• Title/Summary/Keyword: NiO - CuO

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Fabrication and Characterization of Cu-Ni- YSZ SOFC Anodes for Direct Utilization of Methane via Cu pulse plating (펄스 도금법에 의한 메탄연료 직접 사용을 위한 Cu-Ni-YSZ SOFC 연료극 제조 및 특성평가)

  • Park, Eon-Woo;Moon, Hwan;Lee, Jong-Jin;Hyun, Sang-Hoon
    • Journal of the Korean Ceramic Society
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    • v.45 no.12
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    • pp.807-814
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    • 2008
  • The Cu-Ni-YSZ cermet anodes for direct use of methane in solid oxide fuel cells have been fabricated by electroplating Cu into the porous Ni-YSZ cermet anode. The uniform distribution of Cu in the Ni-YSZ anode could be obtained via pulse electroplating in the aqueous solution mixture of $CuSO_4{\cdot}5H_{2}O$ and ${H_2}{SO_4}$ for 30 min with 0.05 A of average applied current. The power density ($0.17\;Wcm^{-2}$) of a single cell with a Cu-Ni-YSZ anode was shown to be slightly lower in methane at $700^{\circ}C$, compared with the power density ($0.28\;Wcm^{-2}$) of a single cell with a Ni-YSZ anode. However, the performance of the Ni-YSZ anode-supported single cell was abruptly degraded over 21 h because of carbon deposition, whereas the Cu-Ni-YSZ anode-supported single cell showed the enhanced durability upto 52 h.

The effect of the process parameters on the electrical properties of Ni/Cr/Al/Cu alloy thin film (공정변수에 의한 Ni/Cr/Al/Cu계 박막의 전기적 특성)

  • 이붕주;박상무;박구범;박종관;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.725-728
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    • 2001
  • We have fabricated thin films using the DC/RF magnetron sputtering of 74wt%Ni-l8wt%Cr-4wt%Al-4wt%Cu alloy target and studied the effect of the process parameters on the electrical properties for low TCR(Temperature Coefficient of Resistance) films. In sputtering process, pressure, power and substrate temperature, are varied as controllable parameter. The films are annealed to 400$^{\circ}C$ in air and nitrogen atmosphere. The sheet resistance, TCR of the films increases with increasing annealing temperature. It abruptly increased as annealing temperature increased over 300$^{\circ}C$ in air atmosphere. From XRD, it is found that these results are due to the existence of NiO on film surface formed by annealing. As a results of them, TCR can be controlled by variation of sputter process parameter and annealing of thin film.

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A Study on the Influence of Ni and Si Content on the Characteristics of Cu-Ni-Si-P Alloy for Connector Materials (Connector용 Cu-Ni-Si-P합금의 특성에 미치는 Ni및 Si의 영향에 관한연구)

  • No, Han-Sin;Lee, Byeong-U;Lee, Gwang-Hak;Kim, Hong-Sik
    • Korean Journal of Materials Research
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    • v.4 no.8
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    • pp.877-887
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    • 1994
  • Cu-Ni-Si-P alloys have been studied in order to develop connector material which has a favorable combination of strength, electrical conductivity, elastic limit, thermal softening resistence and bend formability. Three kinds of trial alloys with various nickel and silicon content were melted and cast, hot rolled at about $900^{\circ}C$ and cold rolled. Mechanical properties and electrical conductivities of these alloys annealed at $450^{\circ}C$, $500^{\circ}C$ and $550^{\circ}C$ were investigated. An alloy with the composition of Cu-2.7%Ni-0.53%Si-O.O29%P, which shows a favorable combination of high strength and high electrical conductivity, has been developed. Various characteristics of the alloy 1 connector material were evaluated and compared with phospher bronze(C521OR-H) and brass(C26OOR-EH) connector material.

