• Korean Chemical Engineering Research
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• 제50권4호
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• pp.639-645
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• 2012

Isophorone diisocyanate, polycarbonate diol, dimethylol propionic acid를 출발물질로 하여 제조된 폴리우레탄 prepolymer의 미반응 NCO 기를 실란커플링제인 aminopropyl trietoxysilane (APS)로 capping시켜 수분산 폴리우레탄(waterborne polyurethane dispersion, PUD)을 합성하였다. 그 후 이 PUD에 아크릴 단량체인 2-hydroxyethyl methacrylate와 methyl methacrylate의 혼합물을 첨가하고 중합시켜 silylated acrylic polyurethane dispersion을 제조하였다. 동적 빛 산란법에 의해 측정된 silylated acrylic polyurethane dispersion의 평균 직경은 APS 첨가량이 증가됨에 따라 39.0 nm에서 399.8 nm로 크게 증가하였다. 또한 코팅 도막의 연필경도는 APS의 첨가량이 증가되면서 B에서 F로 향상되었다.

• Advances in nano research
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• 제7권4호
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• pp.233-240
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• 2019

The present research work reports in-vitro anti-cancer activity of biologically synthesized ZnO nanoparticles (ZnO NPs) against human carcinoma cells viz SCC-40, SK-MEL-2 and SCC-29B using Sulforhodamine-B (SRB) Assay. ZnO NPs were synthesized by a unique and novel biological route using Temperature-gradient phenomenon where the extract of combination of Catharanthus roseus (L.) G. Don (C. roseus), Azadirachta indica (A. indica), Ficus religiosa (F. religiosa) and NaOH solution were used as synthesis medium. The morphology of the ZnO NPs was characterized by Transmission Electron Microscopy (TEM). TEM images reveal that particle size of the samples reduces from 76 nm to 53 nm with the increase in reaction temperature and 68 nm to 38 nm with the increase in molar concentration of NaOH respectively. XRD study confirms the presence of elements and reduction in crystallite size with increase in reaction temperature and NaOH concentration. The diffraction peaks show broadening and a slight shift towards lower Bragg angle ($2{\theta}$) which represents the reduction in crystallite size as well as presence of uniform strain. The FTIR spectra of the extract show transmittance peak fingerprint of Zn-O bond and presence of bioactive molecules These NPs exhibit inhibition greater than 50% for SCC-40, SK-MEL-2 and SCC-29B cell lines and more than 50% cell kill for SCC-29B cells at concentrations < $80{\mu}g/ml$. Nanoparticles with smallest size have shown better anti-cancer activity and peculiar cell-selectivity. The combination of extracts of these plants with ZnO NPs can be used in targeted drug delivery as an effective anti-cancer agent, a potential application in cancer treatment.

• Bulletin of the Korean Chemical Society
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• 제33권11호
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• pp.3645-3650
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• 2012

Two new blue emitting cationic iridium(III) complexes with two substituted 2-phenlypyridine ligands as main ligands and one 2,2'-biimidazole as an ancillary ligand, $[(L1)_2Ir(biim)]Cl$ (1) and $[(L2)_2Ir(biim)]Cl$ (2), where L1 = 2-(2',4'-difluorophenyl)-4-methylpyridine, L2 = 2-(2',4'-difluoro-3'-trifluoromethylphenyl)-4-methylpyridine and biim = 2,2'-biimidazole, were synthesized for applications in phosphorescent organic light-emitting diodes (PhOLEDs). Their photophysical, electrochemical and electroluminescent (EL) device performances were examined. The photoluminescent (PL) spectra revealed blue phosphorescence in the 450 to 485 nm range with a quantum yield of more than 10%. The iridium(III) compounds studied showed good solubility in organic solvents with no solvatochromism dependent on the solvent polarity. The solution-processed OLEDs were prepared with the configuration, ITO/PEDOT:PSS (40 nm)/mCP:Ir(III) (70 nm)/OXD-7 (20 nm)/LiF (1 nm)/Al (100 nm), by spin coating the emitting layer containing the mCP host doped with the iridium phosphors. The best performance of the fabricated OLEDs based on compound 1 showed an external quantum efficiency of 4.5%, luminance efficiency of 8.52 cd $A^{-1}$ and blue emission with the CIE coordinates (x,y) of (0.16, 0.33).

