• Economic and Environmental Geology
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• v.42 no.5
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• pp.413-426
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• 2009

The study was conducted to investigate the effects of indigenous bacteria on geochemical behavior of toxic heavy metals in contaminated paddy soil near an abandoned mine. The effects of sulfate amendment to stimulate microbial sulfate reduction on heavy metal behaviors were also investigated. Batch-type experiments were performed with lactate or glucose as a carbon source to activate indigenous bacteria in the soil under anaerobic condition for 100 days. Sulfate (250 mg/L) was artificially injected at 60 days after the onset of the experiments. In the case of glucose supply, solution pH increased from 4.8 to 7.6 while pH was maintained at 7~8 in the lactate solution. The initial low pH in the case of glucose supply likely resulted in the enhanced extraction of Fe and most heavy metals at the initial experimental period. Lactate supply exerted no significant difference on the amounts of dissolved Zn, Pb, Ni and Cu between microbial and abiotic control slurries; however, lower Zn, Pb and Ni and higher Cu concentrations were observed in the microbial slurries than in the controls when glucose supplied. Sulfate amendment led to dramatic decrease in dissolved Cr and maintenance of dissolved As, both of which had gradually increased over time till the sulfate injection. Black precipitates formed in solution after sulfate amendment, and violarite($Fe^{+2}{Ni^{+3}}_2S_4$) was found with XRD analysis in the microbial precipitates. Conceivably the mineral might be formed after Fe(III) reduction and microbial sulfate reduction with coprecipitation of heavy metal. The results suggested that heavy metals which can be readily extracted from contaminated paddy soils may be stabilized in soil formation by microbial sulfate reduction.

• Korean Journal of Mineralogy and Petrology
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• v.35 no.4
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• pp.469-484
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• 2022

The Janggun Pb-Zn deposit has been known one of the four largest deposits (Yeonhwa, Shinyemi, Uljin) in South Korea. The geology of this deposit consists of Precambrian Weonnam formation, Yulri group, Paleozoic Jangsan formation, Dueumri formation, Janggum limestone formation, Dongsugok formation, Jaesan formation and Mesozoic Dongwhachi formation and Chungyang granite. This Pb-Zn deposit is hydrothermal replacement deposit in Paleozoic Janggum limestone formation. The wallrock alteration that is remarkably recognized with Pb-Zn mineralization at this deposit consists of mainly rhodochrositization and dolomitization with minor of pyritization, sericitization and chloritization. Wallrock alteration is divided into the five zones (Pb-Zn orebody -> rhodochrosite zone -> dolomite zone -> dolomitic limestone zone -> limestone or dolomitic marble) from orebody to wallrock. The white mica from wallrock alteration occurs as fine or medium aggregate associated with Ca-dolomite, Ferroan ankerite, sideroplesite, rutile, apatite, arsenopyrite, pyrite, sphalerite, galena, quartz, chlorite and calcite. The structural formular of white mica from wallrock alteration is (K_0.77-0.62Na_0.03-0.00Ca_0.03-0.00Ba_0.00Sr_0.01)_0.82-0.64(Al_1.72-1.48Mg_0.48-0.20Fe_0.04-0.01Mn_0.03-0.00Ti_0.01-0.00Cr_{0.00As0.01-0.00}Co_0.03-0.00Zn_0.03-0.00Pb_0.05-0.00Ni_0.01-0.00)_2.07-1.92 (Si_3.43-3.33Al_0.67-0.57)_4.00O₁₀(OH_1.94-1.80F_0.20-0.06)_2.00. It indicated that white mica from wallrock alteration has less K, Na and Ca, and more Si than theoretical dioctahedral micas. The white micas from wallrock alteration of Janggun Pb-Zn deposit, Yeonhwa 1 Pb-Zn deposit and Baekjeon Au-Ag deposit, and limestone of Gumoonso area correspond to muscovite and phengite and white mica from wallrock alteration of Dunjeon Au-Ag deposit corresponds to muscovite. Compositional variations in white mica from wallrock alteration of these deposits and limeston of Gumoonso area are caused by mainly phengitic or Tschermark substitution mechanism (Janggun Pb-Zn deposit), mainly phengitic or Tschermark substitution and partly illitic substitution mechanism (Yeonhwa 1 Pb-Zn deposit, Dunjeon Au-Ag deposit and Baekjeon Au-Ag deposit), and mainly phengitic or Tschermark substitution and partly illitic substitution or Na⁺ <-> K⁺ substitution mechanism (Gumoonso area).

