• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.80-81
• /
• 2005

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a sample of PRAM with thermal protected layer. We have investigated the phase transition behaviors in function of process factor including thermal protect layer. As a result, we have observed that set voltage and duration of protect layer are more improved than no protect layer.

• 반도체디스플레이기술학회지
• /
• 제19권3호
• /
• pp.61-67
• /
• 2020

This paper is to propose a hybrid memory adaptor using next-generation nonvolatile memory devices such as phase-change memory to improve the performance limitations of OpenStack-based object storage systems. The proposed system aims to improve the performance of the account and container servers for object metadata management. For this, the proposed system consists of locality-based dynamic page buffer, write buffer, and nonvolatile memory modules. Experimental results show that the proposed system improves the hit rate by 5.5% compared to the conventional system.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.120-120
• /
• 2011

Graphene is a carbon based material and it has great potential of being utilized in various fields such as electronics, optics, and mechanics. In order to develop graphene-based logic systems, graphene field-effect transistor (GFET) has been extensively explored. GFET requires supporting devices, such as volatile memory, to function in an embedded logic system. As far as we understand, graphene has not been studied for volatile memory application, although several graphene non-volatile memories (GNVMs) have been reported. However, we think that these GNVM are unable to serve the logic system properly due to the very slow program/read speed. In this study, a GVM based on the GFET structure and using an engineered graphene channel is proposed. By manipulating the deposition condition, charge traps are introduced to graphene channel, which store charges temporarily, so as to enable volatile data storage for GFET. The proposed GVM shows satisfying performance in fast program/erase (P/E) and read speed. Moreover, this GVM has good compatibility with GFET in device fabrication process. This GVM can be designed to be dynamic random access memory (DRAM) in serving the logic systems application. We demonstrated GVM with the structure of FET. By manipulating the graphene synthesis process, we could engineer the charge trap density of graphene layer. In the range that our measurement system can support, we achieved a high performance of GVM in refresh (>10 ${\mu}s$) and retention time (~100 s). Because of high speed, when compared with other graphene based memory devices, GVM proposed in this study can be a strong contender for future electrical system applications.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제17권3호
• /
• pp.363-369
• /
• 2017

Phase-change random access memory (PRAM) has been emerged as a potential memory due to its excellent scalability, non-volatility, and random accessibility. But, as the cell current is reducing due to cell size scaling, the read-sensing window margin is also decreasing due to increased variation of cell performance distribution, resulting in a substantial loss of yield. To cope with this problem, a novel adaptive read-sensing reference current generation scheme is proposed, whose trimming range and resolution are adaptively controlled depending on process conditions. Performance evaluation in a 58-nm CMOS process indicated that the proposed read-sensing reference current scheme allowed the integral nonlinearity (INL) to be improved from 10.3 LSB to 2.14 LSB (79% reduction), and the differential nonlinearity (DNL) from 2.29 LSB to 0.94 LSB (59% reduction).

• 한국정보처리학회:학술대회논문집
• /
• 한국정보처리학회 2009년도 추계학술발표대회
• /
• pp.77-78
• /
• 2009

In this paper, we study a pattern-aware write cache policy using a NAND flash memory in disk-based mobile storage systems. Our work is designed to face a mix of a number of sequential accesses and fewer non-sequential ones in mobile storage systems by redirecting the latter to a NAND flash memory and the former to a disk. Experimental results show that our policy improves the overall I/O performance by reducing the overhead significantly from a non-volatile cache over a traditional one.

• 정보보호학회논문지
• /
• 제27권5호
• /
• pp.1013-1022
• /
• 2017

최대 절전 모드는 물리 메모리의 데이터를 비휘발성 매체에 저장하였다가 시스템에 전원이 들어오면 메모리 데이터를 비휘발성 매체로부터 물리 메모리에 복구하는 기능이다. 최대 절전 모드 파일은 메모리 데이터를 정적 상태로 가지기 때문에 공격자가 이를 수집할 경우에 시스템의 물리 메모리에 있던 사용자 아이디와 패스워드 및 디스크 암호화키 등의 주요 정보들이 유출될 수 있는 위험성이 존재한다. 윈도우에서는 최대 절전 모드 파일만을 위한 보호기능을 지원하지 않기 때문에 최대 절전 모드 파일에 기록되는 메모리 데이터 내용들을 보호하는 방법이 필요하다. 본 논문에서는 최대 절전 모드 파일에 기록되는 프로세스의 메모리 데이터를 보호하기 위해서 최대 절전 모드 파일 내의 물리 메모리 데이터를 암호화하는 방법을 제안한다. 최대 절전 모드 처리 시에 메모리 데이터를 암호화하기 위해 최대 절전 모드 처리 절차를 분석하고, 최대 절전 모드 파일에 기록되는 메모리 데이터에 대한 암호화 과정이 프로세스 각각에 대해 투명하게 동작하도록 구현하였다. 실험을 통해 구현한 최대 절전 모드 파일 내 프로세스 메모리 데이터 암호화 도구는 암복호화 비용으로 약 2.7배의 오버헤드를 보였다. 이런 오버헤드는 전체 디스크 암호화 도구가 지속적으로 10% 이상의 속도저하를 유발하는 상황과 비교해 볼 때, 공격자에게 프로세스의 평문 메모리 데이터가 노출되지 않기 위해 필요한 비용으로 충분히 감내할 수 있다고 판단된다.

• 반도체디스플레이기술학회지
• /
• 제20권4호
• /
• pp.10-15
• /
• 2021

Cache bypassing schemes have been studied to remove unnecessary updating the data in cache blocks. Among them, a statistics-based cache bypassing method for asymmetric-access caches is one of the most efficient approach for non-voliatile memories and shows the lowest cache access latency. However, it is proposed under the condition of the normal cache system, so further study is required for the hybrid cache architecture. This paper proposes a novel cache bypassing scheme, called hybrid bypassing block selector. In the proposal, the new model is established considering the SRAM region and the non-volatile memory region separately. Based on the model, hybrid bypassing decision block is implemented. Experiments show that the hybrid bypassing decision block saves overall energy consumption by 21.5%.

• 한국전자현미경학회:학술대회논문집
• /
• 한국현미경학회 2005년도 제36차 추계학술대회 및 제4회 HVEM 이용자 워크샵
• /
• pp.80-84
• /
• 2005

• 한국정보과학회:학술대회논문집
• /
• 한국정보과학회 2007년도 한국컴퓨터종합학술대회논문집 Vol.34 No.1 (A)
• /
• pp.256-257
• /
• 2007

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제36회 동계학술대회 초록집
• /
• pp.176.1-176.1
• /
• 2009