• 한국신재생에너지학회:학술대회논문집
• /
• 2008.05a
• /
• pp.588-590
• /
• 2008

The thermal signature of nucleation process is characterized by the induction time, the degree of supercooling, and the equilibrium temperature depression. The initiation of nucleation presents stochastic characteristics. The factors that affect nucleation are mechanical impact, ionic concentration, mineral surface characters, and pore size. Hydrate-bearing sediments behave mechanically like other cemented sediments. The data set has important implications for the calibration and interpretation of geophysical measurements and downhole logs collected in gas hydrate provinces, providing particular insight for the interpretation of P- and S-wave data and resistivity logs. In addition, laboratory formation history and ensuing pore-scale spatial distribution likely have a more pronounced effect on the macroscale mechanical properties of hydrate-bearing sediments

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.25 no.7
• /
• pp.759-766
• /
• 1988

the effect of heat treatment in oxygen ambient on the nucleation and growth of oxidation induced stacking faults(OSF) in n-type(100)silicon wafer has been investigated. The growth of OSF is determind as a function of oxygen concentration in silicon wafer, heat treatment time and temperature, and the activation energy for the growth of OSF can be obtained from the growth kinetics. The activation energies are respectively 2.66 eV for dry oxidation and 2.37 eV for wet oxidation. In this paper, we have also studied the structural feature of OSF with the comparison of optical microscopic morphology and crystalline structure.

• Proceedings of the Korean Nuclear Society Conference
• /
• 1996.05b
• /
• pp.241-246
• /
• 1996

An analytical model to calculate rate of vapor generation due to heterogeneous wall nucleation in flashing flow is developed. In the present model, an important parameter of the vapor generation term, i.e. nucleation site density is calculated by integrating its probability distribution function with respect to active cavity radius. The limits of integration are minimum and maximum active cavity radii, and these are formulated using an active cavity model for nucleate boiling. This formulation, therefore. can statistically account for the effect of surface specific thermo-physical and geometric conditions on the vapor generation rate and flashing inception. For verifying the adequacy of the present model, steady state two-fluid and the bubble transport equations are solved with applicable constitutive equations. The applicable region of the bubble transport equation is also extended to churn-turbulent flow regime to predict interfacial area concentration at high void fraction. Predicted results in terms of axial pressure and void fraction profiles along the channels are compared with experimental data of Super Moby Dick and BNL Reasonable agreements have been achieved and this shows the applicability of the present model to flashing flow analysis.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.132-132
• /
• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

• Korean Journal of Materials Research
• /
• v.11 no.7
• /
• pp.615-621
• /
• 2001

We carried out the kinetic model calculations in order to estimate the nucleation rates for two kinds of half-loop dislocations in highly strained hetero-epitaxial growths; $60^{\circ}$dislocations and twinning dislocations. The surface defects and the stress concentration effects were considered in this model, and the remaining elastic strain of the epilayers with increasing film thickness was taken into account by using the modified Matthews' relation. The calculations showed that the stress concentration effect at surface imperfections is very important for describing the defect generation in highly mismatched epitaxial growth. This work also showed that the stress concentration effect determined the type of dislocation nucleating dominantly at early growth stages in accordance with our XTEM (cross-section transmission electron microscopy) defect observation.

• The Korean Journal of Ceramics
• /
• v.3 no.1
• /
• pp.5-12
• /
• 1997

Charged carbon clusters which are formed by the gas activation are suggested to be responsible for the formation of the metastable diamond film. The number of carbon atoms in the cluster that can reverse the stability between diamond and graphite by the capillary effect increases sensitively with increasing the surface energy ratio of graphite to diamond. The gas activation process produces charges such as electrons and ions, which are energetically the strong heterogeneous nucleation sites for the supersaturated carbon vapor, leading to the formation of the charged clusters. Once the carbon clusters are charged, the surface energy of diamond can be reduced by the electrical double layer while that of graphite cannot because diamond is dielectric and graphite is conducting. The unusual phenomena observed in the chemical vapor deposition diamond process can be successfully approached by the charged cluster model. These phenomena include the diamond deposition with the simultaneous graphite etching, which is known as the thermodynamic paradox and the preferential formation of diamond on the convex edge, which is against the well-established concept of the heterogeneous nucleation.

• Journal of the Korean Vacuum Society
• /
• v.7 no.2
• /
• pp.94-103
• /
• 1998

We investigated a bias effect for diamond films deposited by a HFCVD(Hot Filament Chemical Vapor Deposition) method using a methane-hydrogen gas mixture. During deposition total chamber pressure, methane concentration, filament temperature and substrate temperature was 20 torr, 1.0%, $2100^{\circ}C$ and $980^{\circ}C$ respectively. Also DC bias was applied during both the nucleation stage and the growth stage systematically. We found that negative bias enhanced the nucleation density at the nucleation stage, but it made a bad influence on the morpholohy of films at the growth stage. Positive bias enhanced the growth rate and resulted in a good morpholohy of films. Therefore we concluded that it was effective to apply the negative bias during the nucleation stage and then to switch into the positive bias during the growth stage in the fabrication of diamond films.

• Journal of the Korean Vacuum Society
• /
• v.15 no.2
• /
• pp.168-172
• /
• 2006

GaN nucleation layers were grown by hydride vapor phase epitaxy (HVPE) and the effect of growth temperature on the structural properties of GaN nucleation layers for nanorods was investigated by synchrotron x-ray scattering and Atomic Force Microscopy (AFM). For the samples grown at different temperatures, two-component rocking profiles of (002) GaN Bragg peaks for the GaN nucleation layers were observed with one very sharp and the other broad. It was shown that the two-component rocking profile could be qualitatively explained by surface morphology, which was in good agreement with AFM result, from which we could conclude that relatively low temperature is favorable for GaN nanorods formation.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.29 no.6
• /
• pp.239-244
• /
• 2019

Two hydrogenation surface modifications, namely hydrogen atmosphere heat treatment and hydrogen plasma treatment, were found to lead to improved dispersion of nanodiamond (ND) seed particles and enhanced nucleation density for deposition of smooth ultrananocrystalline diamond (UNCD) film. After hydrogenation, the C-O and O-H surface functionalities on the surface of nanodiamond particles were converted to the C-H surface functionalities, and the Zeta potential was increased. As the degree of dispersion was improved, the size of nanodiamond aggregates decreased significantly and nucleation density increased dramatically. After hydrogen heat treatment at 600℃, average size of ND particles was greatly reduced from 3.5 ㎛ to 34.5 nm and a very high nucleation of ~3.9 × 10¹¹ nuclei/㎠ was obtained for the seeded Si surface.

• Journal of the Korean Ceramic Society
• /
• v.42 no.2 s.273
• /
• pp.94-98
• /
• 2005

$RuO_2$ is widely studied as a lower electrode material for high dielectric capacitors in DRAM (Dynamic Random Access Memories) and FRAM (Ferroelectric Random Access Memories). In this study, the effects of hydrogen, oxygen, and argon Electron Cyclotron Resonance (ECR) plasma pretreatments on deposited by Metal Organic Chemical Vapor Deposition (MOCVD) $RuO_2$ nucleation was investigated using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM) analyses. Argon ECR plasma pretreatment was found to offer the highest $RuO_2$ nucleation density among these three pretreatments. The mechanism through which $RuO_2$ nucleation is enhanced by ECR plasma pretreatment may be that the argon or the hydrogen ECR plasma removes nitrogen and oxygen atoms at the TiN film surface so that the underlying TiN film surface is changed to Ti-rich TiN.