• Bulletin of the Korean Chemical Society
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• 제35권10호
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• pp.2963-2968
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• 2014

We report synthesis and photovoltaic properties of two new conjugated copolymers, PCPDTQxF and PDTSQxF, with 6,7-difluoro-2,3-dihexylquinoxaline unit prepared by Stille coupling reaction. The advantage of 6,7-difluoro-2,3-dihexylquinoxaline based copolymer are high PCEs due to lower HOMO energy level, long wavelength absorption and high hole mobility. The solid films of PCPDTQxF and PDTSQxF showed absorption bands with maximum peaks at about 623 and 493 nm and the absorption onsets at 711 and 635 nm, corresponding to band gaps of 1.74 and 1.95 eV, respectively. The oxidation onsets of the PCPDTQxF and PDTSQxF polymers were estimated to be 0.68 and 0.95 V, which correspond to HOMO energy levels of -5.48 and -5.75 eV, respectively. The PDTSQxF has lower HOMO energy level as compared to PCPDTQxF to lead higher $V_{OC}$ value. The device comprising PCPDTQxF:PCBM (1:2) dissolved to a concentration of 1 wt % in ODCB showed $V_{OC}$ value of 0.62 V, $J_{SC}$ value of $1.14mA/cm^2$, and FF of 0.35, which yielded PCE of 0.25%.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.53-56
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• 2007

We have fabricated organic white light emitting diodes by mixing two colors from very thin rubrene doped and non-doped DPVBi layers. The device structure was ITO/2-TNATA(15 nm)/${\alpha}$-NPD(35 nm)/DPVBi:rubrene(5 nm)/DPVBi(30 nm)/$Alq_{3}(5\;nm)$/BCP(5 nm)/LiF(0.5 nm)/Al(150 nm). The yellow-emitting rubrene of 0.7 wt % was doped into the blue-emitting DPVBi host for the white light. CIE coordinate of the device was (0.31, 0.33) at 8 V. The color coordinates were stable at wide ranges of driving voltages. The luminance was over $1,000\;cd/m^{2}$ at 8 V and increases to $14,500\;cd/m^{2}$ at 12 V. The maximum current efficiency of the device was 8.2 cd/A at $200\;cd/m^{2}$.

• 전기전자학회논문지
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• 제25권4호
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• pp.774-777
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• 2021

본 논문은 Charge Trap Flash using Ferroelectric(CTF-F) 구조를 가진 3D NAND Flash Memory gate controllability에 대해 분석했다. Ferroelectric 물질인 HfO₂는 polarization 이외에도 high-k 라는 특징을 가진다. 이러한 특징으로 인해 CTF-F 구조에서 gate controllability가 증가하고 Bit Line(BL)에서 on/off 전류특성이 향상된다. Simulation 결과 CTF-F 구조에서 String Select Line(SSL)과 Ground Select Line(GSL)의 채널길이는 100 nm로 기존 CTF 구조에 비해 33% 감소했지만 거의 동일한 off current 특성을 확인했다. 또한 program operation에서 channel에 inversion layer가 더 강하게 형성되어 BL을 통한 전류가 약 2배 증가한 것을 확인했다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.155-158
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• 2004

질산화 (SiON) 막은 메모리와 광통신 소자 제조를 위해 활발한 응용이 기대되는 중요한 재료이다. SiON막 증착특성에 관해서는 많은 연구보고가 있었으나, 식각특성에 대해서는 그 발표가 매우 미미하다. 이에 본 연구에서는 PECVD를 이용하여 증착한 SION 박막을 Ni 마스크를 이용하여 식각하였다. 공정변수에는 소스 전력, 바이어스 전력, 압력, 그리고 $C_2F_6$ 유량 등이며, 각 변수의 실험범위는 400-1000 W, 30-90 W, 6-12 mTorr, 그리고 30-80 sccm이다. 식각률은 소스전력의 증가에 따라 233 에서 444 nm/min으로 거의 선형적으로 증가하였다. 비슷한 경향성이 바이어스 전력의 증가에 따라 관찰되었다. 이는 식각률이 플라즈마 밀도와 이온충돌 에너지에 강하게 영향을 받고 있음을 의미한다. 6-10 mTorr의 압력범위와 30-50 sccm의 $C_2F_6$ 유량범위 내에서의 식각률의 변화는 매우 미미하였다. 그러나 고압 (12 mTorr)과 고 유량 (60 sccm)에서 식각률은 크게 상승하거나 감소하였다. 전체 실험범위에서 관측된 식각률의 범위는 233-444 nm/min이었다.

