• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.357-358
• /
• 2013

The non-linear characteristics of ON states are important for the application to the high density cross-point memory industry because the sneak current in neighbor cells occurred during reading, erasing, and writing process. Kw of above 20 in ON states, which is the writing current @ Vwrite/the current @ 1/2Vwrite, was required in cross-point ReRAM memory industry. The high current density non-linear IV curve of ZnSe selector was shown and the ALD HfO2 switching device has the linear properties of ON states and the compliance current of 100 uA. To evaluate the performance of the selection device, we connected itto HfO2 switching device in series. The bottom electrode of the selection device was connected to the top electrode of the RRAM. All of the bias was applied with respect to the top electrode of the selection device, whereas the bottom electrode of the RRAM was grounded. In the cross-point application, 1/2Vwrite and -1/2Vwrite were applied to the word-line and bit-line, respectively, which were connected to the selected cell, and a zero bias was applied to the unselected word-lines and bit-lines. The current @ 1/2Vwrite of the unselected cells was blocked by the selection device, thus eliminating the sneak path and obtaining a writing voltage margin. Using this method, the writing voltage margin was analyzed on the basis of the memory size.

• Applied Science and Convergence Technology
• /
• 제26권1호
• /
• pp.6-10
• /
• 2017

We investigated the stability of ionic configurations of the tip of the cantilever in non-contact AFM.; For this, we used a computational model that couples the ionic motion of the MgO surface and the oscillating cantilever. The motion of ions was connected to the oscillating cantilever using a coupling method that had been recently developed. The adhesive process on the ionic MgO surface leads to energy dissipation of the cantilever. It is shown that limited types of ionic configurations of the tip are stable during the adhesive process. Based on the present computational model, we discuss the adhesive mechanism leading to energy dissipation.

• 한국분말재료학회지
• /
• 제9권4호
• /
• pp.203-210
• /
• 2002

A new PIM in-process joining technique has been developed for more complicated and functional PIM components by application of the exuded wax from the green compacts during solvent debinding step. At first, various stainless steels and iron compacts with rectangular shape were combined, and the joining behaviors and properties were investigated by shear and tensile test, and microscopic observation. Subsequently, perfect joined three pieces of thin and hollow compacts were obtained for the combination of same and different stainless steels, and it was difficult to join the iron and stainless steel compacts in hydrogen atmosphere because of the different starting temperature of shrinkage. However, pretty good joined iron and stainless steel compacts were obtained by consideration of particle size and vacuum atmosphere. Finally, for the combination of ferro-silicon and austenitic stainless steel compacts, high functionality (magnetic (1.60Tes1a) & non-magnetic) and perfect joint were obtained.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.146-147
• /
• 2011

Processing a large area substrate for liquid crystal display (LCD) or solar panel applications in a capacitively coupled plasma (CCP) reactor is becoming increasingly challenging because of the size of the substrate size is no longer negligible compared to the wavelength of the applied radio frequency (RF) power. The situation is even worse when the driving frequency is increased to the Very High Frequency (VHF) range. When the substrate size is still smaller than 1/8 of the wavelength, one can obtain reasonably uniform process results by utilizing with methods such as tailoring the precursor gas distribution by adjustingthrough shower head hole distribution or hole size modification, locally adjusting the distance between the substrate and the electrode, and shaping shower head holes to modulate the hollow cathode effect modifying theand plasma density distribution by shaping shower head holes to adjust the follow cathode effect. At higher frequencies, such as 40 MHz for Gen 8.5 (2.2 m${\times}$2.6 m substrate), these methods are not effective, because the substrate is large enough that first node of the standing wave appears within the substrate. In such a case, the plasma discharge cannot be sustained at the node and results in an extremely non-uniform process. At Applied Materials, we have studied several methods of modifying the standing wave pattern to adjusting improve process non-uniformity for a Gen 8.5 size CCP reactor operating in the VHF range. First, we used magnetic materials (ferrite) to modify wave propagation. We placed ferrite blocks along two opposing edges of the powered electrode. This changes the boundary condition for electro-magnetic waves, and as a result, the standing wave pattern is significantly stretched towards the ferrite lined edges. In conjunction with a phase modulation technique, we have seen improvement in process uniformity. Another method involves feeding 40 MHz from four feed points near the four corners of the electrode. The phase between each feed points are dynamically adjusted to modify the resulting interference pattern, which in turn modulate the plasma distribution in time and affect the process uniformity. We achieved process uniformity of <20% with this method. A third method involves using two frequencies. In this case 40 MHz is used in a supplementary manner to improve the performance of 13 MHz process. Even at 13 MHz, the RF electric field falls off around the corners and edges on a Gen 8.5 substrate. Although, the conventional methods mentioned above improve the uniformity, they have limitations, and they cannot compensate especially as the applied power is increased, which causes the wavelength becomes shorter. 40 MHz is used to overcome such limitations. 13 MHz is applied at the center, and 40 MHz at the four corners. By modulating the interference between the signals from the four feed points, we found that 40 MHz power is preferentially channeled towards the edges and corners. We will discuss an innovative method of controlling 40 MHz to achieve this effect.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.253-253
• /
• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.361-361
• /
• 2011