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.162-162
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• 1999

초고주파 집적회로의 핵심소자로 각광을 받고 있는 GaAs MESFET(MEtal-emiconductor)은 게이트 형성 공정이 가장 중요하며, WNx 내화금속을 이용한 planar 게이트 구조의 경우 임계전압(Vth:threshold voltage)의 균일도가 우수할 뿐만 아니라 특히 Side-wall을 이용한 self-align 게이트는 소오스 저항을 줄일 수 있어 고성능의 소자 제작을 가능하게 한다.(1) 본 연구의 핵심이 되는 Side-wall을 형성하기 위하여 PECVD법에 의한 SiOx 박막을 증착하고, 건식식각법을 이용하여 SiOx side-wall을 형성하였다. 이 공정을 이용하여 소오스 저항이 낮고 임계전압의 균일도가 우수한 고성능의 self-aligned gate MESFET을 제작하였다. 3inch GaAs 기판상에 이온주입법에 의한 채널 형성, d.c. 스퍼터링법에 의한 WNx 증착, PECVD법에 의한 SiOx 증착, MERIE(Magnetic Enhanced Reactive Ion Etcing)에 의한 Side-wall 형성, LDD(Lightly Doped Drain)와 N+ 이온주입, 그리고 RTA(Rapid Thermal Annealing)를 사용하여 활성화 공정을 수행하였다. 채널은 40keV, 4312/cm2로, LDD는 50keV, 8e12/cm2로 이온주입하였고, 4000A의 SiOx를 증착한 후 2500A의 Side-wall을 형성하였다. 옴익 접촉은 AuGe/Ni/Au 합금을 이용하였고, 소자의 최종 Passivation은 SiNx 박막을 이용하였다. 제작된 소자의 전기적 특성은 hp4145B parameter analyzer를 이용한 전압-전류 측정을 통하여 평가하였다. Side-wall 형성은 0.3$\mu\textrm{m}$ 이상의 패턴크기에서 수직으로 잘 형성되었고, 본 연궁에서는 게이트 길이가 0.5$\mu\textrm{m}$인 MESFET을 제작하였다. d.c. 특성 측정 결과 Vds=2.0V에서 임계전압은 -0.78V, 트랜스컨덕턴스는 354mS/mm, 그리고 포화전류는 171mA/mm로 평가되었다. 특히 본 연구에서 개발된 트랜지스터의 게이트 전압 변화에 따른 균일한 트랜스 컨덕턴스의 특성은 RF 소자로 사용할 때 마이크로 웨이브의 왜곡특성을 없애주기 때문에 균일한 신호의 전달을 가능하게 한다. 0.5$\mu\textrm{m}$$\times$100$\mu\textrm{m}$ 게이트 MESFET을 이용한 S-parameter 측정과 Curve fitting 으로부터 차단주파수 fT는 40GHz 이상으로 평가되었고, 특히 균일한 트랜스컨덕턴스의 경향과 함께 차단주파수 역시 게이트 바이어스, 즉 소오스-드레스인 전류의 변화에 따라 균일한 값을 보였다. 본 연구에서 개발된 Side-wall 공정은 게이트 길이가 0.3$\mu\textrm{m}$까지 작은 경우에도 사용가능하며, WNx self-align gate MEESFET은 낮은 소오스저항, 균일한 임계전압 특성, 그리고 높고 균일한 트랜스 컨덕턴스 특성으로 HHP(Hend-Held Phone) 및 PCS(Personal communication System)와 같은 이동 통신용 단말기의 MMICs(Monolithic Microwave Integrates Circuits)의 제작에 활용될 것으로 기대된다.

