• 한국세라믹학회지
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• 제23권6호
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• pp.45-51
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• 1986

$SrTiO_3$ reaction mechanism formed from $TiCl_4$ and $SrCl_2$ solution by direct-wet-process was studied. Through this study it is identified that crystalline $SrTiO_3$ is formed above pH 13.8 amorphous $SrTiO_3$ above pH7 and crystallization temperature of amorphous $SrTiO_3$ is at 37$0^{\circ}C$. the final products are composed of 60% crystalline $SrTiO_3$ and 40% amorphous $SrTiO_3$ The amorphous $SrTiO_3$ is identified with the IR absorption spectrum of Sr-Ti-O by FT-IR spectrometer. Under pH 7 gelationus metatitanate (H2TiO3) is formed from TiCl4 but above pH7 the activity by the formation of metatitnic acid ion $[TiO_3]^{2-}$ is so high that $SrTiO_3$is formed more easily through the reaction with $Sr^{2+}$.

• 한국세라믹학회지
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• 제30권11호
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• pp.925-932
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• 1993

The perovskite phase in PZN-PMN-PT (Pb(Zn, Mg)1/3Nb2/3O3-PbTiO3) pseudoternary ceramics was stabilized by the addition of excess constituent divalent oxides (PbO, MgO and ZnO). The excess addition of 5mol% MgO or 7.5mol% PbO fully stabilized the perovskite phase. The enhanced diffuse phase transition (DPT) and the decrease in the electrical resistivity observed in the presence of excess ZnO or MgO were interpreted in terms of the additional formation of negatively charged, short-range ordered 1:1 domains with a concomitant generation of charge carriers, holes.

• Korean Chemical Engineering Research
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• 제57권5호
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• pp.714-722
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• 2019

산 염기성질이 다양하게 존재하는 담체($SiO_2-Y_2O_3$, $Al_2O_3$, $SiO_2-ZrO_2$, $SiO_2$, $TiO_2$, MgO) 상에 17 wt% Ni을 고정한 상태에서 함침법을 사용하여 촉매를 제조하여 수소 존재 하에 에탄올과 암모니아의 환원성 아민화 반응에 대한 촉매활성을 비교 평가하였다. 반응 전후에 있어 사용된 촉매는 X-선 회절, 질소 흡착, 에탄올-승온탈착(EtOH-TPD), 이소프로판올-승온탈착(IPA-TPD), 수소 화학흡착을 사용하여 특성분석을 수행하였다. pH 9.5 이상에서 침전법을 사용하여 $ZrO_2$와 $Y_2O_3$ 담체 제조 시 파이렉스 반응기에서 미량의 Si 용융으로 인해 $SiO_2-ZrO_2$와 $SiO_2-Y_2O_3$ 복합 산화물이 각각 생성되었다. 사용된 촉매 중에서 $Ni/SiO_2-Y_2O_3$ 촉매가 가장 좋은 활성을 보였으며 이는 높은 니켈 분산도와 EtOH-TPD와 IPA-TPD에서의 낮은 탈착온도 등과 밀접한 관련이 있었다. Ni/MgO 촉매상에서의 낮은 촉매 활성은 NiO-MgO 고형물 형성에 기인한 것으로 보이며, $Ni/TiO_2$ 경우에서는 담체-금속 간의 강한 상호 작용으로 인해 낮은 니켈 금속 상 존재로 인해 반응성이 낮게 나왔다. $TiO_2$와 MgO 이외의 담체를 사용한 경우에 있어서 유사한 에탄올 전환율에서의 에틸아민류와 아세토니트릴 선택도는 큰 차이를 보이지 않았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.74-76
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• 1995

ZnO varistor with composition of ZnO(90wt%)-Bi$_2$O$_3$(3wt%)-Sb$_2$O$_3$(3.6wt%)-CO$_2$O$_3$(1.16wt%)-NiO(0.88wt%)-MnO$_2$(0.71wt%)-Cr$_2$O$_3$(0.93wt%) according to Al$_2$O$_3$addtive was fabricated by sintering methods. The effects of Al$_2$O$_3$dopant on the I-V characteristics of ZnO varistors were investigated. These changes of electric properties were found to be caused by the variation of grains and grain boundary related to Al$_2$O$_3$dopting. And the conductive mechanism of ZnO varistor in prebreakdown region were investigated with defect model.

• 한국세라믹학회지
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• 제31권11호
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• pp.1299-1306
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• 1994

Effect of MgO content on microstructural evolution and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 system was investigated. MgO content was varied from 10 mol% deficiency to 10 mol% excess of stoichiometric composition, respectively. It was found that MgO-deficient specimen showed faster grain growth rate than stoichometric and MgO excess BMT system. Besides, sandwich type precipitates of Ba5Ta4O15 which was formed within the BMT grain, might lead to the anisotropic grain growth of BMT grain. On the contrary, in MgO excess specimen, BMT grain growth rate was retarded by precipitations of MgO phase in grain boundary. Besides, the Q values of MgO-deficient showed lower than MgO-excess due to precipitations of Ba5Ta4O15 within BMT grain.

