• Clean Technology
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• v.26 no.1
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• pp.7-12
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• 2020

Ti-SBA-15 catalysts doped with lanthanide ions (Ln/Ti-SBA-15) were successfully synthesized using conventional hydrothermal method. In addition, they were characterized by XRD, FT-IR, DRS, BET, and PL. The activity of these materials on the photocatalytic decomposition of methylene blue under ultraviolet light irradiation was also examined. Ti-SBA-15 catalysts doped with various lanthanide ions maintained their mesoporous structure. The pore size and pore volume of Ln/Ti-SBA-15 materials decreased but their surface area increased upon the doping of lanthanide ion. Ln/Ti-SBA-15 materials exhibited the type IV nitrogen isotherm with desorption hysteresis loop type H2, which was characteristic of mesoporous materials. The size of hysteresis increased in the doping of lanthanide ions on Ti-SBA-15 material. There was no absorption in the visible region (> 400 nm) regardless of the doping of lanthanide ions to TiO₂ particles, while the broad bands at 220 nm appeared at the Ln/Ti-SBA-15 samples, indicating the framework incorporation of titanium into SBA-15. 1 mol% Pr/ Ti-SBA-15 catalysts showed the highest photocatalytic activity on the decomposition of methylene blue but the Ti-SBA-15 catalysts doped with Eu, Er, and Nd ions showed lower activity compared to pure Ti-SBA-15 catalyst. The PL peaks appeared at about 410 nm at all catalysts while the excitonic PL signal was proportional to the photocatalytic activity for the decomposition of methylene blue.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.39-42
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• 1999

Nitrogen-doped SiC(3C) (N-SiC(3C)) epliayers were grown on Si(111) substrate at $1250^{\circ}C$ using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane(TMS) in $H_{2}$ carrier gas. SiC(3C) layer was doped using $NH_{3}$ during the CVD growth to be n-type conduction. Physical properties of N-SiC(3C) were investigated by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) patterns, Raman spectroscopy, cross-sectional transmission electron microscopy (XTEM), Hall measurement, and current-voltage(I-V) characteristcs of the N-SiC(3C)/Si(p) diode. N-SiC(3C) layers exhibited n-type conductivity. The n-type doping of SiC(3C) could be controlled by nitrogen dopant using $NH_{3}$ at low temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.337-337
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• 2012

Dye sensitized solar cell (DSSC) having high efficiency with low cost was first reported by Gr$\ddot{a}$tzel et al. Many DSSC research groups attempt to enhance energy conversion efficiency by modifying the dye, electrolyte, Pt-coated electrode, and $TiO_2$ films. However, there are still some problems against realization of high-sensitivity DSSC such as the recombination of injected electrons in conduction band and the limited adsorption of dye on $TiO_2$ surface. The surface of $TiO_2$ is very important for improving hydrophilic property and dye adsorption on its surface. In this paper, we report a very efficient method to improve the efficiency and stability of DSSC with nano-structured $TiO_2$. Atmospheric plasma system was utilized for nitrogen plasma treatment on nano-structured $TiO_2$ film. We confirmed that the efficiency of DSSC was significantly dependent on plasma power. Relative in the $TiO_2$ surface change and characteristics after plasma was investigated by various analysis methods. The structure of $TiO_2$ films was examined by X-ray diffraction (XRD). The morphology of $TiO_2$ films was observed using a field emission scanning electron microscope (FE-SEM). The surface elemental composition was determined using X-ray photoelectron spectroscopy (XPS). Each of plasma power differently affected conversion efficiency of DSSC with plasma-treated $TiO_2$ compared to untreated DSSC under AM 1.5 G spectral illumination of $100mWcm^{-2}$.

• Applied Chemistry for Engineering
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• v.25 no.3
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• pp.292-299
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• 2014

In this study, nitrogen doped carbon felt (CFt) is prepared using thermal oxidation and liquid phase ammonia treatment to improve the efficiency for vanadium redox flow batteries (VRFB). The electrochemical properties of prepared CFt electrodes are investigated using cyclic voltammetry (CV) and charge/discharge test. The XPS result shows that the increase of liquid phase ammonia treatment temperature leads to the increased nitrogen functional group on the CFt surface. Redox reaction characteristics using CV reveal that the liquid phase ammonia treated CFt electrodes are more reversible than the thermally oxidized CFt. When CFt is treated by the liquid phase ammonia at $300^{\circ}C$, VRFB cell energy efficiency, voltage efficiency, and current efficiency are increased about 6.93%, 1.0%, and 4.5%, respectively, compared to those of the thermally oxidized CFt. These results are because nitrogen functional groups on CFt help to improve the electrochemical properties of redox reaction between electrode and electrolyte interface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.2
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• pp.55-60
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• 2022

