• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.50-51
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• 2000

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.2
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• pp.56-60
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• 2003

In this work, we have fabricated thin film resistors using the DC/RF magnetron sputter of 51wt%Ni-41wt%Cr-8wt%Si alloy target and studied the effect of the process parameters on the electrical properties. In fabrication process, sputtering power, substrate temperature and annealing temperature have been varied as controllable parameters. TCR decreases with increasing the substrate temperature, but TCR increases over 300 [$^{\circ}C$]. The films are annealed to 400 [$^{\circ}C$] in air atmosphere, TCR increases with increasing the annealing temperature. The resistivity was 172 [${\mu}{\Omega}{\cdot}cm$] and 209 [${\mu}{\Omega}{\cdot}cm$] for the RF and DC as a sputtering power sources, respectively. Also, TCR was -52 [$ppm/^{\circ}C$] and -25 [$ppm/^{\circ}C$]. As a results of them, it is suggested that the sheet resistance and TCR of thin films can be controlled by variation of sputter process parameter and annealing of thin film.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1637-1639
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• 2000

Resister networks are used widely in many, high frequency applications for attenuators. In this paper we studied the frequency characteristics of attenuator using network analyzer and compared Ni-Cr thin film resistor with thick film resistor attenuator. Also from return loss, insertion loss and VSWR we obtained the maximum available frequency of these attenuators.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.631-632
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• 2006

Cr-C-Ni composites were synthesized in situ from elemental powders of Cr, Ni and C by high energy milling followed by reactive sintering. The milled powders with the grain size in nano-scale were pressed to compacts and sintered. During the following thermal treatment at first the chromium carbide was formed and then the $Cr_3C_2-Ni$ cermets were sintered in one cycle. The interface between the binder phase and the carbide grains of the in situ composite has a good bonding strength as it is not contaminated with oxidation films or other detrimental surface reactions.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.141-149
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• 1998

The W thin films were deposited on Si3N4 by a PECVD technique. The effects of substrate temperature and gas flow ratio on the properties of the W films were investigated. The deposition of W films were limited by surface reaction at the temperature range of 150>~$250^{\circ}C$, W films had the deposition rate of 150~530 $\AA$/min and stress of 0.85~$14.35\times10 ^9 \textrm {dynes/cm}^2}$ at various substrate temperatures and $SiH_4/WF_6$ flow ratios. $SiH_4/WF_6$ flow ratio affected the deposition rate and stress of the W films, expecially, excessive flow of SiH4 abruptly changed the structure, chemical bonding, and stress of the W films. Among the deposited W films on TiN, Ti, Mo, NiCr and Al adhesion layer, the one on the Al had the best adhesion property.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.913-917
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• 2003

In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.587-594
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• 2016

Various surface treatments and thin film coating processes on the surface of injection die steel have been developed to extend the life. Most of previous studies were mainly focused on investigating the wear and static bonding behavior of thin films. In this study complex surface treatments of DLC coating combined with ion nitriding were applied to increase fatigue life and wear resistance. Ion nitriding, DLC coating, and DLC coating following nitriding on the surface of Fe-3.0Ni-0.7Cr-1.4Mn-X steel were investigated to uncover the beneficial effect which is applicable to injection die. The effect of various surface treatments and coating conditions on high cycle fatigue resistance was studied. Surface morphology change during fatigue tests were observed with AFM. Fatigue life of the die steel increased by 10 to 1,000 times at the various level of stress amplitudes in the condition of DLC coating following the ion nitriding for 3 hrs comparing with the only DLC coated condition.

• Proceedings of the Korean Magnestics Society Conference
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• 1991.05a
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• pp.73-74
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• 1991

The films with ferromagnetic fine particles dispersed in nonmagnetic matrix, such as $Fe-Al_2O_3$ and Fe-Cu have been studied for use of magnetic recording medium, optically device and sensor. Their magnetic properties depend strongly on structural parameter such as size and volume fraction of ferromagnetic particles. Fe-Cr-Ni alloy sputtered films also have microstructure with ferromagnetic -- b.c.c phase and nonmagnetic f.c.c phase grains. Magnetic properties of these films depend strongly on such a unique structure. These are depend on the ratio in volume of ferromagnetic particles to nonmagnetic ones $V_F/V_N$, the saturation magnetization Ms increased with increase of $V_F/V_N$. The coercivity Hc of the as-deposited films took maximum value of about 200 Oe at adequate $V_F/V_N$ and then Ms and Squareness S were 500 emu/cc and 0.5, respectively.(omitted)

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.357-361
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• 1998

For CoZr/Ag/CoCr trilayered films deposited by DC and FR magnetron sputtering method, ferromagentic resonance experiments have been used to investigate the dependence of the exchange coupling between CoZr and CoCr layers separated by Ag layer on the thickness of the Ag layer. The coupling strength K increases with increasing Ag thickness up to 10 $\AA$ with a maximum value of 748 Oe, but oscillates with increasing Ag thickness in the range from 20 to 100 $\AA$. The coupling strength is positive for all samples. Hence, it seems that the exchange coupling between CoZr and CoCr layers separated by Ag layer is ferromagnetic.