• Computers and Concrete
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• 제25권4호
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• pp.311-325
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• 2020

In this research work, the hygrothermal and mechanical buckling responses of simply supported FG sandwich plate seated on Winkler-Pasternak elastic foundation are investigated using a novel shear deformation theory. The current model take into consideration the shear deformation effects and ensures the zero shear stresses on the free surfaces of the FG-sandwich plate without requiring the correction factors "Ks". The material properties of the faces sheets of the FG-sandwich plate are assumed varies as power law function "P-FGM" and the core is isotropic (purely ceramic). From the virtual work principle, the stability equations are deduced and resolved via Navier model. The hygrothermal effects are considered varies as a nonlinear, linear and uniform distribution across the thickness of the FG-sandwich plate. To check and confirm the accuracy of the current model, a several comparison has been made with other models found in the literature. The effects the temperature, moisture concentration, parameters of elastic foundation, side-to-thickness ratio, aspect ratio and the inhomogeneity parameter on the critical buckling of FG sandwich plates are also investigated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• 한국지진공학회논문집
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• 제9권3호
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• pp.1-8
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• 2005

본 연구는 지진으로 인하여 발생한 건물의 피해액을 보다 객관적으로 예측 평가할 수 있는 ACM(Advanced Component Method) 개발 방법에 관한 것이다. ACM은 지금까지의 재래식 손실 평가방법에 사용된 구조 기술자들의 주관적인 관점과 전문가적 견해에서 탈피하여, 지진의 크기에 따른 구조형식이 각기 다른 건물들의 내진 성글 평가 기술에 바탕을 둔 지진 손실 평가 방법이다. 그 과정을 살펴보면 먼저 선별된 전형적인 건축 구조물에 대하여 비선형 정적 내진 해석인 pushover 해석을 실행하여 그들의 건물 능력도와 각 부재의 비선형 응답을 계산한다. 지진하중은 ADRS(Acceleration-Displacement Response Spectrum)의 응답 가속도와 응답 변위의 형태로 표현하여 이를 건물 능력도와 함께 능력 스펙트럼법(Capacity Spectrum Method) 기법을 이용하여 건물의 내진 성능점을 찾는다. 또한 전체 건물을 주요 구조체인 기둥, 보, 슬래브 등과 비구조체인 비내력 벽판, 외벽 장식용 요소 등을 각각 분리하여 건물 각 부재들의 지진 응답 변위에 따른 피해율을 산출한다. 이들 각 부재들의 피해는 그 부재들의 특성에 따른 적절한 보수보강기법과 그에 따른 비용산정 모델을 이용하여 각 부재의 금전적인 피해액으로 전환한다. 마지막으로 Monte Carlo기법을 이용하여 지금까지 얻은 건물의 응답과 각 부재들의 지진에 따른 피해율, 그리고 그 부재들의 비용산정 모델을 종합하여 전체 건물의 최종의 피해율을 얻는다. 특히, 현존하는 건물에 사용된 재료와 설계 가정 하중의 가변성에 따른 건물 거동에 대한 불확실성 등을 고려하기 위하여 Latin Hypercube 추출 기법을 사용하며, 마지막으로 본 연구의 사례평가를 위하여 과거 일어났던 지진 피해정보와 손실 자료들을 바탕으로 ACM방법과 재래식 방법을 이용한 건물 손실 평가 방법을 비교 분석하였다.