• Journal of Powder Materials
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• v.18 no.1
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• pp.49-55
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• 2011

Ni nanowires were fabricated using anodic aluminum oxide (AAO) membrane as a template by electrochemical deposition. The nanowires were formed within the walls of AAO template with 200 nm in pore diameter. After researching proper voltage and temperature for electrochemical deposition, the length of Ni nanowires was controlled by deposition time and the supply of electrolyte. The morphology and microstructure of Ni nanowires were investigated by field emission scanning electron microscope (FE-SE), X-ray diffraction (XRD) and transmission electron microscope (TEM).

• Bulletin of the Korean Chemical Society
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• v.35 no.11
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• pp.3227-3231
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• 2014

Bamboo-like Te nanotubes were synthesized via the galvanic displacement reaction of NiFe nanowires with Ni-rich and Fe-rich segments. The thick and thin components of the synthesized Te nanotubes were converted from the Ni-rich and Fe-rich segments in the NiFe nanowires respectively. The dimensions of the Te nanotubes were controlled by employing sacrificial NiFe nanowires with tailored dimensions as the template for the galvanic displacement reaction. The segment lengths of the Te nanotubes were found to be dependent on those of the sacrificial NiFe nanowires. The galvanic displacement reaction was characterized by analyzing the open circuit potential and the corrosion resistance.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.149-153
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• 2016

Thermal oxidation has significant potential for use in synthesizing metal-oxide nanostructures from metallic materials. However, this method has limited applicability to the synthesis of multi-morphology NiO from Ni foil. Techniques consisting of mechanical and chemical approaches were used to pre-treat the Ni foil (prior to oxidation) to promote the formation of nanowires and nanoplates on the NiO layer. These morphologies were realized on the Ni foils scratched by sand paper and a knife, respectively, and subsequently heat-treated at $500^{\circ}C$ for 24 h. Small nanowires (diameter: <10 nm) formed on the Ni foil treated by absolute $HNO_3$ and then oxidized at $500^{\circ}C$ for 24 h. The formation of various morphologies (on the pre-treated Ni foil), which differ from that formed in the case of pristine Ni foil after oxidation, may be attributed to the surface melting phenomenon that occurs during the nucleation process.

• Journal of the Korean Magnetics Society
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• v.16 no.4
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• pp.193-196
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• 2006

The magnetic properties of Ni nanowires consisting of one to four atoms are investigated by mean of ab initio spin-polarized density functional calculations. Stability of zigzag-square $Ni_4$ nanowire is larger than $Ni_4$ nanowires with square. The magnetic moment of linear $Ni_1$ is $1.34{\mu_B}/atom$, which is the largest magnitude among moments of five Ni nanowires. The magnetic moment of Ninanowires show to be decreased by increasing the number of atoms in unit cell. The smallest moment is $0.91 {\mu_B}/atom$ for square $Ni_4$ nanowire. The spin polarization of zigzag-square $Ni_4$ nanowire is 32% higher than that of fcc bulk Ni.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.259-259
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• 2015

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was deposited before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. This Ni diffusion through an ITO NW was investigated by transmission electron microscope to observe the Ni-tip sitting on a single crystalline ITO NW. Meanwhile, a single crystalline ITO structure was found at bottom and body part of a single ITO NW without remaining of Ni atoms. This indicates the Ni atoms diffuse through the oxygen vacancies of ITO structure. Rapid thermal process (RTP) applied to generate an initial stage of a formation of Ni nanoparticles with variation in time periods to demonstrate the existence of an optimum condition to initiate ITO NW growth. Modulation in ITO sputtering condition was applied to verify the ITO NW growth or the ITO film growth. The Ni-assisted grown ITO layer has an improved electrical conductivity while maintaining a similar transmittance value to that of a single ITO layer. Electrically conductive and optically transparent nanowire-coated surface morphology would provide a great opportunity for various photoelectric devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.597-597
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• 2012

A simple solution-based method is developed to deposit crystalline ultrathin (2 nm) nickel hydroxide on vertically grown ZnO nanowires to achieve high specific capacitance and long-term life for flexible and wearable energy storage devices. Ultrathin crystalline $Ni(OH)_2$ enables fast and reversible redox reaction to improve the specific capacitance by utilizing maximum number of active sites for the redox reaction while vertically grown ZnO nanowires on wearable textile fiber effectively transport electrolytes and shorten the ion diffusion path. Under the highly flexible state $Ni(OH)_2$ coated ZnO nanowires electrode shows a high specific capacitance of 2150 F/g (based on pristine $Ni(OH)_2$ in 1 M LiOH aqueous solution with negligible decrease in specific capacitance after 1000 cycles. The synthesized energy-storage electrodes are easy-to-assemble which can provide unprecedented design ingenuity for a variety of wearable and flexible electronic devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.6
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• pp.256-259
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• 2006

The amorphous $SiO_x$ nanowires were synthesized by the vapor phase epitaxy (VPE) method. $SiO_x$ nanowires were formed on silicon wafer of temperatures ranged from $800{\sim}1100^{\circ}C$ and nickel thin film was used as a catalyst for the growth of nanowires. A vapor-liquid-solid (VLS) mechanism is responsible for the catalyst-assisted amorphous $SiO_x$ nanowires synthesis in this experiment. The SEM images showed cotton-like nanostructure of free standing $SiO_x$ nanowires with the length of more than about $10{\mu}m$. The $SiO_x$ nanowires were confirmed amorphous structure by TEM analysis and EDX spectrum reveals that the nanowires consist of Si and O.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.11a
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• pp.27.1-27.1
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.30.2-30.2
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.390.2-390.2
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• 2016

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.