• 자원리싸이클링
• /
• 제10권2호
• /
• pp.27-33
• /
• 2001

무전해 Ni-Cu-P폐 도금액의 재사용에 대해 소정의 조건에서 조사하였다. 아연화처리한 후 니켈 촉매의 처리는 니켈 촉매처리를 하지 않았을 때 보다 도금시간이 연장되었다 Batch type에서 새로 제조한 도금액에 폐 도금액을 50% 첨가하여도 무전해 Ni-Cu-P 폐 도금액의 재사용이 가능하였다. 새로 제조한 도금액에 소모된 도금액의 성분을 연속적으로 보충하여 도금하면(Continuous type), 보충하지 않았을 경우(B기ch type)보다 도금시간이 10배 연장되었다. 새로 제조한 도금액에 폐 도금액 50%를 첨가하여 소모된 도금액의 성분을 연속적으로 보충할 경우(Continuous type)의 도금시간은 보충하지 않았을 경우(Batch type)의 도금시간 보다 3.7배 연장되었다. 도금층의 불량과 급격한 도금속도의 감소는 도금층의 Ni과 Cu의 성분 변화에 큰 영향을 미쳤다.

• 자원리싸이클링
• /
• 제12권1호
• /
• pp.18-24
• /
• 2003

무전해 Ni-Cu-B 폐 도금액의 재사용에 대해 소정의 조건에서 조사하였다. 아연화처리한 후 니켈 촉매의 처리는 니켈 촉매처리를 하지 않았을 때 보다 도금시간이 연장되었다. Batch type에서 새로 제조한 도금액에 폐 도금액을 40% 첨가하여도 무전해 Ni-Cu-B 폐 도금액의 재사용이 가능하였다. 새로 제조한 도금액에 소모된 도금액의 성분을 연속적으로 보충하여 도금하면(continuous type), 보충하지 않았을 경우(batch type) 보다 도금시간이 6배 연장되었다. 새로 제조한 도금액에 폐 도금액 40%를 첨가하여 소모된 도금 액의 성분을 연속적으로 보충할 경우(continuous type)의 도금시간은 보충하지 않았을 경우(continuous type)의 도금시간 보다 2배 연장되었다. 도금층의 불량과 급격한 도금속도의 감소는 도금층의 Ni과 Cu의 성분 변화에 큰 영향을 미쳤다.

• 동력기계공학회지
• /
• 제10권3호
• /
• pp.58-66
• /
• 2006

The effect of bath composition, plating condition and plating rate on the magnetic properties of electroless Ni-Cu-P deposits were investigated. With increasing $CuSO_4$ concentration in the bath, plating rate increased, while the Br value of deposits decreased Sharply. Plating rate increased up to 34% with the addition of 200ppm of NaF and 0.8ppm of Thiourea to the bath. Plating reaction had been ceased by the increase of pH above 11.3, bath temperature higher than $90^{\circ}C$ and under $70^{\circ}C$. The Br value of deposit was uniform with various concentration of complexing agent (Sodium citrate, Ethylenediamine) in the bath. The Br value of deposit was almost equal to that found by the addition of stabilizer(Thiourea) and accelerator(NaF). The Br value of deposit was uniform in plating time(120 min) and heat treatment temperature(below $200^{\circ}C$), and were confirmed to have adequate bath stability for practical use.

• 한국전기전자재료학회논문지
• /
• 제24권4호
• /
• pp.328-332
• /
• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surface. One of the front metal contacts is Ni/Cu plating that it is available to simply and inexpensive production to apply mass production. Ni is shown to be a suitable barrier to Cu diffusion into the silicon. The process of Ni electroless plating on front silicon surface is performed using a chemical bath. Additives and buffer agents such as ammonium chloride is added to maintain the stability and pH control of the bath. Ni deposition rate is found to vary with temperature, time, utilization of bath. The experimental result shown that Ni layer by SEM (scanning electron microscopy) and EDX analysis. Finally, plated Ni/Cu contact solar cell result in an efficiency of 17.69% on $2{\times}2\;cm^2$, Cz wafer.

