• 제목/요약/키워드: Ni Electrode

검색결과 550건 처리시간 0.034초

로보 디스펜싱을 이용하여 직접묘화방식으로 제조된 고출력 소형 고체산화물 연료전지 (Direct-Write Fabrication of Solid Oxide Fuel Cell by Robo-Dispensing)

  • 김용범;문주호;김주선;이종호;이해원
    • 한국세라믹학회지
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    • 제42권6호
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    • pp.425-431
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    • 2005
  • Line Shaped Solid Oxide Fuel Cell (SOFC) with multilayered structure has been fabricated via direct-writing process. The cell is electrolyte of Ni-YSZ cermet anode, YSZ electrolyte and LSM cathode. They were processed into pastes for the direct writing process. Syringe filled with each electrode and electrolyte paste was loaded into the computer-controlled robe-dispensing machine and the paste was dispensed through cylindrical nozzle of 0.21 mm in diameter under the air pressure of 0.1 tow onto a moving plate with 1.22 mm/s. First of all, the anode paste was dispensed on the PSZ porous substrate, and then the electrolyte paste was dispensed. The anode/electrolyte and the PSZ substrate were co-fired at $1350^{\circ}C$ in air atmosphere for 3 h. The cathode layer was similarly dispensed and sintered at $1200^{\circ}C$ for 1 h. All the electrode/electrolyte lines were visually aligned during the direct writing process. The effective reaction area of fabricated SOFC was $0.03 cm^2$, and the thickness of anode, electrolyte and cathode was 20 $\mu$m, 15 $\mu$m, and 10 $\mu$m, respectively. The single line-shaped SOFC fabricated by direct-writing process exhibited OCV of 0.95 V and maximum power density of $0.35W/cm^2$ at $810^{\circ}C$.

탄소 전극 형상 변화에 따른 전기화학 커패시터 특성 향상 (Improvement of Electrochemical Characteristics by Changing Morphologies of Carbon Electrode)

  • 민형섭;김상식;정덕수;최원국;오영제;이전국
    • 한국재료학회지
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    • 제19권10호
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    • pp.544-549
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    • 2009
  • Activated carbon (AC) with very large surface area has high capacitance per weight. However, such activation methods tend to suffer from low yields, below 50%, and are low in electrode density and capacitance per volume. Carbon NanoFibers (CNFs) had high surface area polarizability, high electrical conductivity and chemical stability, as well as extremely high mechanical strength and modulus, which make them an important material for electrochemical capacitors. The electrochemical properties of immobilized CNF electrodes were studied for use as in electrical double layer capacitor (EDLC) applications. Immobilized CNFs on Ni foam grown by thermal chemical vapor deposition (CVD) were successfully fabricated. CNFs had a uniform diameter range from 50 to 60 nm. Surface area was 56 m$^2$/g. CNF electrodes were compared with AC and multi wall carbon nanotube (MWNT) electrodes. The electrochemical performance of the various electrodes was examined with aqueous electrolyte of 2M KOH. Equivalent series resistance (ESR) of the CNF electrodes was lower than that of AC and MWNT electrodes. The specific capacitance of 47.5 F/g of the CNF electrodes was achieved with discharge current density of 1 mA/cm$^2$.

새로운 수용성 2차 전지용 전극의 개발과 응용 (Development and Application of Electrode for a New Secondary Aqueous Cell)

  • 황금소
    • 수산해양기술연구
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    • 제41권2호
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    • pp.165-170
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    • 2005
  • Al-Zn alloy/$MnO_2$, seawater cell was considered as a primary aqueous cell with an average voltage range from 1.0 to 1.1V, and the electrolyte of seawater was uptaken into the cell. Eventually, the capacity of its usage will be used for long-term. However, the more use of this cell, the higher corrosion phenomenon of the electrode occurred. Due to its corrosion phenomenon, one main default has been observed with gradual decrease during a discharge process. In this research, a common-used active material for anode was $LiNiO_2$. An active material for cathode, $Zn_{X}FeS_2$ was synthesized in high temperature by uptaken a small amount of 1.3 wt% of ZnS into $FeS_2$, one of the transition-metal dichalcogenides in high temperature. Consequently, based on their usages shown above, this secondary aqueous lithium cell could be more developed. This cell was shown as remarkable charge/discharge performance during the charge/discharge processes. This cathode with active material was given a considerable efficiency of inserting $Li^+$ ions. Moreever, in accordance with the characteristic of the crystal structure for $Zn_{x}FeS_2$, a small amount of ZnS was added which made it possible to reduce prominently velocity of corrosion during the charge/discharge cycle. By applying those merits, Al-Zn alloy/$MnO_2$ seawater cell will be used as a fundamental data in order to transform into a secondary aqueous cell.

