• 한국표면공학회지
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• 제37권4호
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• pp.208-214
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• 2004

The influence of the boron content on the various properties of Ni-B alloy films produced by electrodeposition was investigated. The considerable reduction in grain size was observed with increasing boron content. The internal stress was tensile and increased linearly with increasing boron content. Hardness increased up to $750H_{v}$ at 2 at% boron and then kept the value to 11 at% boron for as-plated Ni-B coatings. The hardness of Ni-B films increased up to $1,250H_{v}$ due to the intermetallic$ Ni_3$B precipitation by the heat treatment, and maximum hardness of each coating increases with boron content. Wear resistance decreased with increasing the boron content because of high friction coefficient and brittle fracture of film which has higher content of boron.

• Journal of Magnetics
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• 제22권2호
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• pp.175-180
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• 2017

CoNi alloy films prepared from electrolytes with various concentrations of cobalt ions were studied in the paper. Influences of different cobalt ions concentrations on electrochemistry processes, components, microstructures, surface morphologies and magnetic properties of CoNi films were investigated. It was found that CoNi film plating was a kind of anomalous codeposition process. The percentage of cobalt content in CoNi films was higher than that of in the electrolyte. Moreover, with the rise of cobalt ions concentrations, the percentage of cobalt content in the samples increased gradually. CoNi films possessed crystal structures with four stronger diffraction peaks. However, CoNi films prepared from bath with higher cobalt ions possessed hcp structures which contributed to dendrite structures resulting in the increase of coercivity.

• Journal of Magnetics
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• 제10권4호
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• pp.133-136
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• 2005

The NiMn/NiFe bilayer structure which was short time annealed in order to induce unidirectional anisotropy were studied as a function of annealing temperature. The maximum exchange bias field of NiMn/NiFe bilayer was presented at $250^{\circ}C$ after short time annealing process with no external field. The appearance of exchange bias was due to phase transformation of NiMn layer. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of unidirectional anisotropy and uniaxial anisotropy. The resonance field and the line width from FMR measurement were also analysed with annealing temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.397-397
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• 2013

The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

• 한국자기학회지
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• 제24권2호
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• pp.60-65
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• 2014

전기 도금법으로 제작한 Ni 박막(240 nm)의 자기장 각도에 따른 강자성 공명 신호를 측정하여 공명 자기장($H_{res}$) 및 선폭(${\Delta}H_{PP}$)을 도출하였다. 자기장 각도에 따른 $H_{res}$는 이론적인 분석 결과와 일치하였으며 이들 결과로부터 제조된 Ni 박막의 g-factor는 2.18임을 확인하였다. 자기장 각도에 따른 ${\Delta}H_{PP}$는 박막의 수평 방향에서 매우 큰 값을 나타냈으며, 이러한 특성은 Gilbert 감쇠에 기인하는 균일한 선폭 특성과 약 1 nm의 표면에서 나타나는 자구들의 각도 변화 및 자화량 변화에 기인하는 비균일한 선폭 특성으로는 설명되지 않았다. 따라서 본 연구에서는 박막의 두께가 10 GHz에서 임계 두께(약 50 nm) 이상으로 증가하면 나타나는 two magnon scattering 이론을 적용하여 비균일한 선폭 특성을 분석하였다. 이러한 분석 결과로부터 전기 도금법으로 제작한 240 nm 두께를 갖는 Ni 박막에서 각도에 따른 비균일한 선폭 변화의 주요한 원인은 재료 내부 결함들에 의한 스핀파 산란이었음을 알 수 있었다.