• Korean Chemical Engineering Research
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• 제50권2호
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• pp.204-210
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• 2012

니켈에 양극산화법을 적용하여 기존의 선행연구에서 보고되었던 nm 단위의 두께를 극복하고 최대 2.3 ${\mu}m$ 두께의 산화니켈 박막을 제조하였다. 전해질은 에틸렌글리콜을 용매로 사용하였으며 $F^-$ 이온을 공급하기 위해 $NH_4F$를 첨가하였다. 전압을 40, 60, 80 V로 변화시키며 최대 12시간까지 양극산화반응을 진행하였으며 시간과 전압을 증가시킴에 따라 산화니켈 박막의 두께도 증가하였다. 그러나 80 V 전압에서는 급격한 산화 작용에 따른 니켈의 파괴가 나타났다. XRD 분석 결과 양극산화에 의해 NiO가 생성되었음을 확인하였다.

• 복식
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• 제27권
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• pp.121-132
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• 1996

This study showed the proper pigment extract in the Phe. Dyeing which is the basic dye of the natural plants dyeing,. Also it compared and examined the K/S the promotion of the color fastness and the effect of color difference change were attended by mordants and method of mordanting. 1. The most absorbance of Phellodendron. sol-ution is 330nm berberine is 430nm. 2. The best and proper temperature to extrat Phe,. was 80 and dyeing solution for 24 hours. 3. The pH effect was stable in the absorbances and color differences change. 4. Mordanted group increased the absorbances compared to non-mordanted sample. In case depth the most absorbance of Al. Sn. K. Cu and C. A solution were in 3% Fe and Cr were in 5%. In the color difference change they became dark reduced greenish and increased yellowish when their absorbances were in 3% 5. K./S was recoginzed by tainnin and fe, K/S was more increased pre-mordants than post-mordants. 6. Fe is the unchangable mordant in the color difference change and pre-mordants is more stable than post-mordants in the difference color. 7. Generally light C. F indicated more than grade 2 and light C. F, was much improved in post-mordanted by alumium potassium potass-ium dichromate. Washing C.F was improved in mordanted by tainnin and ferrous suulfate mordanted group was better than non-mordanted sample. Perspir-ation C,F was more stable in acid than alkali. Dry cleaning C.F indicated more than grade. 4.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 추계학술대회
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• pp.1009-1011
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• 2012

본 논문에서는 두개의 Unpolarized F-P LD를 이용한 상호주입 잠김 기반의 파장 가변 광원을 구현하였고, 온도 변화에 따른 특성을 분석하였다. 온도 변화에 따라 파장의 가변 범위가 최대 약 2nm이고, 상대적 밀도 잡음(RIN)는 최저 -110dB/Hz임을 확인하였다. 또한 온도가 높을수록 상대적 밀도 잡음(RIN)는 높아지고, Eye Pattern에 Beating Noise가 발생하는 것을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.20-21
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• 2009

