• Bulletin of the Korean Chemical Society
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• v.22 no.12
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• pp.1371-1374
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• 2001

Metal doping was adopted to modify TiO2 (P-25) and enhance the photocatalytic degradation of harmful cyanides in aqueous solution. Ni, Cu, Co, and Ag doped TiO2 were found to be active photocatalysts for UV light induced degradation of aqueous cyanides generating cyanate, nitrate and ammonia as main nitrogen-containing products. The photoactivity of Ni doped TiO2 was greatly affected by the state of Ni, that is, the crystal size and the degree of reduction of Ni. The modification effects of some mixed oxides, that is, Ni-Cu/TiO2 were also studied. The activity of Ni-Cu/TiO2 for any ratio of Cu/Ni was higher than that of Ni- or Cu-doped TiO2, and the catalyst at the Cu/Ni ratio of 0.3 showed the highest activity for cyanide conversion.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.413-416
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• 2008

A synthesis route to ordered mesoporous carbons with controllable nitrogen content has been developed for high-performance EDLC electrodes. Nitrogen-doped ordered mesoporous carbons (denoted as NMC) were prepared by carbonizing a mixture of two different carbon sources within the mesoporous silica designated by KIT-6. Furfuryl alcohol was used as a primary carbon precursor, and melamine as a nitrogen dopant. This synthesis procedure gave cubic Ia3d mesoporous carbons containing nitrogen as much as 13%. The carbon exhibited a narrow pore size distribution centered at 3-4 nm with large pore volume (0.6-1 cm3 g-1) and high specific BET surface area (700-1000 m2 g-1). Electrochemical behaviors of the NMC samples with various N-contents were investigated by a two-electrode measurement system at aqueous solutions. At low current density, the NMC exhibited markedly increasing capacitance due to the increase in the nitrogen content. This result could be attributed to the enhanced surface affinity between carbon electrode and electrolyte ions due to the hydrophilic nitrogen functional groups. At high current density conditions, the NMC samples exhibited decreasing specific capacitance against the increase in the nitrogen content. The loss of the capacitance with the N-content may be explained by high electric resistance which causes a significant IR drop at high current densities. The present results indicate that the optimal nitrogen content is required for achieving high power and high energy density simultaneously.

• Korean Journal of Materials Research
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• v.21 no.12
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• pp.639-643
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• 2011

Zinc oxide as an optoelectronic device material was studied to utilize its wide band gap of 3.37 eV and high exciton biding energy of 60 meV. Using anti-site nitrogen to generate p-type zinc oxide has shown a deep acceptor level and low solubility. To increase the nitrogen solubility in zinc oxide, group 13 elements (aluminum, gallium, and indium) was co-added to nitrogen. The effect of aluminum on nitrogen solubility in a $3{\times}3{\times}2$ zinc oxide super cell containing 72 atoms was investigated using density functional theory with hybrid functionals of Heyd, Scuseria, and Ernzerhof (HSE). Aluminum and nitrogen were substituted for zinc and oxygen sites in the super cell, respectively. The band gap of the undoped super cell was calculated to be 3.36 eV from the density of states, and was in good agreement with the experimentally obtained value. Formation energies of a nitrogen molecule and nitric oxide in the zinc oxide super cell in zinc-rich conditions were lower than those in oxygen-rich conditions. When the number of nitrogen molecules near the aluminum increased from one to four in the super cell, their formation energies decreased to approach the valence band maximum to some degree. However, the acceptor level of nitrogen in zinc oxide with the co-incorporation of aluminum was still deep.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.513-516
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• 2004

본 논문에서는 $20\%$ Ge 조성 비율을 갖는 SiGe 200nm 에 $1\%$-Nitrogen doping 된 Nickel 을 이용하여 새로운 Nickel Germanosilicide 방법을 제안하여 Ni-Germanosilicide 의 단점인 열 안정성 개선에 대해 연구하였다. Nitrogen atom 이 grain boundary 에 존재하여 Nickel의 diffusion을 억제시키는 역할을 하여 shallow한 실리사이드와 uniform 한 실리사이드 계면 특성을 얻게 되었다. 그리고 실리사이드 형성 후, 고온로 열처리 $600^{\circ}C$, 30min 후에도 낮고 안정한 면 저항 특성으로 열안정성 개선 할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.322-322
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• 2016

Phase change memory (PCM) has attracted much attention as one of the most promising candidates for next-generation nonvolatile memory. In that regard, the purposes of the study are to propose reference of effective pulse parameter to control phase switching operation and to invest the effect of nitrogen doped in PCM materials for improved cycling stability and economic energy consumption. Switching operation of PCM is affected by electric pulse parameter and as shown in figure.1 are composed to RT(rising time), ST(setting time), FT(falling time) and the effect of these parameter was precisely investigated. Transmission electron microscope (TEM) was used to confirm fine structure and retention cycle test was conducted to confirm reliability. Finally improvement reliability and economic power consumption in quantitatively are obtainable by optimum pulse parameter and nitrogen doping in GST material. these study is related to the engineering background of other semiconductor industries and it have confirmed to possibility further applications.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1256_1257
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• 2009

We have grown, for the first time to our knowledge, N-doped ZnO thin films on sapphire substrate by employing novel dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting to find a dominant acceptor-bound exciton peak ($A^0X$) that indicates the successful p-type doping of ZnO with N.