• 대한화학회지
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• 제26권6호
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• pp.369-377
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• 1982

염기성 용액에서 니켈표면에 생성되는 양극 산화막의 성질과 그 생성 메카니즘을 알아보기 위하여 반사율 측정과 타원편광 반사법 측정을 동시에 하는 실험방법을 이용하였다. 과도적 변화의 측정을 위하여 파라데이 효과에 의한 평면편광의 변조를 이용하여 타원편광 반사계를 자동화하였다. 높은 순도의 다결정성 니켈을 연마한 후 환원전위에서 부동화전위로 전위를 갑작스럽게 변화시켜 전기화학적으로 부동화를 유도하면서 생성되는 표면막의 반사율(r)과 타원편광 반사법 파라미터들(${\Delta},{\Psi}$)의 변화를 자동화타원편광 반사계를 사용하여 기록하였다. 생성된 표면막의 광학상수들 n,k와 두께 ${\tau}$를 결정하기 위해서 컴퓨터로 세가지 광학 측정치를 포함하는 세개의 연립방정식을 풀었다. 이러한 계산값들의 크기와 그 값들이 pH와 시간에 따라 변하는 모습을 살펴 본 결과, 니켈의 부동화는 $15{\AA}$ 미만의 얇은 표면막으로도 효과적으로 이루어질 수 있으며, 이 부동화막은 작은 흡광계수를 갖고 있는 것으로 보인다. 또한, pH가 클수록 부동화상태에 빨리 도달하며 생성된 부동화막의 구조도 더욱 치밀해지는 것으로 보인다. 실험 결과들은 부동화막의 조성은 부동화가 이루어지는 초기에는 $Ni(OH)_2$에 가까우나 시간이 경과함에 따라 부분적으로 탈수되어 NiO로 변한다는 추정과 부합한다.

• 센서학회지
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• 제30권5호
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• pp.309-313
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• 2021

Organic semiconductors have received tremendous attention for their research because of their tunable electrical and optical properties that can be achieved by changing their molecular structure. However, organic materials are inherently unstable in the presence of oxygen and moisture. Therefore, it is necessary to develop moisture and air stable semiconducting materials that can replace conventional organic semiconductors. In this study, we developed a NiO_x thin film through a solution process. The electrical characteristics of the NiO_x thin film, depending on the thermal annealing temperature and UV-ozone treatment, were determined by applying them to the hole injection layer of an organic light-emitting diode. A high annealing temperature of 500 ℃ and UV-ozone treatment enhanced the conductivity of the NiO_x thin films. The optimized NiO_x exhibited beneficial hole injection properties comparable those of 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN), a conventional organic hole injection layer. As a result, both devices exhibited similar power efficiencies and the comparable electroluminescent spectra. We believe that NiO_x could be a potential solution which can provide robustness to conventional organic semiconductors.

• 센서학회지
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• 제15권5호
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• pp.352-356
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• 2006

In this paper, we developed enzyme electrode of a new form to improve performance of disposable glucose sensor. We could fabricate electrode of Cu/Ni/Au structure which has very low electrical resistance (0.1 $\Omega$) by sticking copper film to plastic film with laminating method and electro-plated nickle and gold on it. The enzyme electrode was completed by immobilizing enzyme on the fabricated electrode. The fabricated glucose sensor has very quick sensing time as 3 seconds, and excellent reproducibility, fabrication yield as well.

• 한국세라믹학회지
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• 제41권3호
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• pp.247-252
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• 2004

노튜브의 길이는 급격히 증가하였지만 촉매금속의 적층방법에 따른 탄소나노튜브의 성장 형태는 큰 차이가 없었다. 특히, ICBD 방법에 의해 Ni 촉매금속을 증착한 경우 다른 방법에 비하여 직선적인 탄소나노튜브가 관찰되었다. ^x Carbon nanotubes were grown on SiO$_2$/Si substrates by applying $C_2$H$_2$ gas through chemical vapor deposition process. It was found that carbon nanotubes were grown successfully on the substrates with catalytic films under 20 $\AA$ total thickness. The increase in reaction temperature from 50$0^{\circ}C$ to 80$0^{\circ}C$ resulted in longer carbon nanotube, but there was no clear tendencies with different types of catalytic layers. It was evident that carbon nanotubes became more straight on the substrate with Ni catalytic film produced by ICBD method.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1640-1642
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• 2000

We were fabricated of NiCr thin film resitors(TFR) on $Al_{2}O_3$ substrates by dc magnetic sputtering, system. The characteristics of electrical resistance by substrates & annealing condition on the resistors were studied by X-ray Diff. and SEM, ESCA.