• 대한화학회지
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• 제40권6호
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• pp.427-435
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• 1996

$Ca^{2+}$ 이온과 $Cs^+$ 이온으로 치환되고 완전히 탈수된 제올라이트 X, $Ca_{35}Cs_{22}Si_{100}Al_{92}O_{384}$($Ca_{35}Cs_{22}$-X; a=25.071(1) $\AA)와Ca_{29}Cs_{34}Si_{100}Al_{92}O_{384}$($Ca_{29}Cs_{34}$-X; a=24.949(1) $\AA)$의 두 개의 결정 구조를 $21^{\circ}C$에서 입방공간군 Fd3을 사용하여 단결정 X-선 회절법으로 해석하고 구조를 정밀화하였다. 탈수한 $Ca_{35}Cs_{22}$-X의 구조를 Full-matrix 최소자승법 정밀화 계산에서 $I>3\sigma(I)$인 322개의 독립 반사를 사용하여 최종 오차 인자를 $R_1$=0.051, $R_2$=0.044까지 정밀화 계산하였고, 탈수한 $Ca_{35}Cs_{22}$-X의 구조는 260개의 독립 반사를 사용하여 $R_1$=0.058, $R_2$=0.055까지 정밀화시켰다. 이들 구조에서 $Ca^{2+}$ 이온과 $Cs^+$ 이온은 서로 다른 5개의 결정학적 자리에 위치하고 있다. 탈수한 $Ca_{35}Cs_{22}$-X 구조에서는 16개의 $Ca^{2+}$ 이온은 D6R의 중심, 자리 I에 모두 채워져 있다(Ca-O=2.41(1) $\AA$, $O-Ca-O=93.4(3)^{\circ}).$ 다른 19개의 $Ca^{2+}$ 이온은 자리 II에 (Ca-O=2.29(1) $\AA$, $O-Ca-O=118.7(4)^{\circ})$, 10개의 $Cs^+$ 이온은 큰 공동에서 6-링 맞은편 II에 채워져 있고, 각각 3개의 산소로 만들어지는 산소 평면으로부터 $1.95\AA$ 들어가 위치하고 $있다(Cs-O=2.99(1)\AA$, $O-Cs-O=82.3(3)^{\circ}).$ 3개의 $Cs^+$ 이온은 산소 평면에서 소다라이트 공동쪽으로 $2.27\AA$ 들어간 자리 II'에서 위치하고 $있다(Cs-O=3.23\AA$, $O-Cs-O=75.2(3)^{\circ}).$ 나머지 9개의 $Cs^+$ 이온은 각각 큰 공동내 2회 회전축을 가지고 있는 48(f) 위치인 자리 III에 통계학적으로 분포하고 $있다(Cs-O=3.25(1)\AA$, Cs-O=3.49(1) $\AA).$ 탈수한 $Ca_{29}Cs_{34}$-X에서 16개의 $Ca^{2+}$ 이온은 자리 I에 채워지고 (Ca-O=2.38(1) $\AA$, $O-Ca-O=94.1(4)^{\circ})$ 13개의 $Ca^{2+}$ 이온은 자리 II에 채워져 있다(Ca-O=2.32(2) $\AA$, $O-Ca-O=119.7(6)^{\circ}).$ 다른 12개의 $Cs^+$ 이온은 자리 II에 채워져 있고, 이들은 산소 평면으로부터 각각 $1.93\AA$ 들어가 위치하고 $있다(Cs-O=3.02(1)\AA$, $O-Cs-O=83.1(4)^{\circ}).$ 7개의 $Cs^+$ 이온은 각각 자리 II'에 위치하고 있고, 산소 평면으로부터 소다라이트 공동으로 $2.22\AA$ 들어가 위치하고 있다(Cs-O=3.21(2) $\AA$, $O-Cs-O=77.2(4)^{\circ}).$ 나머지 16개의 $Cs^+$ 이온은 큰 공동내의 자리 III에 있다(Cs-O=3.11(1) $\AA$, Cs-O=3.46(2) $\AA).Ca^{2+}$ 이온은 자리 I과 자리 II에 우선적으로 위치하고 $Cs^+$ 이온은 너무 커서 자리 I에 채워질 수 없으며 나머지 자리에 채워진다.