• Journal of the Korean institute of surface engineering
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• v.34 no.3
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• pp.258-263
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• 2001

Siloxane thin films were fabricated on a silicon wafer by spin-coating using a siloxane solution made by the sol-gel process. Fluorine was doped using$ CF_4$ plasma treatment. The film was then annealed in-situ state in the nitrogen atmosphere. In order to examine the influence of annealing and fluorine doping on the siloxane thin film, thermogravimetric-differential thermal analysis (TG-DTA), Fourier transform-infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used and the dielectric constant was determined by the high-frequency capacitance-voltage method. Stable siloxane films could be obtained by in-situ annealing in a nitrogen atmosphere after $CF_4$ plasma treatment, and the dielectric value of the film was $\varepsilon$ 2.5.

• Clean Technology
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• v.23 no.3
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• pp.308-313
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• 2017

In this study, we investigated the electrocatalytic effects of the N and O co-doping of Graphite Felt (GF) electrode for the vanadium redox flow battery (VRFB) at the cathode and the anode reaction, respectively. The electrodes were prepared by chemical vapor deposition (CVD) with $NH_3-O_2$ at 773 K, and its effects were compared with an electrode prepared by an O doping treatment. The surface morphology and chemical composition of the electrodes were characterized by scanning electron microscopy (SEM) and photoelectron spectroscopy (XPS). The electrocatalytic properties of these electrodes were characterized in a VRFB single cell comparing the efficiencies and performance of the electrodes at the cathode, anode, and single cell level. The results exhibited about 2% higher voltage and energy efficiencies on the N-O-GF than the O-GF electrode. It was found that the N and O co-doping was particularly effective in the enhancement of the reduction-oxidation reaction at the anode.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.186-186
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• 2013

Nitrogen doped Ge-Sb-Te (N-GST) thin films for phase change random access memory (PRAM) applications were investigated by synchrotron-radiation-based x-ray photoelectron spectroscopy and absorption spectroscopy. Nitrogen doping in GST resulted in more favorable N atoms' bonding with Ge atoms rather than with Sb and Te atoms [1,2], which explains the higher phase change transition temperature than that of undoped Ge-Sb-Te thin film. Surprisingly, it was noticed that N atoms also existed in the form of molecular nitrogen, $N_2$, which is detrimental to the stability of the GST performance [3]. N-doped GST experimental features were also supported by ab-initio molecular dynamic calculations [2]. References [1] M.-C. Jung, Y. M. Lee, H.-D. Kim, M. G. Kim, and H. J. Shin, K. H. Kim, S. A. Song, H. S. Jeong, C. H. Ko, and M. Han, "Ge nitride formation in N-doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 91, 083514 (2007). [2] Zhimei Sun, Jian Zhou, Hyun-Joon Shin, Andreas Blomqvist, and Rajeev Ahuja, "Stable nitride complex and molecular nitrogen in N doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 93, 241908 (2008). [3] Kihong Kim, Ju-Chul Park, Jae-Gwan Chung, and Se Ahn Song, Min-Cherl Jung, Young Mi Lee, Hyun-Joon Shin, Bongjin Kuh, Yongho Ha, Jin-Seo Noh, "Observation of molecular nitrogen in N-doped Ge2Sb2Te5", Appl. Phys. Lett. 89, 243520 (2006).

• Korean Journal of Materials Research
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• v.28 no.3
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• pp.182-188
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• 2018

Nitrogen (N)-doped protein-based carbon as platinum (Pt) catalyst supports from tofu for oxygen reduction reactions are synthesized using a carbonization and reduction method. We successfully prepare 5 wt% Pt@N-doped protein-based carbon, 10 wt% Pt@N-doped protein-based carbon, and 20 wt% Pt@N-doped protein-based carbon. The morphology and structure of the samples are characterized by field emission scanning electron microscopy and transmission electron micro scopy, and crystllinities and chemical bonding are identified using X-ray diffraction and X-ray photoelectron spectroscopy. The oxygen reduction reaction are measured using a linear sweep voltammogram and cyclic voltammetry. Among the samples, 10 wt% Pt@N-doped protein-based carbon exhibits exellent electrochemical performance with a high onset potential of 0.62 V, a high $E_{1/2}$ of 0.55 V, and a low ${\Delta}E_{1/2}=0.32mV$. Specifically, as compared to the commercial Pt/C, the 10 wt% Pt@N-doped protein-based carbon had a similar oxygen reduction reaction perfomance and improved electrochemical stability.