• Environmental Analysis Health and Toxicology
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• v.22 no.4
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• pp.339-348
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• 2007

A laboratory experiment was conducted to study the characteristics of leaching of Cr, Cu, and As from chromated topper arsenate (CCA)-treated wood. The wood species tested was hemlock spruce ($10\;cm\;{\times}\;10\;cm\;{\times}\;10\;cm\;tube$). The leaching experiment was conducted over 60 days using I L of leachants whose pHs were adjusted to 2.0, 3.7, and 1.6, respectively with nitric acid, and also using lake water, according to the OECD guideline. Each leachate was analyzed for Cr and Cu using flame-AAS, and for As using vapor generation-AAS. Three metals were loathed at the highest levels at pH 2.0 but almost at similar levels at the other conditions. Cumulative quantifies over 60 days of a leaching period were in order of As>Cu>Cr. As was predicted to leach with an increase in flux over a 10 year period, while Cr and Cu fluxes were predicted to decrease with time. This result suggest that arsenic can pose a health risk to humans over a long period of time, when CCA-treated wood is used for building facilities (e.g., playgrounds, residential purposes, etc.) with which humans frequently contact.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.323-323
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• 2010

Saw damage of crystalline silicon wafer is unavoidable factor. Usually, alkali treatment for removing the damage has been carried out as the saw damage removal (SDR) process for priming the alkali texture. It usually takes lots of time and energy to remove the sawed damages for solar grade crystalline silicon wafers We implemented two different mixed acidic solution treatments to obtain the improved surface structure of silicon wafer without much sacrifice of the silicon wafer thickness. At the first step, the silicon wafer was dipped into the mixed acidic solution of $HF:HNO_3$=1:2 ration for polished surface and at the second step, it was dipped into the diluted mixed acidic solution of $HF:HNO_3:H_2O$=7:3:10 ratio for porous structure. This double treatment to the silicon wafer brought lower reflectance (25% to 6%) and longer carrier lifetime ($0.15\;{\mu}s$ to $0.39\;{\mu}s$) comparing to the bare poly-crystalline silicon wafer. With optimizing the concentration ratio and the dilution ratio, we can not only effectively substitute the time consuming process of SDR to some extent but also skip plasma enhanced chemical vapor deposition (PECVD) process. Moreover, to conduct alkali texture for pyramidal structure on silicon wafer surface, we can use only nitric acid rich solution of the mixed acidic solution treatment instead of implementing SDR.

• Journal of the Korean institute of surface engineering
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• v.25 no.3
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• pp.107-116
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• 1992

The optimum thickness of Pd-Ni plated layers used as an electrical contact film was investigated by evaluating mechanical, thermal and environmental characteristics. The variations of morphologies and chemical compositions were studied by using SEM, EDS and ESCA. As a result of wear test, the wear resistance behavior of the gold plated layers was not changed with the sliding velocity changes. The palladium-nickel plated layer showed better wear resistance than the gold plated layer at low sliding velocity, but it showed poor wear resistance at high sliding velocity. Under the thermal condition of $400^{\circ}C$ in air, the gold thickness of $2\mu\textrm{m}$ without underplate on phosphorous bronze formed copper oxide on the surface layer by rapid diffusion of copper whereas the gold thickness of $0.8\mu\textrm{m}$ deposited on nickel and palladium-nickel underplate was stable at $400^{\circ}C$. Under the sulfur dioxide environments, the gold thickness of $0.3\mu\textrm{m}$ deposited on the nickel thickness of$ 3\mu\textrm{m}$ and the palladium-nickel thickness of $2\mu\textrm{m}$ underplate was more corrosion-resistant than the gold thickness of $2\mu\textrm{m}$ without underplate on phosphorous bronze. Under the nitric acid vapor environment, corrosion resistance of the gold film was superior to an equivalent thickness of the palladium-nickel film.

• Journal of the Korean Chemical Society
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• v.38 no.12
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• pp.898-907
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• 1994

The solvent extraction of an inorganic trace mercury in sea water samples was studied using zinc diethyldithiocabamate $Zn(DDC)_2$ as chelating agent. The $Zn(DDC)_2$ which maintained the stability of DDC- in the acidic aqueous solution in the course of extraction was synthesized from NaDDC and $ZnSO_4$ in this laboratory. The trace of mercury(Ⅱ) was extracted at pH 3.0 from 100 ml of sea water into 10ml of chloroform containing 0.05 M $Zn(DDC)_2$ by shaking for 5 minutes. And from the organic phase, the $Hg(DDC)_2$ was back-extracted into 10ml of 1 to 1 mixed acid of each 3% (v/v) nitric acid and hydrochloric acid by shaking for 25 minutes. The mercury back-extracted was determined by a cold vapor atomic absorption spectrophotometry. The trace mercury(Ⅱ) was so successfully extracted that this procedure could be applied to its determination in the sea water. That is, the recoveries of mercury in two kinds of samples into which as given amount of Hg(Ⅱ) was spiked were 90.0% and 93.3%, respectively.