• Journal of the Korean Electrochemical Society
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• v.4 no.3
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• pp.125-131
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• 2001

A long-term variation of electrode polarization in the MCFC has been analyzed successfully using a single cell with a Au, $CO_2/O_2$ reference electrode Four different cells with different components were operated and their electrode polarizations were analyzed. As published in the literatures, the cathode polarization was larger than that of the anode. The more stable operation of a single cell with the Al-coated cell frame up to 6,000hrs indicates that the corrosion at the cell frame, particularly wet seal area, plays an important role to determine the lifetime of a MCFC. At the initial stage of the cell operation, the voltage of the cell using a cathode stabilized by the $LiCoO_2$ coating was relatively low due to the high cathode polarization. As the cell was operated and the stabilized cathode was lithiated sufficiently, the cathode polarization decreased and the cell voltage was recovered. It was observed that the voltage of the cell using the $Li_2CO_3/Na_2CO_3$ electrolyte fluctuated with operation time and the cathode polarization fluctuated along with the cell voltage quite similarly. Although the mechanisms of the voltage fluctuation were not clear yet, the results imply that the voltage fluctuation was related with a reaction in the cathode side. After testing every single cell, the cathode polarization increased with the steep decrease in the cell voltage. Thus, the cathode should be improved in order to develop more durable MCFC.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.211-212
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• 2010

GaN 기반의 상부발광형 LED는 동작되는 동안 생기는 전기적 단락, 그리고 칩 위의 p-형 전극과 n-형 전극 사이에 생기는 누설전류 및 신뢰성 확보를 위하여 칩 표면에 passivation 층을 형성하게 된다. SiO2, Si3N4와 같은 passivation layers는 일반적으로 PECVD (Plasma Enhanced Chemical Vapor Deposition)공정을 이용한다, 하지만 이는 공정 특성상 plasma로 인한 damage가 유발되기 때문에 표면 누설 전류가 증가 한다. 이로 인해 forward voltage와 reverse leakage current의 특성이 저하된다. 본 실험에서는 원자층 단위의 박막 증착으로 인해 PECVD보다 단차 피복성이 매우 우수한 PEALD(Plasma Enhanced Atomic Layer Deposition)공정을 이용하여 Al2O3 passivation layer를 증착한 후, 표면 누설전류와 빛의 출력 특성에 대해서 조사해 보았다. PSS (patterned sapphire substrate) 위에 성장된 LED 에피구조를 사용하였고, TCP(Trancformer Copled Plasma)장비를 사용하여 에칭 공정을 진행하였다. 이때 투명전극을 증착하기 위해 e-beam evaporator를 사용하여 Ni/Au를 각각 $50\;{\AA}$씩 증착한 후 오믹 특성을 향상시키기 위하여 $500^{\circ}C$에서 열처리를 해주었다. 그리고 Ti/Au($300/4000{\AA}$) 메탈을 사용하여 p-전극과 n-전극을 형성하였다. Passivation을 하지 않은 경우에는 reverse leakage current가 -5V 에서 $-1.9{\times}10-8$ A 로 측정되었고, SiO2와 Si3N4을 passivation으로 이용한 경우에는 각각 $8.7{\times}10-9$과 $-2.2{\times}10-9$로 측정되었다. Fig. 1 에서 보면 알 수 있듯이 5 nm의 Al2O3 film을 passivation layer로 이용할 경우 passivation을 하지 않은 경우를 제외한 다른 passivation 경우보다 reverse leakage current가 약 2 order ($-3.46{\times}10-11$ A) 정도 낮게 측정되었다. 그 이유는 CVD 공정보다 짧은 ALD의 공정시간과 더 낮은 RF Power로 인해 plasma damage를 덜 입게 되어 나타난 것으로 생각된다. Fig. 2 에서는 Al2O3로 passivation을 한 소자의 forward voltage가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 0.07 V와 0.25 V씩 낮아지는 것을 확인할 수 있었다. 또한 Fig. 3 에서는 Al2O3로 passivation을 한 소자의 output power가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 2.7%와 24.6%씩 증가한 것을 볼 수 있다. Output power가 증가된 원인으로는 향상된 forward voltage 및 reverse에서의 leakage 특성과 공기보다 높은 Al2O3의 굴절률이 광출력 효율을 증가시켰기 때문인 것으로 판단된다.

