• Korean Journal of Metals and Materials
• /
• v.48 no.7
• /
• pp.660-666
• /
• 2010

30 nm thick Ni layers were deposited on a glass substrate by e-beam evaporation. Subsequently, 30 nm or 60 nm ${\alpha}-Si:H$ layers were grown at low temperatures ($<220^{\circ}C$) on the 30 nm Ni/Glass substrate by catalytic CVD (chemical vapor deposition). The sheet resistance, phase, microstructure, depth profile and surface roughness of the $\alpha-Si:H$ layers were examined using a four-point probe, HRXRD (high resolution Xray diffraction), Raman Spectroscopy, FE-SEM (field emission-scanning electron microscopy), TEM (transmission electron microscope) and AES depth profiler. The Ni layers reacted with Si to form NiSi layers with a low sheet resistance of $10{\Omega}/{\Box}$. The crystallinty of the $\alpha-Si:H$ layers on NiSi was up to 60% according to Raman spectroscopy. These results show that both nano-scale NiSi layers and crystalline Si layers can be formed simultaneously on a Ni deposited glass substrate using the proposed low temperature catalytic CVD process.

• Korean Journal of Metals and Materials
• /
• v.50 no.6
• /
• pp.463-468
• /
• 2012

A 71.5 wt%Mg-23.5 wt%Ni-5 wt%$Fe_2O_3$ (Mg-23.5Ni-$5Fe_2O_3$) sample was prepared by a quite simple process, reactive mechanical grinding, and its hydriding and dehydriding properties were then investigated. The reactive mechanical grinding of Mg with Ni and $Fe_2O_3$ is considered to facilitate nucleation and shorten the diffusion distances of the hydrogen atoms. After the hydriding-dehydriding cycling, the Mg-23.5Ni-$5Fe_2O_3$ sample contained $Mg_2Ni$ phase. Expansion and contraction of the hydride-forming materials (Mg and $Mg_2Ni$) with the hydriding and dehydriding reactions are also considered to increase the hydriding and dehydriding rates of the mixture by forming defects and cracks leading to the fragmentation of the particles. The temperature dependence of the hydriding rate of the sample is discussed.

• Journal of the Korean Ceramic Society
• /
• v.56 no.1
• /
• pp.91-97
• /
• 2019

The effect of different Ni-containing additives on the sintering behavior and electric conductivity of the proton conducting electrolyte $BaCe_{0.35}Zr_{0.5}Y_{0.15}O_{3-{\delta}}$ (BCZY5) was investigated. Ni-doped, NiO-added, and $BaY_2NiO_5$(BYN)-added (all 4 mol%) BCZY5 samples were prepared by the solid state synthesis method and sintered at $1400^{\circ}C$ for 6 h. Among the three samples, the onset of densification was observed at the lowest temperature for NiO-added BCZY5, which is attributed to the formation of an intermediate phase at a low melting temperature. The BYN-added sample, where no consumption of the constitutional elements of the electrolyte was expected during sintering, exhibited the highest electrical conductivity whereas the doped sample had the lowest conductivity. The electrical conductivities at $500^{\circ}C$ under humid argon atmosphere were measured to be 2.0, 4.8, and $6.2mS{\cdot}cm^{-1}$ for Ni-doped and NiO- and BYN-added samples, respectively.

• Korean Journal of Metals and Materials
• /
• v.49 no.11
• /
• pp.905-909
• /
• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surfaces. One of the available front metal contacts is Ni/Cu plating, which can be mass produced via asimple and inexpensive process. A selective emitter, meanwhile, involves two different doping levels, with higher doping (${\leq}30{\Omega}/sq$) underneath the grid to achieve good ohmic contact and low doping between the grid in order to minimize the heavy doping effect in the emitter. This study describes the formation of a selective emitter and a nickel silicide seed layer for the front metallization of silicon cells. The contacts were thickened by a plated Ni/Cu two-step metallization process on front contacts. The experimental results showed that the Ni layer via SEM (Scanning Electron Microscopy) and EDX (Energy dispersive X-ray spectroscopy) analyses. Finally, a plated Ni/Cu contact solar cell displayed efficiency of 18.10% on a $2{\times}2cm^2$, Cz wafer.

