• Journal of Magnetics
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• v.10 no.4
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• pp.133-136
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• 2005

The NiMn/NiFe bilayer structure which was short time annealed in order to induce unidirectional anisotropy were studied as a function of annealing temperature. The maximum exchange bias field of NiMn/NiFe bilayer was presented at $250^{\circ}C$ after short time annealing process with no external field. The appearance of exchange bias was due to phase transformation of NiMn layer. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of unidirectional anisotropy and uniaxial anisotropy. The resonance field and the line width from FMR measurement were also analysed with annealing temperature.

• Journal of the Korean Magnetics Society
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• v.12 no.4
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• pp.132-136
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• 2002

Enhancement of crystallinity and exchange bias characteristics for NiFe/FeMn/NiFe trilayer with Si buffer layer fabricated by ion-beam deposition were examined. A Si buffer layer promoted (111) texture of fcc crystallities in the initial growth region of NiFe layer deposited on it. FeMn layers deposited on Si/NiFe bilayer exhibited excellent (111) crystal texture. The antiferromagnetic FeMn layer between top and bottom NiFe films with the buffer Si 50 ${\AA}$-thick induced a large exchange coupling field Hex with a different dependence. It was found that H$\sub$ex/ of the bottom and top NiFe films with Si buffer layer revealed large value of about 110 Oe and 300 Oe, respectively. In the comparison of two Ta and Si buffer layers, the NiFe/FeMn/NiFe trilayer with Si could possess larger exchange coupling field and higher crystallinity.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.180-184
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• 2008

The relation of ferromagnet anisotropic magnetization and the antiferromagnet atomic spin configuration has been investigated for variously angles of unidirectional deposition magnetic field of FeMn layer in Corning glas/Ta(5 nm)/NiFe(7 nm)/FeMn(25 nm)/ Ta(5 nm) multilayer prepared by ion beam deposition. Three unidirectional deposition angles of FeMn layer are $0^{\circ},\;45^{\circ}$, and $90^{\circ}$, respectively. The exchange bias field ($H_{ex}$) obtained from the measuring easy axis MR loop was decreased to 40 Oe in deposition angle of $45^{\circ}$, and to 0 Oe in the angle of $90^{\circ}$. One other side hand, $H_{ex}$ obtained from the measuring hard axis MR loop was increased to 35 Oe in deposition angle of $45^{\circ}$, and to 79 Oe in the angle of $90^{\circ}$. Although the difference of uniderectional axis between ferromagnet NiFe and antiferromagnet FeMn was 90o, the strong antiferromagnetic dipole moment of FeMn caused to rotate the weak ferromagnetic dipole moment of NiFe in the interface. This result implies that one of origins for exchange coupling mechanism depends on the effect of magnetic field angle during deposition of antiferromgnet FeMn layer.

• Journal of Magnetics
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• v.15 no.1
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• pp.17-20
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• 2010

The relationship between ferromagnet anisotropic magnetization and the antiferromagnet atomic spin configuration was investigated for various angles of the uniaxial deposition magnetic field of the FeMn layer in the Corning glass/Ta(5nm)/NiFe(7nm)/FeMn(25nm)/Ta(5nm) multilayer that was prepared by the ion beam sputter deposition. The exchange bias field ($H_{ex}$) obtained from the measurement of the easy-axis MR loop decreased to 40 Oe at the deposition field angle of $45^{\circ}$, and to 0 Oe at the angle of $90^{\circ}$. When the difference between the uniaxial axis between the ferromagnet NiFe and the antiferromagnet FeMn was $90^{\circ}$, the strong antiferromagnetic dipole moment of FeMn caused the weak ferromagnetic dipole moment of NiFe to rotate in the interface.

• Journal of Magnetics
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• v.14 no.1
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• pp.36-41
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• 2009

Magneto-optical Kerr effect (MOKE) magnetometry was used to investigate magnetization reversal dynamics in 30-nm NiFe/15-nm FeMn, 15-nm FeMn/30-nm CoFe bilayers, and 30-nm NiFe/(2,10)-nm FeMn/30-nm CoFe trilayers. The in-plane magnetization components of each ferromagnetic layer, both parallel and perpendicular to the applied field, were separately determined by measuring the longitudinal and transverse MOKE hysteresis loops from both the front and back sides of the film for an oblique incident s-polarized beam. The magnetization of the FeMn/CoFe bilayer was reversed abruptly and symmetrically through nucleation and domain wall propagation, while that of the NiFe/FeMn bilayer was reversed asymmetrically with a dominant rotation. In the NiFe/FeMn/CoFe trilayers, the magnetic reversal of the two ferromagnetic layers proceeded via nucleation and domain wall propagation for 2-nm FeMn, but via asymmetric rotation for 10-nm FeMn. The exchange-biased ferromagnetic layers showed the magnetization reversal along the same path in the film plane for the decreasing and increasing field branches from transverse MOKE hysteresis loops, which can be qualitatively explained by the theoretical model of the exchange-biased ferromagnetic/antiferromagnetic systems.

