• 제목/요약/키워드: Non-vacuum

검색결과 632건 처리시간 0.032초

Effect of Soft-annealing on the Properties of CIGSe Thin Films Prepared from Solution Precursors

  • Sung, Shi-Joon;Park, Mi Sun;Kim, Dae-Hwan;Kang, Jin-Kyu
    • Bulletin of the Korean Chemical Society
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    • 제34권5호
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    • pp.1473-1476
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    • 2013
  • Solution-based deposition of $CuIn_xGa_{1-x}Se_2$ (CIGSe) thin films is well known non-vacuum process for the fabrication of CIGSe solar cells. However, due to the usage of organic chemicals in the preparation of CIG precursor solutions, the crystallization of the polycrystalline CIGSe and the performance of CIGSe thin film solar cells were significantly affected by the carbon residues from the organic chemicals. In this work, we have tried to eliminate the carbon residues in the CIG precursor thin films efficiently by using soft-annealing process. By adjusting soft-annealing temperature, it is possible to control the amount of carbon residues in CIG precursor thin films. The reduction of the carbon residues in CIG precursors by high temperature soft-annealing improves the grain size and morphology of polycrystalline CIGSe thin films, which are also closely related with the electrical properties of CIGSe thin film solar cells.

XPS Investigation of A3 Coupling Reaction in Room Temperature Ionic Liquids

  • Kwon, Ji-Hye;Youn, So-Won;Kang, Yong-Cheol
    • Bulletin of the Korean Chemical Society
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    • 제27권11호
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    • pp.1851-1853
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    • 2006
  • We herein report a new analytical application of XPS to the identification of organic molecules in room temperature ionic liquid for the first time. An organic compound, propargylamine (1), produced in 1-butyl-3-methylimidazolium hexafluorophosphate ([bmim][$PF_6$]), which is one of the room temperature ionic liquids (RTILs), via $A^3$ coupling reaction, is characterized by means of x-ray photoelectron spectroscopy (XPS) rather than using conventional organic compound analysis techniques. There are four non-equivalent carbons in RTILs and 1 each. The ratios of normalized integrated areas of the deconvoluted binding energy of core electron of carbon (C1s) peaks are well matched to the number of carbons in those compounds. The binding energies of C1s of the featured carbons in 1, C4 (sp carbons in acetylene group) and C5 ($sp^2$ carbons in benzene ring), are assigned 286.2 and 285.4 eV, respectively. These results will be able to provide an important tool and a new strategy for the analysis of organic molecules

기판과 부도체층을 개선한 $FM/Al_2O_3/FM$ (FM=Ferromagnet) 자기터널링 접합제작 및 자기수송에 관한 연구 (Improvement of Substrate and Insulationg Layer of FM Magnetic Tunneling Jundtion and the Study of Magnetic Transport)

  • 변상진;박병기;장인우;염민수;이재형;이긍원
    • 한국자기학회지
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    • 제9권5호
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    • pp.245-250
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    • 1999
  • 기판/Py/Al2O3/Co(Py=Ni81Fe19) 터널접합의 TMR(Tunneling Magnetoresistance)에 미치는 기판과 부도체층의 효과를 보기위해 산화시간을 변화시키고 기판의 종류를 변화시켜며 전기적 특성을 측정하였다. 시료는 진공중에서 in-situ로 새도우마스크를 교환하며 제작하였다. 산화시간의 증가에 따라 터널접합의 저항은 증가하였으며 측정된 MR 값은 감소하였다. 터널 비저항이 0.17 M$\Omega$($\mu\textrm{m}$)2이하인 경우 MR이 관측되었다. 기판의 종류에 따른 MR 값은 열산화시킨 Si(111), Si(100), Cornng Glass 2948, Corning Glass 7059 순으로 감소하였다. MR 값의 부호와 변화를 불균일 전류의 흐름으로 설명하였다.

