• Title/Summary/Keyword: Nucleation and growth

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Crystal growth of BT-based ferroelectric films for nonvolatile memories

  • Yang, B.;Park, N.J.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.4
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    • pp.151-154
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    • 2004
  • Issues of ferroelectric high-density memories (>64 Mb) indispensable for upcoming ubiquitous era have been on the cell integration less than $0.1\;\mu\textrm{m}^2$ and reliabilities. Thus nanoscale control of microstructures of ferroelectric films with large switching polarization has been one of the issues to obtain the uniform electrical properties for realization of high-density memories. In this study the grain orientations and distributions of BT-based films by spin-on coatings were examined by FEG-SEM/EBSD. Ferroelectric domain characteristics by PFM were also performed to study the dependence of reliabilities on the grain orientations and distributions. It is believed that understandings of the nucleation and growth mechanisms of the a- or b-axis oriented films during the thermal processes such as RTA and furnace annealing affecting on grain orientation and uniformity could be possible based on our experimental results.

Diopside DSD (crystal size distribution) in the Contact Metamorphic Aureole (Hwanggangni Formation) near the Daeyasan Granite Goesan, Korea (괴산지역 대야산 화강암체 주변 접촉변성대(황강리층)에서의 투휘석 결정 크기분포)

  • Kim, Sangmyung;Kim, Hyung-Shik
    • The Journal of the Petrological Society of Korea
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    • v.5 no.2
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    • pp.161-167
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    • 1996
  • The CSD (crystal size distribution) of diopside crystals in the calc-silicate hornfels of the Hwanggangni Formation intruded by the Cretaceous Daeyasan granite shows the patterns of continuous nucleation and growth. There is correlation between the distance from the intrusion contact and the slopes from the linear part of log(population density) vs. size diagrams. In the log(population density) vs. size diagrams of the samples systematically collected from the intrusion contact, two different groups are recognized; the slopes for the samples near the intrusion contact (horizontal distance from the contact less than 50m) are gentler (1500$cm^{-1}$) than those for the samples away from the intrusion contact (2500$cm^{-1}$, distance from the contact greater than 100 m). These differences may reflect the differences in growth rates and crystallization time, or the differences in diopside-forming reactions. All of the log(population density) vs. size diagrams show depletion of smaller crystals. The observed depletion may be due to Ostwald ripening or the changes in nucleation rates as the reactant phases diminishes. Similar grouping is also possible for the observed degree of depletion of smaller crystals; the depletion decreases with increasing distance from the intrusion contact, suggesting temperature-dependent rates of Ostwald ripening.

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Crystallization in Li$_2$O-A1$_2$O$_3$-SiO$_2$ Glass induced by 355 nm Nd:YAG Laser Irradiation

  • Lee, Yong-Su;Kang, Won-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.2
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    • pp.43-46
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    • 2000
  • Nd:YAG laser of 355 nm wavelength, which amounts to 3.5 eV, produced by a harmonic generator was used to create Ag metallic particles as seeds for nucleation in photosensitive glass containing $Ag^+$ and $Ce^{3+}$ . The pulse widths and frequency of the laser were 8ns and 10 Hz, respectively. For crystalline growth, heat-treatment following laser irradiation was carried out at $570^{\circ}C$ for 1h. Then, the $LiAlSi_3O^8$ crystal phase appeared in the laser irradiated lithium aluminum silicate glass. We present the effect of laser-induced nucleation compared with spontaneous nucleation by heat treatment fur crystallization in the glass.

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Crystallization in Li20-A1203-Si02 Glass induced by 355nm Nd:YAG Laser Irradiation

  • Lee, Yong-Su;Kang, Won-Ho;Song, Sun-Dal
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.04a
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    • pp.112-117
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    • 2000
  • Nd:YAG laser of 355nm wavelength, which amounts to 3.5eV, produced by a harmonic generator was used to create Ag metallic particles as seeds for nucleation in photosensitive glass containing Ag+ and Ce3+. The pulse widths and frequency of the laser were 8ns and 10Hz, respectively. For crystalline growth, heat-treatment following laser irradiation was carried out at $570^{\circ}C$ fur 1h. Then, the LiAlSi3O8. crystal phase appeared in the laser irradiated lithium aluminum silicate glass. We present the effect of laser-induced nucleation compared with spontaneous nucleation by heat treatment for crystallization in the glass.