미세 연소기 개발 (II) - 미세동력 장치용 미세 전극의 제작과 성능평가 - (Design and Development of Micro Combustor (II) - Design and Test of Micro Electric Spark discharge Device for Power MEMS -)

  • 권세진;이대훈;박대은;윤준보;한철희
    • 대한기계학회논문집B
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    • 제26권4호
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    • pp.524-530
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    • 2002
  • Micro electric spark discharge device was fabricated on a FOTURAN glass wafer using MEMS processing technique and its performance of electron discharge and subsequent formation of ignition kernel were tested. Micro electric spark device is an essential subsystem of a power MEMS that has been under development in this laboratories. In a combustion chamber of sub millimeter scale depth, spark electrodes are formed by electroplating Ni on a base plate of FOTURAN glass wafer. Optimization of spark voltage and spark gap is crucial for stable ignition and endurance of the electrodes. Namely, wider spark gaps insures stable ignition but requires higher ignition voltage to overcome the spark barrier. Also, electron discharge across larger voltage tends to erode the electrodes limiting the endurance of the overall system. In the present study, the discharge characteristics of the proptotype ignition device was measured in terms of electric quantities such as voltage and currant with spark gap and end shape as parameters. Discharge voltage shows a little decrease in width of less than 50㎛ and increases with electrode gap size. Reliability test shows no severe damage over 10$\^$6/ times of discharge test resulting in satisfactory performance for application to proposed power MEMS devices.

Rosen type 변압기 응용을 위한 PNN-PMN-PZT 세라믹스의 전기적 특성 (Electrical Properties of PNN-PMN-PZT ceramics for Rosen Type Transformer Applications)

  • 주현규;김인성;송재성;김민수;정순종;이대수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.1244-1245
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    • 2008
  • Recently, piezoelectric transformer is applied to wide fields. Multi layer piezoelectric transformer has the advantage of high step up ratio, electromechanical coupling coefficient(Kp) and mechanical quality factor(Qm), but is indicated of peeling-phenomenon of electrode, rising sintering temperature made price of costly electrode. So in this study, it discuss on method for fabrication of rosen type piezoelectric transformers. For the fabrication as rosen type piezoelectric transformers, synthesized the powder using 0.01Pb$(ni_{1/3}Nb_{2/3})O_3$ - 0.08Pb$(Mn_{1/3}Nb_{2/3})O_3$ - 0.91Pb$(Zr_{0506}Ti_{0496})O_3$ (abbreviated as PNN-PMN-PZT) ceramics. The density, microstructure, dielectric and piezoelectric properties as a function of sintering temperature were investigated. The results indicated that the optimized properties of ceramics were obtained at sintering temperature of 1200$^{\circ}C$, showed the value of $d_{33}$=273pC/N, $K_p$=0.60 $Q_m$=1585, ${\varepsilon}_r$=1454, density=7.917$g/cm^3$ and $tan{\delta}$=0.0064.

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실리콘 기판위에서의 Cr-Doped SrZrO3 박막의 저항변화 특성 (Resistive Switching Properties of Cr-Doped SrZrO3 Thin Film on Si Substrate)

  • 양민규;고태국;박재완;이전국
    • 한국재료학회지
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    • 제20권5호
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    • pp.241-245
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    • 2010
  • One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

정전위법에 의한 n-PFOSF 합성 (Electrosynthesis of n-PFOSF with Potential Operation)

  • 이종일;태범석
    • 공업화학
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    • 제7권3호
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    • pp.473-480
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    • 1996
  • 불소계 계면활성제 및 정밀화학제품의 precursor로 널리 쓰이는 n-perfluorooctanesulfonyl fluoride(n-PFOSF)를 전해불소화 반응으로 제조하는 과정에서 전극 및 반응물의 분극특성의 조사와 불소발생 전위를 측정하였다. 그리고 회분식 전해반응기를 사용하여 정전위법으로 전해반응을 실시하고 반응 종료후 전극과 생성물을 GC, GC/MS, IR 등으로 분석하여 반응과정에 대한 기초자료를 얻으려 하였다. 불소기체의 생성전위는 침적전위 붕괴곡선으로 부터 약 2.8V(vs. $Cu/CuF_2$)로 보이며 니켈불화물이 덮힌 상태의 전극에서 불소화반응이 진행된다. 회분식 반응기에서 정전위법에 의한 전해불소화 반응은 초기의 전기화학 반응과 후반의 화학반응의 두 단계로 구분된다. 생성물은 전극에 부여된 전위가 낮을수록 적게 생성되며 7V(vs. $Cu/CuF_2$) 이상 반응물의 무게비로 약 100% 정도를 유지하며 일정해지며 생성물의 분포도 7V(vs. $Cu/CuF_2$) 이상에서 부터 PFOSF의 생성율이 일정해진다.

