• Korean Journal of Optics and Photonics
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• v.19 no.3
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• pp.229-236
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• 2008

The optimum conditions of second harmonic generation (SHG) can be successfully achieved experimentally using single pass and double pass methods of a pumping beam. The beam has a power of several Watts radiated by a DOFA (Diode Laser Oscillator & Fiber Amplifier) system, which is a high power CW wavelength tunable infrared laser system, in a PPLN (Periodically Poled MgO doped Lithium Niobate) nonlinear crystal. In the case of a single pass method, the parameters are the wavelength of 535 nm for SHG and the output power of 245 mW generated from the pumping input beam with wavelength of 1070 nm and the power of 2.45 W at phase matching temperature of $108.9^{\circ}C$. The conversion efficiency of SHG was 10%. In order to enhance the output of SHG, the double pass method of the SHG system of a PPLN using a concave mirror for the retroreflection and a pair of wedged flat windows for phase compensation was also presented. In this double pass system, we obtained the SHG output beam with the wavelength of 535 nm and the maximum power of 383 mW at optimum phase matching temperature of $108.5^{\circ}C$ by using an incident pumping beam with wavelength of 1070 nm and the power of 2.45 W. The maximum conversion efficiency is 15.6%, which is more than that of the single pass method.

• Korean Journal of Optics and Photonics
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• v.30 no.4
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• pp.154-158
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• 2019

We have used a mid-IR (mid-infrared) continuous-wave (cw) optical parametric oscillator (OPO), developed previously and described in Ref. 12, to build a performance-evaluation setup for a mid-IR spectrometer. The used CW OPO had a wavelength tuning range of $ 2.5-3.6{\mu}m$ using a pump laser with a wavelength of 1064 nm and a fan-out MgO-doped periodically poled lithium niobate (MgO:PPLN) nonlinear crystal in a concentric cavity design. The OPO was combined with a near-IR integrating sphere and a Fourier-transform IR optical spectrum analyzer to build a performance-evaluation setup for mid-IR spectrometers. We applied this performance-evaluation setup to evaluating a mid-IR spectrometer developed domestically, and demonstrated the capability of evaluating the performance, such as spectral resolution, signal-to-noise ratio, spectral stray light, and so on, based on this setup.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.208-214
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• 2024

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (R_on,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (R_s) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.