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Nucleation and Growth Mechanism of Sticking Phenomenon in Ferritic Stainless Steel (페라이트계 스테인레스강의 STICKING 발생 및 성장기구)

  • Jin, W.;Choi, J.Y.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 1999.08a
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    • pp.373-382
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    • 1999
  • Nucleation and growth process of sticking particle in ferritic stainless steels was investigated using a two disk type hot rolling simulator. The sticking behavior was strongly dependent on the surface roughness of a high speed steel roll(HSS) and the oxidation resistance of the ferritic stainless steels. A hot rolling condition with the lower oxidation resistance of the stainless steel and the higher surface roughness of HSS roll was more sensitive to sticking occurrence. It was also illucidated that the initial sticking particles were nucleated at the scratches formed on the roll surface and were served as the sticking growth sites. As rolling proceeded, the sticking particles grew sites. As rolling proceeded, the sticking particles grew by the process that the previous sticking particles provided the sticking growth sites.

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ECR Plasma Pretreatment on Sapphire and Silicon Substrates for ZnO ALE (ZnO ALE를 위한 Si, sapphire기판의 ECR 플라즈마 전처리)

  • Lim Jongmin;Shin Kyoungchul;Lee Chongmu
    • Korean Journal of Materials Research
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    • v.14 no.5
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    • pp.363-367
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    • 2004
  • Recently ZnO epitaxial layers have been widely studied as a semiconductor material for optoelectronic devices. Sapphire and silicon are commonly selected as substrate materials for ZnO epitaxial growth. In this communication, we report the effect of the ECR plasma pretreatment of sapphire and silicon substrates on the nucleation in the ZnO ALE (atomic layer epitaxy). It was found that ECR plasma pretreatment reduces the incubation period of the ZnO nucleation. Oxygen ECR plasma enhances ZnO nucleation most effectively since it increases the hydroxyl group density at the substrate surface. The nucleation enhancing effect of the oxygen ECR plasma treatment is stronger on the sapphire substrate than on the silicon substrate since the saturation density of the hydroxyl group is lower at the sapphire surface than that at the silicon surface.

The Observation of Nucleation & Growth during Water Vapor Induced Phase Inversion of Chlorinated Poly(vinyl chloride) Solution using SALS

  • Jang, Jae Young;Lee, Young Moo;Kang, Jong Seok
    • Korean Membrane Journal
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    • v.6 no.1
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    • pp.61-69
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    • 2004
  • Small angle light scattering (SALS) and field emission scanning electron microscope (FE-SEM) have been used to investigate the effects of alcohol on phase separation of chlorinated poly(vinyl chloride) (CPVC)/tetrahydrofuran (THF)/alcohol (9/61/30 wt%) solution during water vapor induced phase separation. A typical scattering pattern of nucleation & growth (NG) was observed for all casting solutions of CPVC/THF/alcohol. In the case of the phase separation of CPVC dope solution containing 30 wt% ethanol or n-propanol, the demixing with NG was observed to be heterogeneous. Meanwhile, the phase separation of CPVC dope solution with 30 wt% n-butanol was found to be predominantly homogeneous NG. Although the different phase separation behavior of NG was observed with types of alcohol additives, the resultant surface morphology had no remarkable differences. That is, even though the NG process by water vapor is either homogeneous or heterogeneous, this difference does not play a main role on the final surface morphology. However, it was estimated from the result of hydraulic flux that the phase separation by homogeneous NG provided the membrane geometry with lower resistance in comparison with that by heterogeneous one.

