• Journal of Sensor Science and Technology
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• v.18 no.1
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• pp.54-62
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• 2009

${Co_3}{O_4}$ and ${Co_3}{O_4}$-based thick films with additives such as ${Co_3}{O_4}-{Fe_2}{O_3}$(5 wt.%), ${Co_3}{O_4}-{SnO_2}$ (5 wt.%), ${Co_3}{O_4}-{WO_3}$(5 wt.%) and ${Co_3}{O_4}$-ZnO(5 wt.%) were fabricated by screen printing method on alumina substrates. Their structural properties were examined by XRD and SEM. The sensitivities to iso-${C_4}H_{10}$, $CH_4$, CO, $NH_3$ and NO gases were investigated with the thick films heat treated at $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$. From the gas sensing properties of the films, the films showed p-type semiconductor behaviors. ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film heat treated at $600^{\circ}C$ showed higher sensitivity to i-${C_4}H_{10}$ and CO gases than other thick-films. ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film heat treated at $600^{\circ}C$ showed the sensitivity of 170 % to 3000 ppm iso-${C_4}H_{10}$ gas and 100 % to 100 ppm CO gas at the working temperature of $250^{\circ}C$. The response time to i-${C_4}H_{10}$ and CO gases showed rise time of about 10 seconds and fall time of about $3{\sim}4$ minutes. The selectivity to i-${C_4}H_{10}$ and CO gases was enhanced in the ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.493-498
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• 2002

$Al_2O_3$ is a promising gate dielectric because of its high dielectric constant, high resistivity and low leakage current. Since $OH^-$ radical in $Al_2O_3$ films deposited by ALD using TMA and $H_2O$ degrades the good properties of $Al_2O_3$, TMA and $O_3$ were used to deposite $Al_2O_3$ films and the effects of $O_3$ on the properties of the $Al_2O_3$ films were investigated. The growth rate of the $Al_2O_3$ film under the optimum condition was 0.85 $\AA$/cycle. According to the XPS analysis results the $OH^-$ concentration in the $Al_2O_3$ film deposited using $O_3$ is lower than that using $H_2O$. RBS analysis results indicate the chemical formula of the film is $Al_{2.2}O_{2.8}$. The carbon concentration in the film detected by AES is under 1 at%. SEM observation confirms that the step coverage of the $Al_2O_3$ film deposited by ALD using $O_3$ is nearly 100%.

• Journal of the Korean Society of Safety
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• v.20 no.4 s.72
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• pp.29-33
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• 2005

In this paper, reflectance and the dielectric characteristics for $P_2O_5-ZnO-BaO$ system and $SiO_2-ZnO-B_2O_3$ system have been investigated as a function of contents of $TiO_2$. The reflectance was decreased with increasing the contents of $TiO_2$ and the reflectance of $P_2O_5-ZnO-BaO$ system was lowered than that of $SiO_2-ZnO-B_2O_3$ system. The dielectric constant of $P_2O_5-ZnO-BaO$ system was higher than $SiO_2-ZnO-B_2O_3$ system, and the dielectric constant in the both system was increased with increasing of $TiO_2$ contents. This can be explained as the space charge effects. These results are could be applied to the under plate dielectrics of PDP required high reflective ratio and breakdown strength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.493-501
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• 2000

The microstructure and electrical properties of ZnO-Pr$_{6}$/O$_{11}$-CoO-Er$_{2}$/O$_{3}$ based varistors were investigated with Er$_{2}$/O$_{3}$ additive content of the range 0.0 to 2.0 mol%. Most of the added Er$_{2}$/O$_{3}$ were segregated at the nodal points and grain boundaries and it coexisted with Pr$_{6}$/O$_{11}$ in the bulk intergranular layer. The average grain size was decreased in the range of 7.44 to 5.62${\mu}{\textrm}{m}$ at 130$0^{\circ}C$ and 18.36 to 9.11 at 135$0^{\circ}C$ with increasing Er$_{2}$/O sub 3/ additive content. The density of ceramics was in the range 4.87 to 5.08 g/cm$^3$ at 130$0^{\circ}C$ and 5.35 to 5.62 g/cm$^3$at 135$0^{\circ}C$. At 130$0^{\circ}C$ the varistors without Er$_{2}$/O$_{3}$ exhibited 29.66 in the nonlinear exponent and 28.23 $\mu$A in the leakage current whereas the varistors with 0.5 mol% Er$_{2}$/O$_{3}$ exhibited a high nonlinearity which is 52.78 in thenonlinear exhibited and 9.75 $\mu$A in the leakage current. At 135$0^{\circ}C$ the varistors without Er$_{2}$/O$_{3}$ exhibited a very poor nonlinearity indicating 2.08 in the nonlinear exponent and 133.79 $\mu$A in the leakage current whereas the varistors with 1.0mol% Er$_{2}$/O$_{3}$ exhibited a relatively high nonlinearity which is 36.79 in the nonlinear exponent and 5.92 $\mu$A in the leakage current. Therefore Er$_{2}$/O$_{3}$ was additive which greatly improve the nonlinearity. It is believed that ZnO-0.5 mol% Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Er$_{2}$/O$_{3}$ based ceramicss will be usefully used as a basic composition to develop the advanced pr$_{6}$/O$_{11}$-based ZnO varistors.ristors.ristors.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.29.1-29.1
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.139-142
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• 2003