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기판 온도 변화에 따른 AlN 박막 성장에 잔류 산소가 미치는 영향 (Influence of Residual Oxygen on the growth of AlN Thin Films with Substrate Temperature)

  • 김병균;이을택;김응권;정석원;노용한
    • 한국전기전자재료학회논문지
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    • 제21권5호
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    • pp.463-467
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    • 2008
  • Aluminum nitride (AlN) thin films have been deposited on Au electrodes by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different substrate temperature. It was found that substrate temperature was varied in the range up to $400^{\circ}C$, highly c-axis oriented film can be obtained at $300^{\circ}C$ with full width at half maximum (FWHM) $3.1^{\circ}$. Increase in surface roughness from 3.8 nm to 5.9 nm found to be associated with increase in grain size, with substrate temperature; however, the AlN film fabricated at $400^{\circ}C$ exhibited a granular type of structure with non-uniform grains. The Al 2p and N 1s peak in the X-ray photoelectron spectroscopy (XPS) spectrum confirmed the formation of Al-N bonds. The XPS spectrum also indicated the presence of oxynitrides and oxides, resulting from the presence of residual oxygen in the vacuum chamber. It is concluded that the AlN film deposited at substrate temperature of $300^{\circ}C$ exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

Shot-peening 표면처리된 Ti 함유 스테인리스강의 응력균열부식 (Stress Corrosion Cracking Characteristics of Shot-peened Stainless Steel Containing Ti)

  • 최한철
    • 한국표면공학회지
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    • 제37권6호
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    • pp.350-359
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    • 2004
  • Stress corrosion cracking(SCC) characteristics of shot-peened stainless steel containing Ti (0.09 wt%-0.92 wt%) fabricated by the vacuum furnace were investigated using SCC tester and potentiostat. The homogenization and the sensitization treatment were carried out at $1050^{\circ}C$ for 1hr and $650^{\circ}C$ for 5 hr. The samples for SCC were shot-peened using $\Phi$0.6 mm steel ball for 4 min and 10 min. Intergranular and pitting corrosion characteristics were investigated by using EPR and CPPT. SCC test was carried out at the condition of$ 288^{\circ}C$, 90 kgf pressure, water with 8 ppm dissolved oxygen, and $8.3xl0^{-7}$/s strain rate. After the corrosion and see test, the surface of the tested specimen was observed by the optical microscope, TEM and SEM. Specimen with Ti/C ratio of 6.14 showed high tensile strength at the sensitization treatment. The tensile strength decreased with the increase of the Ti/C ratio. Pitting and intergranular corrosion resistance increased with the increase of Ti/C ratio. Stress corrosion cracking strength of shot-peened specimen was higher than that of non shot- peened specimen. Stress corrosion cracking strength decreased with the increase of the Ti/C ratio.

파일렉스 #7740 글라스 매개층을 이용한 MEMS용 MCA와 Si기판의 양극접합 특성 (Anodic bonding characteristics of MCA to Si-wafer using pyrex #7740 glass intermediatelayer for MEMS applications)

  • 안정학;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.374-375
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    • 2006
  • This paper describes anodic bonding characteristics of MCA to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with the same properties were deposited on MCA under optimum RF sputter conditions (Ar 100 %, input power $1\;W/cm^2$). After annealing at $450^{\circ}C$ for 1 hr, the anodic bonding of MCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in $110^{-6}$ Torr vacuum condition. Then, the MCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation and simulation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity being 0.05-0.08 %FS. Moreover, any damages or separation of MCNSi bonded interfaces did not occur during actuation test. Therefore, it is expected that anodic bonding technology of MCNSi-wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

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Surface Treatment of a Titanium Implant using a low Temperature Atmospheric Pressure Plasma Jet

  • Lee, Hyun-Young;Ok, Jung-Woo;Lee, Ho-Jun;Kim, Gyoo Cheon;Lee, Hae June
    • Applied Science and Convergence Technology
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    • 제25권3호
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    • pp.51-55
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    • 2016
  • The surface treatment of a titanium implant is investigated with a non-thermal atmospheric pressure plasma jet. The plasma jet is generated by the injection of He and $O_2$ gas mixture with a sinusoidal driving voltage of 3 kV or more and with a driving frequency of 20 kHz. The generated plasma plume has a length up to 35 mm from the jet outlet. The wettability of 4 different titanium surfaces with plasma treatments was measured by the contact angle analysis. The water contact angles were significantly reduced especially for $O_2/He$ mixture plasma, which was explained with the optical emission spectroscopy. Consequently, plasma treatment enhances wettability of the titanium surface significantly within the operation time of tens of seconds, which is practically helpful for tooth implantation.

