• The Magazine of the IEIE
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• v.18 no.9
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• pp.45-52
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• 1991

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.5
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• pp.791-796
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• 2017

In this study, we investigated the influence of the fabrication process of stacked capacitors on the cell capacitance by using Load Lock (L/L) LPCVD system for dielectric thin film of DRAM capacitor. As a result, it was confirmed that the capacitance difference of about 3-4 fF is obtained by reducing the effective thickness of the oxide film by about $6{\AA}$ compared to the conventional non-L/L device. In addition, Cs was found to be about 3-6 fF lower than the calculated value, even though the measurement range of the thickness of the nitride film as an insulating film was in a normal management range. This is because the node poly FI CD is managed at the upper limit of the spec, resulting in a decrease in cell surface area, which indicates a Cs reduction of about 2fF. Therefore, it is necessary to control the thickness of insulating film and CD management within 10% of the spec center value in order to secure stable Cs.

• Journal of Plant Biotechnology
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• v.8 no.1
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• pp.37-41
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• 2006

In vitro mass multiplication of Vanilla planifolia was investigated using node as explant. Multiple shoots were developed in MS medium supplemented with $2.0mgl^{-1}$ 6-benzylaminopurine and $1.0mgl^{-1}$ $\alpha$-naphthalene acetic acid. Multiple shoots were maintained for 6-T weeks with regular subculturing at the end of $3^{rd}$ week onto fresh medium. The maximum number of shoots at the rate of 12.8 per node segment was achieved over a period of four weeks. The elongated shoots were separated from the shoot clusters and were transferred onto half strength MS medium supplemented with indole-3-acetic acid ($1.0mgl^{-1}$) over a period of 28 days for induction of roots. The development of roots was observed on $7^{th}$ day of incubation. The in vitro raised plantlets were transferred to poly-cups, covered with polyethylene sheets and maintained under shade net for 25 days for hardening. Finally these plants were transferred to field and recorded that 85 % of tissue cultured plants were survived. From the present study, a simple and efficient micropropagation protocol was developed for Vanilla planifolia using single node segments as explants.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.159-165
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• 2016

Recently, active efforts are being made for future Si CMOS technology by various researches on emerging devices and materials. Capability of low power consumption becomes increasingly important criterion for advanced logic devices in extending the Si CMOS. In this work, a junctionless field-effect transistor (JLFET) with ultra-thin poly-Si (UTP) channel is designed aiming the sub-10-nm technology for low-power (LP) applications. A comparative study by device simulations has been performed for the devices with crystalline and polycrystalline Si channels, respectively, in order to demonstrate that the difference in their performances becomes smaller and eventually disappears as the 10-nm regime is reached. The UTP JLFET would be one of the strongest candidates for advanced logic technology, with various virtues of high-speed operation, low power consumption, and low-thermal-budget process integration.

• Archives of Plastic Surgery
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• v.42 no.1
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• pp.4-10
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• 2015

Mammary implants marketed by Poly Implant Proth$\grave{e}$se (PIP) were found to contain industrial grade silicone and this caused heightened anxiety and extensive publicity regarding their safety in humans. These implants were used in a large number of patients worldwide for augmentation or breast reconstruction. We reviewed articles identified by searches of Medline, PubMed, Embase, and Google Scholar databases up to May 2014 using the terms: "PIP", "Poly Implant Proth$\grave{e}$se", "breast implants" and "augmentation mammoplasty" "siloxanes" or "silicone". In addition the websites of regulating bodies in Europe, USA, and Australia were searched for reports related to PIP mammary implants. PIP mammary implants are more likely to rupture than other implants and can cause adverse effects in the short to the medium term related to the symptoms of rupture such as pain, lumps in the breast and axilla and anxiety. Based on peer-reviewed published studies we have calculated an overall rupture rate of 14.5% (383/2,635) for PIP implants. However, there is no evidence that PIP implant rupture causes long-term adverse health effects in humans so far. Silicone lymphadenopathy represents a foreign body reaction and should be treated conservatively. The long-term adverse effects usually arise from inappropriate extensive surgery, such as axillary lymph node dissection or extensive resection of breast tissue due to silicone leakage.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.183-189
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• 1992