우리는 전면 발광 소자에서 두께에 따른 발광 스펙트럼을 연구하였다. 소자 구조는 Al(100nm)/TPD(40nm)/Alq3(60nm)/LiF(0.5nm)/Al(2nm)/Ag(30nm)으로 하였다. N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine(TPD)와 tris-(8-hydroxyquinoline) aluminium(Alq3)는 전공 수송층과 발광층으로 각각 사용되었다. 반투명 전극은 Li/Al/Ag로 하였다. 유기물층과 전극은 $2\times10-5$torr의 진공도에서 열 증착하였다. 유기물과 금속의 증착 속도는 $0.5\sim1.0{\AA}/s$과 $0.5\sim5{\AA}/s$로 하였다. 제작된 소자는 두께가 증가할 수록 장파장으로 이동하는 현상을 보였다. 이러한 현상은 마이크로 캐비티 이론으로 설명할 수 있다. 소자는 이론적인 마이크로 캐비티 수식을 이용하여 분석하기 위해 각각의 변수를 이용하여 실험과 이론을 비교하였을 때, 각각의 스펙트럼이 거의 일치하는 것을 확인할 수 있었다.

• 한국표면공학회지
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• 제54권3호
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• pp.112-118
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• 2021

Dy³⁺- and Eu³⁺-codoped BaWO₄ phosphors for white light-emitting diode were synthesized with different activator ions via a solid-state reaction process. The structural, morphological, and optical properties of the BaWO₄:Dy³⁺,Eu³⁺ phosphors were investigated as a function of Eu³⁺ concentration at a fixed concentration of Dy³⁺ ions. XRD patterns exhibited that all the synthesized phosphors had a tetragonal system, irrespective of the concentrations of Dy³⁺ and Eu³⁺ ions. The excitation spectra of the synthesized phosphors were composed of three intense bands centered at 251, 355, and 393 nm and several weak peaks. For the BaWO₄:Dy³⁺,Eu³⁺ phosphors synthesized with 1 mol% of Eu³⁺, the emission spectra under ultraviolet excitation at 393 nm showed two strong blue and yellow bands at 485 and 577 nm corresponding to the ⁴F_9/2⁶H_15/2 and ⁴F_9/2⁶H_13/2 transitions of Dy³⁺ ions, respectively and several weak bands in the range of 600-700 nm resulting from the 4f transitions of Eu³⁺ ions. As the concentration of Eu³⁺ ions increased, intensities of the blue and yellow emission bands gradually decreased while those of the red emissions increased rapidly and the energy transfer efficiency from Dy³⁺ to Eu³⁺ ions was 95.3% at 20 mol% of Eu³⁺. The optimum white light emission with x=0.363, y=0.357 CIE 1931 chromaticity coordinates was obtained for the sample doped with 5 mol% Dy³⁺ and 1 mol% of Eu³⁺.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.226-226
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• 2016

PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the green emission profile in EML by using a gasket doping method. CBP and Ir(ppy)3 (2% wt) are co-deposited homogeneously as a background material of EML for green PHOLED, then a 5nm thickness of additionally doped layer by Ir(btp)2 (8% wt) is formed as a profiler of the green emission. The total thickness of the EML is maintained at 30nm while the distance of the profiler from the HTL/EML interface side (x) is changed in 5nm steps from 0nm to 25nm. As shown in Fig. 1, the green (513nm) peak from Ir(ppy)3 is not observed when Ir(btp)2 is also doped homogeneously because Ir(ppy)3 works as an gasket dopant of the Ir(btp)2 :CBP system. Therefore, in this experment, Ir(btp)2 can be used as a profiler of the green emission in CBP:Ir(ppy)3 system. The emission spectra from the PHOLED devices with different x are shown in Fig. 2. In this gasket doping system, stronger red peak means more energy transfer from green to red dopant or higher exciton density by green dopant. To find the green emission profile, the external quantum efficiency (EQE) at 3mA/cm2 for red peaks are calculated. More green light emission at near EML/HBL interface than that of HTL/EML is observed (insert of Fig. 2). This means that the higher exciton density at near EML/HBL interface in homogeneously doped CBP with Ir(ppy)3. As shown in Fig. 3, excitons can be quenched easily to HTL(NPB) because the T1 level of HTL(2.5eV) is relatively lower than that of EML(2.6eV). On the other hand, the T1 level of HBL(2.7eV) is higher than that of EML.