• Journal of Magnetics
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• 제3권3호
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• pp.92-95
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• 1998

In this paper we report the low and high angle diffraction results, and the magnetic and magnetroesistive characteristics of the spin valve multilayer structure prepared by the sputter machine Emerald II in the Balzers Laboratory. The investigated system consists of a ferromagnetic free layer (7 nm NiFe) and a ferromagnetic pinned layer (7 nm NiFe), separated from each other by a nonmagnetic (2.1 nm Cu) spacer. The NiFe pinned layer is fixed by the exchange coupling with an antiferromagnetic layer (10 nm FeMn). For such system the magnetoresistance ratio ΔR/R=3.58%, the interlayer exchange coupling $H_c=6.4$ Oe and the field sensitivity 1.15%/Oe were otained.

• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.1-5
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• 2021

Ultraviolet (UVA)-emissive BaSiO₃:Ce³⁺ phosphor was astonishingly reproducible by vacuum-sintering at a high temperature through a simple solid-state reaction method. It was conveniently formed in BaSiO₃ phases. The compound showed the UVA emission and the UV-VUV excitation due to 5d-4f transitions from Ce³⁺ ions: emission peak at 380 nm with a 56 nm width. Its temperature dependence and vacuum UV excitability were examined for practical application as an excimer discharge lamp, which showed the high thermal stability (80% at 100℃) and the strong VUV excitations at 145 nm and 172 nm.

• 한국결정학회지
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• 제11권4호
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• pp.212-223
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• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

• 한국세라믹학회지
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• 제39권12호
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• pp.1158-1163
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• 2002

2차 비선형 광특성을 유도하기 위한 UV 폴링용 Ge와 B가 첨가된 광민감성 광섬유를 제조하였다. 248 nm KrF 엑시머 레이저 조사에 의하여 수소처리 없이 장주기 격자를 형성할 수 있었다. 116 mJ/$cm^2$의 펄스 에너지와 10 Hz의 조사 빈도로 1분간 광민감성 광섬유에 레이저를 조사할 경우 -4 dB의 큰 band rejection 특성을 얻을 수 있었다. 제조된 광섬유의 광민감성은 장주기 격자쌍 방법을 이용하여 측정하였으며, 8.67 kJ/$cm^2$의 fluence로 KrF 엑시머 레이저를 조사할 경우 3.3${\times}10^{-3}$의 큰 코어 굴절률 변화를 얻었다. 또한 UV 폴링 시에 광섬유 코어에 고전압을 쉽게 인가할 수 있는 H자 형상의 광섬유를 인출조건의 최적호를 통하여 제조하였다.

• 한국컴퓨터산업학회논문지
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• 제6권5호
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• pp.757-766
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• 2005

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.314-321
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• 2006

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6 T Full CMOS SRAM had been continued as the technology advances. However, conventional 6 T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6 T Full CMOS SRAM is $70{\sim}90\;F^2$, which is too large compared to $8{\sim}9\;F^2$ of DRAM cell. With 80 nm design rule using 193 nm ArF lithography, the maximum density is 72 Mbits at the most. Therefore, pseudo SRAM or 1 T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64 M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6 T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed S3 cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^3$ SRAM cell technology with 100 nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.204-209
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• 2004

SiC materials have been extensively studied for high temperature components in advanced energy system and advanced gas turbine. However, the brittle characteristics of SiC such as low fracture toughness and low strain-to fracture still impose a severe limitation on practical applications of SiC materials. For these reasons, $SiC_f/SiC$ composites can be considered as a promising for various structural materials, because of their good fracture toughness compared with monolithic SiC ceramics. But, high temperature and pressure lead to the degradation of the reinforcing fiber during the hot pressing. Therefore, reduction of sintering temperature and pressure is key requirements for the fabrication of $SiC_f/SiC$ composites by hot pressing method. In the present work, Monolithic LPS-SiC was fabricated by hot pressing method in Ar atmosphere at 1760 $^{\circ}C$, 1780 $^{\circ}C$, 1800 $^{\circ}C$ and 1820 $^{\circ}C$ under 20 MPa using $Al_2O_3-Y_2O_3$ system as sintering additives in order to low sintering temperature. The starting powder was high purity ${\beta}-SiC$ nano-powder with an average particle size of 30 nm. Monolithic LPS-SiC was evaluated in terms of sintering density, micro-structure, flexural strength, elastic modulus and so on. Sintered density, flexural strength and elastic modulus of fabricated LPS-SiC increased with increasing the sintering temperature. In the micro-structure of this specimen, it was found that grain of sintered body was grown from 30 nm to 200 nm.