• 폴리머
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• 제25권4호
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• pp.496-502
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• 2001

본 연구에서는 곁사슬에 di-azobenzene 그룹을 갖는 polyquinonediimine (PQDI)을 $TiCl_4$존재 하에서 축합 중합법으로 합성하였다. 합성된 단량체와 고분자는 FT-IR과 $^1H-NMR$로 확인 하였으며, 특히 적외선 스펙트럼에 의하여 고분자의 특성 피크인 1625 cm$^{-1}$ 부근에서 >C=N 이중결합이 형성되었음을 보여 주었다. Di-azobenzene이 한쪽에 붙어있는 PQDI는 유전 상수가 큰 메탄올, 아세톤 및 비극성 용매에는 거의 녹지 않았으나, 유전 상수가 작은 극성 용매에는 아주 좋은 용해성을 보여주었다. GPC에 의한 분자량 분포는 1.38로 좁은 분포를 가졌고, X-ray 분석으로부터는 halo만 나타나기 때문에 열처리 없이 유리 전이온도 부근에서 분극처리를 행하여 SHG를 측정하였다. 고분자의 열 분석에 의하면, TGA측정에서는 280 $^{\circ}C$에서 분해온도가 나타나므로, 열적으로 안정한 고분자임을 알 수 있으며, DSC에 의한 T$_g$값은 116$^{\circ}C$이였고, di-azobenzene이 곁사슬로 결합된 PQDI의 SHG값 x$^{(2)}$ 는 1.2pm/V 값을 가졌고, 경시 안정성의 특정 결과 초기 상태에서는 약간의 SHG 감소를 가져왔으며, 20시간 후에는 안정성을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.96-96
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• 2016

Nanotechnology mostly employs nano-materials and nano-structures with distinctive properties based on their size, structure, and composition. It is quite difficult to produce nano-materials and nano-structures with identical sizes, structures, and compositions in large quantities, because of spatiotemporal fluctuation of production processes. In other words, fluctuation is the bottleneck in nanotechnology. We propose three strategies to suppress such fluctuations: employing 1) difference between linear and nonlinear phenomena, 2) difference in time constants, and 3) nucleation as a bottleneck phenomenon. We are also developing nano- and micro-scale guided assembly using plasmas as a plasma nanofabrication.1-5) We manipulate nano- and micro-objects using electrostatic, electromagnetic, ion drag, neutral drag, and optical forces. The accuracy of positioning the objects depends on fluctuation of position and energy of an object in plasmas. Here we evaluate such fluctuations and discuss the mechanism behind them. We conducted in-situ evaluation of local plasma potential fluctuation using tracking analysis of fine particles (=objects) in plasmas. Experiments were carried out with a radio frequency low-pressure plasma reactor, where we set two quartz windows at the top and bottom of the reactor. Ar plasmas were generated at 200 Pa by applying 13.56MHz, 450V peak-to-peak voltage. The injected fine particles were monodisperse methyl methacrylate-polymer spheres of $10{\mu}m$ in diameter. Fine particles were injected into the reactor and were suspended around the plasma/sheath boundary near the powered electrode. We observed binary collision of fine particles with a high-speed camera. The frame rate was 1000-10000 fps. Time evolution of their distance from the center of mass was measured by tracking analysis of the two particles. Kinetic energy during the collision was obtained from the result. Potential energy formed between the two particles was deduced by assuming the potential energy plus the kinetic energy is constant. The interaction potential is fluctuated during the collision. Maximum amplitude of the fluctuation is 25eV, and the average is 8eV. The fluctuation can be caused by neutral molecule collisions, ion collisions, and fluctuation of electrostatic force. Among theses possible causes, fluctuation of electrostatic force may be main one, because the fine particle has a large negative charge of -17000e and the corresponding electrostatic force is large compared to other forces.

• 한국지능시스템학회논문지
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• 제21권5호
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• pp.555-563
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• 2011

영상의 왜곡보정은 영상 좌표계(이미지)와 전역 좌표계(대상체)의 상관관계를 규정하는 것이다. 기존의 왜곡영상에 대한 보정은 카메라의 광학적 특성을 모델링하여 영상 좌표계와 전역 좌표계의 물리적 관계를 찾는 방식이 주를 이루고 있다. 본 논문에서는 성능 지수기반 다항식 모델을 이용하여 왜곡영상의 보정을 시도하였다. 성능지수기반 다항식 모델은 영상 좌표계와 전역 좌표계 사이의 상관관계를 다항식으로 가정한 후, 이미지와 대상체의 좌표 데이터와 성능지수를 이용하여 다항식 모델의 계수와 차수를 결정하는 방식이다. 제안한 성능지수기반 다항식 모델을 이용하여 기존의 왜곡영상을 보정방식이 가진 과대적합 문제와 같은 한계를 극복하고자 한다. 제안한 방법을 레이저 스캔 카메라로 획득한 2차원 영상에 적용하여 모델의 유효성을 검증하였다.