The effect of plamsa treatment on superconformal copper gap-fill

  • Mun, Hak-Gi;Kim, Seon-Il;Park, Yeong-Rok;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.249-249
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    • 2010
  • The effect of forming a passivation layer was investigated in superconformal Cu gap-filling of the nano-scale trench with atomic-layer deposited (ALD)-Ru glue layer. It was discovered that the nucleation and growth of Cu during metal-organic chemical vapor deposition (MOCVD) were affected by hydrogen plasma treatments. Specifically, as the plasma pretreatment time increased, Cu nucleation was suppressed proportionally. XPS and Thermal Desorption Spectroscopy indicated that hydrogen atoms passivate the Ru surface, which leads to suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. For gap-fill property, sub 60-nm ALD Ru trenches without the plasma pretreatment was blocked by overgrown Cu after the Cu deposition. With the plasma pretreatment, superconformal gap filling of the nano-scale trenches was achieved due to the suppression of Cu nucleation near the entrances of the trenches. Even the plasma pretreatment with bottom bias leads to the superconformal gap-filling.

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Preparation and Characterization of Glass-ceramics in MgO-${Al_2}{O_3}$-$SiO_2$ Glass (MgO-${Al_2}{O_3}$-$SiO_2$계 결정화유리의 제조 및 물성평가)

  • 손성범;최세영
    • Journal of the Korean Ceramic Society
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    • v.37 no.6
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    • pp.604-611
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    • 2000
  • Glass-ceramics containing a cordierite (2MgO-2Al2O3-5SiO2) as a main crystal phase was prepared from MgO-Al2O3-SiO2 system glass through a controlled 2-step heat treatment for the application to magnetic memory disk substrate for higher storage capacity. Parent glasses prepared with addition of CeO2 as a fulx and TiO2 as a nucleating agent were crystallized by a 2-step heat treatment i.e. nucleation and crystal grwoth. Then the maximum nucleation and crystal growth rates were investigated and several properties such as bending strength, surface hardness and surface roughness were also studied for heat treated glass. As a result, only a $\alpha$-cordierite was precipitated as a main crystal phase for all heat treatment conditions and the maximum nucleation and crystal growth rates were 2.4$\times$109/㎣.hr at 80$0^{\circ}C$ and 0.3${\mu}{\textrm}{m}$/hr at 915$^{\circ}C$ respectively. After being nucleated at 80$0^{\circ}C$ for 5 hours and then crystallized at 915$^{\circ}C$ for 1 hour, the heat treated glass had a crystal volume fraction of 17.6% and crystal size fo 0.3${\mu}{\textrm}{m}$, and showed the optimum properties for the application to magnetic memory disk substrates as follows. ; Bending strength of 192 MPa, Vidkers hardness of 642.1kgf/$\textrm{mm}^2$, and surface roughness of 27$\AA$.

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Crystallization Kinetics of NTO in a Batch Cooling Crystallizer (회분식 냉각 결정화기에서 NTO의 결정화 메카니즘)

  • Kim, K.J.;Kim, M.J.;Yeom, C.K.;Lee, J.M.;Choi, H.S.;Kim, H.S.;Park, B.S.
    • Applied Chemistry for Engineering
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    • v.9 no.7
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    • pp.974-978
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    • 1998
  • The kinetics of crystal growth and nucleation in dependence on the supersaturation of an aqueous solution of 3-nitro-1,2,4-triazol-5-one(NTO) were evaluated on the draft tube-baffle(DTB) crystallizer operated batchwise. The crystal growth rate is proportional to the supersaturation to the 2.9 power, and the nucleation rate to the 4.2 power. The uncleation behavior for NTO-water system in DTB crystallizer was grasped according to Mersmann's criteria. The nucleation in this crystallizer was found to act with heterogeneous nucleation and surface uncleation simultaneously. Simplified relation was derived for calculation of mean crystal size of product crystals from the batch cooling crystallizer. The obtained relation was verified by a set of experiments.

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