• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1676-1678
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• 2000

The electrical characteristics of $Pre_{6}O_{11}$-based ZnO varistors doped with $Y_{2}O_3$ in the range 0.0-4.0 mol% sintered at 1350$^{\circ}C$ were investigated. The varistor without $Y_{2}O_3$ exhibited very low nonlinearity, which the nonlinear exponent is 4.54 and leakage current is 87.91${\mu}A$. However the varistors with $Y_{2}O_3$ exhibited in the range of 30.00-51.19 in the nonlinear exponent and 0.52-3.89${\mu}A$ in the leakage current. Especially, the varistor with $Y_{2}O_3$ of 0.5 mol% exhibited the nonlinear exponent of 51.19 and the leakage current of 1.32${\mu}A$.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.298-302
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• 2007

The electrical properties and its stability of Zn-Pr-Co-Cr-Tb-based varistors were investigated for different sintering temperatures. As the sintering temperatures increased, the varistor voltage decreased in the range of $705.2{\sim}299.1$ V/mm, the nonlinear coefficient decreased in the range of $42.4{\sim}31.7$, and the leakage current was in the range of $1.0{\sim}1.7\;{\mu}A$. The stability of electrical characteristics increased with the increase of sintering temperature. The varistors sintered at $1350^{\circ}C$ marked the high electrical stability, with $%\Delta$ $V_{1mA}=+0.1%,\;%\Delta{\alpha}=+3.2%$, and $%{\Delta}I_L=+117.6%$ for DC accelerated aging stress state of $0.95V_{1mA}/150^{\circ}C/24\;h$.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.105-109
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• 2007

The microstructure and electrical properties of Zn-Pr-Co-Cr-Tb oxide-based varistors were investigated for different $Tb_4O_7$ amounts. As the $Tb_4O_7$ amount increased, the average grain size decreased from 7.7 to $4.8{\mu}m$ and the sintered density increased from 5.73 to $5.84g/cm^3$. As the $Tb_4O_7$ amount increased, the varistor voltage increased from 280.9 to 715.8V/mm and the nonlinear coefficient increased from 26.4 to 44.4. It is assumed that these varistors can be applied for high power with compact size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.90-92
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• 1993

PM3 semiempirical calculations ions have performed on the three aromatic heterocyclic polymers. The dipole moment (${\mu}$7), static 1st-orders(${\alpha}$), 2nd-order (${\beta}$), and 3rd-order polarizabilities(${\gamma}$) were investigated to study the nonlinear optical properties of the polythiophene, polyfuran, and polypyrrole systems. As a function of n, ${\alpha}$ and ${\gamma}$ increases much more rapidly for the polythiophene systems than for the polyfuran and Polypyrrole systems due to the pi-electron delocalization.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.3-5
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• 1998

The interest in the use of borate crystals in ultraviolet(UV) nonlinear optics(NLO) has increased because all solid-stste UV lasers obtained with NLO are in highly demand. Much effort has been spent on developing borates series, such as{{{{ { beta -BaB }_{2 } {O }_{4 }(BBO), {LiB }_{ 3}{O }_{5 }(LBO)}}}} and{{{{{ CsKiB}_{6 }{O }_{10 }(CLBO)}}}} in this decade. Recently another new borate crystals, {{{{{ YCa}_{4 }O({BO }_{3 })_{3}}}}} and{{{{{Gd }_{x }{Y }_{1-x }{Ca }_{4 }O({BO }_{ 3})({Gd }_{x }{Y }_{1-x }COB)}}}} have been developed by the present authors. Here, the growth and NLO properties of YCOB and {{{{ {Gd }_{ x} {Y }_{ 1-x} }}}}CO B crystal are reported and their properties discussed in relation to those of other nonlinear optical crystals, such as LBO.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1396-1400
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• 1994

Electrical properties in the ZnO-Bi2O3-CoO-Zn7Sb2O12 system were investigated with Zn7Sb2O12 content (0.1~2 mol%). The increase of the Zn7Sb2O12 content inhibited the grain growth of ZnO, which showed a narrow grain size distribution of ZnO. The breakdown voltage (Vb) increased markedly with 1 mol% Zn7Sb2O12 addition due to the grain growth control behaviour of the Zn7Sb2O12 . The nonlinear I-V characteristic was significantly influenced by the Zn7Sb2O12 content (or Bi2O3/Zn7Sb2O12 ratio). Addition of 0.5 mol% Zn7Sb2O12 showed the highest nonlinear coefficient ($\alpha$) of 43. The leakage current in prebreakdown region was decreased with increasing Zn7Sb2O12 content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.896-901
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• 2005

The microstructure and electrical properties of praseodymium-based zinc oxide varistors were investigated at various cobalt oxide contents in the range of $0.5{\~}5.0 mol\%$. The ceramic density increased in the range of $5.25{\~}5.55 g/cm^3$ with increasing cobalt oxide content. The varistor doped with cobalt oxide of $1.0 mol\%$ exhibited the highest nonlinearity, with 66.6 in nonlinear exponent and 1.2 $\mu$A in leakage current. The donor concentration, density of interface states, and tamer height were in the range of $(1.06{\~}1.69){\times}10^{18}/cm^3$, $(3.11 {\~}3.56){\times}10^{12}/cm^2$, and 0.80${\~}$1.07 eV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.729-732
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• 2001

In this study, the effect of oxygen partial pressure on the electrical properties of vanadium oxide(VO$_{x}$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from V$_2$O$_{5}$ target in a gas mixture of argon and oxygen. The oxygen partial pressure ratio is changed from 0% to 8%. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.ure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.946-952
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• 2002

The electrical and dielectric characteristics of ZPCCY-based varistor ceramics were investigated in the sintering time range of 1∼3 h. Increasing sintering time deteriorated the nonlinearity, in which nonlinear exponent is decreased from 51.2 to 23.8 and leakage current is increased from 1.3 to 5.6 $\mu$A. As sintering time increases, the donor concentration was decreased in the range of (1.25∼l.73)$\times$10$\^$18/cm$\^$-3/ and the density of interface states is (3.64∼94.19)$\times$10$\^$12/cm$\^$-2/ with increasing sintering time. The increase in sintering time caused tan $\delta$ to increase in the range of 0.043 to 0.062 and relaxation time to increase in the range of 1.55 to 2.23 ㎲.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.419-422
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• 2001

The electrical properties of Pr$_{6}$O$_{11}$-based ZnO varistors composed of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Dy$_2$O$_3$- based ceramics were investigated with CoO content in the range of 0.5~5.0 mol%. As CoO content is increased, the average grain size and the density were increased in the range of 9.86~27.22 $\mu$m and in the range of 5.25-5.55 g/cm$^3$, respectively. The varistor voltage was decreased in the range of 235.32~86.01 V/mm due to the increase of average grain size with CoO content. The varistors doped with CoO in the rage of 1.0~2.0 mol% exhibited a high nonlinearity, in which is above 55 in the nonlinear exponent and below 1.5 $\mu$A in the leakage current. Increasing CoO content further greatly decreased the nonlinearity.ity.ity.