In this study, a heat treatment experiment was conducted to select a new melt composition that can easily control the unintentionally doped nitrogen (N-UID) without degrading the SiC single crystal quality during TSSG process. The experiment was carried out for about 2 hours at a temperature of 1900℃ under Ar atmosphere. The used melt composition is based on either Si-Ti 10 at% or Si-Cr 30 at%, and also Co or Sc transition metals, which are effective for carbon solubility, were added at 3 at%, respectively. After the experiment, the crucible was cross-sectionally cut, and evaluated the Si-C reaction layer on the crucible-melt interface. As a result, with Sc addition, Si-C reaction layers uniformly occurred with a Si-infiltrated layer (~550 ㎛) and a SiC interlayer (~23 ㎛). This result represented that the addition of Sc is an effective transition metal with high carbon solubility and can feed carbon sources into the melt homogeneously. In addition, Sc is well known to have low reactivity energy with nitrogen compared to other transition metals. Therefore, we expect that both growth rate and Nitrogen UID can be controlled by Si-Sc based melt in the TSSG process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.611-617
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• 2006

We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.391-391
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• 2010

The stability enhancement of Znic oxide thin film transistor deposited by PLD-DBD has been reported here using the bias temperature stress test. Znic oxide (ZnO) thin films were deposited on $SiO_2$/Si (100) by pulsed laser deposition method with and without dielectric barrier discharge (DBD) method. The DBD is the efficient method to adopt the nitrogen ions into the thin films. The TFT characteristics of ZnO TFTs with and without Nirogen (N) doping show similar results with $I_{on/off}$ of $10^5{\sim}10^6$. However. the bias temperature stress (BTS) test of N-doped ZnO TFT with DBD shows higher stability than that of ZnO TFT.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.200-204
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• 2011

Increase of surface area and decrease of band gap in $TiO_2$ semiconductors are significant to improve the efficiency of water splitting by photoelectrolysis. In this study $TiO_2$ nanotube arrays with ~7 um length and ~100 nm diameter were fabricated by an anodizing technique of titanium foils using DMSO (dimethyl sulfoxide)-based electrolytes. Then to control the band gap of the $TiO_2$ arrays, they were annealed at $550^{\circ}C$ for up to 180 min in $NH_3$ gas ambient. The samples annealed in $NH_3$ gas for 30 min and 60 min showed superior photo-conversion efficiency for water splitting under white and visible light. A $TiO_2$ nanotube annealed in $NH_3$ gas ambient for a period longer than 120 min showed 1 order higher leakage current. It is believed that the decrease of band gap and increase of conductivity in $TiO_2$ nanotube arrays due to $NH_3$ gas treatments result in the superior water-splitting performance.

• Progress in Superconductivity and Cryogenics
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• v.16 no.1
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• pp.27-31
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• 2014

2G HTS tapes are widely used for various electric machines. In addition, stacked or parallel connected HTS tapes are essentially used to raise transport current level for large capacity electric machines. Therefore, critical current characteristic of stacked tapes need to be studied. Recently developed 2G HTS tapes are fabricated with various defects doping so that tapes possess pinning center to improve the critical current characteristic. During this process, the critical current is determined minimum value in not perpendicular magnetic field but a specific magnetic field angle according to the reported research. However, the effects of magnetic field angle to critical current of multi-stacked 2G HTS tapes have not been examined. In this paper, field coil which is a race-track coil wound by using an HTS tape with iron-core was fabricated to apply angle adjustable magnetic field to the 2G HTS tape samples. We measured critical current of single and multi-stacked two tapes that have different characteristic depending on various magnetic field angle and magnitude in liquid nitrogen environment. Furthermore, results of single and multi-stacked tapes were compared and analyzed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.442-443
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• 2007

Al-N co-doped ZnO films were fabricated on n-Si (100) and homo-buffer layers in the mixture of oxygen and nitrogen at $450^{\circ}C$ by magnetron sputtering. Target was ZnO ceramic mixed with $2wt%Al_2O_3$. XRD spectra show that as-grown and $600^{\circ}C$ annealed films are prolonged along crystal c-axis. However they are not prolonged in (001) plane vertical to c-axix. The films annealed at $800^{\circ}C$ are not prolonged in any directions. Codoping makes ZnO films unidirectional variation. XPS show that Al content hardly varies and N escapes with increasing annealing temperature from $600^{\circ}C\;to\;800^{\circ}C$. The electric properties of as-grown films were tested by Hall Effect with Van der Pauw configuration show some of them to be p-type conduction.