• ETRI Journal
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• v.34 no.5
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• pp.706-712
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• 2012

In previous work, novel maskless bumping and no-flow underfill technologies for three-dimensional (3D) integrated circuit (IC) integration were developed. The bumping material, solder bump maker (SBM) composed of resin and solder powder, is designed to form low-volume solder bumps on a through silicon via (TSV) chip for the 3D IC integration through the conventional reflow process. To obtain the optimized volume of solder bumps using the SBM, the effect of the volumetric mixing ratio of resin and solder powder is studied in this paper. A no-flow underfill material named "fluxing underfill" is proposed for a simplified stacking process for the 3D IC integration. It can remove the oxide layer on solder bumps like flux and play a role of an underfill after the stacking process. The bumping process and the stacking process using the SBM and the fluxing underfill, respectively, for the TSV chips are carefully designed so that two-tier stacked TSV chips are sucessfully stacked.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.45-50
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• 2021

As the difficulty of flip chip products increases, there is a growing interest in the material of flux, which is safe from the solder wetting and reliability. In the case of no clean flux, there is merit in terms of process efficiency because there is no cleaning process. But Cu migration and delamination can be occurred if the residue remains after the reflow process. In this study, major element materials, solvent and activator, are changed and confirmed effect of non-wet and reliability in the package environment. Stability of materials were secured through storage stability evaluation, and we found out non-wet zero materials through the application of two types of solvent and activator with different boiling point and the increase of activator content. After reliability test, no delamination was found in the plane analysis, which secured the final composition of low residue flux.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.554-559
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• 2008

Most of vehicle manufacturers have applied exhaust gas recirculation (EGR) system to the development of diesel engines in order to obtain the high thermal efficiency without $NO_X$ and Particulate Matter (PM) emitted from the engine. EGR system, which reflow a cooled exhaust gas from vehicles burning diesel as fuel to a combustion chamber of engine, has been used to solve this problem. In order to confirm the safety of the EGR system, finite element analysis was carried out. The safety of EGR system against temperature variation in the shell and tubes was evaluated through the thermal and structural analysis, and the modal analysis using ANSYS was also performed. Finally, the performance of EGR system was verified through the experiment and numerical simulation using effectiveness-NTU method. Program for the estimation of the heat exchange efficiency of the EGR system with regard to the dimpled tube shape was developed.

• Design & Manufacturing
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• v.13 no.4
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• pp.10-16
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• 2019

Semiconductor chip is bonded to the substrate by melting solder bumps. In general, the chip bonding is applied by a Reflow process or a Thermo-Compression(TC) bonding process. In this paper, we introduce a Laser Assisted Thermo-Compression bonding (LATCB) process to improve the anxiety of the existing process(Reflow, TC bonding). In the LATCB process, the chip is bonded to the substrate by irradiating a laser with a uniform energy density in the same area as the chip to melt only the solder bumps and press the chip with a Transparent Compression Module (TCM). The TCM consists of a fused silica header for penetrating the laser and pressurizing the chip, and a piezoelectric actuator (P.A.) coupled to both ends of the header for micro displacement control of the header. In addition, TCM is a structure that can pressurize the chip and deliver it to the chip and solder bumps without losing the energy of the laser. Fused silica, which is brittle, is vulnerable to deformation, so the header may be damaged when an external force is applied for pressurization or a displacement differenced is caused by piezoelectric actuators at both ends. On the other hand, in order to avoid interference between the header and the adjacent chip when pressing the chip using the TCM, the header has a notch at the bottom, and breakage due to stress concentration of the notch is expected. In this study, the thickness and notch length that the header does not break when the external force (500 N) is applied to both ends of the header are optimized using structural analysis and Coulomb-Mohr failure theory. In addition, the maximum displacement difference of the P.A.s at both ends where no break occurred in the header was derived. As a result, the thickness of the header is 11 mm, and the maximum displacement difference between both ends is 8 um.

• Polymer(Korea)
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• v.31 no.2
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• pp.148-152
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• 2007

The prototype of color fitters for the liquid crystal displays (LCD) using cholesteric liquid crystal monomers was produced. Cholesteric liquid crystal is characterized by the unique optical features of selective reflection, which is due to the helical twisting structures of LCs comparable to the wavelength of the incident light under certain conditions of substrate treatment. In the results of the experiment, cholesteric films for red, green, and blue light reflections respectively were produced and the viewing angle dependence of these films were investigated. Reflective light of red and green films shifted to shorter wavelength regions as viewing angle becomes greater, but blue one shifted very little. Periodic micrometer-sized half-spherical photoresist formed by thermal reflow method after photo-lithography was patterned on glass substrates. The viewing angle dependence of reflective light colors of red, green, and blue films on the patterned substrates compared with those on no patterned substrates was investigated. We could confirm the dependences were much smaller on the patterned substrates by bare eyes and Lab-color coordination methods qualitatively.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.10-15
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• 2016

In this paper, novel ball grid array (BGA) interconnection process using solderable anisotropic conductive adhesives (SACAs) with low-melting-point alloy (LMPA) fillers have been developed to enhance the processability in the conventional capillary underfill technique and to overcome the limitations in the no-flow underfill technique. To confirm the feasibility of the proposed technique, BGA interconnection test was performed using two types of SACA with different LMPA concentration (0 and 4 vol%). After the interconnection process, the interconnection characteristics such as morphology of conduction path and electrical properties of BGA assemblies were inspected and compared. The results indicated that BGA assemblies using SACA without LMPA fillers showed weak conduction path formation such as solder bump loss or short circuit formation because of the expansion of air bubbles within the interconnection area due to the relatively high reflow peak temperature. Meanwhile, assemblies using SACA with 4 vol% LMPAs showed stable metallurgical interconnection formation and electrical resistance due to the favorable selective wetting behavior of molten LMPAs for the solder bump and Cu metallization.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.37-45
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• 2008

In this study, reliabilities of Cu (60 um)/SnAg (20 um) double-bump flip chip assemblies were investigated for the flip chip interconnections on organic substrates with 100 um pitch. After multiple reflows at $250^{\circ}C\;and\;280^{\circ}C$, bump contact resistances were almost same regardless of number of reflows and reflow temperature. In the high temperature storage test, there was no bump contact resistance change at $125^{\circ}C$ up to 2000 hours. However, bump contact resistances slightly increased at $150^{\circ}C$ due to Kirkendall voids formation. In the electromigration test, Cu/SnAg double-bump flip chip assemblies showed no electromigration until about 600 hours due to reduced local current density. Finally, in the thermal cycling test, thermal cycling failure mainly occurred at Si chip/Cu column interface which was found out the highest stress concentration site in the finite element analysis. As a result, Al pad was displaced out under thermal cycling. This failure mode was caused by normal compressive strain acting Cu column bumps along perpendicular direction of a Si chip.