• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1381-1387
• /
• 2018

One dimensional (1D) grating has been fabricated (using focused ion beam) on 50 nm gold (Au) film deposited on higher refractive index Gallium phosphate (GaP) substrate. The sub-wavelength periodic metal nano structuring enable to couple photon to couple with the surface plasmons (SPs) excited by them. These grating devices provide the efficient control on the SPs which propagate on the interface of noble metal and dielectric whose frequency is dependent on the bulk electron plasma frequency of the metal. For a fixed periodicity (${\Lambda}=700 nm$) and slit width (w = 100 nm) in the grating device, the efficiency of SPP excitation is about 40% compared to the transmission in the near-field. Efficient coupling of SPs with photon in dielectric provide field localisation on sub-wavelength scale which is needed in Heat Assisted Magnetic recording (HAMR) systems. The GaP is also used to emulate Vertical Cavity Surface emitting laser (VCSEL) in order to provide cheaper alternative of light source being used in HAMR technology. In order to understand the underlying physics, far-and near-field results has been compared with the modelling results which are obtained using COMSOL RF module. Apart from this, grating devices of smaller periodicity (${\Lambda}=280nm$) and slit width (w = 22 nm) has been fabricated on GaP substrate which is photoluminescence material to observe amplified spontaneous emission of the SPs at wavelength of 805 nm when the grating device was excited with 532 nm laser light. This observation is unique and can have direct application in light emitting diodes (LEDs).

• Journal of Industrial and Engineering Chemistry
• /
• v.67
• /
• pp.28-51
• /
• 2018

Graphitic carbon nitride ($g-C_3N_4$) as a fascinating visible light active semiconductor photocatalyst has medium band gap, non-toxic nature, stable chemical structure and high thermal stability. Recently, intensive researches are focused on photocatalytic activity of $g-C_3N_4$ for wastewater treatment. This review demonstrates latest progress in fabrication of graphitic carbon nitride $C_3N_4$ incorporated nanocomposite to explore photocatalytic ability for water purification. The $g-C_3N_4$-based nanocomposites were categorized as $g-C_3N_4$ metal-free nanocomposite, noble metals/$g-C_3N_4$ heterojunction, non-metal doped $g-C_3N_4$, transition and post transition metal based $g-C_3N_4$ nanocomposite. Apart from fabrication methods, we emphasized on elaborating the mechanism of activity enhancement during photocatalytic process.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.18 no.5
• /
• pp.708-715
• /
• 2017

Recently, in order to meet the stricter emission regulations, the proportion of after-treatments for vehicles and vessels has been increasing gradually. The objective of this study is to investigate the improvement of $CH_4$ reduction ability of natural gas oxidation catalyst (NGOC), which reduces toxic gases emitted from CNG buses. Thirteen NGOCs were prepared, and the conversion performance of noxious gases according to the type of supports, the loading amount of noble metal, and surfactant and aging were determined. Support Zeolite supported on No. 3 $NGOC(1Pt-1Pd-3MgO-3CeO_2/(46TiO_2+23Al_2O_3+23Zeolite)$ is an anionic alkali metal/earth metal component that improved the oxidation reactivity between CO and NO and noble metal dispersion, and thus enhanced the $CH_4$ reduction ability. As the loading amount of Pd, a noble metal with a high selectivity to $CH_4$, was increased, the number of reaction sites was increased and the ability to reduce $CH_4$ was improved. No. 11 $NGOC(1Pt-1Pd-3MgO-3CeO_2/(Z20+Al80)$(pH=8.5), to which nitrate surfactant had been added, exhibited well dispersed catalyst particles with no agglomeration and improved the $CH_4$ reduction ability by 5-15%. The $NGOC(2Pt-2Pd-3Cr-3MgO/90Al_2O_3)$(48h aging), which was mildly thermal aged for 48h, increased the $CH_4$ reduction ability to about 10% or less as compared with No. 12 NGOC(Fresh).

• Journal of Sensor Science and Technology
• /
• v.22 no.2
• /
• pp.130-135
• /
• 2013

This study proposed a noble process to fabricate TSV (Through Silicon Via) structure which has lower cost, shorter production time, and more simple fabrication process than plating method. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process. The via hole was $100{\mu}m$ in diameter and $400{\mu}m$ in depth. A dielectric layer of $SiO_2$ was formed by thermal oxidation on the front side wafer and via hole side wall. An adhesion layer of Ti and a seed layer of Au were deposited. Soldering process was applied to fill the via holes with solder paste and metal powder. When the solder paste was used as via hole metal line, sintering state and electrical properties were excellent. However, electrical connection was poor due to occurrence of many voids. In the case of metal powder, voids were reduced but sintering state and electrical properties were bad. We tried the via hole filling process by using mixing solder paste and metal powder. As a consequence, it was confirmed that mixing rate of solder paste (4) : metal powder (3) was excellent electrical characteristics.