• 대한전자공학회논문지SD
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• 제40권8호
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• pp.580-587
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• 2003

본 논문에서는 진행파형 전계흡수 변조기 (TW-EAM: traveling-wave electroabsorption modulator)의 선형성을 분석하기 위한 새로운 모델을 제시한다. TW-EAM은 소자의 길이, 마이크로파 손실 (microwave loss, ML), 그리고 임피던스 부정합에 의한 내부반사(internal reflection, IR) 등이 소자의 선형성에 영향을 미친다. 소자의 길이의 증가는 혼변조 왜곡 (intermodulation distortion, IMD)이 최소가 되는 전원전압의 크기를 감소시킨다. ML의 증가는 3차 혼변조 왜곡 (third-order IMD, IMD3)의 감소와 동시에 출력신호의 전력도 감소시킨다. IR은 입력주파수의 파장과 소자의 길이에 따라 각기 다른 IMD 특성을 나타낸다. ML 또는 IR에 의한 SFDR (spurious-free dynamic-range)의 변화는 거의 없었으며, TW-EAM의 IR을 이용하면 ML에 의한 신호 전력의 감쇄를 보상해 줄 수 있음도 알 수 있었다. 결과적으로 50 GHz 대역의 RF-광통신용 TW-EAM은 길이가 0.8 mm이고 출력단의 임피던스 부정합을 이용하면서 최소의 손실을 가지는 구조가 적당함을 알 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제30권3호
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• pp.661-666
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• 2009

1-{2,4-Di-(2-hydroxyethoxy)phenyl}-2-(2-thienyl)ethene (5) was prepared and condensed with terephthaloyl chloride to yield polyester (6). Polymer 6 was reacted with tetracyanoethylene to give novel Y-type polyester (7) containing 1-(2,4-dioxyethoxy)phenyl-2-{5-(2,2,3-tricyanovinyl)-2-thienyl)}ethenyl groups as NLO-chromophores, which are parts the polymer backbones. Polymer 7 is soluble in common organic solvents such as acetone and N,N-dimethylformamide. It showed thermal stability up to 300 ${^{\circ}C}$ in thermogravimetric analysis with glasstransition temperature obtained from differential scanning calorimetry near 134 ${^{\circ}C}$. The second harmonic generation (SHG) coefficient ($d_33$) of poled polymer film at the 1560 nm fundamental wavelength was around 6.74 x $10^{-9}$ esu. The dipole alignment exhibited high thermal stability up to the glass-transition temperature ($Tg$), and there was no SHG decay below 135 ${^{\circ}C}$ because of the partial main-chain character of polymer structure, which is acceptable for NLO device applications.

• Bulletin of the Korean Chemical Society
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• 제13권3호
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• pp.268-274
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• 1992

An attempt to improve the second harmonic generation (SHG) efficiency of MAP (methyl (2,4-dinitrophenyl)aminopropanoate) by modifying the substituents on the amino group of MAP is described. Several MAP analogues have been prepared using optically active amino acids alanine, phenylalanine and serine, and their SHG efficiencies measured. None of the MAP analogues exhibited SHG efficiencies as high as that of MAP. X-ray crystal structures of three MAP analogues have been determined. In the crystal structures of two of them, which were the derivatives of phenylalanine, two crystallographically-independent molecules existing in the asymmetric unit are aligned almost antiparallel. These structures are consistent with the very low SHG efficiencies of these compounds. On the other hand, the crystal structure of a serine derivative reveals substantial alignment of the dinitroaniline chromophore along the polar axis. However, the angle of 86.2° between the molecular charge tranfer axis and the polar axis of the crystal is still far away from the optimum value of 54.74° for the phase-matchable SHG. The structure is consistent with the SHG efficiency of this compound which is much higher than those of the phenylalanine derivatives but still lower than that of MAP. This study demonstrates the importance of the orientation of molecules in the crystal lattice in determining secod-order nonlinear optical properties of crystalline materials.