• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.125-132
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• 2010

For typical governing dimensionless parameters of Ar = 5, Pr = 1.16, Le = 0.14, Pe = 3.57, Cv = 1.02, $Gr_s=2.65{\times}10^6$, the effects of thermo physical properties such as a molecular weight, a binary diffusivity coefficient, a partial pressure of component B on solutally buoyancy-driven convection (solutal Grashof number $Gr_s=2.65{\times}10^6$) are theoretically investigated for further understanding and insight into an essence of solutal convection occurring in the vapor phase during the physical vapor transport of a $Hg_2Cl_2-N_2$ system. The solutally buoyancy-driven convection is significantly affected by any significant disparity in the molecular weight of the crystal components and the impurity gas of nitrogen. The solutal convection in a vertical orientation is found to be more suppressed than a tenth reduction of gravitational accelerations in a horizontal orientation. For crystal growth parameters under consideration, the greater uniformity in the growth rate is obtained for either solutal convection mode in a vertical orientation or thermal convection mode in horizontal geometry. The growth rate is also found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.

• Journal of Hydrogen and New Energy
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• v.24 no.4
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• pp.288-294
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• 2013

This gas analysis data come from the hydrogen which is produced by proton exchange membrane. Main impurities of hydrogen are methane, oxygen, nitrogen, carbon monoxide, and carbon dioxide. The concentration of impurities is ranged between 0.0191 to $315{\mu}mol/mol$ for each impurity. Methane contamination is believed from the electrode reaction between carbon doped electrode and produced hydrogen. Nitrogen contamination should take place the sampling process error, not from PEM hydrogen Production system.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.130-132
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• 2005

Tungsten carbon nitride (W-C-N) thin films were produced by reactive radio frequency (RF) magnetron sputter-ing of tungsten in $Ar-N_2$ gas mixture. The effects of the variation of nitrogen partial pressure on the composition, and structural properties of these films as well as the influence of post-deposition annealing have been studied. When $La_{0.67}Sr_{0.33}MnO_3$ was coated on the W-C-N/Si substrate, coercivity ($H_c$) and magnetization at room temperature shows 58.73 Oe, and 29.4 emu/cc, respectively. In order to improve the diffusion barrier characteristics, we have studied the impurity behaviors to control the ratios of nitrogen and carbon concentrations.

• Journal of Hydrogen and New Energy
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• v.16 no.3
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• pp.290-295
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• 2005

For the application of fuel cell, the content and concentration of impurities in hydrogen stream must be classified. The purpose of this study is to provide analysis tool for the determination of impurities in hydrogen with ultra high purity. To produce UHT hydrogen, we purified hydrogen gas by both getter-based catridge and liquid-nitrogen soaked catridge. We compare two methods and propose new method to know about what is in hydrogen stream.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.1
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• pp.31-35
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• 2003

The PL data bases reveal the fact that a part of lattice of HPHT treated diamond is reconfigured by the reduction, elimination, generation, and movement of vacancies and interstitials as well as of impurity elements. In particular, this very sensitive method clearly illustrated that minute amount of nitrogen impurities is present in all of these type IIa diamonds, and reveal the presence of a considerable number of point defects dispersed throughout the crystal lattice.

• 전기의세계
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• v.17 no.2
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• pp.16-26
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• 1968

Cds is possible to add excess donors and to compensate partially using other group metals as acceptors. The impurities can ble incorporated either during crysta growth or by diffusion into a bulkcrystal. The addition of rimpurities leads also to the production of vacancies in a manner depending on the atmosphere surrounding the crystal during growth, during the diffusion process or using bulk. Cds of the mentioned above affects spectral sensitivity, speed of response, the variation on photocurrent, electron life time, and decay of photoconductivity with temperature and with intensity of illumination. In the work to be deseribed, these properties have been studied between liquid nitrogen and room temperature. In addition, the electron trap distribution has been correlated with speed of response, variation of photocurrent with temperature in various atmosphere. Four major trapping levels have been observed, and their identification with impurity and vacancy levels is discussed. And also the effects of lattice imperfections on the photoconductive properties CdS were investigated in detail.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1688-1691
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• 2007

This paper shows that the boundary image sticking can be prohibited completely by using the vacuum sealing process, which means that the residual impurities such as nitrogen or oxygen can be a critical factor inducing the boundary image sticking. The production of boundary image sticking was checked in the test panel fabricated by the $N_2$ or $O_2$ flow during the vacuum sealing process. As a result, the boundary image sticking did not appear in the case of $N_2flow$, whereas the boundary image sticking was observed in the case of $O_2$ flow even though the test panel was fabricated by the vacuum sealing process.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.397-402
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• 1999

The base pressure of the vacuum vessel of KSTAR tokamak is to be ultra high vacuum, $10^{-6}\sim10^{-7}Pa$, to produce a clean plasma with low impurity concentrations. For this purpose, vessel and plasma facing components need to be baked up to $250^{\circ}C$, $350^{\circ}C$ respectively to remove impurities from the plasma-material interaction surfaces. Here the required heating power to be supplied for baking has been calculated according to pre-assumed different temperature profiles (baking scenario and proper baking plan for KSTAR tokamak has been proposed. Mass flow rate and temperature of nitrogen gas for baking has also been calculated.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.313-317
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• 1996

This work deals with description of gas purifing system to product high pure helium gas using low temperature absorption. The system controls temperature of heaters, open/close of solenoid valves and levels of liquid nitrogen to purify a raw gas and continuously products purified gas with perfoming alternatively purification and regeneration. We develop the monitoring and control program to monitor the gas purification process on real-time and control the process time with checking the impurities in purified gas. From the result of system operation, the developed monitoring and control system continuously products high pure helium gas with reducing impurities in raw gas to permitted limits(less than 0.01 ~ 0.05 ppm)

• Current Applied Physics
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• v.18 no.12
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• pp.1553-1557
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• 2018

Gallium nitride (GaN) nanoparticles are synthesized by the gallium particle trapping effect in a $N_2$ nonthermal plasma with metallic Ga vapor. A proposed method has an advantage of synthesized GaN nanoparticle purity because the gallium vapor from the inductively heated tungsten boat does not contain any impurity source. The synthesized particle size can be controlled by the amount of Ga vapor, which is adjusted using the plasma emission ratio of nitrogen to gallium, owing to the particle trapping effect. The synthesized nanoparticles are investigated by electron microscopy studies. High-resolution transmission electron microscopy (HRTEM) studies confirm that the synthesized GaN nanoparticles (10-40 nm) crystallize in a single-phase wurtzite structure. Room-temperature photoluminescence (PL) measurements indicate the band-edge emission of GaN at around 378 nm without yellow emission, which implies that the synthesized GaN nanoparticles have high crystallinity.