• Korean Chemical Engineering Research
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• v.50 no.2
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• pp.204-210
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• 2012

Nickel oxide thin films with 2.3 ${\mu}m$ thickness were prepared in order to overcome limitations of thickness with nm dimension by anodizing. For the electrolyte, ethylene glycol was used as solvent, and $NH_4F$ was added for source of $F^-$ ions. The anodizing experiments were carried out on various voltages such as 40, 60 V and 80 V for 12 hours. The thickness of NiO was changed according to the anodizing time and the voltage. However, destruction of Ni caused by rapid oxidation reaction occurred at 80 V. XRD results show that NiO was successfully created by anodizing.

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.29-34
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• 2008

In this paper, the DE(double erosion) cathode for the reactive magnetron sputtering system is developed for high deposition rate and high target utilization efficiency. The utilization efficiency of the developed DE cathode is 22% higher than that of normal SE(single erosion) cathode. Sputtering process for the nickel oxide thin films with the DE cathode is performed under the following conditions; power with $1kW{\sim}3kW$, pressure with 4mtorr and 8mtorr, oxygen flow ratio with $0%{\sim}80%$. As a result, the hysteresis phenomenon of discharge voltage in 4mtorr is lower than that in 8mtorr and the hysteresis phenomenon of discharge voltage is getting lower as the applied power is getting higher. The structure of cross section and surface roughness of the thin films are observed by FE-SEM and AFM. The structure of cross section of the thin films is columnar and the average surface roughness under oxygen flow ratio of 0%, 52.5% and 65.0% are $2.08{\AA}$, $2.20{\AA}$ and $0.854{\AA}$, respectively.

• Journal of the Korean Magnetics Society
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• v.22 no.2
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• pp.42-44
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• 2012

We have studied a means to control the composition of nickel-iron thin films. By changing current and voltage applied to a electroplating electrolyte we could manipulate the relative concentration of nickel and iron in the thin films, which caused variations of coercivity, squareness, and saturation magnetic field. As we increase the content of iron in the thin films by using potentiostatic and galvanostatic plating, the grain size was increased and the coercivity was reduced.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.293-297
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• 2016

Ni-C composite films were prepared by co-deposition using a combined technique of plasma CVD and ion beam sputtering deposition. Depending on the deposition conditions, Ni-C thin films manifested three kinds of microstructure: (1) nanocrystallites of non-equilibrium carbide of nickel, (2) amorphous Ni-C film, and (3) granular Ni-C film. The electrical resistivity was also found to vary from about $10^2{\mu}{\Omega}cm$ for the carbide films to about $10^4{\mu}{\Omega}cm$ for the amorphous Ni-C films. The Ni-C films deposited at ambient temperatures showed very low TCR values compared with that of metallic nickel film, and all the films showed ohmic characterization, even those in the amorphous state with very high resistivity. The TCR value decreased slightly with increasing of the flow rate of $CH_4$. For the films deposited at $200^{\circ}C$, TCR decreased with increasing $CH_4$ flow rate; especially, it changed sign from positive to negative at a $CH_4$ flow rate of 0.35 sccm. By increasing the $CH_4$ flow rate, the amorphous component in the film increased; thus, the portion of $Ni_3C$ grains separated from each other became larger, and the contribution to electrical conductivity due to thermally activated tunneling became dominant. This also accounts for the sign change of TCR when the filme was deposited at higher flow rate of $CH_4$. The microstructures of the Ni-C films deposited in these ways range from amorphous Ni-C alloy to granular structures with $Ni_3C$ nanocrystallites. These films are characterized by high resistivity and low TCR values; the electrical properties can be adjusted over a wide range by controlling the microstructures and compositions of the films.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.243-246
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• 1997

A new technique for low temperature crystallization of amorphous silicon, called field aided lateral crystallization(FALC) was attempted. To demonstrate the concept of FALC, thin layer of nickel(30${\AA}$) was deposited on top of amorphous silicon film and the electric field was applied during the crystallization. The effects of electric field on the crystallization behavior of amorphous silicon film were investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1182-1184
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• 2006

A mica has been introduced as a new substrate material for the fabrication of the poly-Si TFTs. A poly-Si film is produced on the mica substrate at $550^{\circ}C$ by the nickel-induced crystallization and the poly-Si TFTs on the mica substrate are successfully fabricated for the first time.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2000.10a
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• pp.181-187
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• 2000

This study is object to structural analysis comparison of continuous casting mold. A two-dimensional finite element model was developed to compute the temperature distribution, thermal stress and thermal strain behavior for continuous casting mold. For structural analysis using thermal analysis result from ANSYS. In other to structural analysis of continuous casting mold, many variables such as casting speed, cooling condition, film coefficient, convection and load condition are considered.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2000.10a
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• pp.200-205
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• 2000

This study is object to thermal analysis comparison of continuous casting mold. A two-dimensional transient finite element model was developed to compute the temperature distribution for continuous casting mold. For thermal analysis using analysis result from ANSYS. In other to thermal analysis of continuous casting mold, many variables such as casting speed, cooling condition, film coefficient, convection and load condition are considered.

• Bulletin of the Korean Chemical Society
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• v.15 no.11
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• pp.976-980
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• 1994

The sensitivity factors and the error propagation factors are defined for the three-parameter ellipsometry (TPE). The sensitivity factor is useful for understanding the nature of the TPE measurements in connection with determination of the optical properties and the thickness of a film. On the other hand, the error propagation factors provide a quantitative tool for predicting the optimum condition for TPE experiments. Their usefulness is demonstrated for the passive film formed on nickel in aqueous solution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.357-360
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• 2019

We demonstrate an alignment technology using an imprinting process on an inorganic NiOx film. The aligned nanopattern was fabricated on a silicon wafer by laser interference lithography. The aligned nano pattern was then imprinted onto the sol-gel driven NiOx film using an imprinting process at an annealing temperature of $150^{\circ}C$. After the imprinting process, parallel grooves had been formed on the NiOx film. Atomic force microscopy and water contact angle measurements were performed to confirm the parallel groove on the NiOx film. The grooves caused liquid crystal alignment through geometric restriction, similar to grooves formed by the rubbing process on polyimide. The liquid crystal cell exhibited a pretilt angle of $0.2^{\circ}$, which demonstrated homogeneous alignment.