• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.24-24
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• 2003

Research activity in the III-V nitrides materials system has increased markedly in the past several years ever since high-brightness blue light-emitting diodes (LEDs) became commercially available. Despite of excellent optical properties of the GaN, however, inherently poor thermal property of the sapphire used as a substrate material n these devices may lead to thermal degradation of devices, especially during their high power operation. Therefore, dependable thermal analysis and packaging schemes of GaN-based LEDs are necessary for solid lighting applications under high power operation. In this paper, emphasis will be placed upon thermal design of GaN-based LEDs. Thermal measurements of LEDs on chip and packaging scale were performed using the liquid crystal thermographic technology and micro thermocouples for different bias conditions. By a series of optical arrangement, hot spots with specific transition temperatures were obtained with increasing input power. Thermal design of LEDS was made using the finite element method and analytical unit temperature profile approach with optimal boundary conditions. The experimental results were compared to the simulated data and the results agree well enough for the establishment of dependable prediction of thermal behavior in these devices. The paper will present a more detailed understanding of the thermal analysis of the GaN-based blue and white LEDs for high power applications.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1244_1245
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• 2009

Coating of amorphous nitride thin layers, such as boron nitride (BN) and carbon nitride (CN), has been performed on carbon nanotubes (CNTs) for the purpose of enhancing their electron-emission performances because those nitride films have relatively low work functions and commonly exhibit negative electron affinity behavior. The CNTs were directly grown on metal-tip (tungsten, approximately 500 nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). Sharpening of the tungsten tips were carried out by electrochemical etching. Morphologies and microstructures of BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM), energy dispersive x-ray (EDX) spectroscopy, and Raman spectroscopy. The electron-emission properties (such as maximum emission currents and turn-on fields) of the BN-coated and CN-coated CNT-emitters were characterized in terms of the thickness of BN and CN layers.

• Journal of Welding and Joining
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• v.14 no.2
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• pp.46-56
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• 1996

HAZ impact toughness of Ti-oxide steel was investigated and compared to that of a conventional Ti-nitride steel. Toughness variations of each steel with weld peak temperatures and cooling rates were interpreted with microstructural transformation characteristics. In contrast to Ti-nitride steel showing continuous decrease in HAZ toughness with peak temperature, Ti-oxide steel showed increase in HAZ toughness above $1400^{\circ}C$ peak temperature. The HAZ microstructure of the Ti-oxide steel is characterized by the formation of intragranular ferrite plate, which was found to start from Ti-oxide particles dispersed in the matrix of the steel. Large austenite grain size above $1400^{\circ}C$ promoted intragranular ferrite plate formation in Ti-oxide steel while little intragranular ferrite plate was formed in Ti-nitride steel because of dissolution of Ti-nitrides. Ti-oxides in the Ti-oxide steel usually contain MnS and have crystal structures of TiO and/or $Ti_2O_3$.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.29-33
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• 2000

The amorphous tungsten nitrides, WNx, film could be fabricated by reactive sputtering process. The nitrogen concentration for the amorphization ranges from 10 at% to 40at%. The amorphous $W_{67}N_{33}$ film was crystallized into low resistivity $\alpha$-tungsten phase with equiaxed grains and excess nitrogen after the rapid thermal annealing for 1min at 1273K, which was similar to the resistivity of the sputtered pure tungsten film. The excess nitrogen was depleted from $\alpha$-tungsten crystals and then segregated at $\alpha$-tungsten/poly-Si interface. The segregated nitrogen has favored the formation of the homogeneous diffusion barrier layer comprised of silicon nitride, $Si_3N_4$, nano-crystals, which undertaken the inhibition of the high resistivity tungsten silicide reaction.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.329-335
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• 2006

In order to improve thermal efficiency of the fossil fuel power plants, we need to develop advanced materials with superior durability in the ultra-super critical state, which requires surface modifications for superior surface properties. In this study, we coated the Incoloy 901 and 12-17Cr steels for turbine buckets and valves with nitriding, boriding, and $Cr_3C_2-NiCr$ HVOF(high velocity oxygen flow) method. Then the samples were heat treated at $650^{\circ}C$ for 100 hours in vacuum. We analyzed the evolution behaviors of nitrides such as $Fe_3N,\;Fe_4N$, and CrN and borides such as FeB and $Fe_2B$ with XRD and SEM/EDS by comparing hardnesses and compositions of the coated layers before and after the heat treatments.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.954-964
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• 1999