• 한국세라믹학회지
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• 제24권3호
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• pp.270-276
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• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1095-1096
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• 2006

When $Y_2O_3$ was added to Ti-excess $BaTiO_3$ ((Ba+Y)/Ti =1), the area occupied by $Y^{3+}$ ion was confirmed by its microstructure development, electrical conductivity behavior and lattice constant. Grain growth inhibition was observed when the content of donor dopant exceeded a critical value ($x{\approx}.0.01$) in $BaTiO_3+x(0.5Y_2O_3+TiO_2)$ system. A donor-doped behavior was observed at various Y contents ($0.2\sim3.0$ mol% Y) when $Y_2O_3$ was added to $TiO_2$-excess $BaTiO_3$. As Y content was increased, (002) and (200) peaks shifted to higher angles and the lattice constant (a and c axis) decreased gradually.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.68-70
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• 1990

(1-X)(Sr$\_$7/9/Pb$\_$2/9/)$\_$(1-y)/(Ca$\_$1/5/Mg$\_$4/5/)$\_$y/TiO$_3$+X(BiO$_2$O$_3$$.$3TiO$_2$) (y=0.145, 0$\leq$X$\leq$0.08) ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1180∼1230[$^{\circ}C$], 2[hr], respectly. The grain size were grown with increasing the contents of Bi$_2$O$_3$$.$3TiO$_2$, but decreased more and less in the specimens which had more than 0.04[mol].

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.969-976
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• 2011

In this study we aims to evaluate the effects of 1/3 mol% $Co_3O_4$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0, and 0.5) system (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. In addition of $Co_3O_4$ in $ZnO-Bi_2O_3-Sb_2O_3$ (ZBSCo), the phase development, density, and microstructure were controlled by Sb/Bi ratio. Pyrochlore on cooling was reproduced in all systems. The more homogeneous microstructure was obtained in ZBSCo (Sb/Bi=1.0) system. In ZBSCo, the varistor characteristics were improved drastically (non-linear coefficient ${\alpha}$=23~50) compared to ZBS. Doping of $Co_3O_4$ to ZBS seemed to form $V^{\cdot}_o$(0.33 eV) as dominant defect. From IS & MS, especially the grain boundary of Sb/Bi=0.5 system is composed of electrically single barrier (0.93 eV) and somewhat sensitive to ambient oxygen with temperature.

• 대한전자공학회논문지TE
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• 제39권1호
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• pp.1-8
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• 2002

단사정 ZrO/sub 2/(ZrO2(m)) 또는 Y/sub 2/O/sub 3/를 5.35wt% 첨가한 정방정 ZrO2(ZrO/sub 2/(t))를 A1/sub 2/O/sub 3/에 첨가하여 물리적 및 전기전도도의 영향을 연구하였다. ZrO/sub 2/(m)과 ZrO/sub 2/(t)의 첨가는 A1/sub 2/O/sub 3/의 소결밀도를 증가 시켰다. ZrO2(t)의 첨가함에 따라 비커스 경도 또한 증가했으며, 그 량이 20wt%에서 최대가 되었다. 시편의 경도는 소결밀도에 의존함을 알 수 있었다. A1/sub 2/O/sub 3/-ZrO/sub 2/계의 경도는 ZrO/sub 2/(t)의 첨가에 의해 개선 되었고, ZrO/sub 2/(m)의 첨가가 ZrO/sub 2/(t)의 첨가보다 A1/sub 2/O/sub 3/-ZrO/sub 2/계의 열충격 특성에는 더 많은 영향을 받음을 알 수 있었다. l5wt% 이상의 ZrO/sub 2/(t) 첨가에서 인가전압이 증가 함에 따라 점차로 전기전도도가 증가 하였으나, ZrO/sub 2/(m)의 첨가에서는 영향이 없었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.402-405
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• 2001

The BaTiO$_3$+10wt%Nb$_2$O$_{5}$ ceramics were prepared by conventional mixed oxide method. The structural and dielectric properties of the BaTiO$_3$+10wt%Nb$_2$O$_{5}$ ceramics with the sintering temperature were investigated. Increasing the sintering temperature, the 2$\theta$ value of BaTiO$_3$peaks were shifted to the higher degree and intensity of the BaTiO$_3$and BaNbO$_3$peaks were increased. In the BaTiO$_3$+10wt%Nb$_2$O$_{5}$ ceramics sintered at 135$0^{\circ}C$ and 1375$^{\circ}C$, the grain was fine and uniform. Increasing the sintering temperature, the pore was decreased and the dielectric constant was increased. In the BaTiO$_3$+10wt%Nb$_2$O$_{5}$ ceramics sintered at 1375$^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.ctively.