• Ceramist
• /
• v.23 no.2
• /
• pp.211-230
• /
• 2020

Perovskite-type oxides with the nominal composition of ABO₃ can exsolve the B-site transition metal upon the controlled reduction. In this exsolution process, the transition metal emerges from the oxide lattice and migrates to the surface at which it forms catalytically active nanoparticles. The exsolved nanoparticles can recover back to the bulk lattice under oxidation treatment. This unique regeneration character by the redox treatment provides uniformly dispersed noble metal nanoparticles. Therefore, the conventional problem of traditional impregnated metal/support, i.e., sintering during reaction, can be effectively avoided by using the exsolution phenomenon. In this regard, the catalysts using the exsolution strategy have been well studied for a wide range of applications in energy conversion and storage devices such as solid oxide fuel cells and electrolysis cells (SOFCs and SOECs) because of its high thermal and chemical stability. On the other hand, although this exsolution strategy can also be applied to gas phase reaction catalysts, it has seldomly been reviewed. Here, we thus review recent applications of the exsolution catalysts to the gas phase reactions from the aspects of experimental measurements, where various functions of the exsolved particles were utilized. We also review non-perovskite type metal oxides that might have exolution phenomenon to provide more possibilities to develop higher efficient catalysts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05b
• /
• pp.74-77
• /
• 2002

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

• Journal of the Korean Society of Fisheries and Ocean Technology
• /
• v.30 no.4
• /
• pp.312-319
• /
• 1994

Recently, with the rapid development in the industries such as an iron mill and chemical plants, there is enlarged by the use of the piping. Sepecially, the piping connected with a fluid, if it is increase the speed of running fluid, ought to generate cavitation phenomenon with unbalanced pressure. So, the cavitation phenomenon cause serious damage of the piping, because it generate erosion and corrosion in the piping. In this study, the steel pipe piping water (SPPW) and SPPW on weldment were tested by using of cavitation-erosion test apparatus with nozzle and were investigated under the marine environment of liquid. (specific resistance : 25 $Omega$. cm) The main results obtained are as follows : 1) The total weight loss and weight loss rate of affected zone of weldment by corrosion-erosion in the sea water are more increased than that of base metal. 2) The electrode potential by corrosion-erosion in the sea water becomes less noble than that of base metal, and current density is more increased. 3) As time goes by, the total weight loss and weight loss rate by cavitation erosion-corrosion in air-liquid 2 phase flow become more increased then those in only liquid solution. but these values turn to be decreased.

• Korean Journal of Materials Research
• /
• v.16 no.5
• /
• pp.285-291
• /
• 2006

Copper powders have been widely used in electrically conductive coatings, electrode materials et al. and are very prospective since they are cheaper than noble metal powders such as silver or palladium. In this study, copper powders for metal filler of EMI shielding have been prepared using a solvothermal process from $CuSO_4$, NaOH, Glucose, mixed solvent ($H_2O$: Ethanol) and hydrazine which was used as a reducing agent at various reaction conditions. The prepared copper powders showed finely dispersed spherical shape without agglomerate, uniform morphology, narrow size distribution, high purity and were about 400-700 nm in size. The prepared powders were characterized using XRD, SEM, TGA, XPS, particle size measurement and EMI shielding efficiency.

• Proceedings of the KIEE Conference
• /
• 1989.11a
• /
• pp.122-126
• /
• 1989

A composite polycide struoture consisting of refractory metal and noble metal silicide film on top of polysilicon bas been considered as a replacement for polysilicon as a gate electrode and Interconnect line in MOSFET integrated circuits. In this paper presents divice characteristics of NOS with $TiSi_2/n^+$polyoide and $CoSi_2/n^+$polycide gate. Also, evaporated Ti,Co films on polysilicon has been annealed by RTA and furnace annealing in $N_2$ abient at temperature of $400^{\circ}C-1000^{\circ}C$. The Ti-,Co-silioide formation is characterized by 4-point probe, silicide growth rate and Its reproductivity bas been examined by SEM.

• Journal of Welding and Joining
• /
• v.13 no.3
• /
• pp.55-64
• /
• 1995

Metallizing method on ceramic surface is one of the compositing technology of ceramics and metal. The purpose of this study is to make HIC (Hybrid Intergrated Circuit) with copper metallizing method of which copper layer is formed on ceramic substrate by firing in atmosphere in lieu of conventional hybrid microcircuit systems based on noble metal. Metallizing pastes were made from various copper compounds such as Cu$_{2}$O, CuO, Cu, CuS and kaolin. And the screen printing method was used. The characteristics of metallized copper layers were analyzed through the measurement of sheet resistance, SEM, and EDZX. The results obtainted are summarized as follows; 1. The copper metallizing layers on ceramic surface can be formed by firing in air. 2. The metallized layer using Cu$_{2}$O paste showed the smallest sheet resistance among a group of copper chemical compounds. And optimum metallizing conditions are 15 minutes of firing time, 1000.deg.C of firig temperature, and 3 minutes of deoxidation time. 3. The results of EDAX analysis showed mutual diffusion of Cu and Al. 4. The kaolin plays a important role of deepening the penetration of Cu to $Al_{2}$O$_{3}$ ceramics. But if the kaolin content is too much, sheet resistance increases and copper metallizing layer becomes brittle.