The effect of fabrication variables and microstructures on the compressive strength of open cell alumina zirconia and silicon nitride ceramics fabricated by polymeric sponge method was investigated. Bulk density and compressive strength of open cell ceramics were mainly affected by coating characteristics of ceramic slurry on polymeric sponge that controlled a shape thickness and defect of the struts. Sintering temperature was optimized for enhancement of strut strength and compressive strength of open cell ceramics. Relative density and compressive strength behaviors were relatively well matched with the predicted values. Open cell ceramics of lower relative density below 0.1 prepared by first relatively well matched with the predicted values. Open cell ceramics of lower relative density below 0.1 prepared by first coating of ceramic slurry had thin triangular prismatic struts that were often broken or longitudinally cracked. With an application of second coating of slurry shape of struts was transformed into thickner cylindrical one and defects in struts were healed but the relative density increased over 0.2 Open cell zirconia had both the highest bulk density and compressive strength and alumina had the lowest compressive strength while silicon nitrides showed relatively high compressive strength and the lowest density. Based upon the analysis open cell silicon nitride was expected to be one of potential structural ceramics with light weight.

• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.406-412
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• 1997

Al2O3/SiC hybrid-composite has been fabricated by the conventional powder process. The addition of $\alpha$-Al2O3 as seed particles in the transformation of ${\gamma}$-Al2O3 to $\alpha$-Al2O3 provided a homogeneity of the microstructure. The grain growth of Al2O3 are significantly surpressed by the addition of nano-size SiC particles. Dislocation were produced due to the difference of thermal expansion coefficient between Al2O3 and SiC and piled up on SiC particles in Al2O3 matrix, resulting in transgranular fracture. The high fracture strength of the composite was contributed to the grain refinement and the transgranular fracture mode. The addition of SiC platelets to Al2O3/SiC nano-composite decreased the fracture strength, but increased the fracture toughness. Coated SiC platelets with nitrides such as BN and Si3N4 enhanced fracture toughness much more than non-coated SiC platelets by enhancing crack deflection.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

• Advances in materials Research
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• v.5 no.3
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• pp.131-140
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• 2016

Copper/silicon nitride ($Cu/Si_3N_4$) composites are fabricated by powder technology process. Copper is used as metal matrix and very fine $Si_3N_4$ particles (less than 1 micron) as reinforcement material. The investigated powder were used to prepare homogenous ($Cu/Si_3N_4$) composite mixtures with different $Si_3N_4$ weight percentage (2, 4, 6, 8 and10). The produced mixtures were cold pressed and sintered at different temperatures (850, 950, 1000, $1050^{\circ}C$). The microstructure and the chemical composition of the produced $Cu/Si_3N_4$ composites were investigated by (SEM) and XRD. It was observed that the $Si_3N_4$ particles were homogeneously distributed in the Cu matrix. The density, electrical conductivity and coefficient of thermal expansion of the produced $Cu/Si_3N_4$ composites were measured. The relative green density, sintered density, electrical conductivity as well as coefficient of thermal expansion were decreased by increasing the reinforcement phase ($Si_3N_4$) content in the copper matrix. It is also founded that the sintered density and electrical conductivity of the $Cu/Si_3N_4$ composites were increased by increase the sintering temperature.

• 연구논문집
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• s.26
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• pp.103-112
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• 1996

$Al_2O_3/SiC$ Hybrid-Composite has been fabricated by conventional powder process. The addition of $\alpha-Al_2O_3$ as seed particles in the transformation of $\gamma-Al_2O_3 to $\alpha-Al_2O_3$ provided a homogeneity of the microstructure, resulting in increase of mechanical properties. The grain growth of $Al_2O_3$ are significantly surpressed by the addition of nano-sized. SiC particles, increasing in fracture strength. The addition of SiC plates to $Al_2O_3$ nano-composite decreased the fracture strength, but increased the fracture toughness. Coated SiC plates with nitrides such as BN and /SiC$Si_3N_4$ enhanced fracture toughness much more than uncoated SiC plates by inducing crack deflection.