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Synthesis and Binding Properties of 1,3,5-Tris(2-arylthiomethyl)mesitylene: A Selective Ag (I) Ionophore

  • Kim, Hong-Seok;Bae, Seon-Yun;Kim, Ki-Soo;Choi, Jun-Hyeak;Choi, Heung-Jin;Shim, Jun-Ho;Cha, Geun-Sig;Nam, Hak-Hyun
    • Bulletin of the Korean Chemical Society
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    • 제29권2호
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    • pp.417-421
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    • 2008
  • The efficient synthesis of four mesitylene-based receptors 1-4 and their potentiometric response characteristics to alkali metal, alkaline earth metal, and transition metal ions, under various pH conditions are outlined. Receptor 1-based electrode exhibited more sensitive response to Ag+ ion (49 mV/decade of range from 10-6 to 10-2 M) than the 2-based electrode (47 mV/decade of range from 3 ´ 10-5 to 10-2 M), while the 3- and 4-based ones revealed sub-Nernstian below 40 mV/pAg+. All electrodes showed substantial responses to Ag+ ion under acidic condition, but there was almost nil-response to other transition metal ions (Fe2+, Co2+, Zn2+, Ni2+, Pb2+, Cd2+, Cu2+ and Hg2+). The association constant of receptor 1 toward Ag+ ion, measured by 1H NMR titration, showed the largest value (200 M-1) among the tested receptors. The results were interpreted with semi empirically-modeled structures.

전기도금법에 의해 전착된 BixTey 박막의 전기 및 열전 특성 (Thermoelectric/electrical characterization of electrodeposited BixTey thin films)

  • 유인준;이규환;김양도;임재홍
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2012년도 춘계학술발표회 논문집
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    • pp.308-308
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    • 2012
  • Electrodeposition of thermoelectric materials, including binary and ternary compounds, have been attracting attentions, because its many advantages including cost-effectiveness, rapid deposition rate, and ease of control their microstructure and crystallinity by adjusting electrodeposition parameters. In this work, $Bi_xTe_y$ films were potentiostatically electrodeposited using Au/Ni(80/20 nm)/Si substrate as the working electrode in solutions consisting of 10mM $TeO_2$ and 1M $HNO_3$ where $Bi(NO_3)_3$ was varied from 2.5 to 10 mM. Prior to electrodeposition potentiostatically, linear sweep voltammograms (LSV) were acquired with a standard three-electrode cell. The $Bi_xTe_y$ films deposited using the electrolyte containing low Bi ions shows p-type conductivity, which might be attributed by the large incorporation of Te phases. Near stoichiometric $Bi_2Te_3$ thin films were obtained from electrolytes containing 5mM $Bi(NO_3)_3$. This film shows the maximum Seebeck coefficient of $-100.3{\pm}12.7{\mu}V/K$. As the increase of Bi ions in electrolytes decreases the Seebeck coefficient and resistivity. The maximum power factor of $336.2{\mu}W/m{\cdot}K^2$ was obtained from the film deposited using the solution of 7.5mM $Bi(NO_3)_3$.

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Characteristics of the Ni/Cu Plating Electrode for Crystalline Silicon Solar Cell

  • 이영민;김대성;박정은;박준석;이민지;임동건
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.414.1-414.1
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    • 2016
  • 스크린 프린팅법을 이용한 태양전지의 전극은 주로 고가의 은을 사용하기에 태양전지의 저가화에 한계를 가지고 있다. 고효율 결정질 실리콘 태양전지의 원가절감의 문제 해결방안으로 박형 웨이퍼 연구개발이 많은 관심을 받고 있다. 본 연구에서는 은 전극을 대체 할 수 있는 니켈/구리 전극을 사용하였고, 박형 웨이퍼에서도 전극 공정이 가능한 도금법을 사용하여 전극을 형성 하였다. 니켈 전극형성은 광유도 도금법(Light-Induced Plating), 구리 전극형성은 광유도전해도금법(Light-Induced Electro Plating)을 이용하여 실험을 진행 하였다. 니켈 광유도 도금 공정시 공정시간 3 ~ 9분까지 가변하였다. 니켈실리사이드 형성 위해 열처리 공정을 $300{\sim}450^{\circ}C$까지 가변하였고 유지시간 30초 ~ 3분까지 가변하여 실험을 진행하였다. 니켈 도금 수용액의 pH 6 ~ 7.5까지 가변하여 실험하였다. 구리 광유도 전해도금 공정 전류밀도를 $1.6mA/cm^2{\sim}6.4mA/cm^2$까지 가변하여 실험을 진행 후, 전류밀도 $3.2mA/cm^2$로 시간 5 ~ 7분까지 가변하여 실험 하였다. 니켈 도금 공정 시간 5분, 니켈실리사이드 형성 열처리 온도 $350^{\circ}C$, 유지시간 1분에서 DIV(Dark I-V) 분석결과 가장 적은 누설전류를 확인하였다. 니켈 도금액 pH 6.5에서 니켈입자 및 구리입자의 균일성이 좋은 최적의 조건임을 확인하였다. 구리 도금 공정 전류밀도 $3.2mA/cm^2$, 시간 5분에서 TLM(Transmission Line Method) 측정결과 접촉 저항 $0.39{\Omega}$과 접촉 비저항 $12.3{\mu}{\Omega}{\cdot}cm^2$의 저항을 확인하였다. 도금법을 이용하여 전극을 형성함으로써 접촉저항 및 접촉 비저항이 낮고 전극 품질이 향상됨으로서 셀의 전류밀도 $42.49mA/cm^2$를 얻을 수 있었다.

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