• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.25.2-25.2
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• 2011

Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).

• Journal of Magnetics
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• v.11 no.2
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• pp.77-82
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• 2006

The structure and magnetic properties of Fe-Ni films, deposited by DC magnetron sputtering on Si(111) wafer, have been studied. The spin wave stiffness constant is determined by Brillouin light scattering (BLS) and compared with the value obtained from magnetization measurements. The range of exchange interaction was determined as 0.4 atomic distances in the film deposited in a bias magnetic field, which is 1/2 that in the film grown in no bias magnetic field. The results show that the dimensions of exchange coupling increased by the sputtering in the magnetic field.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.318-318
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• 2011

Etching of an ultrathin aluminum oxide film on NiAl(110) substrate by methanol is studied by home-built scanning tunneling microscopy at room-temperature. We deposited liquid methanol on thin alumina film by using a high speed solenoid valve suitable for deposition of thermally unstable molecules. It is found that only the reflection domain boundary between two domains was preferentially etched by methanol. Since the reflection domain boundary has many oxygen vacancies and irregular structures, judging from the fact, we assume that oxygen vacancies cause the chemically reactive phenomena of methanol in reflection domain boundary on an alumina film. The reactivity of the reflection domain boundary is attributed to the oxygen vacancies due to irregular structures. Similar reactivity is found on the oxygen deficient alumina produced on top of the intact alumina.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.9-12
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• 1997

The fabrication and performance of a thin film pressure sensor are described. Cu-Ni thin film strain gauges have been fabricated by RF magnetron sputtering. For all the gauges, the relative chance in resistance ΔR/R with pressure is of the order 10$^{-3}$ for the maximum pressure. The output characteristic is found to be linear over the entire Pressure range (0-30kgf/cm$^2$) and the output sensitivity is 1.6 mV/V. The maximum nonlinearity observed in output characteristics is 0.34%FS for 5V excitation and the hysteresis is less than 0.1%FS.

• Journal of the Korean Magnetics Society
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• v.20 no.2
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• pp.35-40
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• 2010

The GMR-SV (giant magnetoresistance-spin valve) device depending on the micro patterned features according to two easy directions of longitudinal and transversal axes has been studied. The GMR-SV multilayer structure was Ta(5 nm)/NiFe(8 nm)/Cu(2.3 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm). The applied anisotropy direction of the GMR-SV thin film was performed under the magnitude of 300 Oe using by permanent magnet during the deposition. The size of micro patterned device was a $1\;{\times}\;18\;{\mu}m^2$ after the photo lithography process. In the aspects of the shape magnetic anisotropy effect, there are two conditions of fabrication for GMR-SV device. Firstly, the direction of sensing current was perpendicular to the magnetic easy axis of the pinned NiFe/IrMn bilayer with the transversal direction of device. Secondly, the direction of shape magnetic anisotropy was same to the magnetic easy axis of the free NiFe layer with the longitudinal direction of device.

• Corrosion Science and Technology
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• v.13 no.3
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• pp.107-111
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• 2014

Electroless plated Ni-Co-P films have been used to suppress the electromagnetic waves from magnetic recording media, and the suppression is known to be achieved with films made with optimized plating composition and plating condition. Effects of complexing agents on the deposition rate and bath stability of Ni-Co-P film were studied using sodium citrate, sodium tartrate and multi-complex agents containing both of them. Deposition of electroless Ni-Co-P platings was dependent upon the complexing agents. Deposition rate was twice when using sodium tartrate compared to that using sodium citrate. And it was slightly slower with multi-complex agents than with sodium tartrate, bath stability being declined in the former. Deposition rate increased with increasing pH until pH 11. Excellent bath stability and good deposition rate were obtained using multi-complex agent as sodium citrate 0.10 mol/L and sodium tartrate 0.15 mol/L in the electroless Ni-Co-P plating films.

• Journal of Magnetics
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• v.9 no.3
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• pp.79-82
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• 2004

The structure and magnetic properties of Fe-Ni-N/Cu multilayered films, prepared by the DC magnetron sputter, as a function of different thicknesses of Fe-Ni-N ($t_{FeNiN}$) and Cu ($t_Cu$) layers have been studied by the methods of x-ray diffraction and measurement of magnetic moment. It has been found that the enhancement of (200) orientation in Fe-Ni-N layers is observed at the ratio of layer thickness with about $t_{FeNiN}/t_{Cu}$ $\underline{\simeq}$ 3.75. The reduction of magnetization due to the formation of interdiffusion near the interface is explained by means of the dead layer model. The temperature dependence of magnetization exhibits the feature of Blochs $T^{\frac{2}{3}}$ law. The layer thickness dependence of Curie temperature has been discussed by critical temperature theory of Heisenberg model.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.157-157
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• 2010

Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

• Journal of the Korean institute of surface engineering
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• v.51 no.1
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• pp.62-70
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• 2018

Sulfamate plating solution containing a small amount of chloride bath was fabricated to study the properties of the electrodeposited Ni thin films. Effects of the changes of current density and additive concentration on current efficiency, residual stress, surface morphology and microstructure of Ni thin films electrodeposited from Ni sulfamate-chloride baths were investigated. The current efficiency was measured to be more than about 95%, independent of the changes of current density and saccharin concentration in the baths. Residual stress of Ni thin film was appeared to be the compressive stress modes in the range of $5{\sim}30mA/cm^2$ current density. Maximum compressive stress was observed at the current density of $10mA/cm^2$. Compressive stress values of Ni thin/thick films were increased to be about -85~-100 MPa with increasing saccharin concentration from 0 to 0.0195 M(4 g/L). Surface morphology was changed from smooth to nodule surface appearance with increasing the current density. Smooth surface morphology of Ni thin films electrodeposited from the baths containing saccharin was observed, independent of the saccharin concentration. Ni thin/thick films consist of FCC(111), FCC(200), FCC(220), FCC(311) and FCC(222) peaks. It was revealed that the FCC(200) peak of Ni thin films is the preferred orientation in the range of $5{\sim}30mA/cm^2$ current density. The intensity of FCC(200) peak was gradually decreased and the intensity of FCC(111) peak was increased with increasing saccharin concentration in the baths.