygen. However, rapid oxidation occurred at $900^{\circ}C$ due mainly to the increased diffusion and subsequent oxidation of steel as well as the crystallization of amorphous $Al_2O__3$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.394-394
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• 2012

We fabricated organic-inorganic superlattice films using molecular layer deposition (MLD) and atomic layer deposition (ALD). The MLD is a gas phase process in the vacuum like to atomic layer deposition (ALD) and also relies on a self-terminating surface reaction of organic precursor which results in the formation of a monolayer in each sequence. In the MLD process, 'Alucone' is very famous organic thin film fabricated using MLD. Alucone layers were grown by repeated sequential surface reactions of trimethylaluminum and ethylene glycol at substrate temperature of $80^{\circ}C$. In addition, we developed UV-assisted $Al_2O_3$ with gas diffusion barrier property better than typical $Al_2O_3$. The UV light was very effective to obtain defect-free, high quality $Al_2O_3$ thin film which is determined by water vapor transmission rate (WVTR). Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of each organic, inorganic film. Composition of the organic films was confirmed by infrared (IR) spectroscopy. Ultra-violet (UV) spectroscopy was employed to measure transparency of the organic-inorganic superlattice films. WVTR is calculated by Ca test. Organic-inorganic superlattice films using UV-assisted $Al_2O_3$ and alucone have possible use in gas diffusion barrier for OLED.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.461-465
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• 2021

A diffusion heat treatment process for YBa₂Cu₃O_7-y bulk superconductor in a Gd₂O₃ powder was attempted. As a result of measuring the critical temperature of the superconducting bulk, there was no change in the superconducting transition temperature as the Gd particles diffused into the YBa₂Cu₃O_7-y lattice, resulting in dense microstructure. As a result of measuring the critical current, the critical current density (J_c) of the superconducting bulk having treated by the Gd thermal diffusion treatment at 0 T increased to 3×10⁴ A/cm² at 0 T, which was higher than that of the superconducting bulk without thermal diffusion treatment. The surface magnetic force of the superconducting bulk with Gd thermal diffusion treatment was observed at the center of the superconducting bulk with the maximum trapped magnetic force (Hmax) of 1.51 kG. This result means that the Gd thermal diffusion treatment contributes to improving the critical current density Jc of YBa₂Cu₃O_7-y, and it is believed that Gd particles migrating into the superconducting bulk through thermal diffusion either fill the surface pores of YBa₂Cu₃O_7-y superconductors or act as a flux pinning center.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.99-107
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• 2003

The diffusion coefficient of Xe-133 was obtained from an annealing test. The specimens were made from a UO$_2$ single crystal powder with natural enrichment. Weight and grain size were 300mg and ($23\mu\textrm{m}$, respectively. Oxygen potentials were obtained from an oxygen sensor. Released fractions were obtained from both results of gamma scans and quantitative analysis with MCNP code, The annealing test was performed at three temperatures at once. Diffusion coefficients of Xe-133 were calculated using slope of Booth theory in each O/M ratios. Activation energy and the pre-exponential factor of the diffusion coefficient were obtained. The activation energy of near stoichiomeric $UO_2$ is 310 kJ/mol. The measured values of near stoichiometric $UO_2$ are very close to other data available. Diffusion coefficients increase with hyper-stoichiometry, due to higher concentration of cation vacancies.