• 한국분말재료학회지
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• 제18권1호
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• pp.49-55
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• 2011

Ni nanowires were fabricated using anodic aluminum oxide (AAO) membrane as a template by electrochemical deposition. The nanowires were formed within the walls of AAO template with 200 nm in pore diameter. After researching proper voltage and temperature for electrochemical deposition, the length of Ni nanowires was controlled by deposition time and the supply of electrolyte. The morphology and microstructure of Ni nanowires were investigated by field emission scanning electron microscope (FE-SE), X-ray diffraction (XRD) and transmission electron microscope (TEM).

• Bulletin of the Korean Chemical Society
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• 제35권11호
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• pp.3227-3231
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• 2014

Bamboo-like Te nanotubes were synthesized via the galvanic displacement reaction of NiFe nanowires with Ni-rich and Fe-rich segments. The thick and thin components of the synthesized Te nanotubes were converted from the Ni-rich and Fe-rich segments in the NiFe nanowires respectively. The dimensions of the Te nanotubes were controlled by employing sacrificial NiFe nanowires with tailored dimensions as the template for the galvanic displacement reaction. The segment lengths of the Te nanotubes were found to be dependent on those of the sacrificial NiFe nanowires. The galvanic displacement reaction was characterized by analyzing the open circuit potential and the corrosion resistance.

• Applied Science and Convergence Technology
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• 제25권6호
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• pp.149-153
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• 2016

Thermal oxidation has significant potential for use in synthesizing metal-oxide nanostructures from metallic materials. However, this method has limited applicability to the synthesis of multi-morphology NiO from Ni foil. Techniques consisting of mechanical and chemical approaches were used to pre-treat the Ni foil (prior to oxidation) to promote the formation of nanowires and nanoplates on the NiO layer. These morphologies were realized on the Ni foils scratched by sand paper and a knife, respectively, and subsequently heat-treated at $500^{\circ}C$ for 24 h. Small nanowires (diameter: <10 nm) formed on the Ni foil treated by absolute $HNO_3$ and then oxidized at $500^{\circ}C$ for 24 h. The formation of various morphologies (on the pre-treated Ni foil), which differ from that formed in the case of pristine Ni foil after oxidation, may be attributed to the surface melting phenomenon that occurs during the nucleation process.

• 한국자기학회지
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• 제16권4호
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• pp.193-196
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• 2006

제일원리적 국소 스핀밀도 근사에 의한 계산방법을 이용하여 Ni 나노와이어에 대한 전자구조와 자기적 성질을 연구하였다. 단위 세포당 Ni 원자의 개수(n = 1 − 4)에 따른 구조적 특성에 따라 각각의 나노와이어에 대한 결합에너지와 자기모멘트를 계산하였다. 계산결과 지그재그-사각형 $Ni_4$ 나노와이어가 에너지적으로 가장 안정하였다. 또한 Ni 나노와이어의 자기모멘트는 선형 나노와이어 Ni1가 $1.34 {\mu_B}/atom$ 로 가장 큰 값을 나타냈으며, 단위 세포당 원자 개수가 증가될수록 자기모멘트는 감소하여 사각형 나노와이어 $Ni_4$의 자기모멘트가 $0.91 {\mu_B}/atom$ 로 가장 작은 값을 나타냈다. $Ni_n$(n = 1 − 4)의 각각의 구조들에 대한 상태밀도, 에너지 띠 등의 전자구조 계산결과를 제시하고 논의 검토하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.259-259
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• 2015

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was deposited before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. This Ni diffusion through an ITO NW was investigated by transmission electron microscope to observe the Ni-tip sitting on a single crystalline ITO NW. Meanwhile, a single crystalline ITO structure was found at bottom and body part of a single ITO NW without remaining of Ni atoms. This indicates the Ni atoms diffuse through the oxygen vacancies of ITO structure. Rapid thermal process (RTP) applied to generate an initial stage of a formation of Ni nanoparticles with variation in time periods to demonstrate the existence of an optimum condition to initiate ITO NW growth. Modulation in ITO sputtering condition was applied to verify the ITO NW growth or the ITO film growth. The Ni-assisted grown ITO layer has an improved electrical conductivity while maintaining a similar transmittance value to that of a single ITO layer. Electrically conductive and optically transparent nanowire-coated surface morphology would provide a great opportunity for various photoelectric devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.597-597
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• 2012

A simple solution-based method is developed to deposit crystalline ultrathin (2 nm) nickel hydroxide on vertically grown ZnO nanowires to achieve high specific capacitance and long-term life for flexible and wearable energy storage devices. Ultrathin crystalline $Ni(OH)_2$ enables fast and reversible redox reaction to improve the specific capacitance by utilizing maximum number of active sites for the redox reaction while vertically grown ZnO nanowires on wearable textile fiber effectively transport electrolytes and shorten the ion diffusion path. Under the highly flexible state $Ni(OH)_2$ coated ZnO nanowires electrode shows a high specific capacitance of 2150 F/g (based on pristine $Ni(OH)_2$ in 1 M LiOH aqueous solution with negligible decrease in specific capacitance after 1000 cycles. The synthesized energy-storage electrodes are easy-to-assemble which can provide unprecedented design ingenuity for a variety of wearable and flexible electronic devices.

• 한국결정성장학회지
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• 제16권6호
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• pp.256-259
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• 2006

Vapor phase epitaxy(VPE)법을 사용하여 amorphous $SiO_x$. nanowires를 성장시켰다. Ni thin film을 촉매로 사용하여 Si 기판위에 $800{\sim}1100^{\circ}C$ 범위의 온도에서 성장시켰으며, $SiO_x$ nanowires의 성장 메커니즘은 Vapor-liquid-solid(VLS)으로 확인되었다. $SiO_x$ nanowires의 shape와 morphology는 scanning electron microscope(SEM)으로 분석하였으며, cotton-like형태이고 길이는 $10{\mu}m$정도였다. 그리고 구조적 특징은 transmission electron microscope(TEM)으로 관찰하였고, $SiO_x$ nanowires의 성분 분석은 energy dispersed X-ray spectroscopy(EDS)로 하였다. EDX spectrum으로 nanowires가 Si와 O로 구성되어졌음을 확인하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.27.1-27.1
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• 2006

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 춘계학술발표대회 및 제12회 신소재 심포지엄
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• pp.30.2-30.2
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• 2007

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.390.2-390.2
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• 2016

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.