• Journal of Surface Science and Engineering
• /
• v.54 no.1
• /
• pp.37-42
• /
• 2021

Electrodeposition is a synthetic method that allows fine control of the nucleation and growth factors of metals and is a suitable method for studying the nucleation and growth of Ni(OH)2. Hexa-methylenetetramine (HMT) helps to form Ni(OH)2 nanosheets by increasing the OH- of the nickel precursor solution and helps to improve the electrochemical properties of the electrode. In this study, the structural properties of Ni(OH)2 nanosheets according to the HMT concentration change using electrodeposition were studied. As the concentration of HMT increased, the size and thickness of the Ni(OH)2 nanosheet adsorbed on the surface increased and porosity increased. Also, the Scharifker-Hills nucleation theory model and experimental data were compared. In conclusion, the nanosheet shape of the HMT 7.5 mM sample electrodeposited with -0.85 V vs. Ag/AgCl grew most uniformly, and the best result was obtained as an electrode material for a pseudocapacitor.

• Journal of Hydrogen and New Energy
• /
• v.32 no.6
• /
• pp.464-469
• /
• 2021

A reforming catalyst for hydrogen production from ammonia is being studied. Non-novel metal based Ni catalysts for use in ammonia reforming processes are being developed. In this study, the ammonia reforming characteristics according to Ni content of the alumina pellet supported catalyst in the mid-temperature region were investigated under different space velocity. 20 Ni and 3,000 h^-1 showed the best catalytic activity with ammonia conversion of 63% among all conditions.

• Korean Journal of Materials Research
• /
• v.31 no.12
• /
• pp.672-676
• /
• 2021

In this paper, the effect of Ni (0, 0.5 and 1.0 wt%) additions on the microstructure, mechanical properties and electrical conductivity of cast and extruded Al-MM-Sb alloy is studied using field emission scanning electron microscopy, and a universal tensile testing machine. Molten aluminum alloy is maintained at 750 ℃ and then poured into a mold at 200 ℃. Aluminum alloys are hot-extruded into a rod that is 12 mm in diameter with a reduction ratio of 39:1 at 550 ℃. The addition of Ni results in the formation of Al₁₁RE₃, AlSb and Al3Ni intermetallic compounds; the area fraction of these intermetallic compounds increases with increasing Ni contents. As the amount of Ni increases, the average grain sizes of the extruded Al alloy decrease to 1359, 536, and 153 ㎛, and the high-angle grain boundary fractions increase to 8, 20, and 34 %. As the Ni content increases from 0 to 1.0 wt%, the electrical conductivity is not significantly different, with values from 57.4 to 57.1 % IACS.

• Journal of the Korean Vacuum Society
• /
• v.17 no.6
• /
• pp.528-537
• /
• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.

• Applied Biological Chemistry
• /
• v.39 no.4
• /
• pp.287-292
• /
• 1996

The present study was carried out to investigate the difference of absorption and translocation of Ni by radish grown for 45 days under factors such as the levels of Ni in soil, soil pH, competitive metal interactions, covering with soil, organic matter and lime. Germination rate of radish in soil treated by Ni 150 mg/kg was 40%. As soil pH was increased, the contents of Ni translocated to radish showed the negative correlation$(shoot=-0.965^{**},\;root= -0.837^{*})$. The Ni content in shoot and root of radish grown under 50 mg/kg Ni treated soil were slowly decreased with iron levels increased. However Ni content in shoot and root of radish grown under 50 mg/kg Ni treated soil showed increasing trend with the increasing the zinc levels. As covering with soil, organic matter and lime were treated, Ni contents of shoot and root in radishes were in the decreasing order of organic matter>covering with soil>lime.

• Journal of the Korean Chemical Society
• /
• v.31 no.6
• /
• pp.509-519
• /
• 1987

The tetradentate Schiff base ligand, 3,4-bis(salicylidene diimine) toluene, have been prepared by the reaction of salicylaldehyde with 3,4-diaminotoluene by Duff method. The Schiff base ligand reacts with Ni(II), Co(II), and Cu(II) ions to form new complexes, [Ni(o-BSDT)${\cdot}(H_2O)_2$], [Co(o-BSDT)${\cdot}(H_2O)$], and [Cu(o-BSDT)]. It seems that Ni(II) and Ni(II) complexes are hexacoordinated with the Schiff base ligand and two molecules of water, while the Cu(II) complexes are tetracoordinated with the Schiff base. The mole ratio of tetradentate Schiff base ligand to metals was found to be 1 : 1. The redox chemistry of these complexes was investigated by polarography and cyclic voltammetry with glassy carbon electrode in DMSO with 0.1M TEAP${\cdot}$[Ni(o-BSDT)${\cdot}(H_2O)_2$] hav EC reaction mechanisms which undergo a irreversible electron transfer followed by a fast chemical reaction. [Co(o-BSDT)${\cdot}(H_2O)_2$] undergoes a reduction of Co(II) to Co(I) and a oxidation of Co(II) to Co(III), and [Cu(o-BSDT)] undergoes a reduction of Cu(II) to Cu(I).