• 한국결정성장학회지
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• 제11권4호
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• pp.170-175
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• 2001

It was possible to grow the $Al_{2}O_{3}$ based $Y_{3}A_{5}O_{12}(YAG),ZrO_{2}$ binary and ternary eutectic fibers using micro-pulling down method with a growing rate of 0.1~15 mm/min. While $Al_{2}O_{3}/ZrO_{2}$ showed cellular-lamellar structure, $Al_{2}O_{3}$/YAG and $Al_{2}O_{3}$/YAG/$ZrO_{2}$ternary eutectic fibers showed homogeneous Chinese script lamellar structures. The microstructures of $Al_{2}O_{3}/ZrO_{2}$ binary eutectic fibers changed with solidification rate from lamellar pattern to cellular structure. The interlamellar spacing agreed with the inverse-square-root dependance on pulling rate according to $\lambda$=$kv_p\;{-1/2}$. $Al_{2}O_{3}/ZrO_{2}$ binary eutectic fibers recorded the highest tensile strength of about 1560MPa at room temperature. $Al_2O_3/YAG/ZrO_2$ternary eutectic fiber showed excellent thermal stability to $1200^{\circ}C$ without significant decrease. The maximum strength of ternary eutectic fibers recorded were 1100MPa at $25^{\circ}C$ and 970MPa at $1200^{\circ}C$, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.343-343
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• 2014

We reported on the electrical, optical, structural and morphological properties fabricated by co-sputtering for use as an anode for organic solar cells (OSCs). By adjusting RF and DC power of $MoO_3$ and IZO targets during co-sputtering, we fabricated the $MoO_3$-IZO electrode with graded content of the $MoO_3$ on the IZO films. At optimized $MoO_3$ thickness of 20 nm, the $MoO_3$ graded IZO electrode showed a higher mobility ($33cm^2/V-Sec$) than directly deposited $MoO_3$ on IZO film ($26cm^2/V-Sec$). At visible range (400nm~800nm), optical transmittance of the $MoO_3$ graded IZO electrode is higher than that of directly deposited $MoO_3$ on IZO film. High mobility of $MoO_3$ graded on IZO is attributed to less interface scattering between $MoO_3$ and IZO. To investigate the feasibility of $MoO_3$ graded IZO films, we fabricated conventional P3HT:PCBM based OSCs with $MoO_3$ graded IZO as a function of MoO3 thickness. The OSC fabricated on the $MoO_3$ graded IZO anode showed a fill factor of 66.53%, a short circuit current of $8.121mA/cm^2$, an open circuit voltage of 0.592 V, and a power conversion efficiency of 3.2% comparable to OSC fabricated on ITO anode and higher than directly deposited $MoO_3$ on IZO film. We suggested possible mechanism to explain the high performance of OSCs with a $MoO_3$ graded IZO.

• 자연과학논문집
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• 제14권2호
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• pp.41-54
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• 2004

$LaMnO_3$(a=$5.51\AA$, c=$13.33\AA$) 페로브스카이트형 복합산화물에서 A site인 La자리에 Sr을 치환시킨 $La_{0.9}Sr_{0.1}MnO_3$(a=$5.33\AA$, c=$13.27\AA$)와 B site인 Mn을 Cu로 치환시킨 $LaMn_{0.9}Cu_{0.1}O_3$(a=$5.52\AA$, c=$13.31\AA$) 복합산화물을 Citrate sol-gel법을 이용하여 합성하였으며 분말 X-ray회절 분석기(XRD)을 이용하여 Rhombohedral의 페로브스카이트 구조임을 확인하였다. 수소 환원분위기에서의 TRR결과에 의하면 이들 산화물의 산소 화학양론은 $LaMnO_{3.16}$, $La_{0.9}Sr_{0.1}MnO_{3.10}$, $LaMn_{0.9}Cu_{0.1}O_{3.14}$의 조성을 갖는다. $LaMnO_3$는 2단계 환원반응을 일으키지만 각 자리를 치환시킨 $LaMnO_3$ 복합산화물은 3단계 환원반응을 일으켰다.