• 제목/요약/키워드: Ni-Co-Sic

검색결과 6건 처리시간 0.019초

Effects of the Electroplating Duration on the Mechanical Property of the Ni-Co-SiC Composite Coatings

  • Kim, Sung-Min;Lee, Hong-Kee
    • 한국표면공학회지
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    • 제43권6호
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    • pp.255-259
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    • 2010
  • In this work, Ni-Co composites incorporated with nano-sized SiC particles in the range of 45-55 nm are prepared by electroplating. The effects of plating duration on the chemical composition, surface morphology, crystalline structures and hardness have been studied. The maximum hardness of Ni-Co-SiC composite coating is approximately 633 Hv at plating duration of 1 h. The hardness is gradually decreased with increasing plating duration, which can be attributed to the growth of crystalline size and the agglomerates of SiC nano-particles. It is therefore explained that the grain refinement of Ni-Co matrix and stable dispersion of SiC particles play an important role for strengthening, which indicate Hall-Petch relation and Orowan model were dominant for hardening of Ni-Co-SiC composite coatings.

전해석출에 의한 단계적 Ni-SiC 복합코팅층 제조공정에 관한연 (A Study on the Graded Ni-SiC Composite Coating by Electrodeposition)

  • 김선규
    • 한국표면공학회지
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    • 제30권5호
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    • pp.347-354
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    • 1997
  • Composite plating is a method of co-depositing fine particles of metallic, non-metallic compound or polymers in the plated layer to improve material properties such as were-resistance, lubrication, or corrosion resistance. Graded Ni-Sic composite coating were produced in this research. Prior to produce Graded Ni-SiC composite coatings, effects of particle size, particle content, pH of electrolyte, temperature, current density, stirring rate on the amount of SiC deposited in the Ni layer were investigated. By manipulating current density and plating time properties of these coating were evaluated by micro-indentation hardness test.

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SiC 기판상의 금속박막의 표면구조 및 임계하중 (Surface structure and critical load of thin metal films on SiC substrate)

  • 임창성
    • 한국결정성장학회지
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    • 제5권4호
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    • pp.358-369
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    • 1995
  • SIC와 금속박막의 반응에 의한 표면구조 및 부착력이 550$^{\circ}C$에서 1450$^{\circ}C$의 온도범위에서 조사되어졌다. SiC/Co계에서는 850$^{\circ}C$ 이상에서, SiC/Ni계에서는 650$^{\circ}C$ 이상에서 여러 가지 규소화물이 형성된 반응이 최초로 나타났다. 코발트는 1050$^{\circ}C$, 0.5 h에서 니켈은 950$^{\circ}C$, 2h에서 SiC와 완전히 반응하여 소모되었다. SiC/Co에서는 CoSi상이 SiC/Ni에서는 Ni$_{2}$Si상이 1250$^{\circ}C$와 1050$^{\circ}C$의 반응에서까지 각각 열역학적으로 안정하게 관찰되어졌다. 탄소는 SiC/Co 반응표면에서는 1450$^{\circ}C$ 이상에서 그리고 SiC/Ni 반응표면에서는 1250$^{\circ}C$ 이상에서의 온도에서 흑연으로 결정화되었다. SiC기판과 금속박막의 임계하중이 scratch test 방법에 의하여 정성적으로 비교되어져, 850$^{\circ}C$에서 1050$^{\circ}C$의 온도범위에서 SiC/Ni couple이 20~33N의 상대적으로 높은 값을 나타내었다.

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NCM(Li[Ni,Co,Mn]O2)계 폐 리튬이차전지로부터 NiSO4의 회수와 이를 이용한 LiNiO2 제조 및 전기화학적 특성 (Fabrication of LiNiO2 using NiSO4 Recovered from NCM (Li[Ni,Co,Mn]O2) Secondary Battery Scraps and Its Electrochemical Properties)

  • 곽용규;김미소;김유영;최임식;박동규;안인섭;조권구
    • 한국분말재료학회지
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    • 제21권4호
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    • pp.286-293
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    • 2014
  • The electrochemical properties of cells assembled with the $LiNiO_2$ (LNO) recycled from cathode materials of waste lithium secondary batteries ($Li[Ni,Co,Mn]O_2$), were evaluated in this study. The leaching, neutralization and solvent extraction process were applied to produce high-purity $NiSO_4$ solution from waste lithium secondary batteries. High-purity NiO powder was then fabricated by the heat-treatment and mixing of the $NiSO_4$ solution and $H_2C_2O_4$. Finally, $LiNiO_2$ as a cathode material for lithium ion secondary batteries was synthesized by heat treatment and mixing of the NiO and $Li_2CO_3$ powders. We assembled the cells using the $LiNiO_2$ powders and evaluated the electrochemical properties. Subsequently, we evaluated the recycling possibility of the cathode materials for waste lithium secondary battery using the processes applied in this work.

Study on Co- and Ni-base $Si_2$ for SiC ohmic contact

  • 김창교;양성준;노일호;장석원;조남인;정경화
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.167-171
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    • 2003
  • We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.

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Co, Ni 농도 변화에 따른 나노 SnO2 센서의 감응 특성 (Gas Sensing Characteristics of Nano Sized SnO2 Sensors for Various Co and Ni Concentration)

  • 이지영;유윤식;유일
    • 한국재료학회지
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    • 제21권10호
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    • pp.546-549
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    • 2011
  • Nano-sized $SnO_2$ thick films were prepared by a screen-printing method onto $Al_2O_3$ substrates. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box as a function of the detection gas. The nano-sized $SnO_2$ thick film sensors were treated in a $N_2$ atmosphere. The structural properties of the nano $SnO_2$with a rutile structure according to XRD showed a (110) dominant $SnO_2$ peak. The particle size of $SnO_2$:Ni nano powders at Ni 8 wt% was about 45 nm, and the $SnO_2$ particles were found to contain many pores according to the SEM analysis. The sensitivity of the nano $SnO_2$-based sensors was measured for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in the target gases. The results showed that the best sensitivity of $SnO_2$:Ni and $SnO_2$:Co sensors for $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature was observed in $SnO_2$:Ni sensors doped with 8 wt% Ni. The response time of the $SnO_2$:Ni gas sensors was 10 seconds and recovery time was 15 seconds for the $CH_4$ and $CH_3CH_2CH_3$ gases.