In-plane ESPI를 이용한 고온에서 STS430의 열팽창계수 측정 (Thermal Expansion Coefficient Measurement of STS430 at High Temperature by In-plane ESPI)

  • 김경석;강기수;장호섭
    • 한국정밀공학회지
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    • 제21권11호
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    • pp.69-74
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    • 2004
  • This paper presents ESPI system for the measurement of thermal expansion coefficient of STS430 up to 1,00$0^{\circ}C$ . Existing methods, strain gauge and moire have the limitation of contact to object and do not supply the coefficient up to 80$0^{\circ}C$ . There needs to measure the data up to 80$0^{\circ}C$, because heat resistant materials have high melting temperature up to 1,000'E In previous studies related to thermal strain analysis, the quantitative results have not reported by ESPI at high temperature, yet. In-plane ESPI and vacuum chamber for the reduction of air turbulence and oxidation are designed for the measurement of the coefficient up to 1,00$0^{\circ}C$ and speckle correlation fringe pattern images are processed by commercial image filtering tool-smoothing, thinning and enhancement- to obtain quantitative results, which is compared with references data. The comparison shows two data are agreed within 4.1% blow $600^{\circ}C$ however, there is some difference up to $600^{\circ}C$. Also, the incremental ratio of the coefficient is changed up to 80$0^{\circ}C$ . The reason is the phase transformation of STS430 probably begins at 80$0^{\circ}C$

저압 침탄에 의한 Ti-6Al-4V 합금의 표면 특성 개선 (Improvement of Surface Properties of Ti-6A1-4V Alloy by Low Pressure Carburizing)

  • 김지훈;박종덕;김성완
    • 열처리공학회지
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    • 제16권4호
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    • pp.191-196
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    • 2003
  • For improvement of the wear performance of Ti alloy, vacuum-carburizing technique was tried for the first time using propane atmosphere. During the low pressure carburizing carbide was formed at the surface and carbon transfer was occurred from the carbide to the matrix. It was found that: (i) surface hardness increased with the reduction of operating pressure and time; (ii) optimum hardness distribution could be obtained with the proper choice of temperature and carbon flux control; and, (iii) case depth was largely influenced not by time but by temperature. The two steps process was recommended for obtaining thick case depth and high surface hardness of Ti alloy. For the low oxygen partial pressure, it was necessary to introduce additional CO gas to the atmosphere.Grain boundary oxidation and non-uniformity could be prevented.

EFFECT OF ION BEAM ASSISTED CLEANING ON ADHESION OF ALUMINIUM TO POLYMER SUBSTRATE OF PC AND PMMA

  • Kwon, Sik-Chol;Lee, Gun-Hwan;Lee, Chuel-Yong;Gob, Han-Bum;Lim, Jun-Seop;Goh, Sung-Jin
    • 한국표면공학회지
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    • 제32권3호
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    • pp.428-432
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    • 1999
  • As metallic surface has its unique lustrous appearance and optical reflectance in visible range of light, the metallization of plastic surface has been an essential drive toward weight reduction for fuel economy and decorations in transportation industry and has been put into practiced from wet chemical-electrochemial to dry vacuum process in view of an environmental effect. Electron-beam metallization was used in this work with an aim at improving the scratchproof surface hardness of plastic substrate with metallic finish character. Thin film of Al ($1000\AA$) and $SiO_2$($7000\AA$) were metallized on substrate of PC and PMMA and the films were evaluated by pencil test for surface hardness and by cross-cut tape test for adhesion. The ion beam treatment improved around twice as hard as non-treat surface. The ion beam is effect on its hardness and adhesion to surface hardened PC substrate.

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