• 전기화학회지
• /
• 제3권2호
• /
• pp.121-126
• /
• 2000

[ $AB_5$ ] 수소저장합금인 $LaNi_5$, 합금분말에 Ni 및 Cu 무전해 도금의 영향을 전기 화학적 실험을 통하여 고찰하였다. 전기 화학적 실험은 정전류 충$\cdot$방전 실험, 순환전류전위 실험, 교류 임피던스 실험 등을 실시하여 도금하지 않은 $LaNi_5$ 전극과 Ni 및 Cu 무전해 도금한 전극간의 특성을 비교 연구하였다. 현상학적인 분석으로는 SEM을 이용하여 분말상의 미세조직을 관찰하였으며 X-선 회절시험을 실시하였다 무전해 도금을 실시하여 Ni 및 Cu박막이 피복된 수소저장 합금은 활성화 특성파 싸이클 수명 등의 특성이 개선되었으며 도금하지 않은 전극에 비하여 반응속도가 증가하였다. 또한 충$\cdot$방전이 반복됨에 따라 전극과 전해질 계면에서의 전하이동저항이 현저하게 감소하였다. 따라서 본 연구에서 실시한 $LaNi_5$, 활물질에 Ni및 Cu 무전해 도금을 실시하면 초기 활성화반응을 촉진시키며 $LaNi_5$활물질이 전해질과의 직접 접촉을 피하게 되어 전극의 수명을 증가시키는 것을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.708-711
• /
• 1999

The Cu/Ni/Au lamellar structure is extensively used as an under bump metallization on silicon file, and on printed circuit board(PCB) pads. Ni is plated Cu by either electroless Ni plating, or electrolytic Ni plating. Unlike the electrolytic Ni plating, the electroless Ni plating does not deposit pure Ni, but a mixture of Ni and phosphorous, because hypophosphite Is used in the chemical reaction for reducing Ni ions. The fracture crack extended at the interface between solder balls of plastic ball grid (PBGA) package and conducting pads of PCB. The fracture is duets to segregation at the interface between Ni$_3$Sn$_4$intermetallic and Ni-P layer. The XPS diffraction results of Cu/Ni/Au results of CU/Ni/AU finishs showed that the Ni was amorphous with supersaturated P. The XPS and EDXA results of the fracture surface indicated that both of the fracture occurred on the transition lesion where Sn, P and Ni concentrations changed.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2007년도 춘계학술대회
• /
• pp.250-253
• /
• 2007

An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by anneal ing at $380{\sim}400^{\circ}C$ for $15{\sim}30$ min at $N_{2}$ gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at $380{\sim}400^{\circ}C$. The Ni plating solution is composed of a mixture of $NiCl_{2}$ as a main nickel source. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency solar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation. In this paper, we investigated low-cost Ni/Cu contact formation by electroless and electroplating for crystalline silicon solar cells.

• 한국전기전자재료학회논문지
• /
• 제23권7호
• /
• pp.575-579
• /
• 2010

The technologies of Ni/Cu plating contact is attributed to the reduced series resistance caused by a better contact conductivity of Ni with Si and the subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading was combined with the lower resistance of a metal silicide contact and an improved conductivity of the plated deposit. This improves the FF (fill factor) as the series resistance is reduced. This is very much requried in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A Selective emitter structure with highly dopeds regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing In this paper the formation of a selective emitter, and the nickel silicide seed layer at the front side metallization of silicon cells is considered. After generating the nickel seed layer the contacts were thickened by Cu LIP (light induced plating) and by the formation of a plated Ni/Cu two step metallization on front contacts. In fabricating a Ni/Cu plating metallization cell with a selective emitter structure it has been shown that the cell efficiency can be increased by at least 0.2%.

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2009년도 추계학술발표대회 논문집
• /
• pp.350-355
• /
• 2009

The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

• 마이크로전자및패키징학회지
• /
• 제27권3호
• /
• pp.29-34
• /
• 2020

본 연구에서는 무전해 니켈 도금액 pH 변화에 따른 electroless nickel immersion gold (ENIG)/Sn-3.0wt.%Ag-0.5wt.%Cu(SAC305) 솔더 접합부 취성 파괴 거동에 대하여 평가하였다. ENIG 표면처리를 위한 무전해 니켈 도금액의 pH는 4.0에서 5.5로 변화 시켰다. 무전해 니켈 도금 후 Ni-P 표면 관찰 결과, 도금액의 pH가 낮아질수록 Ni-P 층 nodule 표면에 핀홀이 증가하였다. 솔더링 후 접합부 계면에서는 (Cu,Ni)6Sn5 금속간화합물이 형성되었으며, 무전해 니켈 도금액의 pH가 증가할수록 솔더접합부의 계면 금속간화합물의 두께는 증가하였다. 고속전단 시험을 통하여 ENIG/SAC305 솔더 접합부의 취성파괴 거동을 확인하였으며, 무전해 니켈 도금액의 pH가 증가할수록 솔더접합부의 전단강도는 감소하는 경향을 보였다. 또한, 솔더 접합부의 취성 파괴율은 pH가 5일 때 가장 높은 값을 보였다.