• 한국전기전자재료학회논문지
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• 제25권6호
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• pp.435-438
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• 2012

As lead-free piezoelectric materials, $Ag_2O$ doped $0.95(K_{0.5}Na_{0.5})NbO_3-0.05LiNbO_3+x$ mol% (where x = 0, 0.5, 1, 1.5, 2, 2.5 and 3, respectively) ceramics were fabricated by a conventional sintering process. The doping effects on the microstructure and electrical properties of the $0.95(K_{0.5}Na_{0.5})NbO_3-0.05LiNbO_3$ ceramics were systematically investigated. When the 3 mol % $Ag_2O$ doped $0.95(K_{0.5}Na_{0.5})NbO_3-0.05LiNbO_3$ samples were sintered at $1,080^{\circ}C$ for 5 hrs in air, these ceramics showed excellent values of density=4.20 $g/cm^3$, piezoelectric constant ($d_{33}$)=174 pC/N and phase transition temperature$(T_c)=421.6^{\circ}C$, respectively.

• 한국세라믹학회지
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• 제32권9호
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• pp.1056-1064
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• 1995

95Pb(Mg1/3Nb2/3)O3-5PbTiO3 (hereinafter designated as 95PMN-5PT) system was prepared by the columbite-precursor method with 2 mol% excess PbO to compensate the PbO loss during thermal process. The amount of CuO was 1~10 mol%, and the effects of CuO addition on the dielectric properties of this system have been investigated. From the microstructures, XRD analysis and dielectric measurements, the solubility limit of CuO in 95PMN-5PT was found to be around 3 mol%. Lattice parameter and Curie temperature were found to be decreased as the amount of CuO increased up to the solubility limit. This result confirmed that the Cu2+-ions substituted the Pb2+-ions. It was revealed that the addition of CuO on 95PMN-5PT promoted the sinterability and properties. The room temperature dielectric constant, the loss factor and the specific resistivity of the specimens processed with optimum conditions were 23000, 1%, and 8$\times$1011Ω.cm, respectively.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.136-136
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• 1997

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.68-68
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• 2000

펄스레이저 증착법(이하 PLD)을 이용하여 마이크로파 유전체 소자 및 절연 산화막으로의 응용을 위한 MgTiO3 박막을 다양한 기판상에서 증착하였다. 사파이어 기판에 (a,c-plane Al2O3) 성장된 MgTiO3 박막은 에피텍셜 성장(epitaxial growth)이 되었으며, SiO2/Si 및 Pt/Ti/Si 기판위세 성장된 MgTiO3 박막의 경우 003방향으로 배향(oriented) 되었다. MgTiO3 박막은 450~75$0^{\circ}C$까지 기판온도를 변화시키면서 증착시켰으며, 증착시 산소분압은 50~200 mTorr로 변화시켰다. PLD 증착시 타켓에 조사된 레이저 에너지 밀도는 약 2J/cm2였으며, MgTiO3 박막 증착후 200Torr O2 분위기에서 상온까지 1$0^{\circ}C$/min 의 속도로 냉각시켰다. 사파이어 c-plane 상에서 일머나잇(ilminite) MgTiO3 구조가 55$0^{\circ}C$ 에피텍셜 성장하는 것을 관찰할 수 있었으며, 사파이어 a-plane 상에서는 MgTiO3 구조가 $650^{\circ}C$ 이상부터 110방향으로 배향되며 성장하였다. $600^{\circ}C$ 이상에서 c-축으로 배향된 구조를 갖고 있었다. 증착된 MgTiO3 박막의 조성분석(stoichio metric analysis)을 위해 RBS 분석을 수행하여, 증착에 이용된 타켓과 동일한 조성을 갖는 MgTiO3 박막이 성장된 것을 확인할 수 있었다. 사파이어 기판상에 증착된 MgTiO3 박막은 가시영역에서 투명하였으며, 약 270nm 파장을 갖는 영역에서 급격한 흡수단을 보였다. 이때의 MgTiO3 박막은 AFM 분석을 통해 약 0.87mn rms roughness 값을 갖는 매우 평탄한 표면구조를 갖고 있는 것을 확인하였다. MIM(Pt/MgTiO3/Pt) 구조의 캐패시터를 형성시켜 MgTiO3 박막의 유전특성(dielectric properties)을 관찰하였다. PLD로 성장된 MgTiO3 박막의 유전율(relative dielectric constant)은 약 22였으며, 1MHz에서 약 1.5%의 유전손실(dielectirc loss) 값을 보였다. 또한 이때 MgTiO3 박막은 낮은 유전분산값을 보였다.