• 마이크로전자및패키징학회지
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• 제4권2호
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• pp.55-62
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• 1997

P2O3-PbO-SiO2-Al2O3계 조성을 이용하여 저온에서 소결이 가증하며 열팽창계수와 유전율이 낮은 회로기판용 glass ceramics를 제조하고자 하였다. 155$0^{\circ}C$에서 2시간 동안 용 융하여 제조한 모유리의열팽창 거동을 확인하기 위하여 TMA로 열분석을 실시하였으며 이 유리를 분말화하여 80$0^{\circ}C$에서 열처리 하였다. 이때 cristobalite 형성억제제로 Ga2O3를 사용 하였으며 Ga2O3 첨가량에 따른 억제 영향을 XRD를 통행 확인하였다. Ga2O3를 첨가한 유리 분말로 pellet을 제조하여 열처리를 하였고 소결시편의 표면을 SEM을 통해 관찰하였다. 열 처리한 pellet에 silver paste를 screen printing하여 유전율을 측정하였으며 조성에 따른 유 전율의 변화를 확인하였다.

• 한국재료학회지
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• 제20권7호
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• pp.370-373
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• 2010

In fabricating plasma display panels, the photolithographic process is used to form patterns of barrier ribs with high accuracy and high aspect ratio. It is important in the photolithographic process to control the refractive index of the photosensitive paste. The composition of this paste for photolithography is based on the $B_2O_3-SiO_2-Al_2O_3$ glass system, including additives of alkali oxides and rare earth oxides. In this work, we investigated the density, structure and refractive index of glasses based on the $B_2O_3-SiO_2-Al_2O_3$ system with the addition of $Li_2O$, $K_2O$, $Na_2O$, CaO, SrO, and MgO. The refractive index of the glasses containing K2O, Na2O and CaO was similar to that of the [BO3] fraction while that of the SrO, MgO and Li2O containing glasses were not correlated with the coordination fraction. The coordination number of the boron atoms was measured by MAS NMR. The refractive index increased with a decrease of molar volume due to the increase in the number of non-bridging oxygen atoms and the polarizability. The lowest refractive index (1.485) in this study was that of the $B_2O_3-SiO_2-Al_2O_3-K_2O$ glass system due to the larger ionic radius of $K^+$. Based on our results, it has been determined that the refractive index of the $B_2O_3-SiO_2-Al_2O_3$ system should be controlled by the addition of alkali oxides and alkali earth oxides for proper formation of the photosensitive paste.

• 한국세라믹학회지
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• 제34권4호
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• pp.373-379
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• 1997

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

• 한국세라믹학회지
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• 제20권3호
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• pp.236-242
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• 1983

The purpose of present study is to find the structures physical properties and their inter-relations in the system of (60-x) PbO.xMO.$40B_2O_3$ glasses where MO represents for ZnO and CdO. The experiments such as differential thermal analysis infrared spectral analysis X-ray diffraction analysis density and thermal expansion measurements have been done. From infrared spectral analysis the structural units of glasses and the corresponding crystallized glasses were com-posed of $BO_3$ triangles and $BO_4$ tetrahedra. These basic units found in $PbO-B_2O_3$ binary glass system did not charge even though the divalent metallic oxides were substituted for PbO. The structures of these ternary glasses were more coalescenced than $PbO-B_2O_3$ binary glass system. This fact was supported bydecrease in thermal expansion coeffici-ent and molar volume with substitution of divalent metallic oxide for PbO. Crystalline phases obtained from the heat treatment of the $PbO-ZnO-B_2O_3$ glasses were 4PbO.2ZnO.$5B_2O_3$ PbO.2ZnO.$B_2O_3$ and unknown phases.

• 한국결정성장학회지
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• 제31권1호
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• pp.1-7
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• 2021

Ga2O3의 준 안정상인 ε-Ga2O3는 육각형 구조나 준 육각형 구조를 가지는 기판들과 정합성이 우수하여 β-Ga2O3보다 상대적으로 쉽게 낮은 표면 거칠기와 결함 밀도를 갖는 박막을 얻을 수 있다. 이에 ε-Ga2O3를 고온에서 열처리하면 β-Ga2O3로 상전이 되는 특성을 이용하여 표면 거칠기와 결함 밀도가 낮은 고품질 β-Ga2O3 박막의 제조를 시도하였다. 이를 위해서는 고품질 ε-Ga2O3 박막의 성장이 선행되어야 하므로 본 연구에서는 갈륨과 산소의 공급 유량 비율에 따른 Ga2O3 박막의 구조적, 형태적 특성을 분석함으로써 최적의 유량 비율을 조사하였다. 추가로 열처리 조건과 ε-Ga2O3 박막에 혼입된 β-Ga2O3가 상전이 이후 β-Ga2O3의 결정성에 미치는 영향도 함께 조사하였다.