Cu(InGa)(SeS2) (CIGS) thin film solar cells have recently reached an efficiency of 20%. Recent studies suggest a double graded band gap structure of the CIGS absorber layer to be a key issue in the production of high efficiency thin film solar cell using by sputtering process method. In this study, Cu(InGa)(SeS2) absorbers were manufactured by selenization and surfulization, we have deposited CIG precusor by sputtering and Se layer by evaporation before selenization. The objective of this study is to find out surfulization effects to improve Voc and to compare with non-surfulization Cu(InGa)Se2 absorbers. Even if we didn't analysis Ga depth profile of Cu(InGa)(SeS2) absorbers, we confirmed increasing of Eg and Voc through surlization process. In non-surfulization Cu(InGa)Se2 absorbers, Eg and Voc are 0.96eV and 0.48V. Whereas Eg and Voc of Cu(InGa)(SeS2) absorbers are 1.16eV and 0.57V. And the efficiency of 9.58% was achieved on 0.57cm2 sized SLG substrate. In this study, we will be discussed to improve Eg and Voc through surfulization and the other method without H2S. gas.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.218.1-218.1
• /
• 2014

In order to measure the absolute plasma density, various probes are proposed and investigated and microwave probes are widely used for its advantages (Insensitivity to thin non-conducting material deposited by processing plasmas, High reliability, Simple process for determination of plasma density, no complicate assumptions and so forth). There are representative microwave probes such as the cutoff probe, the hairpin probe, the impedance probe, the absorption probe and the plasma transmission probe. These probes utilize the microwave interactions with the plasma-sheath and inserted structure (probe), but frequency range used by each probe and specific mechanisms for determining the plasma density for each probe are different. In the recent studies, behaviors of each microwave probe with respect to the plasma parameters of the plasma density, the pressure (the collision frequency), and the sheath width is abundant and reasonably investigated, whereas relative diagnostic characteristics of the probes by a comparative study is insufficient in spite of importance for comprehensive applications of the probes. However, experimental comparative study suffers from spatially different plasma characteristics in the same discharge chamber, a low-reproducibility of ignited plasma for an uncertainty in external discharge parameters (the power, the pressure, the flow rate and so forth), impossibility of independently control of the density, the pressure, and the sheath width as well as expensive and complicate experimental setup. In this paper, various microwave probes are simulated by finite-different time-domain simulation and the error between the input plasma density in FDTD simulations and the measured that by the unique microwave spectrums of each probe is obtained under possible conditions of plasma density, pressure, and sheath width for general low-temperature plasmas. This result shows that the each probe has an optimum applicable plasma condition and reliability of plasma density measurement using the microwave probes can be improved by the complementary use of each probe.

• 한국식품과학회지
• /
• 제53권5호
• /
• pp.593-600
• /
• 2021

본 연구에서는 진공 증류 공정으로 무알코올 와인을 제조하는 과정에서 수율은 최대화하고 알코올만 선별적으로 제거하기 위해 반응표면분석법으로 공정을 최적화하였다. 이를 위해 증류 시간, 끓는점, 온도차를 독립변수로 설정하고 알코올 농도, 수율을 반응값으로 설정하였다. 그 결과, 증류 시간은 24.5분, 끓는점은 65℃, 온도차는 8℃ 일 때 알코올 농도를 1%까지 낮추면서 수율을 81.15%로 유지할 수 있었다. 끓는점에 따른 와인의 이화학적 및 관능적 특성 변화를 확인하기 위해 회귀분석 결과를 통해 도출된 반응표면모델을 활용하여 증류 시간 30분, 온도차 12±5℃, 끓는점 25-65℃의 조건에서 세 종류의 무알코올 와인을 제조하였다(끓는점 25℃, 끓는점 45℃, 끓는점 65℃). 또한, 기호도 향상을 위해 끓는점 25℃ 복원액에 원액 와인을 4.2% 첨가한 배합 와인을 제조하였다. 끓는점이 증가할수록 알코올 농도가 감소하고 CI와 Hue가 증가했지만, pH와 총산도는 영향을 받지 않았다. 관능검사에서는 색상, 향, 전체적인 기호도에서 배합 와인이 가장 높은 값을 나타냈고, 끓는점 65℃ 복원액이 가장 낮은 값을 나타냈다. 결과적으로 낮은 온도 및 끓는점에서 증류함으로써 관능 특성이 우수한 무알코올 와인을 제조할 수 있으며, 원액 와인의 배합으로 기호도를 더욱 향상시킬 수 있을 것으로 판단된다.

• 제어로봇시스템학회논문지
• /
• 제22권7호
• /
• pp.557-561
• /
• 2016

Recently, in the manufacturing process of flat panel displays, mass production methods of inline system has been emerged. In particular the next generation OLED display manufacturing process, horizontal inline evaporation process has been tried. It is important for the success of OLED inline evaporation process to develop a magnetic levitation transport system capable of transferring a carrier equipped with a mother glass with high accuracy without any physical contact along the rail under vacuum condition. In the case of existing wheel-based transfer system, it is not suitable for OLED evaporation process requiring high cleanliness. On the other hand, the magnetic levitation transport system has an advantage that it does not generate any dust and it is possible to achieve high-precision control because there are not non-linear factors such as friction force. In this paper, we introduce the high-precision magnetic levitation transport system, which is currently under development, for OLED evaporation process.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2015년도 춘계학술대회 논문집
• /
• pp.72-72
• /
• 2015

최근 비철소재 가공용 공구의 이형성 향상 코팅 및 자동차 부품의 고온 환경에서 사용할 수 있는 코팅으로 유망한 수소가 없는 비정질 다이아몬드 카본 막 (Non-Hydrogen Diamond Like Carbon films : ta-C)을 양산할 수 있는 코팅 시스템에 대한 연구 결과를 발표하고자 한다. 본 시스템은 Diamet-600이라고 하며 ta-C의 처리폭은 350 mm, 직경 450 mm 8축 공자전 치구에서 400nm/h의 증착률을 가지며, 막의 경도는 최대 65GPa을 달성하였다.