• Journal of the Korean Magnetics Society
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• v.9 no.3
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• pp.166-172
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• 1999

The magnetic properties between Mn-Ir antiferromagnetic layer and Ni-Fe ferromagnetic layer have been investigated in Mn-Ir/Ni-Fe/Zr on Si wafer formed by magnetron sputtering. Mn-Ir was sputtered from Ir chips and Mn target using D.C. power, Ni-Fe and Zr were deposited from Ni-Fe and Zr targets using D.C. power under Ar atmosphere. We studied the dependence of the magnetic properties on Ir content of Mn-Ir layer for Mn-Ir/Ni-Fe bilayer, and obtained the highest $H_ex$ of 219 Oe and the low $H_c$ of 30 Oe. And then focused on the effect of base pressure for Mn-Ir containing multilayers. Our experimental data showed that if the base pressure is higher than $3.0{\times}10^{-6}\;Torr$, the exchange anisotropy of Mn-Ir/Ni-Fe/Zr disappeared probably due to the grain refining of Mn-Ir film. In addition we have studied the dependence of Zr buffer on magnetic properties of Mn-Ir/Ni-Fe/Zr multilayers, and observed that Zr buffer about (111) texture and lower $H_c$ of Mn-Ir/Ni-Fe/Zr multilayer.

• Journal of Magnetics
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• v.10 no.2
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• pp.44-47
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• 2005

The oscillatory interlayer exchange coupling (IEC) has been shown in pinned $[CoFe/Pt(t_{pt})/CoFe]/IrMn$ multi-layers with perpendicular anisotropy. The period of oscillation corresponds to about 2 monolayers of Pt. The oscillatory behavior of IEC depending on the nonmagnetic metallic Pt thickness is thought to be related the antiferromagnetic ordering induced by IrMn layer. Oscillatory IEC as function of insulating NiO thickness has been observed in $[Pt/CoFe]_4/NiO(t_{NiO})/[CoFe/Pt]_4$ multilayers. The effect of N (number of bilayer repeats) upon the magnetic property of [Pt/CoFe]N/IrMn is also studied.

• Journal of Magnetics
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• v.7 no.3
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• pp.80-93
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• 2002

The role of magnetic anisotropy of the antiferromagnetic layer on the magnetization process of exchange coupled polycrystalline ferromagnetidantiferromagnetic bilayers is discussed. In order to elucidate the magnetic torque response of Ni-Fe/Mn-Ir bilayers, the single spin ensemble model is newly introduced, taking into account the two-dimensionally random distribution of the magnetic anisotropy axes of the antiferromagnetic grains. The mechanism of the reversible inducement of the exchange anisotropy along desirable directions by field cooling procedure is successfully explained with the new model. Unidirectional anisotropy constant, J$k$, of polycrystalline Ni-Fe/Mn-Ir and Co-Fe/Mn-Ir bilayers is investigated as functions of the chemical composition of both the ferromagnetic layer and the antiferromagnetic layer. The effects of microstructure and surface modification of the antiferromagnetic layer on JK are also discussed. As a notable result, an extra large value of J$k$, which exceeds 0.5 erg/cm$^2$, is obtained for $Co_{70}Fe_{30}Mn_{75}Ir_{25}$ bilayer with the ultra-thin (50${\AA}$∼100${\AA}$) Mn-Ir layer. The exchange anisotropy of $Co_{70}Fe_{30}$ 40 ${\AA}/Mn_{75}Ir_{25}$ 100 ${\AA}$ bilayer is stable for thermal annealing up to $400{^{\circ}C}$, which is sufficiently high for the application of spin valve magnetoresistive devices.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.11a
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• pp.37-37
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• 2006

• Journal of the Korean Magnetics Society
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• v.20 no.2
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• pp.35-40
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• 2010

The GMR-SV (giant magnetoresistance-spin valve) device depending on the micro patterned features according to two easy directions of longitudinal and transversal axes has been studied. The GMR-SV multilayer structure was Ta(5 nm)/NiFe(8 nm)/Cu(2.3 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm). The applied anisotropy direction of the GMR-SV thin film was performed under the magnitude of 300 Oe using by permanent magnet during the deposition. The size of micro patterned device was a $1\;{\times}\;18\;{\mu}m^2$ after the photo lithography process. In the aspects of the shape magnetic anisotropy effect, there are two conditions of fabrication for GMR-SV device. Firstly, the direction of sensing current was perpendicular to the magnetic easy axis of the pinned NiFe/IrMn bilayer with the transversal direction of device. Secondly, the direction of shape magnetic anisotropy was same to the magnetic easy axis of the free NiFe layer with the longitudinal direction of device.