• 한국재료학회지
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• 제22권11호
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• pp.620-625
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• 2012

A general synthetic method to make $Fe_3O_{4-{\delta}}$ (activated magnetite) is the reduction of $Fe_3O_4$ by $H_2$ atmosphere. However, this process has an explosion risk. Therefore, we studied the process of synthesis of $Fe_3O_{4-{\delta}}$ depending on heat-treatment conditions using $FeC_2O_4{\cdot}2H_2O$ in Ar atmosphere. The thermal decomposition characteristics of $FeC_2O_4{\cdot}2H_2O$ and the ${\delta}$-value of $Fe_3O_{4-{\delta}}$ were analyzed with TG/DTA in Ar atmosphere. ${\beta}-FeC_2O_4{\cdot}2H_2O$ was synthesized by precipitation method using $FeSO_4{\cdot}7H_2O$ and $(NH_4)_2C_2O_4{\cdot}H_2O$. The concentration of the solution was 0.1 M and the equivalent ratio was 1.0. ${\beta}-FeC_2O_4{\cdot}2H_2O$ was decomposed to $H_2O$ and $FeC_2O$4 from $150^{\circ}C$ to $200^{\circ}C$. $FeC_2O4$ was decomposed to CO, $CO_2$, and $Fe_3O_4$ from $200^{\circ}C$ to $250^{\circ}C$. Single phase $Fe_3O_4$ was formed by the decomposition of ${\beta}-FeC_2O_4{\cdot}2H_2O$ in Ar atmosphere. However, $Fe_3C$, Fe and $Fe_4N$ were formed as minor phases when ${\beta}-FeC_2O_4{\cdot}2H_2O$ was decomposed in $N_2$ atmosphere. Then, $Fe_3O_4$ was reduced to $Fe_3O_{4-{\delta}}$ by decomposion of CO. The reduction of $Fe_3O_4$ to $Fe_3O_{4-{\delta}}$ progressed from $320^{\circ}C$ to $400^{\circ}C$; the reaction was exothermic. The degree of exothermal reaction was varied with heat treatment temperature, heating rate, Ar flow rate, and holding time. The ${\delta}$-value of $Fe_3O_{4-{\delta}}$ was greatly influenced by the heat treatment temperature and the heating rate. However, Ar flow rate and holding time had a minor effect on ${\delta}$-value.

• 한국지구과학회지
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• 제32권7호
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• pp.707-718
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• 2011

보성-화순지역 하상퇴적물에 대한 지질집단별 자연배경치와 지구화학적 특성에 대해 연구하였다. 이를 위해 1차 수계를 따라 하상퇴적물시료 186개를 채취하였고, 실험실에서 자연건조 시킨 후, XRF, ICP-AES, NAA분석을 실시하였다. 하상퇴적물의 지질집단별 자연배경치와 지구화학적 특성을 알기 위해, 시료를 화강암질편마암(GGn)지역과 반상변정질편마암(PGn)지역으로 분리하였다. 화강암질편마암지역의 주성분원소 함량은 $SiO_2$ 45.5-73.09 wt.%, $Al_2O_3$ 12-20.76 wt.%, $Fe_2O_3$(T) 3.72-8.85 wt.%, $K_2O$ 2.38-4.2 wt.%, MgO 0.75-2.77 wt.%, $Na_2O$ 0.78-1.88 wt.%, CaO 0.27-2.1 wt.%, $TiO_2$ 0.56-1.72 wt.%, $P_2O_5$ 0.06-0.73 wt.% and MnO 0.03-0.95 wt.%이고 반상변정질편마암지역의 주성분원소 함량은 $SiO_2$ 43.74-70.71 wt.%, $Al_2O_3$ 11.54-25.05 wt.%, $Fe_2O_3$(T) 3.44-13.46 wt.%, $K_2O$ 2.08-3.86 wt.%, MgO 0.65-2.99 wt.%, $Na_2O$ 0.63-1.7 wt.%, CaO 0.35-2.07 wt.%, $TiO_2$ 0.68-4.17wt.%, $P_2O_5$ 0.1-0.31 wt.% and MnO 0.07-0.33 wt.%이다. 화강암질편마암지역 하상퇴적물의 위해원소 함량은 크롬 41.7-242 ppm, 코발트 7.6-25.1 ppm, 니켈 12-61 ppm, 구리 10-47 ppm, 아연 48.5-412 ppm, 납 17-215 ppm이고 반상변정질편마암지역은 크롬 29.6-454 ppm, 코발트 5.9-53.7 ppm, 니켈 8.7-287 ppm, 구리 6.4-134 ppm, 아연 43.6-370 ppm, 납 15-37 ppm이다. 화강암질편마암지역에서 크롬은 MgO와 코발트는 $Al_2O_3$, $Fe_2O_3$(T), MgO와 니켈은 $Fe_2O_3$(T), CaO, MgO와 높은 상관성을 가지나, 구리, 아연, 납은 비교적 낮은 상관성을 보였다. 반상변정질편마암지역에서 일반적으로 크롬, 코발트, 니켈, 구리는 주성분원소와 대부분 높은 상관성을 보였으나, 아연과 납은 낮은 상관성을 보였다.