• Economic and Environmental Geology
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• v.31 no.2
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• pp.111-125
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• 1998

Dispersion, migration and enrichment of environmental toxic elements from the Samkwang Au-Ag mine area were investigated based upon major, minor and rare earth element geochemistry. The Samkwang mine area composed mainly of Precambrian granitic gneiss. The mine had been mined for gold and silver, but closed in 1996. According to the X-ray powder diffraction, mineral composition of stream sediments and soils were partly variable mineralogy, which are composed of quartz, orthoclase, plagioclase, amphibole, muscovite, biotite and chlorite, respectively. Major element variations of the host granitic gneiss, stream sediments and soils of mining and non-mining drainage, indicate that those compositions are decrese $Al_2O_3$, $Fe_2O_3$, MgO, $TiO_2$, $P_2O_5$ and LOI with increasing $SiO_2$ respectively. Average compositional ranges (ppm) of minor and/or environmental toxic elements within those samples are revealed as As=<2-4500, Cd=<1-24, Cu=6-117, Sb=1-29, Pb=17-1377 and Zn=32-938, which are extremely high concentrations of sediments from the mining drainage (As=2006, Cd=l1, Cu=71, Pb=587 and Zn=481 ppm, respectively) than concentrations of the other samples and host granitic gneiss. Major elements (average enrichment index=6.53) in all samples are mostly enriched, excepting $SiO_2$, $Na_2O$ and $K_2O$, normalized by composition of host granitic gneiss. Rare earth element (average enrichment index=2.34) are enriched with the sediments from the mining drainage. Minor and/or environmental toxic elements within all samples on the basis of host rock were strongly enriched of all elements (especially As, Br, Cu, Pb and Zn), excepting Ba, Cr, Rb and Sr. Average enrichment index of trace elements in all samples is 15.55 (sediments of mining drainage=37.33). Potentially toxic elements (As, Cd, Cr, Cu, Ni, Pb, and Zn) of the samples revealed that average enrichment index is 46.10 (sediments of mining drainage=80.20, sediments of nonmining drainage=5.35, sediments of confluent drainage=20.22, subsurface soils of mining drainage=7.97 and subsurface soils of non-mining drainage=4.15). Sediments and soils of highly concentrated toxic elements are contained some pyrite, arsenopyrite, sphalerite, galena and goethite.

• Economic and Environmental Geology
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• v.43 no.5
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• pp.455-466
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• 2010

Seabed mineral resources explored by Korea are categorized into major three types of deposit; manganese nodule, manganese crust and polymetallic sulfides. Pt displays high enrichment factors (400, ore/crust ratios) in manganese nodule. Rare earth oxide content in manganese nodule ranges from 0.037 to 0.302 REO % with mean value of 0.12 REO %. Both of Te and Pt are enriched elements in manganese crust, displaying enrichment factors of 10800 and 150, respectively. Rare earth oxide's contents of manganese crust are slightly higher than manganese nodule's (0.013~0.387 REO %, average = 0.18 REO %). Se and In are outstanding rare metals from seabed polymetallic sulfides, showing enrichment factors of 1300 and 110, respectively. Au (0.8~26.3 g/t) and Ag (0.9~348.0 g/t) are another enriched elements in polymetallic sulfides. The main concern at exploiting seabed mineral resource will be a securing rare metals for high-technology industries and rare metals from subsea mineral deposits will add economic values to commodity candidates such like Co, Ni and Cu.