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Mossbauer Spectroscopic Study of La2-2xSr2xCu1-xFexO4-y(0≤x≤0.5) Solid-solution

  • Park, Jung-Chul;Byeon, Song-Ho;Kim, Don;Lee, Choong-Sub
    • Bulletin of the Korean Chemical Society
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    • v.25 no.1
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    • pp.97-100
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    • 2004
  • Tetragonal $K_2NiF_4$-type $La_{2-2x}Sr_{2x}Cu_{1-x}Fe_xO_{4-y}$ solid-solution have been synthesized by citrate based sol-gel method. The valence state of iron was determined by Mossbauer spectroscopy and subsequent iodometric titration clearly showed that the copper ions in this solid-solution are in the mixed valence state Cu(II/III). When x ${\geq}$ 0.3, Fe(III) is competing with the mixture of Cu(II) and Cu(III) and $La_{2-2x}Sr_{2x}Cu_{1-x}Fe_xO_{4-y}$ exhibits a metallic character. No evidence for Cu(II)-O-Fe(IV) ${\leftrightarrow}$ Cu(III)-O-Fe(III) valence degeneracy was observed. In contrast, a small amount of Fe(IV) is observed with increasing x (x = 0.4 and 0.5), revealing a semiconducting behavior. These results suggest that the electronic interaction of Cu(III)-O-Fe(III) contributes greatly to the metallic character, while the electronic interaction of Cu(II)-O-Fe(IV) deteriorates the metallic character of $La_{2-2x}Sr_{2x}Cu_{1-x}Fe_xO_{4-y}$.

Adsorption characteristics of synthetic heavy metals ($Zn^{2+}$, $Ni^{2+}$, $Cd^{2+}$, $Cu^{2+}$, and $Pb^{2+}$) by bentonite (벤토나이트에 의한 혼합 중금속($Zn^{2+}$, $Ni^{2+}$, $Cd^{2+}$, $Cu^{2+}$$Pb^{2+}$) 수용액상에서의 중금속 흡착 특성)

  • Shin, Woo-Seok;Kim, Young-Kee
    • Journal of the Korea Organic Resources Recycling Association
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    • v.22 no.2
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    • pp.17-26
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    • 2014
  • In this study, the adsorption efficiency of mixed heavy metals from an aqueous solution was examined using bentonite. The physical and chemical properties of bentonite was analyzed via scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FT-IR), Further, heavy metal adsorption was characterized using Freundlich and Langmuir equations. Equilibrium adsorption data were fitted well to the Langmuir model for bentonite. The adsorption uptake of heavy metals was high and followed the order $Pb^{2+}$ > $Cu^{2+}$ > $Cd^{2+}$ > $$Zn^{2+}{\sim_=}Ni^{2+}$$. The results also showed that adsorption uptake slightly increased as increasing pH from 6 to 10. The bentonite surface was observed viay SEM and FT-IR; Si-O and Si-O-Al were found to be the main functional groups by FT-IR analysis. From these results, the adsorption mechanisms of heavy metal were not only surface adsorption and ion exchange, but also surface precipitation. Thus, bentonite could be a useful adsorbent for treating heavy metal in aqueous solution.

Partial Substitution of Copper with Nickel for the Superconducting Bismuth Compound and Its Effect on the Physical and Electrical Properties

  • Kareem Ali Jasim;Riyam Abd Al-Zahra Fadil;Kassim Mahdi Wadi;Auday Hattem Shaban
    • Korean Journal of Materials Research
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    • v.33 no.9
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    • pp.360-366
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    • 2023
  • This study focuses on how the partial substitution of copper by nickel nanoparticles affects the electrical and structural properties of the Bi2Ba2Ca2Cu2.9Ni0.1O10+δ, Bi2Ba2Ca2Cu2.8Ni0.2O10+δ and Bi2Ba2Ca2Cu2.6Ni0.4O10+δ compounds. Approximate values of crystallization size and crystallization percentage for the three compounds were calculated using the Scherer, modified Scherer, and Williamson-Hall methods. A great similarity was observed in the crystal size values from the Scherer method, 243.442 nm, and the Williamson-Hall method, 243.794 nm for the second sample. At the same time this sample exhibited the highest crystal size value for the three methods. In the examination of electrical properties, the sample with 0.1 partial substitution, Bi2Ba2Ca2Cu2.9Ni0.1O10+δ was determined to be the best with a critical temperature of 100 K and an energy gap of 6.57639 × 10-21 MeV. Using the SEM technique to analyze the structural morphology of the three phases, it was discovered that the size of the granular forms exceeds 25 nm. It was determined that the samples' shapes alter when nickel concentration rises. The patterns that reveal the distribution of the crystal structure also exhibit clear homogeneity.