The characteristics of N/O(SiOz/SisN4) film on WSi2 are compared with storage node Poly-Si. Leakage current and breakdown voltage are improved and storage capacitance is decreased. The oxidation rate of WSiz is more rapid than polycrystalline silicon. Thus the thick bottom oxide on the WSiz causes to the decrease of capacitance. The out diffusion of dopant impurity in polycrystalline silicon through the silicide leads to the formation of a depletion region in the polycrystalline silicon and the decrease of depletion capacitance. That results in the decrease of the overall storage capacitance.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2395-2402
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• 2013

An active-RC channel selection filter (CSF) with the bandwidth of 40MHz and the improved linearity is proposed in this paper. The proposed CSF is the fifth butterworth filter which consists of a first order low pass filter, two second order low pass filters of a biquad architecture, and DC feedback circuit for cancellation of DC offset. To improve the linearity of the CSF, a body node of a MOSFET for a switch is connected to its source node. The bandwidth of the designed CSF is selected to be 10MHz, 20MHz and 40MHz and its voltage gain is controlled by 6 dB from 0 dB to 24 dB. The proposed CSF is designed by using 40nm 1-poly 8-metal CMOS process with a 1.2V. When the designed CSF operates at the bandwidth of 40 MHz and voltage gain of 0 dB, the simulation results of OIP3, in-band ripple, and IRN are 31.33dBm, 1.046dB, and 39.81nV/sqrt(Hz), respectively. The power consumption and layout area are $450{\times}210{\mu}m^2$ and 6.71mW.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.12
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• pp.13-22
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• 1998

In this paper, we propose a high-performance BICS(built-in current sensor) which is fabricated in 0.8${\mu}{\textrm}{m}$ single-poly two-metal process for IDDQ testing of CMOS VLSI circuit. The CUT(circuit under test) is 4-bit full adder with a bridging fault. Using two nMOSs that have different size, two bridging faults that have different resistance values are injected in the CUT. And controlling a gate node, we experimented various fault effects. The proposed BICS detects the faulty current at the end of the clock period, therefore it can test a CUT that has a much longer critical propagation delay time and larger area than conventional BICSs. As expected in the HSPICE simulation, experimental results of fabricated chip demonstrated that the proposed BICS can exactly detect bridging faults in the circuit.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.463-463
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• 2012

ITRS (international technology roadmap for semiconductors)에 따르면 MOS(metal-oxide-semiconductor)의 CD (critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/$SiO_2$를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두된다고 보고하고 있다. 일반적으로 high-k dielectric를 식각시 anisotropic 한 식각 형상을 형성시키기 위해서 plasma를 이용한 RIE (reactive ion etching)를 사용하고 있지만 PIDs (plasma induced damages)의 하나인 PIED (plasma induced edge damage)의 발생이 문제가 되고 있다. PIED의 원인으로 plasma의 direct interaction을 발생시켜 gate oxide의 edge에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 high-k dielectric의 식각공정에 HDP (high density plasma)의 ICP (inductively coupled plasma) source를 이용한 원자층 식각 장비를 사용하여 PIED를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. One-monolayer 식각을 위한 1 cycle의 원자층 식각은 총 4 steps으로 구성 되어 있다. 첫 번째 step은 Langmuir isotherm에 의하여 표면에 highly reactant atoms이나 molecules을 chemically adsorption을 시킨다. 두 번째 step은 purge 시킨다. 세 번째 step은 ion source를 이용하여 발생시킨 Ar low energetic beam으로 표면에 chemically adsorbed compounds를 desorption 시킨다. 네 번째 step은 purge 시킨다. 결과적으로 self limited 한 식각이 이루어짐을 볼 수 있었다. 실제 공정을 MOS의 high-k dielectric에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU (North Carolina State University) CVC model로 구한 EOT (equivalent oxide thickness)는 변화가 없으면서 mos parameter인 Ion/Ioff ratio의 증가를 볼 수 있었다. 그 원인으로 XPS (X-ray photoelectron spectroscopy)로 gate oxide의 atomic percentage의 분석 결과 식각 중 발생하는 gate oxide의 edge에 trap의 감소로 기인함을 확인할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.287-287
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• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.