• 한국세라믹학회지
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• 제33권4호
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• pp.385-390
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• 1996

The electrical resistivity of the ceramic glaze coated on ceramic substrate plays an important role on the characteristics of the thick and thin film electrical circuits. In this study the effects of the various modifiers on the electrical resistivity were examined in SiO2-Al2O3-B2O3-RO-Na2O (RO=CaO , SrO, BaO, PbO) glass system. In alkali free glasses where divalent cations are responsible for electrical conduction the electrical conductivity of th glasses increased with the ionic size of divalent cations due to the decrease in the bond strength between oxyben and divalent cation. In Na2O containing glasses however where Na+ ion is responsible for electrical conduction the ionic conductivity decreased with the ionic size of divalent cations because the blocking effect of the cations on Na+ ion movement increased with larger divalent cations. Na+ ionic conduction also depended on the glass structure relaxation due to the corrdination number changes of B2O3 and Al2O3 which varied with the NaO2 content in the glass.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.924-929
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• 2004

The microstructure, electrical and dielectric characteristics of $ZnO-{Pr}_6{O}_11-{CoO}-{Dy}_2{O}_3$-based varistors were investigated without and with various metal oxide additives(NiO, MgO, Cr$_2$O$_3$). The average grain size decreased in the range of 18.4 $\backsim$ 11.5 $\mu$m, in order of NiO\longrightarrowMgO\longrightarrow{Cr}_2{O}_3$ and the density decreased in the range of 5.62 \backsim 5.33 $g/{cm}^3$ in order of NiO\longrightarrowCr$_2$O$_3$\longrightarrowMgO. While, the nonlinear exponent increased In the range of 19.8$\backsim$67.4 in order of NiO\longrightarrowMgO\longrightarrow${Cr}_2{O}_3$ and the leakage current decreased in the range of 25.6 $\backsim$ 1.2 $\mu$A in order of NiO\longrightarrow${Cr}_2{O}_3$\longrightarrowMgO. Among all varistors, the Cr$_2$O$_3$-added varistor exhibited the highest nonlinearity, with a nonlinear exponent of 67.4 and a leakage current of 1.2 $\mu$A. Furthermore, this varistor exhibited the lowest dielectric dissipation factor of 0.0407.

• 한국세라믹학회지
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• 제30권8호
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• pp.615-622
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• 1993

In order to increase chemical durability of thin films in binary system B2O3-SiO2 and Al2O3-SiO2 on the slide glass by the dip-coating technique from TEOS(Tetraethyl Orthosilicate) and boric acid or aluminum nitrate, phosphoric acid(5~20mol%) was added, respectively. Corrosion of acid and alkali of samples treated with 1N, HCl, NaOH and distilled water at 10$0^{\circ}C$ for 15 minute, were measured IR transmittance and variance of transmittance at visible range. Surface structure of thin film was investigated with SEM and formation of crystal phase according to additiion of phosphoric acid was measrued with XRD. In Al2O3-SiO2 system, change of remarkable characteristic was not obtained at the addition of P2O5 but transmittance of thin film was decreased with addition of P2O5 in B2O3-SiO2 system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.422-425
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• 2001

The electrical properties of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-La$_2$O$_3$ based varistors were investigated with sintering temperature in the range of 1240~130$0^{\circ}C$. The varistors sintered at 1240~126$0^{\circ}C$ exhibited high density, which was 5.50~5.70 g/㎤ corresponding to 95.2~98.6% of theoretical density The varistor voltage was decreased in range of 718.47~108.00 V/mm with increasing sintering temperature. The varistors sintered at 1240~126$0^{\circ}C$ exhibited good electrical properties, in which the nonlinear exponent is in the range of 79.25~49.22 and leakage current is in the range of 0.26~1.00 $\mu$A. In particular, the varistor sintered at 1240\`c showed very excellent electrical properties, in which the nonlinear exponent is 79.25 and leakage current is 0.26 $\mu$A.A.A.