• 센서학회지
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• 제17권5호
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• pp.369-374
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• 2008

A novel fiber optic surface plasmon resonance (SPR) sensor using cyclic olefin copolymer (COC) prism with the spectral modulation is presented. The SPR sensor chip is fabricated using the SU-8 photolithography, Ni-electroplating and COC injection molding process. The sidewall of the COC prism is partially deposited with Au/Cr (45/2.nm thickness) by e-beam evaporator, and the thermal bonding process is conducted for micro fluidic channels and optical fibers alignment. The SPR spectrum for a phosphate buffered saline (0.1.M PBS, pH.7.2) solution shows a distinctive dip at 1300.nm wavelength, which shifts toward longer wavelength with respect to the bovine serum albumin (BSA)concentrations. The sensitivity of the wavelength shift is $1.16\;nm{\cdot}{\mu}g^{-1}{\cdot}{\mu}l^{-1}$. From the wavelength of SPR dips, the refractive indices (RI) of the BSA solutions can be theoretically calculated using Kretchmann configuration, and the change rate of the RI was found to be $2.3{\times}10^{-5}RI{\cdot}{\mu}g^{-1}{\cdot}l^{-1}$. The realized fiber optic SPR sensor with a COC prism has clearly shown the feasibility of a new disposable, low cost and miniaturized SPR biosensor for biochemical molecular analyses.

• Computers and Concrete
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• 제31권4호
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• pp.349-358
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• 2023

This paper describes an in-depth analysis on flexural strength of a girder-deck system experiencing a strand debonding damage with various strengthening systems, based on finite element software ABAQUS. A detailed finite element analysis (FEA) model was developed and verified against the relevant experimental data performed by other researchers. The proposed analytical model showed a good agreement with experimental data. Based on the verified FE model, over a hundred girder-deck systems were investigated with the consideration of following variables: 1) debonding level, 2) span-to-depth ratio (L/d), 3) strengthening type, 4) strengthening material thickness. Based on the data above, a new detailed analytical model was developed and proposed for estimating residual flexural strength of the strand-debonding damaged girder-deck system with strengthening systems. It was demonstrated that both finite element model and analysis model could be used to predict flexural behaviors for debonding damaged prestressed girder-deck systems. Since the strands are debonding from surrounding concrete over a certain zone over the length of the beam, the increase of strain in strands can be linked with a ratio ψ, which is L_p/c. The analytical model was proposed and developed regarding the ratio ψ. By conducting procedure of calculating ψ, the ψ value varies from 9.3 to 70.1. Multiple nonlinear regression analysis was performed in Software IBM SPSS Statistics 27.0.1 to derive equation of ψ. ψ equation was curved to be an exponential function, and the independent variable (X) is a linear function in terms of three variables of debonding level (λ), span length (L), and amount of strengthening material (A_s). The coefficient of determinate (R²) for curve fitting in nonlinear regression analysis is 0.8768. The developed analytical model was compared to the ultimate capacities computed by FEA model.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.