• Resources Recycling
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• v.10 no.2
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• pp.27-33
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• 2001

Reusing of electroless Ni-Cu-P waste solution was investigated in the plating time, plating rate, solution composion and deposit. Plating time of nickel-catalytic surface took longer than that of zincated-catalytic surface. Initial solution with 50f) waste solution additive at batch type was possible to reusing of waste solution. Plating time of initial solution at continuous type took longer 10 times over than that of batch type. Plating time of 50% waste solution additive at continuous type took longer 3.7 times over than that of batch type. Component change of nickel-copper for electroless deposition was greatly affected by depolited inferiority and larger decreased plating rate.

• Resources Recycling
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• v.12 no.1
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• pp.18-24
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• 2003

Reusing of electroless Ni-Cu-B waste solution was investigated in the plating time, plating rate, solution composition and deposit. Plating time of nickel-catalytic surface took longer than that of zincated-catalytic surface. Initial solution with 40% waste solution additive at batch type was possible to reusing of waste solution. Plating time of initial solution at continuous type took longer 6 times over than that of batch type. Plating time of 40% waste solution additive at continuous type took longer 2 times over than that of batch type. Component change of nickel-copper for electroless deposition was greatly affected by deposited inferiority and larger decreased plating rate.

• Journal of Power System Engineering
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• v.10 no.3
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• pp.58-66
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• 2006

The effect of bath composition, plating condition and plating rate on the magnetic properties of electroless Ni-Cu-P deposits were investigated. With increasing $CuSO_4$ concentration in the bath, plating rate increased, while the Br value of deposits decreased Sharply. Plating rate increased up to 34% with the addition of 200ppm of NaF and 0.8ppm of Thiourea to the bath. Plating reaction had been ceased by the increase of pH above 11.3, bath temperature higher than $90^{\circ}C$ and under $70^{\circ}C$. The Br value of deposit was uniform with various concentration of complexing agent (Sodium citrate, Ethylenediamine) in the bath. The Br value of deposit was almost equal to that found by the addition of stabilizer(Thiourea) and accelerator(NaF). The Br value of deposit was uniform in plating time(120 min) and heat treatment temperature(below $200^{\circ}C$), and were confirmed to have adequate bath stability for practical use.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.328-332
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• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surface. One of the front metal contacts is Ni/Cu plating that it is available to simply and inexpensive production to apply mass production. Ni is shown to be a suitable barrier to Cu diffusion into the silicon. The process of Ni electroless plating on front silicon surface is performed using a chemical bath. Additives and buffer agents such as ammonium chloride is added to maintain the stability and pH control of the bath. Ni deposition rate is found to vary with temperature, time, utilization of bath. The experimental result shown that Ni layer by SEM (scanning electron microscopy) and EDX analysis. Finally, plated Ni/Cu contact solar cell result in an efficiency of 17.69% on $2{\times}2\;cm^2$, Cz wafer.

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.121-126
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• 2000

The effect of electroless Ni and Cu plating on $LaNi_5$, $AB_5$ type hydrogen storage alloy was investigated by the various electrochemical techniques such as constant current charge-discharge test, cyclic voltammeoy, and a.c. impedance spectroscopy. Scanning electron microscopy and X-ray diffraction test were conducted for phenomenological logical analyses. Cyclic Voltammetry results show that activation characteristics, cycle life and reaction ,rate were improved through electroless Ni and Cu plating. Compared with bare $LaNi_5$ the charge transfer resistance of electrode was greatly reduced as charge-discharge cycle increases. Therefore, electroless Ni and Cu plating on $LaNi_5$ alloy tends to accelerate the early activation, increasing the cyclic lift of electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.708-711
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• 1999

The Cu/Ni/Au lamellar structure is extensively used as an under bump metallization on silicon file, and on printed circuit board(PCB) pads. Ni is plated Cu by either electroless Ni plating, or electrolytic Ni plating. Unlike the electrolytic Ni plating, the electroless Ni plating does not deposit pure Ni, but a mixture of Ni and phosphorous, because hypophosphite Is used in the chemical reaction for reducing Ni ions. The fracture crack extended at the interface between solder balls of plastic ball grid (PBGA) package and conducting pads of PCB. The fracture is duets to segregation at the interface between Ni$_3$Sn$_4$intermetallic and Ni-P layer. The XPS diffraction results of Cu/Ni/Au results of CU/Ni/AU finishs showed that the Ni was amorphous with supersaturated P. The XPS and EDXA results of the fracture surface indicated that both of the fracture occurred on the transition lesion where Sn, P and Ni concentrations changed.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.250-253
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• 2007

An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by anneal ing at $380{\sim}400^{\circ}C$ for $15{\sim}30$ min at $N_{2}$ gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at $380{\sim}400^{\circ}C$. The Ni plating solution is composed of a mixture of $NiCl_{2}$ as a main nickel source. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency solar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation. In this paper, we investigated low-cost Ni/Cu contact formation by electroless and electroplating for crystalline silicon solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.575-579
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• 2010

The technologies of Ni/Cu plating contact is attributed to the reduced series resistance caused by a better contact conductivity of Ni with Si and the subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading was combined with the lower resistance of a metal silicide contact and an improved conductivity of the plated deposit. This improves the FF (fill factor) as the series resistance is reduced. This is very much requried in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A Selective emitter structure with highly dopeds regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing In this paper the formation of a selective emitter, and the nickel silicide seed layer at the front side metallization of silicon cells is considered. After generating the nickel seed layer the contacts were thickened by Cu LIP (light induced plating) and by the formation of a plated Ni/Cu two step metallization on front contacts. In fabricating a Ni/Cu plating metallization cell with a selective emitter structure it has been shown that the cell efficiency can be increased by at least 0.2%.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.350-355
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• 2009

The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.29-34
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• 2020

The behavior of brittle fracture of electroless nickel immersion gold (ENIG) /Sn-3.0wt.%Ag-0.5wt.%Cu (SAC305) solder joints was evaluated. The pH of the electroless nickel plating solution for ENIG surface treatment was changed from 4.0 to 5.5. As the pH of the Ni plating solution increased, pin hole in the Ni-P layer increased. The thickness of the interfacial intermetallic compound (IMC) of the solder joint increased with pH of Ni plating solution. The high speed shear strength of the SAC305 solder joint on ENIG surface finish decreased with the pH of the Ni plating solution. In addition, the brittle fracture rate of the solder joint was the highest when the pH of the Ni plating solution was 5.