Synthesis of BiSrCaCu(Ni)O Ceramics from the Gel Precursors and the Effect of Ni Substitution

  • Ahn, Beom-Shu
    • Bulletin of the Korean Chemical Society
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    • v.23 no.9
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    • pp.1304-1323
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    • 2002
  • Superconducting BiSrCaCu(Ni)O ceramicss have been prepared by the gel method using an aqueous solution containing a tartaric acid. The aqueous solution of metal salts was concentrated without precipitation. The precursor so prepared was homogeneou s and calcined at $825^{\circ}C$ for 24 h to produce superconducting phase. The thermal decomposition of gels, the formation of superconducting phase, and their ceramic microstructure were studied using IR, TGA, XRD, resistance measurements, and SEM. This method is highly reproducible and leads to powders with excellent homogeneity and small particle size for easy sinterability. The nickel dopant substituting for Cu gives rise to the gradual decrease of the Tc. Phase pure 2212 ceramics were obtained at 825 $^{\circ}C$ for 24 h. SEM pictures showed that liquid phase was formed when the samples were sintered temperatures higher than 825 $^{\circ}C$.

The Effects of Al-Alloying Elements on the Melt Oxidation(II, Oxide Layer Shape and Microstructure) (Al-합금의 원소가 용융산화에 미치는 영향(ll. 산화층 형상과 미세구조))

  • Jo, Chang-Hyeon;Gang, Jeong-Yun;Kim, Il-Su;Kim, Cheol-Su;Kim, Chang-Uk
    • Korean Journal of Materials Research
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    • v.7 no.8
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    • pp.660-667
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    • 1997
  • AI-Mg-합금의 용융산화에 의해 생성되는 AlO$_{2}$O$_{3}$-복합재료의 미세구조에 미치는 합금원소의 영향을 연구하였다. AI-1Mg 합금과 AI-3Mg 합금을 기본으로하여 Si, Zn, Sn, Cu, Ni, Ca, Ce를 1, 3, 5 %를 무게비로 첨가하였다. 각 합금을 1473K에서 20시간 유지하여 산화시킨 후 산화층의 거시적 형상과 미세구조를 광학현미경으로 관찰하였다. 각 미세구조의 상분율을 상분석기로 측정하였다. 산화층의 최첨단면은 SEM과 EDX로 관찰하고 분석하였다. Cu나 Ni를 첨가한 합금으로부터 성장한 산화층의 미세구조가 가장 치밀하였다. Zn이 포함된 합금으로부터 성장한 산화층 최첨단 성장면에는 ZnO가 관찰되었다. Zn이 포함되지 않은 다른 합금의 성장 전면에는 항상 MgAi$_{2}$O$_{4}$상이 관찰되었다.

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Study on Multilayer Chip Inductor (적층 칩 인덕터에 관한 연구)

  • Kim, Kyung-Young;Lee, Jong-Kyu;Kim, Wang-Sup;Choi, Hwan
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.28A no.11
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    • pp.880-886
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    • 1991
  • Multi-layered chip inductors were prepared with good magnetic properties by sintering Ni-Zn-Cu ferrites at a lower temperature. A slurry with 49.5mol%Fe$_{2}O_{3}$, 20.5mol% ZnO, 20mol% NiO and 10nol% CuO was cast into tapes with 60-100\ulcorner of thickness with a doctor blade techniques. The tapes were screen-pronted with 100% silver electrodes, layered and pressed at 250kg/cm$^{2}$ and then sintered ant 900$^{\circ}C$ for 2h. Inductance with internal electrodes printed 5, 10, and 15 turns showed 4.9, 15 and 24$\mu$, respectively, at 1MHz.

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