• Korean Journal of Materials Research
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• v.16 no.7
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• pp.401-407
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• 2006

ZnO is well-known as a promising material for optical communication systems and electronic displays. ZnO:Er thin films were deposited on c-plane sapphire substrates by rf magnetron sputtering, and the effects of sputtering parameters and the annealing conditions on the luminescence in the visible range were investigated. Luminescent properties depended on the crystallinity of films and annealing atmosphere. Highly c-axis oriented ZnO:Er films showed a strong emission band at 465 nm and a weak emission at 525 nm due to the energy transition of $^{4}I_{15/2}-^{4}F_{5/2}\;and\;^{4}I_{15/2}-^{2}H_{11/2}$, respectively. ZnO:Er thin films annealed at air atmosphere were superior to those annealed in $H_2$ in photoluminescence intensity.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.1-8
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• 2017

Two different fluorine-doped tin oxide (FTO)-coated glass substrates were investigated to find better suitability for CdTe solar cells. Substrate A consisted of FTO (300 nm)/$SiO_2$ (24 nm)/intrinsic $SnO_2$ (30 nm)/borosilicate glass (2.2 mm), and substrate B consisted of FTO (700 nm)/intrinsic $SnO_2$ (30nm)/borosilicate glass (1.8 mm). The overall thickness of the FTO/glass substrates was about 2.5 mm. The total light transmittance of substrate B was much higher than that of substrate A throughout the whole spectral region, even though the thickness of the FTO in substrate B was twice larger than that of the FTO in the substrate A. The short-circuit current greatly increased in substrate B and the external quantum efficiency (EQE) increased over the whole wavelength range. This study shows that the diffuse optical transmittance played a key role in the large EQE value in the blue wavelength region, and the direct transmittance played a key role in the large EQE value in the red wavelength region. The higher transmittance is due to the rough surface generated by the thicker FTO on glass. The conversion efficiency of the CdTe solar cell increased from 12.4 to 15.1% in combination of rough FTO substrate and Cu solution back contact.

• Journal of IKEEE
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• v.22 no.1
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• pp.209-212
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• 2018

In this work, we developed P(VDF-TrFE) organic/ferroelectric material based metal-ferroelectric-metal (MFM) capacitors in order to improve the switching characteristics of gallium nitride (GaN) heterojunction field-effect transistors (HFET). The 27 nm-thick P(VDF-TrFE) MFM capacitors exhibited about 60 ~ 96 pF capacitance with a polarization density of $6{\mu}C/cm^2$ at 4 MV/cm. When the MFM capacitor was connected in series with the gate electrode of GaN HFET, the subthreshold slope decreased from 104 to 82 mV/dec.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.455-460
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• 2008

In recent years, there has been highly interestedin pulsed laser deposition (PLD) method for fabrication of the organic thin films, as an alternative to conventional fabrication method such as vacuum evaporation and spin coating techniques. In this study, organic thin films of $Alq_3$ (aluminato-tris-8-hydroxyquinolate) and TPD for organic light emitting diodes (OLED) were deposited by PLD using KrF excimer ($\lambda$=278 nm) laser in nitrogen atmosphere. Deposited films were evaluated by photoluminescence(PL), Fourier-transform Infrared Spectroscopy (FT-IR) to study the effect of the laser and $N_2$ atmosphere parameters on the structural and optical properties.

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.352-358
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• 1995

Measurements of the Faraday rotation and magnetization of terbium-doped Hoya FR5 glass and cerium-doped Hoya FR4 glass have been made as a function of temperature T in the range 4.2 K -10 K and of magnetic field H of up to 80 kG at the $Ar^+$ laser wavelength of 514.5nm. The saturations of magnetization and Faraday rotation above H/T> $5kG.K^{-1}$ can be analyzed by the quantum theory of paramagnetism. Calculated parameters show that the large Verdet constant of $Ce^{3+}$ glass is due to the effective $4f\rightarrow5d$ electric dipole transition effect and that of $Tb^{3+}$ glass is due to the magnetization effect.effect.

• Korean Journal of Materials Research
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• v.28 no.6
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• pp.355-360
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• 2018

$LuNbO_4:0.2Yb^{3+},xTm^{3+}$ powders were prepared using a solid-state reaction process. The effects of the amount of Tm on up-conversion(UC) and down-conversion(DC) luminescence properties are investigated. X-ray diffraction patterns confirm that $Yb^{3+}$ and $Tm^{3+}$ ions are successfully incorporated into Lu sites. Under 980 nm excitation, the UC spectra of the powders predominantly exhibit strong near-infrared emission bands that peak at 805 nm, whereas weak 480 nm emission bands are observed as well. The emission bands are assigned to the $^1G_4{\rightarrow}^3H_6$ (480 nm) and 3 $^3H_4{\rightarrow}^3H_6$ (805 nm) transitions of the $Tm^{3+}$ ions via an energy transfer from $Yb^{3+}$ to $Tm^{3+}$; two- and three-photon UC processes are responsible for the 805 and 480 nm emissions, respectively. The DC emission spectra exhibit blue emission ($^1D_2{\rightarrow}^3F_4$) of $Tm^{3+}$ at 458 nm. The amount of Tm affects the emission intensity with the strongest emissions at x = 0.007 and 0.02 for the UC and DC luminescence, respectively. The results demonstrate that $LuNbO_4:Yb^{3+},Tm^{3+}$ phosphors are suitable for bio-applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.317-317
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• 2014