• Journal of Welding and Joining
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• v.30 no.5
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• pp.64-69
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• 2012

Sn-Bi eutectic alloy has been widely used as one of the key solder materials for step soldering at low temperature. The Sn-58Bi solder paste containing chloride flux was adopted to compare with that using the chloride-free flux. The paste was applied on the electroless nickel-immersion gold (ENIG) surface finish by stencil printing, and the reflow process was then performed at $170^{\circ}C$ for 10 min. After reflow, the solder joints were aged at $125^{\circ}C$ for 100, 200, 300, 500 and 1000 h in an oven. The interfacial microstructures were obtained by using scanning electron microscopy (SEM), and the composition of intermetallic compounds (IMCs) was analyzed using energy dispersive spectrometer (EDS). Two different IMC layers, consisting of $Ni_3Sn_4$ and relatively very thin Sn-Bi-Ni-Au were formed at the solder/surface finish interface, and their thickness increased with increasing aging time. The wettability of solder joints was investigated by wetting balance test. The mechanical property of each aging solder joint was evaluated by the ball shear test in accordance with JEDEC standard (JESD22-B117A). The results show that the highest shear force was measured when the aging time was 100 h, and the fracture mode changed from ductile fracture to brittle fracture with increasing aging time. On the other hand, the chloride flux in the solder paste did not affect the shear force and fracture mode of the solder joints.

• Journal of the Korean Society of Mineral and Energy Resources Engineers
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• v.55 no.6
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• pp.588-595
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• 2018

This study has focused on evaluation of heavy metal contamination in seepage from 23 mine waste dumping sites in Korea. Seepage samples from the sites were taken and analyzed for heavy metals. The maximum levels (mg/L) in the samples were Al 53.98, As 16.19, Cd 1.15 Cu 37.30, Fe 28.64, Mn 39.00, Ni 0.097, Pb 0.750, and Zn 80.18. Among the sites, six mines were selected as continuous monitoring sites. As results of three months' monitoring of the sites, over the water guidelines for As, Cd, Cu, Fe, Mn, Zn and Al in seepage samples were found at two abandoned Au-Ag mines, Cd, Mn, Zn and Al at two Pb-Zn mines, and As, Fe and Mn at two other Fe-W mines. Therefore, those six mines need continuous monitoring on contamination assessment of seepage due to mining activities.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.293.1-293.1
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• 2016

Various materials including conductive, dielectric, and semi-conductive materials, constitute suitable candidates for printed electronics. Metal nanoparticles (e.g. Ag, Cu, Ni, Au) are typically used in conductive ink. However, easily oxidized metals, such as Cu, must be processed at low temperatures and as such, photonic sintering has gained significant attention as a new low-temperature processing method. This method is based on the principle of selective heating of a strongly absorbent film, without light-source-induced damage to the transparent substrate. However, Cu nanoparticles used in inks are susceptible to the growth of a native copper-oxide layer on their surface. Copper-oxide-nanoparticle ink subjected to a reduction mechanism has therefore been introduced in an attempt to achieve long-term stability and reliability. In this work, a flash-light sintering process was used for the reduction of an inkjet-printed Cu(II)O thin film to a Cu film. Using a photographic lighting instrument, the intensity of the light (or intense pulse light) was controlled by the charged power (Ws). The resulting changes in the structure, as well as the optical and electrical properties of the light-irradiated Cu(II)O films, were investigated. A Cu thin film was obtained from Cu(II)O via photo-thermal reduction at 2500 Ws. More importantly, at one shot of 3000 Ws, a low sheet resistance value ($0.2527{\Omega}/sq.$) and a high resistivity (${\sim}5.05-6.32{\times}10^{-8}{\Omega}m$), which was ~3.0-3.8 times that of bulk Cu was achieved for the ~200-250-nm-thick film.