Microwave dielectric properties of $Ca(Li_{1/4}Nb_{3/4})O_3-CaTiO_3$ ceramic systems were investigated with calcination temperatures and amounts of $CaTiO_3$ in the range of 0.2 to 0.4mol. $Ca(Li_{1/4}Nb_{3/4})O_3$ ceramics having orthorhombic crystal structure could be synthesized at $750^{\circ}C$ and sintered well at $1250^{\circ}C$. They showed the dielectric constant of 26, quality factor($Q{\times}f_o$) of 13,000 and temperature coefficient of resonant frequency(${\tau}_f$) of $-49{\pm}2ppm/^{\circ}C$ With adding the $CaTiO_3$ amount the dielectric constant and ${\tau}_f$ increased due to the solute of $CaTiO_3$ but the quality factor decreased. The 0.7$Ca(Li_{1/4}Nb_{3/4})O_3-0.3CaTiO_3$ ceramic showed the dielectric constant of 44, quality factor($Q{\times}f_o$) of 12,000 and ${\tau}_f$ of $-9{\pm}1ppm/^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.516-522
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of$Al_2O_3+Y_2O_3$ Phase analysis of composites by XRD revealed $\alpha-SiC(6H) ZrB_2\; and YAG(Al_5Y_3O_{12})$ The relative density of composites were increased with increased Al2O3+Y2O3 contents. The Flexural strength showed the highest value of 390.6MPa for composites added with 20wt% Al2O3+Y2O3 additives at room temperature. Owing to crack deflection crack bridging phase transition and YAG of fracture toughness mechanism the fracture toughness showed the highest value of 6.3MPa.m1/2 for composites added with 24wt% Al2O3+Y2O3 additives at room temperature. The resistance temperature coefficient showed the value of$ 2.46\times10^{-3}\;, 2.47\times10^{-3},\; 2.52\times10^{-3}/^{\circ}C$ for composite added with 16, 20, 24wt% Al2O3+Y2O3 additives respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $256{\circ}C\; to\; 900^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1266-1273
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• 1998

Al2O3/(5~20vol%)LaAl11O18 composites in which the second phase was dispersed with a elongated grain shape were fabricated using Al2O3 and La2O3 composition by hot-pressing. In order investigate the in-fluence of LaAl11O18 on the toughening of LaAl11O18 on the toughening of Al2O3 matrix composites AE(acoustic emission) analysis was con-ducted together with an evaluation of fracture toughness using of SEPB technique. The degree of AE events occurred in composites were more than those in monolithic alumina. The occurrences of AE event increased with increasing the amount of LaAl11O18 phase in the Al2O3/LaAl11O18 composite is two times higher compared to monolithic alu-mina. The main toughening mechanism was attributed to the bridging of LaAl11O18 grains at tip of pro-pagating crack.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1097-1098
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• 2006

The Powder characteristics and sintering behavior of $SiO_2$ coated $BaTiO_3$ were studied. Silica coated $BaTiO_3$ powders were prepared by sol-gel method. The particle size of the $BaTiO_3$ powders were $\sim35$ nm and the thickness of the $SiO_2$ coating layer was $\sim5$ nm. As the $SiO_2$ content increased, the $SiO_2$ layers improved the powder dispersion. The Zeta potential of $SiO_2$ coated $BaTiO_3$ was getting close to that of pure silica with a more negative charge, compared with that of the uncoated $BaTiO_3$. The onset temperature of shrinkage curves shifted to higher temperatures with increasing $SiO_2$ contents

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.897-901
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• 2003

The microstructure and varistor characteristics of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Dy$_2$O$_3$(ZPCCD)-based ceramics were investigated with Dy$_2$O$_3$ content in the range of 0.0∼2.0 mol%. As Dy$_2$O$_3$ content is increased, the average grain size was decreased in the range of 18.6∼4.7 $\mu$m and the density was decreased in the range of 5.53∼4.34 g/cm$^3$. While, the varistor voltage was increased in the range of 39.4∼436.6 V/mm and the nonlinear exponent was in the range of 4.5-66.6 with increasing Dy$_2$O$_3$ content. The addition of Dy$_2$O$_3$ highly enhanced the nonlinear properties of varistors, compared with the ceramics without Dy$_2$O$_3$ Particularly, the ceramics with Dy$_2$O$_3$ content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 66.6 and the leakage current is 1.2 $\mu$A.A.A.