본 연구에서는 이종접합 태양전지의 효율 증가를 위해서 초박 두께의 LiF 유전체 층을 후면에 증착하였다. 유전체 LiF층은 금속 전극의 Schottky barrier와 일 함수를 dipole moment를 통해 낮추게 되고 더 높은 전하 주입을 유도하여 장파장대에서 양자 효율을 높인다. 최적화된 20nm 두께의 LiF층은 후면에 ITO가 증착된 이종접합 태양전지와 ITO가 없는 태양전지에 각각 적용하였다. ITO층이 없는 이종접합 태양전지는 690 mV의 개방전압, 33.62 mA/cm2의 단락전류와 17.13 %의 효율을 보였으며 ITO층이 증착된 태양전지에서는 688 mV의 개방전압, 32.73 mA/cm2의 단락전류 그리고 16.83%의 효율을 보였다. QE와 단락전류에서의 개선은 장파장대에서의 광전하 수집이 기인한 것으로 보인다.

• Journal of Microbiology and Biotechnology
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• v.19 no.10
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• pp.1206-1212
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• 2009

Growth rates, photosystem II photosynthesis, and the levels of chlorophyll $\alpha$ and secondary metabolites of Chlorella ovalis were estimated to determine if they were enhanced by the addition of swine urine (BM) or cow compost water (EP) that had been fermented by soil bacteria to deep seawater (DSW) in an attempt to develop media that enabled batch mass culture at lower costs. Growth of C. ovalis in f/2, f/2-EDTA+BM60%, DSW+BM30%, and DSW+EP60% was enhanced and maintained in the log phase of growth for 16 days. The cell densities of C. ovalis in DSW+EP60% ($4.1{\times}10^6$ Cells/ml) were higher than those of f/2 ($2.9{\times}10^6$ Cells/ml), f/2-E+BM60% ($3.7{\times}10^6$ Cells/ml), and DSW+BM30% ($2.7{\times}10^6$ Cells/ml). The growth rate was also more favorable for C. ovalis cultured in DSW+EP60% ($0.15\;day^{-1}$) than that of C. ovalis cultured in the control medium (f/2) ($0.12\;day^{-1}$). Furthermore, the chlorophyll a concentration of C. ovalis cultured in DSW+EP60% (4.56 mg/l) was more than 2-fold greater than that of C. ovalis cultured in f/2 (2.35 mg/l). Moreover, the maximal quantum yields of photo system II at 470 nm (Fv/Fm) were significantly higher in organisms cultured at f/2-E+BM60% (0.53) and DSW+EP60% (0.52) than in the other treatment groups. Finally, Fourier transformation infrared (FT-IR) spectroscopy revealed that C. ovalis grown in DSW+EP60% had more typical peaks and various biochemical pool shifts than those grown in other types of media. Taken together, the results of this study indicate that the use of DSW+EP60% to culture C. ovalis can reduce maintenance expenses and promote higher yields.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.52-61
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• 2003

$SrBi_2Ta_2O_9(SBT)$and$ZrO_2$thin films for MFIS structure(Metal-Ferroelectric-Insulator-Semiconductor) were deposited by RF magnetron sputtering method. In order to investigate the effect of heat treatment of insulator layers and MFIS structure, the insulator layers were heat treated from $550^{circ}C;to; 850^{\circ}C$in conventional furnace or RTA furnace under$O_2$and Ar ambient, respectively. After then, C-V characteristics and leakage current were measured. The capacitor with 20 nm thick $ZrO_2$layer treated at RTA$750^{circ}C;in;O_2$ atmosphere had the largest memory window. The C-V and leakage current characteristics of the$Pt/SBT(260nm)/ZrO_2(20nm)/Si$structure were better than those of$Pt/SBT(260nm)/Si$ structure. These results showed that$ZrO_2$films took a role of buffer layer effectively.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.469-473
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• 2014

$SrSnO_3$ phosphor powders were synthesized with two different contents of activator ions $Eu^{3+}$ and $Tb^{3+}$ using the solid-state reaction method. The structural, morphological, and optical properties of the phosphors were investigated using X-ray diffractometry, field-emission scanning electron microscopy, and fluorescence spectrophotometry, respectively. All the phosphors showed a cubic structure, irrespective of the type and the content ratio of activator ions. For $Eu^{3+}$-doped $SrSnO_3$ phosphors, the intensity of the 620 nm red emission spectrum resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ was stronger than that of the 595 nm orange emission signal due to the $^5D_0{\rightarrow}^7F_1$ transition in the range 0.01-0.05 mol of $Eu^{3+}$, but the ratio of the intensity was reversed in the range 0.10-0.20 mol of $Eu^{3+}$. The variation in the emission intensity indicates that the site symmetry of the $Eu^{3+}$ ions around the host crystal was changed from non-inversion symmetry to inversion. For the $Tb^{3+}$-doped $SrSnO_3$ phosphors under excitation at 281 nm, one strong green emission band at 550 nm and several weak bands were observed. These results suggest that the optimum red and green emission signals can be realized when the activator ion content for $Eu^{3+}$- or $Tb^{3+}$-doped $SrSnO_3$ phosphors is 0.20 mol and 0.15 mol, respectively.